| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFH24N80P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH14N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: TO264 On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN44N80Q3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 800V Drain current: 37A Pulsed drain current: 130A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.19Ω Gate charge: 185nC Kind of channel: enhancement Reverse recovery time: 300ns Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class Kind of package: tube |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Gate charge: 37nC Features of semiconductor devices: ultra junction x-class |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP22N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 145ns Power dissipation: 37W Gate charge: 37nC Polarisation: unipolar Technology: HiPerFET™; X2-Class Drain current: 22A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.145Ω |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA100E1200KB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT Case: TO264 Mounting: THT Kind of package: tube Max. off-state voltage: 1.2kV Load current: 100A Max. load current: 160A Type of thyristor: standard Max. forward impulse current: 1.19kA Gate current: 80mA |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1972G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 800V AC Case: DIP6 Max. operating current: 250mA Control current max.: 50mA |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH10N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFP10N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFA10N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 40nC |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 908 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Technology: Polar™ Drain current: 12A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±30V On-state resistance: 0.5Ω Reverse recovery time: 300ns |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA50E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT Type of thyristor: standard Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: TO247AD Mounting: THT Max. forward impulse current: 0.65kA Kind of package: tube |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CLA50E1200TC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: standard Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Max. forward impulse current: 555A Kind of package: tube |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CLA50E1200TC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: standard Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Max. forward impulse current: 555A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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PD2401 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Type of relay: solid state Max. operating current: 1A Switched voltage: max. 500V AC Mounting: THT Case: DIP4 Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Operating temperature: -40...85°C Control current max.: 100mA Relay variant: 1-phase Insulation voltage: 3.75kV |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSS16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V Power dissipation: 105W Case: TO220AC Mounting: THT Max. off-state voltage: 0.1kV Load current: 16A Max. load current: 35A Kind of package: tube Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 230A Max. forward voltage: 0.64V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFK80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.3kW Case: TO264 Mounting: THT Kind of package: tube Gate charge: 0.19µC Drain current: 80A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 77mΩ |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFR80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 540W Case: ISOPLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN80N60P3 | IXYS |
Category: Transistor modules Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Power dissipation: 960W Case: SOT227B On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Reverse recovery time: 250ns Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Technology: HiPerFET™; Polar3™ Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX80N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 80A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CLA80E1200HF | IXYS |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™ Mounting: THT Max. forward impulse current: 765A Gate current: 38mA Max. off-state voltage: 1.2kV Load current: 80A Max. load current: 126A Kind of package: tube Case: PLUS247™ Type of thyristor: standard |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH10N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 380W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP34N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 96mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFQ140N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 830W Case: TO264 On-state resistance: 18mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT140N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Power dissipation: 800W Gate charge: 240nC Polarisation: unipolar Technology: PolarHT™ Drain current: 140A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 18mΩ Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60A3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSS16-0045AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 1.5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Capacitance: 710pF Type of diode: Schottky rectifying Max. forward impulse current: 280A Max. forward voltage: 0.67V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSS16-01AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Capacitance: 334pF Type of diode: Schottky rectifying Max. forward impulse current: 230A Max. forward voltage: 0.79V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DPS30I600HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns Max. off-state voltage: 0.6kV Load current: 30A Kind of package: tube Case: TO247-2 Type of diode: rectifying Reverse recovery time: 120ns Mounting: THT Max. forward impulse current: 0.45kA Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFR24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 0.49Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN24N100 | IXYS |
 Category: Transistor modulesDescription: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Pulsed drain current: 96A Power dissipation: 568W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 390mΩ Gate charge: 250nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Technology: HiPerFET™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTX24N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTX120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W On-state resistance: 30mΩ Reverse recovery time: 300ns Mounting: THT Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: PLUS247™ |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 16A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 72nC Kind of package: tube Turn-on time: 220ns Turn-off time: 940ns Features of semiconductor devices: high voltage |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™ Collector-emitter voltage: 1.7kV Collector current: 10A Power dissipation: 150W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 65nC Kind of package: tube Turn-on time: 43ns Turn-off time: 370ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ50N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA50N20P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTP50N20PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA50N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB15IM30UC-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 15A Semiconductor structure: single diode Case: DPAK; SC63 Max. forward voltage: 0.51V Max. forward impulse current: 0.3kA Kind of package: reel; tape Leakage current: 5mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 32000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DPF240X400NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw Max. forward voltage: 1.06V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.4kV Electrical mounting: screw Load current: 120A x2 Max. load current: 240A Kind of package: tube Semiconductor structure: double independent Case: SOT227B Max. forward impulse current: 1.2kA |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP60N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 134A Power dissipation: 395W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 128nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYA60N65A5 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 395W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: SMD Gate charge: 128nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYA60N65A5-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; TO263 Type of transistor: IGBT Case: TO263 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYH60N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 128nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
CPC1006N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Case: SOP4 On-state resistance: 10Ω Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 10ms Switched voltage: max. 60V AC; max. 60V DC Max. operating current: 75mA Turn-off time: 10ms Control current max.: 50mA Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1018N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 0.8Ω Mounting: SMT Case: SOP4 Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 2ms Kind of output: MOSFET Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXP12N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3 Type of transistor: IGBT Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 38A Collector-emitter voltage: 650V Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W Reverse recovery time: 30ns Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 2.1V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFH24N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH14N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFX34N80 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFR44N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX44N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK34N80 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN44N80Q3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH22N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Reverse recovery time: 145ns
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP22N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP22N65X2M |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 145ns
Power dissipation: 37W
Gate charge: 37nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 145ns
Power dissipation: 37W
Gate charge: 37nC
Polarisation: unipolar
Technology: HiPerFET™; X2-Class
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA100E1200KB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT
Case: TO264
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Type of thyristor: standard
Max. forward impulse current: 1.19kA
Gate current: 80mA
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO264; THT
Case: TO264
Mounting: THT
Kind of package: tube
Max. off-state voltage: 1.2kV
Load current: 100A
Max. load current: 160A
Type of thyristor: standard
Max. forward impulse current: 1.19kA
Gate current: 80mA
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1972G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 800V AC
Case: DIP6
Max. operating current: 250mA
Control current max.: 50mA
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH10N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP10N80P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFA10N80P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SIA |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 908 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SIATR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IXTP12N50P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200HB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 0.65kA
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Max. forward impulse current: 0.65kA
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200TC-TUB |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Max. forward impulse current: 555A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Max. forward impulse current: 555A
Kind of package: tube
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
| CLA50E1200TC-TRL |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Max. forward impulse current: 555A
Kind of package: reel; tape
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: standard
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Max. forward impulse current: 555A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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Stück im Wert von UAH
| PD2401 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Mounting: THT
Case: DIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 100mA
Relay variant: 1-phase
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Mounting: THT
Case: DIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 100mA
Relay variant: 1-phase
Insulation voltage: 3.75kV
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| DSS16-01A |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.64V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Power dissipation: 105W
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Max. load current: 35A
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.64V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| IXFK80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.19µC
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 77mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.3kW
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.19µC
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 77mΩ
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFR80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN80N60P3 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 960W
Case: SOT227B
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 960W
Case: SOT227B
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar3™
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX80N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CLA80E1200HF |
|
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
Type of thyristor: standard
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
Type of thyristor: standard
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFH10N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP34N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTH11P50 |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFQ140N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK140N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT140N20X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK140N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH48N60A3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSS16-0045AS-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 710pF
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.67V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 710pF
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| DSS16-01AS-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 334pF
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.79V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 334pF
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.79V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| DPS30I600HA |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 120ns
Mounting: THT
Max. forward impulse current: 0.45kA
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 120ns
Mounting: THT
Max. forward impulse current: 0.45kA
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFR24N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN24N100 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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| IXTX24N100 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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| IXTX120P20T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
On-state resistance: 30mΩ
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: PLUS247™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
On-state resistance: 30mΩ
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: PLUS247™
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH16N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-on time: 220ns
Turn-off time: 940ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Turn-on time: 220ns
Turn-off time: 940ns
Features of semiconductor devices: high voltage
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH16N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™
Collector-emitter voltage: 1.7kV
Collector current: 10A
Power dissipation: 150W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
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| IXTQ50N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP50N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA50N20P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
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| IXTP50N20PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
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| IXTA50N25T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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| DSB15IM30UC-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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Mindestbestellmenge: 32000 Stücke
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| DPF240X400NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP60N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 134A
Power dissipation: 395W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 134A
Power dissipation: 395W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYA60N65A5 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: SMD
Gate charge: 128nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: SMD
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYA60N65A5-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH60N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| CPC1006N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Case: SOP4
On-state resistance: 10Ω
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1018N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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| IXXP12N65B4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DSEC16-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)