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IXYT40N120A4HV-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A IXYS DSEI60-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 343 Stücke:
Lieferzeit 14-21 Tag (e)
8+11.6 EUR
9+10.08 EUR
10+9.15 EUR
30+8.43 EUR
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IXFK48N50 IXFK48N50 IXYS IXFK48N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH32N65X IXTH32N65X IXYS IXTH(P,Q)32N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
9+10.06 EUR
10+9.06 EUR
11+8 EUR
30+7.18 EUR
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IXTY2N65X2 IXTY2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Produkt ist nicht verfügbar
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IX4340N IX4340N IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.94 EUR
71+1.2 EUR
86+1 EUR
100+0.92 EUR
300+0.8 EUR
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CPC1002NTR CPC1002NTR IXYS CPC1002N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 700mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXFK102N30P IXFK102N30P IXYS IXFK102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
4+22.04 EUR
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FDA217 FDA217 IXYS FDA217.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.38 EUR
21+4.08 EUR
50+3.63 EUR
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IXDF602PI IXDF602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 2015 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.83 EUR
64+1.34 EUR
69+1.24 EUR
72+1.19 EUR
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IXDN602PI IXDN602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 1105 Stücke:
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49+1.77 EUR
65+1.31 EUR
72+1.19 EUR
74+1.15 EUR
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IXDN604PI IXDN604PI IXYS IXDD604PI.pdf IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.62 EUR
45+1.93 EUR
53+1.62 EUR
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IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.72 EUR
31+2.8 EUR
33+2.58 EUR
50+2.46 EUR
100+2.38 EUR
500+2.34 EUR
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IXDN609PI IXDN609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.38 EUR
49+1.77 EUR
54+1.58 EUR
100+1.57 EUR
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IXDI614PI IXDI614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.47 EUR
31+2.76 EUR
34+2.52 EUR
50+2.42 EUR
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IXDI604PI IXDI604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.46 EUR
47+1.82 EUR
53+1.63 EUR
100+1.62 EUR
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IXDF604PI IXDF604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 329 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.42 EUR
39+2.23 EUR
50+1.94 EUR
100+1.81 EUR
250+1.62 EUR
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IXDD604PI IXDD604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.46 EUR
48+1.81 EUR
53+1.63 EUR
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IXDI602PI IXDI602PI IXYS IXD_602.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.98 EUR
46+1.87 EUR
54+1.59 EUR
61+1.42 EUR
100+1.27 EUR
250+1.11 EUR
Mindestbestellmenge: 29 Stücke
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IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.74 EUR
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SO8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.71 EUR
21+4.22 EUR
50+3.95 EUR
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CPC1018NTR CPC1018NTR IXYS CPC1018N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC; max. 600V AC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXFL44N100P IXFL44N100P IXYS IXFL44N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
5+18.8 EUR
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DSS25-0045A DSS25-0045A IXYS DSS25-0045A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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DSS25-0025B DSS25-0025B IXYS DSS25-0025B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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MCD312-16io1 MCD312-16io1 IXYS MCC312-12IO1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312-22N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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MCD312-14io1 MCD312-14io1 IXYS MCD312-14io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-18N1 MDD312-18N1 IXYS MDD312-18N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD312-16N1 MDD312-16N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD312-18io1 MCD312-18io1 IXYS MCD312-18IO1-DTE.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-12N1 MDD312-12N1 IXYS MDD312-12N1-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD312-12io1 MCD312-12io1 IXYS MCD312-12io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-14N1 IXYS MDD312-14N1.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD312-20N1 IXYS MDD312-20N1.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD132-14io1 IXYS MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-08io1 IXYS MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-16io1 IXYS MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-12io1 IXYS MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-18io1 IXYS MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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IXTX210P10T IXTX210P10T IXYS IXTX210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
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IXTR210P10T IXTR210P10T IXYS IXTR210P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
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IXTN210P10T IXTN210P10T IXYS IXTN210P10T.pdf Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IX9907N IX9907N IXYS IX9907.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
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IX9908N IX9908N IXYS IX9908.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
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109+0.79 EUR
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IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
Produkt ist nicht verfügbar
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IXFH12N90P IXFH12N90P IXYS IXFH(V)12N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Power dissipation: 380W
Gate charge: 56nC
Produkt ist nicht verfügbar
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IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
Produkt ist nicht verfügbar
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IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
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CPC1025N CPC1025N IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1025NTR CPC1025NTR IXYS CPC1025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IX4340UE IX4340UE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
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38+2.28 EUR
75+1.13 EUR
87+0.99 EUR
100+0.86 EUR
240+0.84 EUR
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IX4340NE IX4340NE IXYS IX4340.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 871 Stücke:
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106+0.81 EUR
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IX4340NETR IXYS IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IX4340NTR IX4340NTR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IX4340UETR IX4340UETR IXYS littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IXTQ50N25T IXTQ50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXKN75N60C IXKN75N60C IXYS IXKN75N60C-DTE.pdf Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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IXYT40N120A4HV-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 600W; TO268HV
Type of transistor: IGBT
Power dissipation: 600W
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector current: 140A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEI60-12A DSEI60-12A.pdf
DSEI60-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; Ifsm: 500A; TO247-2; tube; 189W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 52A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 189W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 343 Stücke:
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8+11.6 EUR
9+10.08 EUR
10+9.15 EUR
30+8.43 EUR
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IXFK48N50 IXFK48N50.pdf
IXFK48N50
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 48A; 521W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 48A
Power dissipation: 521W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTH32N65X IXTH(P,Q)32N65X.pdf
IXTH32N65X
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 147 Stücke:
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9+10.06 EUR
10+9.06 EUR
11+8 EUR
30+7.18 EUR
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IXTY2N65X2 IXTP(Y)2N65X2.pdf
IXTY2N65X2
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
Produkt ist nicht verfügbar
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IX4340N IX4340.pdf
IX4340N
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 801 Stücke:
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AnzahlPrivatkunde
44+1.94 EUR
71+1.2 EUR
86+1 EUR
100+0.92 EUR
300+0.8 EUR
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CPC1002NTR CPC1002N.pdf
CPC1002NTR
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 700mA
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXFK102N30P IXFK102N30P.pdf
IXFK102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 33mΩ
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Case: TO264
Kind of channel: enhancement
Mounting: THT
auf Bestellung 5 Stücke:
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4+22.04 EUR
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FDA217 FDA217.pdf
FDA217
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
auf Bestellung 55 Stücke:
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IXDF602PI IXD_602.pdf
IXDF602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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47+1.83 EUR
64+1.34 EUR
69+1.24 EUR
72+1.19 EUR
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IXDN602PI IXD_602.pdf
IXDN602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
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49+1.77 EUR
65+1.31 EUR
72+1.19 EUR
74+1.15 EUR
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IXDN604PI IXDD604PI.pdf IXD_604.pdf
IXDN604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 1035 Stücke:
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33+2.62 EUR
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53+1.62 EUR
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IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 931 Stücke:
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23+3.72 EUR
31+2.8 EUR
33+2.58 EUR
50+2.46 EUR
100+2.38 EUR
500+2.34 EUR
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IXDN609PI IXDD609CI.pdf
IXDN609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 480 Stücke:
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36+2.38 EUR
49+1.77 EUR
54+1.58 EUR
100+1.57 EUR
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IXDI614PI IXDD614CI-DTE.pdf
IXDI614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 480 Stücke:
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31+2.76 EUR
34+2.52 EUR
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IXDI604PI IXDD604PI.pdf
IXDI604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 879 Stücke:
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35+2.46 EUR
47+1.82 EUR
53+1.63 EUR
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IXDF604PI IXDD604PI.pdf
IXDF604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 329 Stücke:
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36+2.42 EUR
39+2.23 EUR
50+1.94 EUR
100+1.81 EUR
250+1.62 EUR
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IXDD604PI IXDD604PI.pdf
IXDD604PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
auf Bestellung 127 Stücke:
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35+2.46 EUR
48+1.81 EUR
53+1.63 EUR
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IXDI602PI IXD_602.pdf
IXDI602PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+2.98 EUR
46+1.87 EUR
54+1.59 EUR
61+1.42 EUR
100+1.27 EUR
250+1.11 EUR
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IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
18+4.74 EUR
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IXKC19N60C5
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 430ns
Gate charge: 70nC
Produkt ist nicht verfügbar
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CPC2317N CPC2317N.pdf
CPC2317N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Manufacturer series: OptoMOS
Type of relay: solid state
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SO8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
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19+4.71 EUR
21+4.22 EUR
50+3.95 EUR
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CPC1018NTR CPC1018N.pdf
CPC1018NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC; max. 600V AC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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IXFL44N100P IXFL44N100P.pdf
IXFL44N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+18.8 EUR
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DSS25-0045A DSS25-0045A.pdf
DSS25-0045A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Produkt ist nicht verfügbar
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DSS25-0025B DSS25-0025B.pdf
DSS25-0025B
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
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MCD312-16io1 MCC312-12IO1.pdf
MCD312-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312-12N1-DTE.pdf
MDD312-22N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD312-14io1 MCD312-14io1.pdf
MCD312-14io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-18N1 MDD312-18N1.pdf
MDD312-18N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD312-16N1 MDD312-12N1-DTE.pdf
MDD312-16N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD312-18io1 MCD312-18IO1-DTE.pdf
MCD312-18io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-12N1 MDD312-12N1-DTE.pdf
MDD312-12N1
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCD312-12io1 MCD312-12io1.pdf
MCD312-12io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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MDD312-14N1 MDD312-14N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MDD312-20N1 MDD312-20N1.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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MCD132-14io1 MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-08io1 MCD132-08io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-16io1 MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-12io1 MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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MCD132-18io1 MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
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IXTX210P10T IXTX210P10T.pdf
IXTX210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+38.02 EUR
10+34.46 EUR
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IXTR210P10T IXTR210P10T.pdf
IXTR210P10T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+46.73 EUR
3+41.33 EUR
10+37.15 EUR
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IXTN210P10T IXTN210P10T.pdf
IXTN210P10T
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
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IX9907N IX9907.pdf
IX9907N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
129+0.67 EUR
Mindestbestellmenge: 129 Stücke
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IX9908N IX9908.pdf
IX9908N
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
97+0.88 EUR
109+0.79 EUR
122+0.7 EUR
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IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
Produkt ist nicht verfügbar
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IXFH12N90P IXFH(V)12N90P_S.pdf
IXFH12N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Power dissipation: 380W
Gate charge: 56nC
Produkt ist nicht verfügbar
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IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
Produkt ist nicht verfügbar
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IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
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CPC1025N CPC1025N.pdf
CPC1025N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
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CPC1025NTR CPC1025N.pdf
CPC1025NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IX4340UE IX4340.pdf
IX4340UE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
38+2.28 EUR
75+1.13 EUR
87+0.99 EUR
100+0.86 EUR
240+0.84 EUR
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IX4340NE IX4340.pdf
IX4340NE
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.65 EUR
75+1.14 EUR
86+0.99 EUR
106+0.81 EUR
300+0.8 EUR
Mindestbestellmenge: 52 Stücke
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IX4340NETR IX4340NE?assetguid=B6D399FA-9C99-4C15-B6C0-B87CEC93F28F
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
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IX4340NTR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IX4340UETR littelfuse-integrated-circuits-ix4340-datasheet?assetguid=628db25e-f5aa-46f2-a8e9-89ea7f36cc00
IX4340UETR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IXTQ50N25T IXTA(H,P,Q)50N25T.pdf
IXTQ50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXKN75N60C IXKN75N60C-DTE.pdf
IXKN75N60C
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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