auf Bestellung 599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.42 EUR |
| 10+ | 9.31 EUR |
| 50+ | 7.22 EUR |
| 100+ | 6.90 EUR |
| 500+ | 6.41 EUR |
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Technische Details IXYP50N65C3 IXYS
Description: IGBT PT 650V 130A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 22ns/80ns, Switching Energy: 1.3mJ (on), 370µJ (off), Test Condition: 400V, 36A, 5Ohm, 15V, Gate Charge: 80 nC, Part Status: Active, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 600 W.
Weitere Produktangebote IXYP50N65C3 nach Preis ab 5.28 EUR bis 12.36 EUR
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IXYP50N65C3 | Hersteller : IXYS |
 Description: IGBT PT 650V 130A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 22ns/80ns Switching Energy: 1.3mJ (on), 370µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W |
auf Bestellung 535 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYP50N65C3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB |
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IXYP50N65C3 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXYP50N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYP50N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns |
Produkt ist nicht verfügbar |