| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXDN614CI | IXYS |
IXDN614CI MOSFET/IGBT drivers |
auf Bestellung 715 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN614PI | IXYS |
IXDN614PI MOSFET/IGBT drivers |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN614SI | IXYS |
IXDN614SI MOSFET/IGBT drivers |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN614YI | IXYS |
IXDN614YI MOSFET/IGBT drivers |
auf Bestellung 163 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN630CI | IXYS |
IXDN630CI MOSFET/IGBT drivers |
auf Bestellung 392 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN630MCI | IXYS |
IXDN630MCI MOSFET/IGBT drivers |
auf Bestellung 105 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN630MYI | IXYS |
IXDN630MYI MOSFET/IGBT drivers |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN630YI | IXYS |
IXDN630YI MOSFET/IGBT drivers |
auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA10N80P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA110N15T2 | IXYS | IXFA110N15T2 SMD N channel transistors |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: HiPerFET™; Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 101 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA130N10T2 | IXYS |
IXFA130N10T2 SMD N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA16N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 330W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Technology: HiPerFET™; Polar3™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA180N10T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263 On-state resistance: 6mΩ Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 132 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA18N60X | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 127ns Gate charge: 35nC Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA20N50P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 380W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA22N60P3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 500W Case: TO263 On-state resistance: 390mΩ Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 296 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA230N075T2 | IXYS |
IXFA230N075T2 SMD N channel transistors |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA230N075T2-7 | IXYS |
IXFA230N075T2-7 SMD N channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA24N60X | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 400W Case: TO263 On-state resistance: 0.175Ω Mounting: SMD Gate charge: 47nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA26N50P3 | IXYS |
IXFA26N50P3 SMD N channel transistors |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA38N30X3 | IXYS |
IXFA38N30X3 SMD N channel transistors |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA3N120 | IXYS |
IXFA3N120 SMD N channel transistors |
auf Bestellung 319 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA4N85X | IXYS |
IXFA4N85X SMD N channel transistors |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA56N30X3 | IXYS | IXFA56N30X3 SMD N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA60N25X3 | IXYS | IXFA60N25X3 SMD N channel transistors |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA72N20X3 | IXYS | IXFA72N20X3 SMD N channel transistors |
auf Bestellung 82 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA7N100P | IXYS |
IXFA7N100P SMD N channel transistors |
auf Bestellung 132 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA7N80P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.44Ω Mounting: SMD Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA80N25X3 | IXYS |
IXFA80N25X3 SMD N channel transistors |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA8N65X2 | IXYS | IXFA8N65X2 SMD N channel transistors |
auf Bestellung 429 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFA8N85XHV | IXYS |
IXFA8N85XHV SMD N channel transistors |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA90N20X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 390W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 85ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB150N65X2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns Type of transistor: N-MOSFET Power dissipation: 1.56kW Case: PLUS264™ Mounting: THT Gate charge: 355nC Kind of package: tube Reverse recovery time: 260ns On-state resistance: 17mΩ Gate-source voltage: ±30V Drain current: 150A Drain-source voltage: 650V Kind of channel: enhancement Technology: HiPerFET™; X2-Class Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFB170N30P | IXYS |
IXFB170N30P THT N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFB300N10P | IXYS | IXFB300N10P THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB44N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 44A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 305nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB62N80Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns Case: PLUS264™ Mounting: THT Kind of package: tube Gate charge: 0.27µC Reverse recovery time: 300ns On-state resistance: 0.14Ω Drain current: 62A Power dissipation: 1.56kW Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Technology: HiPerFET™; Q3-Class Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB82N60P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 82A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFB82N60Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 82A Power dissipation: 1.56kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Q3-Class Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH100N30X3 | IXYS |
IXFH100N30X3 THT N channel transistors |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH10N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 10A Power dissipation: 380W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 326 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH10N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH110N10P | IXYS |
IXFH110N10P THT N channel transistors |
auf Bestellung 192 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH110N15T2 | IXYS |
IXFH110N15T2 THT N channel transistors |
auf Bestellung 284 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH110N25T | IXYS |
IXFH110N25T THT N channel transistors |
auf Bestellung 256 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH120N15P | IXYS | IXFH120N15P THT N channel transistors |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH120N20P | IXYS |
IXFH120N20P THT N channel transistors |
auf Bestellung 52 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH120N25X3 | IXYS |
IXFH120N25X3 THT N channel transistors |
auf Bestellung 292 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH120N30X3 | IXYS |
IXFH120N30X3 THT N channel transistors |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH12N100P | IXYS |
IXFH12N100P THT N channel transistors |
auf Bestellung 263 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFH130N15X3 | IXYS |
IXFH130N15X3 THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH140N10P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH140N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Technology: HiPerFET™; X3-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH14N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 14A Power dissipation: 400W Case: TO247-3 On-state resistance: 720mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXFH150N25X3 | IXYS |
IXFH150N25X3 THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH15N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 543W Case: TO247-3 On-state resistance: 760mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 248 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH15N100Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Q3-Class Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH160N15T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Case: TO247-3 Mounting: THT Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Type of transistor: N-MOSFET Kind of package: tube Gate charge: 253nC On-state resistance: 9mΩ Drain current: 160A Power dissipation: 880W Drain-source voltage: 150V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 285 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXDN614CI |
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Hersteller: IXYS
IXDN614CI MOSFET/IGBT drivers
IXDN614CI MOSFET/IGBT drivers
auf Bestellung 715 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.22 EUR |
| 16+ | 4.56 EUR |
| 17+ | 4.32 EUR |
| 50+ | 4.19 EUR |
| IXDN614PI |
![]() |
Hersteller: IXYS
IXDN614PI MOSFET/IGBT drivers
IXDN614PI MOSFET/IGBT drivers
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.08 EUR |
| 36+ | 2 EUR |
| 38+ | 1.89 EUR |
| 500+ | 1.82 EUR |
| IXDN614SI |
![]() |
Hersteller: IXYS
IXDN614SI MOSFET/IGBT drivers
IXDN614SI MOSFET/IGBT drivers
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 25+ | 3.4 EUR |
| IXDN614YI |
![]() |
Hersteller: IXYS
IXDN614YI MOSFET/IGBT drivers
IXDN614YI MOSFET/IGBT drivers
auf Bestellung 163 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.21 EUR |
| 15+ | 4.79 EUR |
| 16+ | 4.53 EUR |
| IXDN630CI |
![]() |
Hersteller: IXYS
IXDN630CI MOSFET/IGBT drivers
IXDN630CI MOSFET/IGBT drivers
auf Bestellung 392 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.97 EUR |
| 9+ | 8.48 EUR |
| 10+ | 8.35 EUR |
| IXDN630MCI |
![]() |
Hersteller: IXYS
IXDN630MCI MOSFET/IGBT drivers
IXDN630MCI MOSFET/IGBT drivers
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.5 EUR |
| 9+ | 8.14 EUR |
| 25+ | 8.01 EUR |
| IXDN630MYI |
![]() |
Hersteller: IXYS
IXDN630MYI MOSFET/IGBT drivers
IXDN630MYI MOSFET/IGBT drivers
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.5 EUR |
| 8+ | 8.97 EUR |
| 9+ | 8.48 EUR |
| 25+ | 8.15 EUR |
| IXDN630YI |
![]() |
Hersteller: IXYS
IXDN630YI MOSFET/IGBT drivers
IXDN630YI MOSFET/IGBT drivers
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.5 EUR |
| 9+ | 8.14 EUR |
| 25+ | 8.01 EUR |
| IXFA10N80P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.15 EUR |
| 16+ | 4.58 EUR |
| 21+ | 3.55 EUR |
| 50+ | 3.3 EUR |
| IXFA110N15T2 |
Hersteller: IXYS
IXFA110N15T2 SMD N channel transistors
IXFA110N15T2 SMD N channel transistors
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.47 EUR |
| 15+ | 4.9 EUR |
| 16+ | 4.65 EUR |
| IXFA12N50P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.35 EUR |
| 50+ | 3.05 EUR |
| IXFA130N10T2 |
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Hersteller: IXYS
IXFA130N10T2 SMD N channel transistors
IXFA130N10T2 SMD N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.22 EUR |
| 17+ | 4.36 EUR |
| 18+ | 4.12 EUR |
| 500+ | 4.05 EUR |
| IXFA16N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.45 EUR |
| 24+ | 3.1 EUR |
| 27+ | 2.73 EUR |
| 50+ | 2.46 EUR |
| IXFA16N60P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.9 EUR |
| IXFA180N10T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 7.08 EUR |
| 14+ | 5.31 EUR |
| IXFA18N60X |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.16 EUR |
| IXFA20N50P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 380W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 10+ | 7.15 EUR |
| IXFA22N60P3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.29 EUR |
| 16+ | 4.76 EUR |
| 18+ | 4.2 EUR |
| 50+ | 3.89 EUR |
| IXFA230N075T2 |
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Hersteller: IXYS
IXFA230N075T2 SMD N channel transistors
IXFA230N075T2 SMD N channel transistors
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 6+ | 11.91 EUR |
| 15+ | 4.76 EUR |
| 50+ | 3.35 EUR |
| IXFA230N075T2-7 |
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Hersteller: IXYS
IXFA230N075T2-7 SMD N channel transistors
IXFA230N075T2-7 SMD N channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.41 EUR |
| 13+ | 5.51 EUR |
| 500+ | 4.63 EUR |
| IXFA24N60X |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.54 EUR |
| 13+ | 5.88 EUR |
| 14+ | 5.19 EUR |
| 50+ | 4.66 EUR |
| IXFA26N50P3 |
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Hersteller: IXYS
IXFA26N50P3 SMD N channel transistors
IXFA26N50P3 SMD N channel transistors
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.46 EUR |
| 31+ | 2.32 EUR |
| 33+ | 2.23 EUR |
| IXFA38N30X3 |
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Hersteller: IXYS
IXFA38N30X3 SMD N channel transistors
IXFA38N30X3 SMD N channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.82 EUR |
| 15+ | 4.99 EUR |
| 16+ | 4.72 EUR |
| 50+ | 4.7 EUR |
| IXFA3N120 |
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Hersteller: IXYS
IXFA3N120 SMD N channel transistors
IXFA3N120 SMD N channel transistors
auf Bestellung 319 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.23 EUR |
| 9+ | 8.14 EUR |
| 50+ | 8.02 EUR |
| IXFA4N85X |
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Hersteller: IXYS
IXFA4N85X SMD N channel transistors
IXFA4N85X SMD N channel transistors
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.16 EUR |
| 37+ | 1.94 EUR |
| 39+ | 1.84 EUR |
| IXFA56N30X3 |
Hersteller: IXYS
IXFA56N30X3 SMD N channel transistors
IXFA56N30X3 SMD N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 7+ | 10.21 EUR |
| 50+ | 7.22 EUR |
| IXFA60N25X3 |
Hersteller: IXYS
IXFA60N25X3 SMD N channel transistors
IXFA60N25X3 SMD N channel transistors
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.3 EUR |
| 11+ | 6.75 EUR |
| 12+ | 6.39 EUR |
| IXFA72N20X3 |
Hersteller: IXYS
IXFA72N20X3 SMD N channel transistors
IXFA72N20X3 SMD N channel transistors
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.07 EUR |
| 11+ | 6.52 EUR |
| 12+ | 6.16 EUR |
| 500+ | 5.92 EUR |
| IXFA7N100P |
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Hersteller: IXYS
IXFA7N100P SMD N channel transistors
IXFA7N100P SMD N channel transistors
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.79 EUR |
| 14+ | 5.12 EUR |
| 15+ | 4.83 EUR |
| 50+ | 4.66 EUR |
| IXFA7N80P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| 50+ | 2.86 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.56 EUR |
| IXFA80N25X3 |
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Hersteller: IXYS
IXFA80N25X3 SMD N channel transistors
IXFA80N25X3 SMD N channel transistors
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.11 EUR |
| 10+ | 7.38 EUR |
| 50+ | 7.19 EUR |
| IXFA8N65X2 |
Hersteller: IXYS
IXFA8N65X2 SMD N channel transistors
IXFA8N65X2 SMD N channel transistors
auf Bestellung 429 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 79+ | 0.92 EUR |
| 81+ | 0.89 EUR |
| IXFA8N85XHV |
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Hersteller: IXYS
IXFA8N85XHV SMD N channel transistors
IXFA8N85XHV SMD N channel transistors
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.55 EUR |
| 12+ | 6.11 EUR |
| IXFA90N20X3 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.55 EUR |
| 11+ | 7.14 EUR |
| IXFB150N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Drain-source voltage: 650V
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Drain-source voltage: 650V
Kind of channel: enhancement
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 31.55 EUR |
| IXFB170N30P |
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Hersteller: IXYS
IXFB170N30P THT N channel transistors
IXFB170N30P THT N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 25+ | 20.42 EUR |
| IXFB300N10P |
Hersteller: IXYS
IXFB300N10P THT N channel transistors
IXFB300N10P THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 25+ | 29.19 EUR |
| IXFB44N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 44A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 32.26 EUR |
| 10+ | 28.23 EUR |
| 25+ | 27.1 EUR |
| IXFB62N80Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 5+ | 46.93 EUR |
| 25+ | 42.16 EUR |
| IXFB82N60P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 31.59 EUR |
| 5+ | 28.31 EUR |
| 25+ | 27.9 EUR |
| IXFB82N60Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.76 EUR |
| IXFH100N30X3 |
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Hersteller: IXYS
IXFH100N30X3 THT N channel transistors
IXFH100N30X3 THT N channel transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 17.19 EUR |
| 6+ | 12.74 EUR |
| IXFH10N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 326 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.28 EUR |
| 10+ | 7.24 EUR |
| 12+ | 6.38 EUR |
| IXFH10N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.65 EUR |
| 16+ | 4.63 EUR |
| 30+ | 4.26 EUR |
| IXFH110N10P |
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Hersteller: IXYS
IXFH110N10P THT N channel transistors
IXFH110N10P THT N channel transistors
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.28 EUR |
| 12+ | 6.18 EUR |
| 13+ | 5.83 EUR |
| IXFH110N15T2 |
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Hersteller: IXYS
IXFH110N15T2 THT N channel transistors
IXFH110N15T2 THT N channel transistors
auf Bestellung 284 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.58 EUR |
| 10+ | 7.35 EUR |
| 11+ | 6.95 EUR |
| 30+ | 6.94 EUR |
| IXFH110N25T |
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Hersteller: IXYS
IXFH110N25T THT N channel transistors
IXFH110N25T THT N channel transistors
auf Bestellung 256 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.21 EUR |
| 9+ | 8.11 EUR |
| 120+ | 8.02 EUR |
| IXFH120N15P |
Hersteller: IXYS
IXFH120N15P THT N channel transistors
IXFH120N15P THT N channel transistors
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.57 EUR |
| 9+ | 8.18 EUR |
| 10+ | 7.74 EUR |
| 20+ | 7.64 EUR |
| IXFH120N20P |
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Hersteller: IXYS
IXFH120N20P THT N channel transistors
IXFH120N20P THT N channel transistors
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.12 EUR |
| 7+ | 10.83 EUR |
| IXFH120N25X3 |
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Hersteller: IXYS
IXFH120N25X3 THT N channel transistors
IXFH120N25X3 THT N channel transistors
auf Bestellung 292 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.36 EUR |
| 6+ | 12.26 EUR |
| IXFH120N30X3 |
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Hersteller: IXYS
IXFH120N30X3 THT N channel transistors
IXFH120N30X3 THT N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 20.91 EUR |
| 5+ | 14.7 EUR |
| IXFH12N100P |
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Hersteller: IXYS
IXFH12N100P THT N channel transistors
IXFH12N100P THT N channel transistors
auf Bestellung 263 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.93 EUR |
| 9+ | 8.28 EUR |
| 10+ | 7.84 EUR |
| IXFH130N15X3 |
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Hersteller: IXYS
IXFH130N15X3 THT N channel transistors
IXFH130N15X3 THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 5+ | 14.3 EUR |
| 30+ | 9.21 EUR |
| IXFH140N10P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.3 EUR |
| 9+ | 8.37 EUR |
| 10+ | 7.39 EUR |
| 30+ | 6.65 EUR |
| IXFH140N20X3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.17 EUR |
| 10+ | 11.17 EUR |
| IXFH14N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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| IXFH150N25X3 |
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Hersteller: IXYS
IXFH150N25X3 THT N channel transistors
IXFH150N25X3 THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 2+ | 35.75 EUR |
| 4+ | 17.88 EUR |
| 30+ | 13.04 EUR |
| IXFH15N100P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 248 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.48 EUR |
| 10+ | 11.04 EUR |
| 30+ | 9.91 EUR |
| IXFH15N100Q3 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 19.02 EUR |
| 5+ | 16.03 EUR |
| 10+ | 15.72 EUR |
| IXFH160N15T2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.22 EUR |
| 30+ | 7.49 EUR |




