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IXYH30N120C4H1

IXYH30N120C4H1 IXYS


media-3320115.pdf Hersteller: IXYS
IGBT Transistors IXYH30N120C4H1
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.76 EUR
10+ 11.81 EUR
30+ 10.68 EUR
120+ 9.82 EUR
270+ 9.24 EUR
510+ 8.68 EUR
1020+ 7.81 EUR
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Technische Details IXYH30N120C4H1 IXYS

Description: IGBT TRENCH 1200V 94A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 310 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247 (IXTH), IGBT Type: Trench, Td (on/off) @ 25°C: 18ns/205ns, Switching Energy: 4.8mJ (on), 1.5mJ (off), Test Condition: 960V, 25A, 5Ohm, 15V, Gate Charge: 57 nC, Current - Collector (Ic) (Max): 94 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 166 A, Power - Max: 500 W.

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IXYH30N120C4H1 Hersteller : IXYS media?resourcetype=datasheets&itemid=38854064-cefd-414a-b812-338e315098a1&filename=power_semiconductor_discrete_igbt_ixyh30n120c4h1_datasheet.pdf Description: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
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