| Anzahl | Preis |
|---|---|
| 1+ | 19.61 EUR |
| 10+ | 11.88 EUR |
| 120+ | 11.86 EUR |
| 510+ | 11.37 EUR |
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Technische Details IXXH100N60B3 IXYS
Description: IGBT 600V 220A 830W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 30ns/120ns, Switching Energy: 1.9mJ (on), 2mJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 143 nC, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 830 W.
Weitere Produktangebote IXXH100N60B3 nach Preis ab 11.36 EUR bis 19.71 EUR
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IXXH100N60B3 | Hersteller : IXYS |
 Description: IGBT 600V 220A 830W TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 480 A Power - Max: 830 W |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXH100N60B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 600V Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 92ns Gate charge: 143nC |
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