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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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IXYP60N65A5 IXYP60N65A5 IXYS IXYP60N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
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IXYA60N65A5 IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXYA60N65A5-TRL IXYA60N65A5-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
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IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXYA20N65C3-TRL IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 108A
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Gate charge: 29nC
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IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
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CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Case: SOP4
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
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CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXXP12N65B4 IXXP12N65B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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DSEC16-12AS-TRL DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 40A
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MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 216A
Max. load current: 340A
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.2V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
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IXFK100N65X2 IXFK100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Drain current: 100A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Case: TO264
Kind of channel: enhancement
Mounting: THT
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IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
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IXYA50N65C5 IXYA50N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTXYA50N65C5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXYA50N65C3-TRL IXYA50N65C3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
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VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
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IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
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IXTK120N25P IXTK120N25P IXYS IXTK120N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
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IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
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IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
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IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
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VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
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GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
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VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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GBO25-16NO1 GBO25-16NO1 IXYS GBO25-16NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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VBO25-16NO2 VBO25-16NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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VBO25-12AO2 VBO25-12AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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IXBH14N300HV IXYS media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
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IXDD609PI IXDD609PI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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100+3.03 EUR
250+2.96 EUR
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IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609YI IXDD609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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23+3.8 EUR
50+3.33 EUR
100+3.13 EUR
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IXDD609D2TR IXDD609D2TR IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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IXDD609SITR IXDD609SITR IXYS IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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PLB190 PLB190 IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
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PLB190S PLB190S IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
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PLB190STR IXYS PLB190.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CPC1965Y CPC1965Y IXYS CPC1965G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 237 Stücke:
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CPC1945Y CPC1945Y IXYS CPC1945Y.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
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PD1201 PD1201 IXYS PD1201.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Mounting: THT
auf Bestellung 185 Stücke:
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CPC1943G CPC1943G IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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CPC1943GS CPC1943GS IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
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LCA210S LCA210S IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
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CPC1967J CPC1967J IXYS CPC1967.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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3+41.2 EUR
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LCA220 LCA220 IXYS LCA220.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA210 LCA210 IXYS LCA210.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
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10+8.9 EUR
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IXGH30N60C3D1 IXGH30N60C3D1 IXYS IXGH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 220W
Gate charge: 38nC
Technology: GenX3™; PT
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 37nC
Produkt ist nicht verfügbar
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MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Max. forward impulse current: 520A
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 36 Stücke:
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MCD26-08IO1B MCD26-08IO1B IXYS MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
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MCD95-16IO1B MCD95-16IO1B IXYS MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
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MCD56-08IO1B MCD56-08IO1B IXYS MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
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3+37.07 EUR
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MCD72-12IO1B MCD72-12IO1B IXYS MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 15 Stücke:
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MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
DSB15IM30UC-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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AnzahlPrivatkunde
2+56.98 EUR
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IXYP60N65A5 IXYP60N65A5.pdf
IXYP60N65A5
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
IXYA60N65A5
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYA60N65A5-TRL
IXYA60N65A5-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYA20N65C3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 58A; 230W; TO247-3
Type of transistor: IGBT
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 108A
Gate-emitter voltage: ±20V
Collector current: 58A
Collector-emitter voltage: 650V
Gate charge: 29nC
Produkt ist nicht verfügbar
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IXYP20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 50A
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
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CPC1006N CPC1006N.pdf
CPC1006N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Case: SOP4
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
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56+1.54 EUR
59+1.46 EUR
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CPC1018N cpc1018n.pdf
CPC1018N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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13+6.68 EUR
50+4.91 EUR
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IXXP12N65B4
IXXP12N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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21+4.11 EUR
25+3.42 EUR
35+2.5 EUR
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DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
DSEC16-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 216A
Max. load current: 340A
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.2V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
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IXFK100N65X2 IXFK(X)100N65X2.pdf
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Drain current: 100A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Case: TO264
Kind of channel: enhancement
Mounting: THT
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3+28.37 EUR
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 250A; 880W; TO247-3
Type of transistor: IGBT
Power dissipation: 880W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 250A
Collector-emitter voltage: 650V
Gate charge: 183nC
Pulsed collector current: 570A
Produkt ist nicht verfügbar
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IXYA50N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTXYA50N65C5Datasheet.pdf
IXYA50N65C5
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
Produkt ist nicht verfügbar
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IXYA50N65C3-TRL
IXYA50N65C3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
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4+23.43 EUR
5+20.67 EUR
10+18.68 EUR
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IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
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4+23.38 EUR
10+21.85 EUR
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IXTK120N25P IXTK120N25P-DTE.pdf
IXTK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO264
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Gate charge: 185nC
Reverse recovery time: 200ns
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Power dissipation: 700W
auf Bestellung 378 Stücke:
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4+23.43 EUR
5+20.1 EUR
10+18.21 EUR
25+16.35 EUR
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IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Technology: TrenchP™
Produkt ist nicht verfügbar
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IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
auf Bestellung 1 Stücke:
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IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
auf Bestellung 74 Stücke:
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25+3.51 EUR
28+3.15 EUR
31+2.77 EUR
70+2.62 EUR
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VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
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GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 63 Stücke:
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7+12.39 EUR
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VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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3+41.7 EUR
5+39.82 EUR
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GBO25-16NO1 GBO25-16NO1.pdf
GBO25-16NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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VBO25-16NO2 VBO25_ser.pdf
VBO25-16NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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VBO25-12AO2 VBO25_ser.pdf
VBO25-12AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Produkt ist nicht verfügbar
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IXBH14N300HV media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 38A; 200W; TO247HV
Mounting: THT
Case: TO247HV
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 3kV
Power dissipation: 200W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Produkt ist nicht verfügbar
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IXDD609PI IXDD609CI.pdf
IXDD609PI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 330 Stücke:
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37+2.31 EUR
50+1.7 EUR
55+1.57 EUR
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IXDD609CI IXDD609CI.pdf
IXDD609CI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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26+3.36 EUR
50+3.24 EUR
100+3.03 EUR
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IXDD609SI IXDD609CI.pdf
IXDD609SI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
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23+3.77 EUR
30+2.84 EUR
32+2.73 EUR
100+2.64 EUR
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IXDD609YI IXDD609CI.pdf
IXDD609YI
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.32 EUR
23+3.8 EUR
50+3.33 EUR
100+3.13 EUR
250+3.08 EUR
Mindestbestellmenge: 20 Stücke
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IXDD609D2TR IXDD609CI.pdf
IXDD609D2TR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 24 Stücke:
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AnzahlPrivatkunde
24+3.53 EUR
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IXDD609SITR IXD-609?assetguid=2E0352F3-1549-4FD2-9F7B-077F71DF5397
IXDD609SITR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
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PLB190 PLB190.pdf
PLB190
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 240 Stücke:
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AnzahlPrivatkunde
7+13.96 EUR
10+12.11 EUR
50+10.41 EUR
Mindestbestellmenge: 7 Stücke
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PLB190S PLB190.pdf
PLB190S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
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AnzahlPrivatkunde
7+13.89 EUR
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PLB190STR PLB190.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CPC1965Y CPC1965G.pdf
CPC1965Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.57 EUR
10+14.34 EUR
25+13.78 EUR
Mindestbestellmenge: 6 Stücke
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CPC1945Y CPC1945Y.pdf
CPC1945Y
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Turn-off time: 3ms
Control current max.: 100mA
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.15 EUR
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PD1201 PD1201.pdf
PD1201
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
Type of relay: solid state
Switching method: zero voltage switching
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Mounting: THT
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+22.43 EUR
10+18.35 EUR
25+16.23 EUR
100+13.74 EUR
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CPC1943G CPC1943.pdf
CPC1943G
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+20.11 EUR
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CPC1943GS CPC1943.pdf
CPC1943GS
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
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LCA210S LCA210.pdf
LCA210S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.01 EUR
50+9.84 EUR
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CPC1967J CPC1967.pdf
CPC1967J
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+41.2 EUR
25+39.69 EUR
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LCA220 LCA220.pdf
LCA220
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 120mA; max.250VAC
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPDT
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 100mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 20Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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LCA210 LCA210.pdf
LCA210
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Switched voltage: max. 350V AC; max. 350V DC
Mounting: THT
Relay variant: 1-phase; current source
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP8
Manufacturer series: OptoMOS
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 100mA
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.9 EUR
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IXGH30N60C3D1 IXGH30N60C3D1.pdf
IXGH30N60C3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 600V
Power dissipation: 220W
Gate charge: 38nC
Technology: GenX3™; PT
Produkt ist nicht verfügbar
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 110A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 600V
Power dissipation: 270W
Gate charge: 37nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 35A
Max. load current: 55A
Semiconductor structure: double series
Threshold on-voltage: 0.87V
Max. forward impulse current: 520A
Gate current: 78/200mA
Max. forward voltage: 1.22V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 36 Stücke:
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3+28.58 EUR
10+27.63 EUR
36+25.53 EUR
Mindestbestellmenge: 3 Stücke
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MCD26-08IO1B MCD26-08io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCD26-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 27A
Max. load current: 42A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 520A
Gate current: 100/200mA
Max. forward voltage: 1.27V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
2+42.54 EUR
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MCD95-16IO1B MCD95-16IO1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD95-16IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 116A
Max. load current: 180A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Max. forward voltage: 1.28V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 10 Stücke:
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AnzahlPrivatkunde
2+53.67 EUR
5+51.49 EUR
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MCD56-08IO1B MCD56-08io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD56-08IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 60A
Max. load current: 100A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Max. forward voltage: 1.24V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+37.07 EUR
10+33.39 EUR
Mindestbestellmenge: 3 Stücke
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MCD72-12IO1B MCD72-12io1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCD72-12IO1B
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Load current: 85A
Max. load current: 133A
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Max. forward voltage: 1.34V
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+52.53 EUR
3+46.41 EUR
10+41.66 EUR
Mindestbestellmenge: 2 Stücke
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MCD162-16io1 MCD162-16io1.pdf PCN241015_Y4-M6 screw.pdf
MCD162-16io1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Case: Y4-M6
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. forward voltage: 1.03V
Load current: 181A
Max. load current: 300A
Max. forward impulse current: 6kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+97.56 EUR
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