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IXFN55N50 IXFN55N50 IXYS 97502.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; tube
Type of thyristor: thyristor
Case: D3PAK; TO268AA
Mounting: SMD
Kind of package: tube
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CMA50E1600HB IXYS CMA50E1600HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
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CMA50E1600QB IXYS CMA50E1600QB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO3P
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
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CMA50E1600TZ-TRL IXYS CMA50E1600TZ.pdf Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; reel,tape
Type of thyristor: thyristor
Kind of package: reel; tape
Case: D3PAK; TO268AA
Mounting: SMD
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CMA50E1600TZ-TUB IXYS CMA50E1600TZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 50/80mA; TO268AA; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: TO268AA
Max. load current: 79A
Max. forward impulse current: 470A
Max. off-state voltage: 1.6kV
Mounting: SMD
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CPC2017N CPC2017N IXYS CPC2017N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
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CPC2017NTR IXYS CPC2017N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
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CPC2125N CPC2125N IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
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CPC2125NTR IXYS CPC2125N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
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CPC2014N CPC2014N IXYS CPC2014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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CPC2030N CPC2030N IXYS CPC2030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
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CPC2025NTR IXYS CPC2025N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
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CPC2014NTR IXYS CPC2014N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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CPC2030NTR IXYS CPC2030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
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VHFD37-16IO1 VHFD37-16IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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2+42.04 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
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LF2106NTR LF2106NTR IXYS LF2106NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
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IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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PM1206S PM1206S IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
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PM1206STR IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
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MG12100S-BN2MM IXYS media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: package S
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
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MG12150W-XN2MM IXYS littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
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MG12200D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
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MG12300D-BN2MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
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DSEC240-04A DSEC240-04A IXYS DSEC240-04A.pdf description Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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LOC112S LOC112S IXYS LOC112P.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
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22+3.36 EUR
24+3.05 EUR
26+2.79 EUR
30+2.39 EUR
50+2.12 EUR
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
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IXXH30N65B4 IXXH30N65B4 IXYS IXXH30N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYT30N65C3H1HV IXYS IXY_30N65C3H1_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXA30N65C3HV IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 113A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS IXXH30N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXXH30N65C4D1 IXXH30N65C4D1 IXYS IXXH30N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS IXY_30N65C3H1_HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYP30N65C3 IXYP30N65C3 IXYS IXYH(P)30N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXFR102N30P IXFR102N30P IXYS IXFR102N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
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DSEI30-06A DSEI30-06A IXYS DSEI30-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
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IXFK120N20P IXFK120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N25P IXFK120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
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IXFK120N30P3 IXFK120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
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LAA110S LAA110S IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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LAA110STR IXYS LAA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Gate charge: 110nC
Power dissipation: 430W
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Produkt ist nicht verfügbar
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IXFK94N50P2 IXFK94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFN94N50P2 IXFN94N50P2 IXYS IXFN94N50P2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 240A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
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IXFX94N50P2 IXFX94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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DSEP12-12A DSEP12-12A IXYS DSEP12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS DSEP12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 73 Stücke:
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DSEP12-12AZ-TRL IXYS Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; D2PAK,TO263AB; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Case: TO263
Technology: FRED
Kind of package: reel; tape
Produkt ist nicht verfügbar
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DHG55I3300FE IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Semiconductor structure: single diode
Max. forward voltage: 3.4V
Type of diode: rectifying
Load current: 50A
Case: ISOPLUS i4-pac™ x024e
Max. forward impulse current: 0.6kA
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MDD142-14N1 IXYS MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.7kA
Max. load current: 300A
Semiconductor structure: double series
Electrical mounting: screw
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IXHX40N150V1HV IXHX40N150V1HV IXYS IXHX40N150V1HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Produkt ist nicht verfügbar
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IXHH40N150HV IXHH40N150HV IXYS IXHH40N150HV.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
Produkt ist nicht verfügbar
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IXTH240N15X4 IXTH240N15X4 IXYS IXTH240N15X4_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFX240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK240N15T2 IXYS IXFK(X)240N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Produkt ist nicht verfügbar
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IXFN55N50 description 97502.pdf
IXFN55N50
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
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CPC1020N cpc1020n.pdf
CPC1020N
Hersteller: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020N.pdf
CPC1020NTR
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; tube
Type of thyristor: thyristor
Case: D3PAK; TO268AA
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
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CMA50E1600HB CMA50E1600HB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO247AD
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
Produkt ist nicht verfügbar
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CMA50E1600QB CMA50E1600QB.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
Load current: 50A
Case: TO3P
Max. load current: 79A
Max. forward impulse current: 595A
Max. off-state voltage: 1.6kV
Mounting: THT
Produkt ist nicht verfügbar
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CMA50E1600TZ-TRL CMA50E1600TZ.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; D3PAK,TO268AA; SMD; reel,tape
Type of thyristor: thyristor
Kind of package: reel; tape
Case: D3PAK; TO268AA
Mounting: SMD
Produkt ist nicht verfügbar
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CMA50E1600TZ-TUB CMA50E1600TZ.pdf
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 50/80mA; TO268AA; SMD; tube
Type of thyristor: thyristor
Kind of package: tube
Gate current: 50/80mA
Load current: 50A
Case: TO268AA
Max. load current: 79A
Max. forward impulse current: 470A
Max. off-state voltage: 1.6kV
Mounting: SMD
Produkt ist nicht verfügbar
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CPC2017N CPC2017N.pdf
CPC2017N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50000mA; 120mA; 16Ω
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50000mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
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CPC2017NTR CPC2017N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; max.60VAC
Case: SO8
On-state resistance: 16Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Produkt ist nicht verfügbar
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CPC2125N CPC2125N.pdf
CPC2125N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
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CPC2125NTR CPC2125N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Case: SO8
On-state resistance: 35Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Produkt ist nicht verfügbar
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CPC2014N CPC2014N.pdf
CPC2014N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC2030N CPC2030N.pdf
CPC2030N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Produkt ist nicht verfügbar
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CPC2025NTR CPC2025N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Operating temperature: -40...85°C
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Mounting: SMT
Manufacturer series: OptoMOS
Case: SO8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Produkt ist nicht verfügbar
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CPC2014NTR CPC2014N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 400mA; max.60VAC
Case: SO8
On-state resistance: 2Ω
Mounting: SMT
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Produkt ist nicht verfügbar
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CPC2030NTR CPC2030N.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: SO8
On-state resistance: 30Ω
Mounting: SMT
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Produkt ist nicht verfügbar
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VHFD37-16IO1 VHFD37-ser.pdf
VHFD37-16IO1
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.04 EUR
10+39.04 EUR
Mindestbestellmenge: 2
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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LF2106NTR LF2106NTR.pdf
LF2106NTR
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Produkt ist nicht verfügbar
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IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 32A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.31Ω
Pulsed drain current: 100A
Power dissipation: 1kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 360nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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PM1206S PM1206.pdf
PM1206S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
Produkt ist nicht verfügbar
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PM1206STR PM1206.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP6
Produkt ist nicht verfügbar
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MG12100S-BN2MM media?resourcetype=datasheets&itemid=e4f80881-79d4-48fd-9161-54b8568e400c&filename=littelfuse_power_semiconductor_igbt_module_mg12100s_bn2mm_datasheet.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: package S
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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MG12150W-XN2MM littelfuse_power_semiconductor_igbt_module_mg12150w_xn2mm_datasheet.pdf.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: package W
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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MG12200D-BN2MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: Y3-DCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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MG12300D-BN2MM
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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DSEC240-04A description DSEC240-04A.pdf
DSEC240-04A
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 120Ax2; SOT227UI
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. forward impulse current: 2kA
Max. off-state voltage: 0.4kV
Load current: 120A x2
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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LOC112S LOC112P.pdf
LOC112S
Hersteller: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
24+3.05 EUR
26+2.79 EUR
30+2.39 EUR
50+2.12 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DSA320A100NB
DSA320A100NB
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double x2,common anode; 100V; 80Ax4; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Kind of package: tube
Max. forward voltage: 0.77V
Load current: 80A x4
Max. off-state voltage: 0.1kV
Case: SOT227B
Semiconductor structure: common anode; double x2
Type of semiconductor module: diode
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+30.12 EUR
Mindestbestellmenge: 3
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IXXH30N65B4 IXXH30N65B4.pdf
IXXH30N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV IXY_30N65C3H1_HV.pdf
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXXA30N65C3HV
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 52A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 52A
Pulsed collector current: 113A
Produkt ist nicht verfügbar
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IXXH30N65B4D1 IXXH30N65B4D1.pdf
IXXH30N65B4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
Produkt ist nicht verfügbar
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IXXH30N65C4D1 IXXH30N65C4D1.pdf
IXXH30N65C4D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
Produkt ist nicht verfügbar
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IXYH30N65C3H1 IXY_30N65C3H1_HV.pdf
IXYH30N65C3H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXYP30N65C3 IXYH(P)30N65C3.pdf
IXYP30N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Produkt ist nicht verfügbar
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IXFR102N30P IXFR102N30P.pdf
IXFR102N30P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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DSEI30-06A description DSEI30-06A.pdf
DSEI30-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.09 EUR
19+3.82 EUR
Mindestbestellmenge: 18
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IXFK120N20P IXFH(K)120N20P.pdf
IXFK120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 152nC
On-state resistance: 22mΩ
Drain current: 120A
Drain-source voltage: 200V
Power dissipation: 714W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK120N25P IXFK(X)120N25P.pdf
IXFK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXFK120N30P3 IXFK(X)120N30P3.pdf
IXFK120N30P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.49 EUR
10+7.32 EUR
25+6.03 EUR
50+5.63 EUR
Mindestbestellmenge: 9
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LAA110S LAA110.pdf
LAA110S
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LAA110STR LAA110.pdf
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Produkt ist nicht verfügbar
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3.6kV; 70A; 430W; TO247HV
Mounting: THT
Gate charge: 110nC
Power dissipation: 430W
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 220A
Collector-emitter voltage: 3.6kV
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
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IXFK94N50P2 IXFx94N50P2.pdf
IXFK94N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
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IXFN94N50P2 IXFN94N50P2.pdf
IXFN94N50P2
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Reverse recovery time: 250ns
Pulsed drain current: 240A
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
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IXFX94N50P2 IXFx94N50P2.pdf
IXFX94N50P2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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DSEP12-12A DSEP12-12A.pdf
DSEP12-12A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
25+2.92 EUR
50+1.93 EUR
Mindestbestellmenge: 20
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DSEP12-12AZ-TUB DSEP12-12AZ.pdf
DSEP12-12AZ-TUB
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
25+2.93 EUR
28+2.6 EUR
50+2.37 EUR
Mindestbestellmenge: 22
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DSEP12-12AZ-TRL Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; D2PAK,TO263AB; Ifsm: 90A
Type of diode: rectifying
Mounting: SMD
Case: TO263
Technology: FRED
Kind of package: reel; tape
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DHG55I3300FE
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Semiconductor structure: single diode
Max. forward voltage: 3.4V
Type of diode: rectifying
Load current: 50A
Case: ISOPLUS i4-pac™ x024e
Max. forward impulse current: 0.6kA
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Mounting: THT
Kind of package: tube
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MDD142-14N1 MDD142-14N1.pdf PCN241015_Y4-M6 screw.pdf
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. forward voltage: 1.05V
Load current: 165A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.7kA
Max. load current: 300A
Semiconductor structure: double series
Electrical mounting: screw
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+79.78 EUR
3+71.86 EUR
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IXHX40N150V1HV IXHX40N150V1HV.pdf
IXHX40N150V1HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247PLUS-HV; THT; tube; 7.6kA
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXHH40N150HV IXHH40N150HV.pdf
IXHH40N150HV
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; TO247HV; THT; tube; 7.6kA
Case: TO247HV
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: MOS-gated thyristor (MGT)
Max. off-state voltage: 1.5kV
Max. forward impulse current: 7.6kA
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IXTH240N15X4 IXTH240N15X4_HV.pdf
IXTH240N15X4
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Features of semiconductor devices: ultra junction x-class
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IXFX240N15T2 IXFK(X)240N15T2.pdf
IXFX240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFK240N15T2 IXFK(X)240N15T2.pdf
IXFK240N15T2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 240A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; TrenchT2™
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