| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFQ140N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264 Mounting: THT Power dissipation: 830W Gate charge: 240nC Polarisation: unipolar Drain current: 140A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 18mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXFT140N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Power dissipation: 800W Gate charge: 240nC Polarisation: unipolar Technology: PolarHT™ Drain current: 140A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 18mΩ Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXGH48N60A3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSS16-0045AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 45V Load current: 1.5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Capacitance: 710pF Type of diode: Schottky rectifying Max. forward impulse current: 280A Max. forward voltage: 0.67V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSS16-01AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.5mA Capacitance: 334pF Type of diode: Schottky rectifying Max. forward impulse current: 230A Max. forward voltage: 0.79V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DPS30I600HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns Max. off-state voltage: 0.6kV Load current: 30A Kind of package: tube Case: TO247-2 Type of diode: rectifying Reverse recovery time: 120ns Mounting: THT Max. forward impulse current: 0.45kA Technology: FRED |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IXFR24N100Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 18A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 0.49Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXFN24N100 | IXYS |
 Category: Transistor modulesDescription: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Pulsed drain current: 96A Power dissipation: 568W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 390mΩ Gate charge: 250nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Technology: HiPerFET™ Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTX24N100 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTX120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -120A Power dissipation: 1.04kW Case: PLUS247™ Gate-source voltage: ±15V On-state resistance: 30mΩ Mounting: THT Gate charge: 740nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH16N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3 Mounting: THT Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 72nC Technology: BiMOSFET™; FRED Features of semiconductor devices: high voltage Pulsed collector current: 120A Type of transistor: IGBT Turn-on time: 220ns Kind of package: tube Case: TO247-3 Turn-off time: 940ns Gate-emitter voltage: ±20V Collector current: 16A |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBH16N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Turn-off time: 370ns Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 1.7kV Power dissipation: 150W Gate charge: 65nC Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 43ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ50N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
auf Bestellung 203 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP50N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA50N20P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP50N20PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: Polar™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTA50N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSB15IM30UC-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 15A Semiconductor structure: single diode Case: DPAK; SC63 Max. forward voltage: 0.51V Max. forward impulse current: 0.3kA Kind of package: reel; tape Leakage current: 5mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 32000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DPF240X400NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw Max. forward voltage: 1.06V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.4kV Electrical mounting: screw Load current: 120A x2 Max. load current: 240A Kind of package: tube Semiconductor structure: double independent Case: SOT227B Max. forward impulse current: 1.2kA |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXYP60N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3 Type of transistor: IGBT Case: TO220-3 Mounting: THT Kind of package: tube Power dissipation: 395W Gate charge: 128nC Pulsed collector current: 260A Gate-emitter voltage: ±20V Collector current: 134A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYA60N65A5 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK Type of transistor: IGBT Case: D2PAK Mounting: SMD Kind of package: tube Power dissipation: 395W Gate charge: 128nC Pulsed collector current: 260A Gate-emitter voltage: ±20V Collector current: 60A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXYA60N65A5-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; TO263 Type of transistor: IGBT Case: TO263 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYH60N65A5 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 395W Gate charge: 128nC Pulsed collector current: 260A Gate-emitter voltage: ±20V Collector current: 60A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CPC1006N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Type of relay: solid state Max. operating current: 75mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 10ms Case: SOP4 Turn-off time: 10ms Control current max.: 50mA On-state resistance: 10Ω Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NO Insulation voltage: 1.5kV |
auf Bestellung 1824 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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CPC1018N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Body dimensions: 4.09x3.81x2.03mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 3ms Case: SOP4 Turn-off time: 2ms Control current max.: 50mA On-state resistance: 0.8Ω Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NO Insulation voltage: 1.5kV |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXXP12N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3 Type of transistor: IGBT Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 38A Collector-emitter voltage: 650V Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W Reverse recovery time: 30ns Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 2.1V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Heatsink thickness: 1.14...1.39mm Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-06AC | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube Reverse recovery time: 30ns Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 2.1V Power dissipation: 60W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: ISOPLUS220™ Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DSEC16-12AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V Reverse recovery time: 40ns Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 2.94V Technology: FRED Max. off-state voltage: 1.2kV Load current: 8A Kind of package: reel; tape Semiconductor structure: common cathode Case: D2PAK; TO263AB Type of diode: rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFK100N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns Power dissipation: 1.04kW Gate charge: 183nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 100A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: TO264 On-state resistance: 30mΩ Reverse recovery time: 200ns Mounting: THT |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VHF25-12IO7 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 32A Max. forward impulse current: 180A Gate current: 25/50mA Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Leads: wire Ø 0.75mm Features of semiconductor devices: freewheelling diode |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXBT24N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Turn-on time: 190ns Turn-off time: 1285ns Gate-emitter voltage: ±20V Collector current: 24A Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC Features of semiconductor devices: high voltage Pulsed collector current: 230A Type of transistor: IGBT |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTK120N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264 Reverse recovery time: 200ns Mounting: THT Power dissipation: 700W Gate charge: 185nC Polarisation: unipolar Technology: Polar™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO264 On-state resistance: 24mΩ |
auf Bestellung 428 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTP120P065T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO220AB On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXTQ120N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P Reverse recovery time: 180ns Mounting: THT Power dissipation: 714W Gate charge: 152nC Polarisation: unipolar Technology: PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P On-state resistance: 22mΩ |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXTY1N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: TO252 Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Reverse recovery time: 900ns On-state resistance: 20Ω Power dissipation: 63W |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-12NO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Version: square Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 38A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: FO-A Kind of package: bulk Leads: connectors FASTON |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GBO25-12NO1 | IXYS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A Version: flat Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 25A Max. forward impulse current: 370A Max. off-state voltage: 1.2kV Case: GBFP Kind of package: tube Leads: flat pin |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-16AO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GBO25-16NO1 | IXYS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Version: flat Case: GBFP Electrical mounting: THT Leads: flat pin Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-16NO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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VBO25-12AO2 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 38A Max. forward impulse current: 370A Version: square Case: FO-A Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Features of semiconductor devices: avalanche breakdown effect |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IXDD609SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
IXDD609YI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
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 |
IXDD609D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
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| IXDD609SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
PLB190 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Manufacturer series: OptoMOS Relay variant: 1-phase; current source Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NC Insulation voltage: 5kV Turn-on time: 1ms Switched voltage: max. 400V AC; max. 400V DC Case: DIP6 Max. operating current: 0.13A Turn-off time: 2.5ms Control current max.: 50mA On-state resistance: 25Ω Type of relay: solid state Mounting: THT |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
PLB190S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
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| PLB190STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 25Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 1ms Turn-off time: 2.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
CPC1965Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 260V AC Case: SIP4 Max. operating current: 1A Control current max.: 100mA |
auf Bestellung 228 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
CPC1945Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS Operating temperature: -40...85°C Mounting: THT Manufacturer series: OptoMOS Relay variant: 1-phase Kind of output: MOSFET Body dimensions: 19.2x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Switching method: zero voltage switching Switched voltage: max. 120V AC Case: SIP4 Max. operating current: 1A Turn-off time: 3ms Control current max.: 100mA On-state resistance: 0.34Ω Type of relay: solid state |
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 |
PD1201 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase Operating temperature: -40...85°C Insulation voltage: 3.75kV Type of relay: solid state Mounting: THT Relay variant: 1-phase Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP4 Max. operating current: 1A Control current max.: 100mA |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
CPC1943G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Operating temperature: -40...85°C Mounting: THT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
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 |
CPC1943GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Operating temperature: -40...85°C Mounting: SMT Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Switching method: zero voltage switching Switched voltage: max. 400V AC Case: DIP6 Max. operating current: 0.5A Control current max.: 100mA Type of relay: solid state |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
LCA210S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω Type of relay: solid state Contacts configuration: SPDT Max. operating current: 85mA Mounting: SMT Manufacturer series: OptoMOS Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Case: DIP8 Turn-off time: 3ms Control current max.: 100mA On-state resistance: 35Ω Relay variant: 1-phase; current source Kind of output: MOSFET |
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 |
CPC1967J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Contacts configuration: SPST-NO Insulation voltage: 2.5kV Turn-on time: 20ms Switched voltage: max. 400V AC; max. 400V DC Case: i4-pac Max. operating current: 1350mA Turn-off time: 5ms Control current max.: 100mA On-state resistance: 0.85Ω Type of relay: solid state Mounting: THT Relay variant: 1-phase; current source Kind of output: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFQ140N20X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFK140N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Power dissipation: 830W
Gate charge: 240nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Mounting: THT
Power dissipation: 830W
Gate charge: 240nC
Polarisation: unipolar
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFT140N20X3HV |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTK140N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Power dissipation: 800W
Gate charge: 240nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 140A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 18mΩ
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGH48N60A3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| DSS16-0045AS-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 710pF
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.67V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 45V; 1.5A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 710pF
Type of diode: Schottky rectifying
Max. forward impulse current: 280A
Max. forward voltage: 0.67V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| DSS16-01AS-TRL |
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 334pF
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.79V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 16A
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.5mA
Capacitance: 334pF
Type of diode: Schottky rectifying
Max. forward impulse current: 230A
Max. forward voltage: 0.79V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| DPS30I600HA |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 120ns
Mounting: THT
Max. forward impulse current: 0.45kA
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; Ifsm: 450A; TO247-2; tube; 120ns
Max. off-state voltage: 0.6kV
Load current: 30A
Kind of package: tube
Case: TO247-2
Type of diode: rectifying
Reverse recovery time: 120ns
Mounting: THT
Max. forward impulse current: 0.45kA
Technology: FRED
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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Stück im Wert von UAH
| IXFR24N100Q3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 0.49Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFN24N100 |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Category: Transistor modules
Description: Module; single transistor; 1kV; 24A; SOT227B; screw; Idm: 96A; 568W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Pulsed drain current: 96A
Power dissipation: 568W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Gate charge: 250nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX24N100 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 24A
Power dissipation: 568W
Case: PLUS247™
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 850ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTX120P20T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Power dissipation: 1.04kW
Case: PLUS247™
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 740nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH16N170 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 220ns
Kind of package: tube
Case: TO247-3
Turn-off time: 940ns
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 72nC
Technology: BiMOSFET™; FRED
Features of semiconductor devices: high voltage
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 220ns
Kind of package: tube
Case: TO247-3
Turn-off time: 940ns
Gate-emitter voltage: ±20V
Collector current: 16A
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBH16N170A |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Turn-off time: 370ns
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 1.7kV
Power dissipation: 150W
Gate charge: 65nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 43ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTQ50N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP50N25T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTA50N20P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTP50N20PM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA50N25T |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSB15IM30UC-TRL |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63; SMD; 30V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 15A
Semiconductor structure: single diode
Case: DPAK; SC63
Max. forward voltage: 0.51V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Leakage current: 5mA
Produkt ist nicht verfügbar
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| DPF240X400NA |
|
Hersteller: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. forward voltage: 1.06V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Electrical mounting: screw
Load current: 120A x2
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Max. forward impulse current: 1.2kA
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| IXYP60N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 134A; 395W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 134A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYA60N65A5 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; D2PAK
Type of transistor: IGBT
Case: D2PAK
Mounting: SMD
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| IXYA60N65A5-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXYH60N65A5 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 395W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 395W
Gate charge: 128nC
Pulsed collector current: 260A
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| CPC1006N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Case: SOP4
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Case: SOP4
Turn-off time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
auf Bestellung 1824 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1018N |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 3ms
Case: SOP4
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 3ms
Case: SOP4
Turn-off time: 2ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
| IXXP12N65B4 |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 38A; 160W; TO220-3
Type of transistor: IGBT
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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| DSEC16-06A |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; TO220AB; tube; 60W
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| DSEC16-06AC |
|
Hersteller: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; Ifsm: 50A; ISOPLUS220™; tube
Reverse recovery time: 30ns
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 2.1V
Power dissipation: 60W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DSEC16-12AS-TRL |
|
Hersteller: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 40ns; D2PAK,TO263AB; Ufmax: 2.94V
Reverse recovery time: 40ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 2.94V
Technology: FRED
Max. off-state voltage: 1.2kV
Load current: 8A
Kind of package: reel; tape
Semiconductor structure: common cathode
Case: D2PAK; TO263AB
Type of diode: rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IXFK100N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Power dissipation: 1.04kW
Gate charge: 183nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 30mΩ
Reverse recovery time: 200ns
Mounting: THT
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| VHF25-12IO7 |
|
Hersteller: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IXBT24N170 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-on time: 190ns
Turn-off time: 1285ns
Gate-emitter voltage: ±20V
Collector current: 24A
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Features of semiconductor devices: high voltage
Pulsed collector current: 230A
Type of transistor: IGBT
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTK120N25P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 120A; 700W; TO264
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 700W
Gate charge: 185nC
Polarisation: unipolar
Technology: Polar™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 24mΩ
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTP120P065T |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO220AB
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXTQ120N20P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 22mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Reverse recovery time: 180ns
Mounting: THT
Power dissipation: 714W
Gate charge: 152nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 22mΩ
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTY1N120P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Reverse recovery time: 900ns
On-state resistance: 20Ω
Power dissipation: 63W
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| VBO25-12NO2 |
|
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Version: square
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 38A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: FO-A
Kind of package: bulk
Leads: connectors FASTON
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| GBO25-12NO1 |
|
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| VBO25-16AO2 |
|
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| GBO25-16NO1 |
|
Hersteller: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Version: flat
Case: GBFP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| VBO25-16NO2 |
|
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VBO25-12AO2 |
|
Hersteller: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Features of semiconductor devices: avalanche breakdown effect
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IXDD609PI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609CI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609YI |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 807 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609D2TR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IXDD609SITR |
|
Hersteller: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| PLB190 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 5kV
Turn-on time: 1ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 0.13A
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 5kV
Turn-on time: 1ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 0.13A
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| PLB190S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| PLB190STR |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CPC1965Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 260V AC
Case: SIP4
Max. operating current: 1A
Control current max.: 100mA
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1945Y |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Switched voltage: max. 120V AC
Case: SIP4
Max. operating current: 1A
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 0.34Ω
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Manufacturer series: OptoMOS
Relay variant: 1-phase
Kind of output: MOSFET
Body dimensions: 19.2x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switching method: zero voltage switching
Switched voltage: max. 120V AC
Case: SIP4
Max. operating current: 1A
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 0.34Ω
Type of relay: solid state
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| PD1201 |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP4
Max. operating current: 1A
Control current max.: 100mA
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1943G |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1943GS |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Mounting: SMT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 400V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| LCA210S |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPDT
Max. operating current: 85mA
Mounting: SMT
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 100mA
On-state resistance: 35Ω
Relay variant: 1-phase; current source
Kind of output: MOSFET
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| CPC1967J |
|
Hersteller: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 20ms
Switched voltage: max. 400V AC; max. 400V DC
Case: i4-pac
Max. operating current: 1350mA
Turn-off time: 5ms
Control current max.: 100mA
On-state resistance: 0.85Ω
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Produkt ist nicht verfügbar
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