Produkte > IXYS > Alle Produkte des Herstellers IXYS (14962) > Seite 240 nach 250

Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 235 236 237 238 239 240 241 242 243 244 245 250  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTH50P10 IXTH50P10 IXYS IXT_50P10.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.24 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTT50P10 IXTT50P10 IXYS IXT_50P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.77 EUR
8+9.52 EUR
10+8.55 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CMA50P1600FC CMA50P1600FC IXYS CMA50P1600FC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: TO247-3
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDMA50P1600TG IXYS MDMA50P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA50P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDMA50P1200TG IXYS MDMA50P1200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C45HB DSA60C45HB IXYS DSA60C45HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C150PB DSA60C150PB IXYS DSA60C150PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C45PB DSA60C45PB IXYS DSA60C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C60PB DSA60C60PB IXYS DSA60C60PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C100PB DSA60C100PB IXYS DSA60C100PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C60HB DSA60C60HB IXYS DSA60C60HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDA217S FDA217S IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.38 EUR
18+4 EUR
19+3.78 EUR
21+3.45 EUR
23+3.16 EUR
50+3.05 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
71+1.01 EUR
86+0.84 EUR
100+0.77 EUR
300+0.68 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CPC1002NTR CPC1002NTR IXYS CPC1002N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDA217 FDA217 IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
21+3.43 EUR
50+3.07 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting; non-inverting
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXDN602PI IXDN602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: non-inverting
auf Bestellung 1167 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
68+1.06 EUR
74+0.97 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IXDN604PI IXDN604PI IXYS IXDD604PI.pdf IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
49+1.47 EUR
53+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609PI IXDN609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
50+1.43 EUR
55+1.32 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IXDI614PI IXDI614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: inverting
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
35+2.04 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604PI IXDI604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: inverting
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
49+1.47 EUR
53+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDF604PI IXDF604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: inverting; non-inverting
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
39+1.87 EUR
50+1.63 EUR
100+1.52 EUR
250+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604PI IXDD604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
48+1.52 EUR
53+1.37 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IX2127G IX2127G IXYS IX2127.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IXDI602PI IXDI602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
46+1.57 EUR
54+1.34 EUR
61+1.19 EUR
100+1.07 EUR
250+0.93 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.08 EUR
28+2.62 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXXH100N60B3 IXXH100N60B3 IXYS IXXH100N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH100N60C3 IXXH100N60C3 IXYS IXXH100N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
38+1.93 EUR
50+1.82 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018NTR CPC1018NTR IXYS CPC1018N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSS25-0045A DSS25-0045A IXYS DSS25-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS25-0025B DSS25-0025B IXYS DSS25-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 94A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C4H1 IXYS ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN75N120 IXDN75N120 IXYS IXDN75N120.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN85N120C4H1 IXYS IXYN85N120C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK72N60B3H1 IXGK72N60B3H1 IXYS IXGK(X)72N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-16io1 MCD312-16io1 IXYS MCC312-12IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-22N1 MDD312-22N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-14io1 MCD312-14io1 IXYS MCD312-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-18N1 MDD312-18N1 IXYS MDD312-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-16N1 MDD312-16N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-18io1 MCD312-18io1 IXYS MCD312-18IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-12N1 MDD312-12N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-12io1 MCD312-12io1 IXYS MCD312-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-14N1 IXYS MDD312-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-20N1 IXYS MDD312-20N1.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-14io1 IXYS MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-08io1 IXYS MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-16io1 IXYS MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-12io1 IXYS MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH50P10 IXT_50P10.pdf
IXTH50P10
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.24 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTT50P10 IXT_50P10.pdf
IXTT50P10
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
8+9.52 EUR
10+8.55 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
CMA50P1600FC CMA50P1600FC.pdf
CMA50P1600FC
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMA50P1600HB
DMA50P1600HB
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Case: TO247-3
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDMA50P1600TG MDMA50P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCMA50P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDMA50P1200TG MDMA50P1200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.45 EUR
10+7.61 EUR
11+6.72 EUR
30+6.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C45HB DSA60C45HB.pdf
DSA60C45HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.9 EUR
21+3.45 EUR
30+3.16 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C150PB DSA60C150PB.pdf
DSA60C150PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.8V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C45PB DSA60C45PB.pdf
DSA60C45PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.67V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C60PB DSA60C60PB.pdf
DSA60C60PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C100PB DSA60C100PB.pdf
DSA60C100PB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.78V
Load current: 30A x2
Power dissipation: 175W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSA60C60HB DSA60C60HB.pdf
DSA60C60HB
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.75V
Load current: 30A x2
Power dissipation: 160W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDA217S FDA217.pdf
FDA217S
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Type of integrated circuit: driver
Operating temperature: -40...85°C
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
18+4 EUR
19+3.78 EUR
21+3.45 EUR
23+3.16 EUR
50+3.05 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IX4426N IX4426-27-28.pdf
IX4426N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IX4340N IX4340.pdf
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
71+1.01 EUR
86+0.84 EUR
100+0.77 EUR
300+0.68 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
CPC1002NTR CPC1002N.pdf
CPC1002NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Case: SOP4
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Max. operating current: 700mA
Switched voltage: max. 60V DC
Insulation voltage: 1.5kV
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.52 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDA217 FDA217.pdf
FDA217
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
21+3.43 EUR
50+3.07 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXDF602PI IXD_602.pdf
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting; non-inverting
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXDN602PI IXD_602.pdf
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: non-inverting
auf Bestellung 1167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
68+1.06 EUR
74+0.97 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IXDN604PI IXDD604PI.pdf IXD_604.pdf
IXDN604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.47 EUR
53+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
35+2.09 EUR
37+1.97 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IXDN609PI IXDD609CI.pdf
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 105ns
Turn-on time: 115ns
Kind of output: non-inverting
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
50+1.43 EUR
55+1.32 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IXDI614PI IXDD614CI-DTE.pdf
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: inverting
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
35+2.04 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IXDI604PI IXDD604PI.pdf
IXDI604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: inverting
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.47 EUR
53+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDF604PI IXDD604PI.pdf
IXDF604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: inverting; non-inverting
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.87 EUR
50+1.63 EUR
100+1.52 EUR
250+1.36 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IXDD604PI IXDD604PI.pdf
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 79ns
Turn-on time: 81ns
Kind of output: non-inverting
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
48+1.52 EUR
53+1.37 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IX2127G IX2127.pdf
IX2127G
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -500÷250mA; Ch: 1; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -500...250mA
Number of channels: 1
Supply voltage: 9...12V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
IXDI602PI IXD_602.pdf
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 93ns
Turn-on time: 93ns
Kind of output: inverting
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
46+1.57 EUR
54+1.34 EUR
61+1.19 EUR
100+1.07 EUR
250+0.93 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-off time: 130ns
Turn-on time: 140ns
Kind of output: non-inverting
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
28+2.62 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IXXH100N60B3 IXXH100N60B3.pdf
IXXH100N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH100N60C3 IXXH100N60C3.pdf
IXXH100N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 0.22µs
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 95s
Gate charge: 150nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CPC2317N CPC2317N.pdf
CPC2317N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO + SPST-NC
Case: SO8
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 16Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
auf Bestellung 256 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
38+1.93 EUR
50+1.82 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
CPC1018NTR CPC1018N.pdf
CPC1018NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Relay variant: 1-phase; current source
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.86 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSS25-0045A DSS25-0045A.pdf
DSS25-0045A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DSS25-0025B DSS25-0025B.pdf
DSS25-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 94A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 94A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH30N120C4H1 ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 55A; 500W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of transistor: IGBT
Gate charge: 57nC
Power dissipation: 500W
Gate-emitter voltage: ±20V
Collector current: 55A
Pulsed collector current: 166A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXDN75N120 IXDN75N120.pdf
IXDN75N120
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 150A
Gate-emitter voltage: ±20V
Power dissipation: 660W
Pulsed collector current: 190A
Max. off-state voltage: 1.2kV
Technology: NPT
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN85N120C4H1 IXYN85N120C4H1.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 85A
Gate-emitter voltage: ±20V
Power dissipation: 600W
Pulsed collector current: 420A
Max. off-state voltage: 1.2kV
Technology: GenX4™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXGK72N60B3H1 IXGK(X)72N60B3H1.pdf
IXGK72N60B3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-16io1 MCC312-12IO1.pdf
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-22N1 MDD312-12N1-DTE.pdf
MDD312-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-14io1 MCD312-14io1.pdf
MCD312-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-18N1 MDD312-18N1.pdf
MDD312-18N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-16N1 MDD312-12N1-DTE.pdf
MDD312-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-18io1 MCD312-18IO1-DTE.pdf
MCD312-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-12N1 MDD312-12N1-DTE.pdf
MDD312-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-12io1 MCD312-12io1.pdf
MCD312-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-14N1 MDD312-14N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MDD312-20N1 MDD312-20N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 10.8kA
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-14io1 MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-08io1 MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-16io1 MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD132-12io1 MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 25 50 75 100 125 150 175 200 225 235 236 237 238 239 240 241 242 243 244 245 250  [ Nächste Seite >> ]