| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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CPC2317N | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Max. operating current: 120mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Turn-on time: 3ms Turn-off time: 3ms Control current max.: 50mA Kind of output: MOSFET |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1018NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 60V DC; max. 600V AC Case: SOP4 Max. operating current: 0.6A Turn-off time: 2ms Control current max.: 50mA On-state resistance: 0.8Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFL44N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™ Mounting: THT Power dissipation: 357W Gate charge: 305nC Polarisation: unipolar Drain current: 22A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: ISOPLUS264™ On-state resistance: 0.24Ω |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSS25-0045A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 0.4kA Kind of package: tube Power dissipation: 135W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSS25-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 25V Load current: 25A Semiconductor structure: single diode Max. forward voltage: 0.44V Max. forward impulse current: 330A Kind of package: tube Power dissipation: 90W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCD312-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y1-CU Max. forward voltage: 1.06V Max. forward impulse current: 9.6kA Electrical mounting: screw Max. load current: 520A Mechanical mounting: screw Kind of package: bulk Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Gate current: 150/220mA |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MDD312-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MDD312-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MDD312-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MDD312-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.18kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.6kA Gate current: 150/220mA Max. forward voltage: 1.06V Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Electrical mounting: screw Load current: 320A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series Threshold on-voltage: 0.8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MDD312-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MDD312-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Max. forward impulse current: 10.8kA Max. forward voltage: 1.03V Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Load current: 310A Max. load current: 520A Kind of package: bulk Semiconductor structure: double series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD132-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.4kV Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD132-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 0.8kV Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD132-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.6kV Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD132-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.2kV Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MCD132-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk Case: Y4-M6 Kind of package: bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Gate current: 150/200mA Threshold on-voltage: 0.8V Max. forward voltage: 1.08V Load current: 130A Max. load current: 300A Max. off-state voltage: 1.8kV Max. forward impulse current: 4.75kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IXTX210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Case: PLUS247™ Mounting: THT Power dissipation: 1.04kW Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTR210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Power dissipation: 390W Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -195A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube On-state resistance: 8mΩ Reverse recovery time: 200ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTN210P10T | IXYS |
Category: Transistor modules Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A Case: SOT227B Semiconductor structure: single transistor Pulsed drain current: -800A Type of semiconductor module: MOSFET transistor Power dissipation: 830W Gate charge: 740nC Polarisation: unipolar Technology: TrenchP™ Drain current: -210A Kind of channel: enhancement Drain-source voltage: -100V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±15V On-state resistance: 7.5mΩ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IX9907N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Operating voltage: 650V DC Mounting: SMD Output current: 1.7A |
auf Bestellung 486 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IX9908N | IXYS |
Category: LED drivers Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Kind of package: tube Case: SO8 Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Operating voltage: 650V DC Mounting: SMD Output current: 1.7A |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFB52N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 52A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: PLUS264™ On-state resistance: 0.16Ω Reverse recovery time: 300ns Mounting: THT Power dissipation: 1.25kW Gate charge: 308nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFH12N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 12A Power dissipation: 380W Case: TO247-3 On-state resistance: 1Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 0.3Ω Mounting: THT Power dissipation: 960W Gate charge: 215nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN52N90P | IXYS |
Category: Transistor modules Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Polarisation: unipolar Technology: HiPerFET™; Polar™ Drain current: 43A Kind of channel: enhancement Drain-source voltage: 900V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 0.16Ω Reverse recovery time: 300ns Pulsed drain current: 104A Type of semiconductor module: MOSFET transistor Power dissipation: 890W Gate charge: 308nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFX32N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Polarisation: unipolar Drain current: 32A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Kind of package: tube Case: PLUS247™ On-state resistance: 0.3Ω Mounting: THT Power dissipation: 960W Gate charge: 215nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1025N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 400V AC; max. 400V DC Case: SOP4 Max. operating current: 120mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1025NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 1.5kV Turn-on time: 2ms Switched voltage: max. 400V AC; max. 400V DC Case: SOP4 Max. operating current: 120mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Mounting: SMT Manufacturer series: OptoMOS Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 4.09x3.81x2.03mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IX4340UE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Case: MSOP8 Mounting: SMD Kind of package: tube Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 2 Supply voltage: 5...20V |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IX4340NE | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 5...20V Kind of output: non-inverting |
auf Bestellung 871 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IX4340NETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8-EP Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...20V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IX4340NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...5A Number of channels: 2 Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 5...20V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IX4340UETR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: MSOP8 Output current: -5...5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 5...20V Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTQ50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXKN75N60C | IXYS |
Category: Transistor modules Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 250A Power dissipation: 560W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 36mΩ Gate charge: 500nC Kind of channel: enhancement Reverse recovery time: 580ns Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH75N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Collector current: 75A Mounting: THT Collector-emitter voltage: 600V Power dissipation: 750W Gate charge: 107nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 300A Turn-on time: 105ns Kind of package: tube Case: TO247-3 Turn-off time: 185ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXXH75N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 105ns Turn-off time: 165ns Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGN72N60C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Electrical mounting: screw Semiconductor structure: single transistor Type of semiconductor module: IGBT Mechanical mounting: screw Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH72N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGX72N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LIA135S | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LIA135STR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC5712U | IXYS |
Category: Drivers - integrated circuits Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V Type of integrated circuit: driver Case: SOP16 Output current: -500...500µA Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...5.5V |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEP60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 330W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward impulse current: 0.5kA Case: TO247-2 Kind of package: tube Max. forward voltage: 1.81V Reverse recovery time: 40ns Technology: HiPerFRED™ Power dissipation: 330W Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSEP60-12AR | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; ISOPLUS247™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward impulse current: 0.5kA Case: ISOPLUS247™ Kind of package: tube Max. forward voltage: 2.66V Reverse recovery time: 40ns Technology: HiPerFRED™ Power dissipation: 230W Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DSEP60-12AZ-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape Type of diode: rectifying Mounting: SMD Case: D3PAK; TO268AA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DSEP60-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 60A; 80ns; D3PAK,TO268AA; Ifsm: 500A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward impulse current: 0.5kA Case: D3PAK; TO268AA Kind of package: tube Max. forward voltage: 2.66V Reverse recovery time: 80ns Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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DSA70C150HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 35Ax2; TO247-3; Ufmax: 0.77V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 35A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 0.77V Max. forward impulse current: 0.6kA Power dissipation: 215W Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTP26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB Mounting: THT Drain current: -26A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 0.17Ω Reverse recovery time: 240ns Power dissipation: 300W Gate charge: 56nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3 Mounting: THT Drain current: -48A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 85mΩ Reverse recovery time: 260ns Power dissipation: 462W Gate charge: 103nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Drain current: -26A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P On-state resistance: 0.17Ω Reverse recovery time: 240ns Power dissipation: 300W Gate charge: 56nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA26P20P | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263 Mounting: SMD Drain current: -26A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO263 On-state resistance: 0.17Ω Reverse recovery time: 240ns Power dissipation: 300W Gate charge: 56nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTR48P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns Mounting: THT Drain current: -30A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: ISOPLUS247™ On-state resistance: 93mΩ Reverse recovery time: 260ns Power dissipation: 190W Gate charge: 103nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTH26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3 Mounting: THT Drain current: -26A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247-3 On-state resistance: 0.17Ω Reverse recovery time: 240ns Power dissipation: 300W Gate charge: 56nC Polarisation: unipolar Technology: PolarP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA26P20P-TRL | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263 Mounting: SMD Drain current: 26A Kind of channel: enhancement Type of transistor: P-MOSFET Gate-source voltage: 20V Case: D2PAK; TO263 On-state resistance: 0.17Ω Power dissipation: 300W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXTN90P20P | IXYS |
Category: Transistor modules Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A Drain current: -90A Kind of channel: enhancement Drain-source voltage: -200V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 44mΩ Reverse recovery time: 315ns Pulsed drain current: -270A Type of semiconductor module: MOSFET transistor Power dissipation: 890W Gate charge: 205nC Polarisation: unipolar Technology: PolarP™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CPC2317N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Control current max.: 50mA
Kind of output: MOSFET
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1018NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC; max. 600V AC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V DC; max. 600V AC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFL44N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Mounting: THT
Power dissipation: 357W
Gate charge: 305nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Mounting: THT
Power dissipation: 357W
Gate charge: 305nC
Polarisation: unipolar
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS264™
On-state resistance: 0.24Ω
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| DSS25-0045A |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 25A; TO220AC; Ufmax: 0.59V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 135W
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSS25-0025B |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD312-16io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Mechanical mounting: screw
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.06V
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Max. load current: 520A
Mechanical mounting: screw
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Gate current: 150/220mA
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| MDD312-22N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| MCD312-14io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MDD312-18N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MDD312-16N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD312-18io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDD312-12N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD312-12io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.6kA
Gate current: 150/220mA
Max. forward voltage: 1.06V
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Load current: 320A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDD312-14N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDD312-20N1 |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward impulse current: 10.8kA
Max. forward voltage: 1.03V
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Load current: 310A
Max. load current: 520A
Kind of package: bulk
Semiconductor structure: double series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD132-14io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MCD132-08io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD132-16io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD132-12io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCD132-18io1 |
|
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 130A; Y4-M6; Ufmax: 1.08V; bulk
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX210P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTR210P10T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Power dissipation: 390W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -195A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
On-state resistance: 8mΩ
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTN210P10T |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Category: Transistor modules
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Pulsed drain current: -800A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -210A
Kind of channel: enhancement
Drain-source voltage: -100V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±15V
On-state resistance: 7.5mΩ
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IX9907N |
|
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
| IX9908N |
|
Hersteller: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Operating voltage: 650V DC
Mounting: SMD
Output current: 1.7A
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFB52N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 52A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: PLUS264™
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 308nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFH12N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 12A
Power dissipation: 380W
Case: TO247-3
On-state resistance: 1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFK32N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN52N90P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
Category: Transistor modules
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 900V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 0.16Ω
Reverse recovery time: 300ns
Pulsed drain current: 104A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 308nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFX32N90P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Drain current: 32A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 0.3Ω
Mounting: THT
Power dissipation: 960W
Gate charge: 215nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1025N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPC1025NTR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 400V AC; max. 400V DC
Case: SOP4
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IX4340UE |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Case: MSOP8
Mounting: SMD
Kind of package: tube
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Case: MSOP8
Mounting: SMD
Kind of package: tube
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 5...20V
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4340NE |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V
Kind of output: non-inverting
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
| IX4340NETR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8-EP; -5÷5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IX4340NTR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 5...20V
Kind of output: non-inverting
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IX4340UETR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MSOP8; -5÷5A; Ch: 2; 5÷20V
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: MSOP8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 5...20V
Kind of output: non-inverting
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| IXTQ50N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO3P
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
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| IXKN75N60C |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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| IXXH75N60C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 300A
Turn-on time: 105ns
Kind of package: tube
Case: TO247-3
Turn-off time: 185ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 750W
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 300A
Turn-on time: 105ns
Kind of package: tube
Case: TO247-3
Turn-off time: 185ns
Gate-emitter voltage: ±20V
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| IXXH75N60C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 105ns
Turn-off time: 165ns
Gate-emitter voltage: ±20V
Collector current: 75A
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| IXGN72N60C3H1 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
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| IXGH72N60C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
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| IXGX72N60C3H1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
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| LIA135S |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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| LIA135STR |
|
Hersteller: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC5712U |
|
Hersteller: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEP60-12A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 330W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.81V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 330W
Features of semiconductor devices: fast switching
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| DSEP60-12AR |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 2.66V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 230W
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 2.66V
Reverse recovery time: 40ns
Technology: HiPerFRED™
Power dissipation: 230W
Features of semiconductor devices: fast switching
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| DSEP60-12AZ-TRL |
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; D3PAK,TO268AA; reel,tape
Type of diode: rectifying
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
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| DSEP60-12AZ-TUB |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; 80ns; D3PAK,TO268AA; Ifsm: 500A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2.66V
Reverse recovery time: 80ns
Technology: FRED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 60A; 80ns; D3PAK,TO268AA; Ifsm: 500A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward impulse current: 0.5kA
Case: D3PAK; TO268AA
Kind of package: tube
Max. forward voltage: 2.66V
Reverse recovery time: 80ns
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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| DSA70C150HB |
|
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 35Ax2; TO247-3; Ufmax: 0.77V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.77V
Max. forward impulse current: 0.6kA
Power dissipation: 215W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 35Ax2; TO247-3; Ufmax: 0.77V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 35A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.77V
Max. forward impulse current: 0.6kA
Power dissipation: 215W
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXTP26P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH48P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 85mΩ
Reverse recovery time: 260ns
Power dissipation: 462W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -48A; 462W; TO247-3
Mounting: THT
Drain current: -48A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 85mΩ
Reverse recovery time: 260ns
Power dissipation: 462W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTQ26P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA26P20P |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO263
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTR48P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Drain current: -30A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 93mΩ
Reverse recovery time: 260ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -30A; 190W; 260ns
Mounting: THT
Drain current: -30A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 93mΩ
Reverse recovery time: 260ns
Power dissipation: 190W
Gate charge: 103nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH26P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO247-3
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247-3
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
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| IXTA26P20P-TRL |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
Drain current: 26A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 0.17Ω
Power dissipation: 300W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 26A; 300W; D2PAK,TO263
Mounting: SMD
Drain current: 26A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Gate-source voltage: 20V
Case: D2PAK; TO263
On-state resistance: 0.17Ω
Power dissipation: 300W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXTN90P20P |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Category: Transistor modules
Description: Module; single transistor; -200V; -90A; SOT227B; screw; Idm: -270A
Drain current: -90A
Kind of channel: enhancement
Drain-source voltage: -200V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 44mΩ
Reverse recovery time: 315ns
Pulsed drain current: -270A
Type of semiconductor module: MOSFET transistor
Power dissipation: 890W
Gate charge: 205nC
Polarisation: unipolar
Technology: PolarP™
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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