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CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Max. forward impulse current: 0.65kA
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: tube
Case: TO247AD
Type of thyristor: thyristor
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13+6.68 EUR
16+6.37 EUR
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CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Mounting: SMD
Max. forward impulse current: 555A
Gate current: 50/80mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: tube
Case: D3PAK
Type of thyristor: thyristor
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10+9.94 EUR
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CLA50E1200TC-TRL IXYS Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4 Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Mounting: SMD
Max. forward impulse current: 555A
Gate current: 50/80mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: reel; tape
Case: D3PAK
Type of thyristor: thyristor
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PD2401 PD2401 IXYS PD2401.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Case: DIP4
Control current max.: 100mA
Mounting: THT
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
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DSS16-01A DSS16-01A IXYS DSS16-01A_AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
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IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFR80N60P3 IXFR80N60P3 IXYS IXFR80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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IXFX80N60P3 IXFX80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CLA80E1200HF CLA80E1200HF IXYS CLA80E1200HF.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
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9+10.61 EUR
10+9.9 EUR
15+9.51 EUR
20+9.33 EUR
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IXFH10N100P IXFH10N100P IXYS IXFH10N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
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9+10.44 EUR
10+9.41 EUR
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IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Technology: X2-Class
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IXTH11P50 IXTH11P50 IXYS DS94535L(IXTH-T11P50).pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 145nC
Polarisation: unipolar
Drain current: -11A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Reverse recovery time: 0.5µs
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7+13.49 EUR
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IXFQ140N20X3 IXFQ140N20X3 IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Power dissipation: 830W
Gate charge: 240nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS IXGH48N60A3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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DSS16-0045AS-TRL DSS16-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 0.5mA
Capacitance: 710pF
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DSS16-01AS-TRL DSS16-01AS-TRL IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Leakage current: 0.5mA
Capacitance: 334pF
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DPS30I600HA IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
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IXFR24N100Q3 IXFR24N100Q3 IXYS IXFR24N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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IXFN24N100 IXFN24N100 IXYS IXFN24N100-DTE.pdf description Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
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IXTX24N100 IXTX24N100 IXYS IXTX24N100.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
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IXTX120P20T IXTX120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: PLUS247™
On-state resistance: 30mΩ
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3+34.03 EUR
10+30.5 EUR
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IXBH16N170 IXBH16N170 IXYS IXBH16N170_IXBT16N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 940ns
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 220ns
Kind of package: tube
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IXBH16N170A IXBH16N170A IXYS IXBH(T)16N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
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IXTQ50N20P IXTQ50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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15+5.83 EUR
30+5.24 EUR
60+4.87 EUR
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IXTP50N25T IXTP50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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13+6.84 EUR
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50+4.82 EUR
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IXTA50N20P IXTA50N20P IXYS IXTA50N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTP50N20PM IXTP50N20PM IXYS IXTP50N20PM-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
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IXTA50N25T IXTA50N25T IXYS IXTA(H,P,Q)50N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
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DSB15IM30UC-TRL DSB15IM30UC-TRL IXYS dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
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DPF240X400NA DPF240X400NA IXYS DPF240X400NA.pdf Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
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IXYP60N65A5 IXYP60N65A5 IXYS IXYP60N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
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IXYA60N65A5 IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXYA60N65A5-TRL IXYA60N65A5-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
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IXYA20N65C3-TRL IXYA20N65C3-TRL IXYS littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
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IXYP20N65C3 IXYP20N65C3 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
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CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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56+1.54 EUR
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CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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13+6.68 EUR
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IXXP12N65B4 IXXP12N65B4 IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
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DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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DSEC16-12AS-TRL DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 40A
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MCD200-16IO1 MCD200-16IO1 IXYS MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 216A
Max. load current: 340A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.2V
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IXFK100N65X2 IXFK100N65X2 IXYS IXFK(X)100N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Drain current: 100A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Case: TO264
Kind of channel: enhancement
Mounting: THT
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IXYA50N65C5 IXYA50N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTXYA50N65C5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
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IXYA50N65C3-TRL IXYA50N65C3-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
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IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
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IXTK120N25P IXTK120N25P IXYS IXTK120N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
On-state resistance: 24mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
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IXTP120P065T IXTP120P065T IXYS IXT_120P065T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Reverse recovery time: 53ns
Mounting: THT
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
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IXTQ120N20P IXTQ120N20P IXYS IXTK120N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
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IXTY1N120P IXTY1N120P IXYS IXTY(A,P)1N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
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VBO25-12NO2 VBO25-12NO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
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GBO25-12NO1 GBO25-12NO1 IXYS GBO25-12NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
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VBO25-16AO2 VBO25-16AO2 IXYS VBO25_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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GBO25-16NO1 GBO25-16NO1 IXYS GBO25-16NO1.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
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CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Max. forward impulse current: 0.65kA
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: tube
Case: TO247AD
Type of thyristor: thyristor
auf Bestellung 80 Stücke:
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13+6.68 EUR
16+6.37 EUR
30+5.97 EUR
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CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Mounting: SMD
Max. forward impulse current: 555A
Gate current: 50/80mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: tube
Case: D3PAK
Type of thyristor: thyristor
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CLA50E1200TC-TRL Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet?assetguid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Mounting: SMD
Max. forward impulse current: 555A
Gate current: 50/80mA
Max. off-state voltage: 1.2kV
Load current: 50A
Max. load current: 79A
Kind of package: reel; tape
Case: D3PAK
Type of thyristor: thyristor
Produkt ist nicht verfügbar
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PD2401 PD2401.pdf
PD2401
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 500V AC
Relay variant: 1-phase
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Case: DIP4
Control current max.: 100mA
Mounting: THT
Body dimensions: 19.2x6.35x3.3mm
Operating temperature: -40...85°C
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6+15.76 EUR
25+15.08 EUR
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DSS16-01A DSS16-01A_AR.pdf
DSS16-01A
Hersteller: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 16A; TO220AC; Ufmax: 0.64V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 230A
Kind of package: tube
Max. load current: 35A
Power dissipation: 105W
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IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFR80N60P3 IXFR80N60P3.pdf
IXFR80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXFX80N60P3 IXFK(X)80N60P3.pdf
IXFX80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CLA80E1200HF CLA80E1200HF.pdf
CLA80E1200HF
Hersteller: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Max. forward impulse current: 765A
Gate current: 38mA
Max. off-state voltage: 1.2kV
Load current: 80A
Max. load current: 126A
Kind of package: tube
Case: PLUS247™
auf Bestellung 173 Stücke:
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7+12.23 EUR
9+10.61 EUR
10+9.9 EUR
15+9.51 EUR
20+9.33 EUR
30+9.29 EUR
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IXFH10N100P IXFH10N100P.pdf
IXFH10N100P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 380W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.47 EUR
9+10.44 EUR
10+9.41 EUR
30+7.96 EUR
60+7.59 EUR
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IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Technology: X2-Class
Produkt ist nicht verfügbar
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IXTH11P50 DS94535L(IXTH-T11P50).pdf
IXTH11P50
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 145nC
Polarisation: unipolar
Drain current: -11A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Reverse recovery time: 0.5µs
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.43 EUR
7+13.49 EUR
10+12.1 EUR
30+11.96 EUR
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IXFQ140N20X3 IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFQ140N20X3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 37 Stücke:
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AnzahlPrivatkunde
6+15.42 EUR
7+13.66 EUR
10+12.27 EUR
30+12.08 EUR
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Power dissipation: 830W
Gate charge: 240nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Produkt ist nicht verfügbar
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IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
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IXGH48N60A3D1 IXGH48N60A3D1.pdf
IXGH48N60A3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
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DSS16-0045AS-TRL media?resourcetype=datasheets&itemid=c16e9d10-00d5-476f-bb47-f1fb327bacda&filename=power_semiconductor_discrete_diode_dss16-0045as_datasheet.pdf
DSS16-0045AS-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 0.5mA
Capacitance: 710pF
Produkt ist nicht verfügbar
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DSS16-01AS-TRL
DSS16-01AS-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 230A
Kind of package: reel; tape
Leakage current: 0.5mA
Capacitance: 334pF
Produkt ist nicht verfügbar
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DPS30I600HA
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 450A; TO247-2; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Reverse recovery time: 120ns
Technology: FRED
Produkt ist nicht verfügbar
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IXFR24N100Q3 IXFR24N100Q3.pdf
IXFR24N100Q3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+38.02 EUR
10+34.36 EUR
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IXFN24N100 description IXFN24N100-DTE.pdf
IXFN24N100
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
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IXTX24N100 IXTX24N100.pdf
IXTX24N100
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
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IXTX120P20T IXT_120P20T.pdf
IXTX120P20T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Reverse recovery time: 300ns
Mounting: THT
Power dissipation: 1.04kW
Gate charge: 740nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: PLUS247™
On-state resistance: 30mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+34.03 EUR
10+30.5 EUR
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IXBH16N170 IXBH16N170_IXBT16N170.pdf
IXBH16N170
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 940ns
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 220ns
Kind of package: tube
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.3 EUR
10+16.7 EUR
30+16.08 EUR
60+15.76 EUR
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IXBH16N170A IXBH(T)16N170A.pdf
IXBH16N170A
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Case: TO247-3
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Kind of package: tube
Produkt ist nicht verfügbar
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IXTQ50N20P IXTA50N20P-DTE.pdf
IXTQ50N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.68 EUR
15+5.83 EUR
30+5.24 EUR
60+4.87 EUR
120+4.47 EUR
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IXTP50N25T IXTA(H,P,Q)50N25T.pdf
IXTP50N25T
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.91 EUR
13+6.84 EUR
25+5.77 EUR
50+4.82 EUR
100+4.64 EUR
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IXTA50N20P IXTA50N20P-DTE.pdf
IXTA50N20P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTP50N20PM IXTP50N20PM-DTE.pdf
IXTP50N20PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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IXTA50N25T IXTA(H,P,Q)50N25T.pdf
IXTA50N25T
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
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DSB15IM30UC-TRL dsb15im30uc-datasheet?assetguid=8aadd54f-0b28-4f5d-803e-b6fbf3b94b15
DSB15IM30UC-TRL
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Produkt ist nicht verfügbar
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DPF240X400NA DPF240X400NA.pdf
DPF240X400NA
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Kind of package: tube
Max. forward voltage: 1.06V
Load current: 120A x2
Max. load current: 240A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+56.98 EUR
Mindestbestellmenge: 2 Stücke
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IXYP60N65A5 IXYP60N65A5.pdf
IXYP60N65A5
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
IXYA60N65A5
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYA60N65A5-TRL
IXYA60N65A5-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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IXYA20N65C3-TRL littelfuse-discrete-igbts-ixy-20n65c3-datasheet?assetguid=3b358faf-e927-45eb-bcf4-0c8e79ff0e79
IXYA20N65C3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 230W; D2PAK
Type of transistor: IGBT
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 105A
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
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IXYP20N65C3
IXYP20N65C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 105A
Collector current: 50A
Collector-emitter voltage: 650V
Gate charge: 30nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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CPC1006N CPC1006N.pdf
CPC1006N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 10ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 75mA
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
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CPC1018N cpc1018n.pdf
CPC1018N
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 60V AC; max. 60V DC
Case: SOP4
Max. operating current: 0.6A
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
auf Bestellung 249 Stücke:
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IXXP12N65B4
IXXP12N65B4
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
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DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
DSEC16-12AS-TRL
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Mounting: SMD
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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MCD200-16IO1 MCD200-16IO1-DTE.pdf PCN241015_Y4-M6 screw.pdf
MCD200-16IO1
Hersteller: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 216A; Y4-M6; Ufmax: 1.2V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Load current: 216A
Max. load current: 340A
Kind of package: bulk
Semiconductor structure: double series
Threshold on-voltage: 0.8V
Case: Y4-M6
Max. forward impulse current: 8kA
Gate current: 150/220mA
Max. forward voltage: 1.2V
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IXFK100N65X2 IXFK(X)100N65X2.pdf
IXFK100N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 183nC
On-state resistance: 30mΩ
Drain current: 100A
Drain-source voltage: 650V
Power dissipation: 1.04kW
Case: TO264
Kind of channel: enhancement
Mounting: THT
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IXYA50N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTXYA50N65C5Datasheet.pdf
IXYA50N65C5
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 650W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 650W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: SMD
Gate charge: 117nC
Kind of package: tube
Turn-off time: 170ns
Produkt ist nicht verfügbar
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IXYA50N65C3-TRL
IXYA50N65C3-TRL
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 132A; 600W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 132A
Power dissipation: 600W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Turn-off time: 90ns
Produkt ist nicht verfügbar
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VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
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IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
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4+23.38 EUR
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IXTK120N25P IXTK120N25P-DTE.pdf
IXTK120N25P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
On-state resistance: 24mΩ
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
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IXTP120P065T IXT_120P065T.pdf
IXTP120P065T
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Reverse recovery time: 53ns
Mounting: THT
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
auf Bestellung 294 Stücke:
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11+7.88 EUR
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IXTQ120N20P IXTK120N20P-DTE.pdf
IXTQ120N20P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
On-state resistance: 22mΩ
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
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IXTY1N120P IXTY(A,P)1N120P.pdf
IXTY1N120P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
auf Bestellung 74 Stücke:
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25+3.51 EUR
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31+2.77 EUR
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VBO25-12NO2 VBO25_ser.pdf
VBO25-12NO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
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GBO25-12NO1 GBO25-12NO1.pdf
GBO25-12NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
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VBO25-16AO2 VBO25_ser.pdf
VBO25-16AO2
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
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3+41.7 EUR
5+39.82 EUR
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GBO25-16NO1 GBO25-16NO1.pdf
GBO25-16NO1
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
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