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Technische Details IXTH240N15X4 IXYS
Description: MOSFET N-CH 150V 240A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V, Power Dissipation (Max): 940W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote IXTH240N15X4
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IXTH240N15X4 | Hersteller : IXYS |
 Description: MOSFET N-CH 150V 240A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V Power Dissipation (Max): 940W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
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IXTH240N15X4 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 940W Case: TO247-3 On-state resistance: 4.4mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns Features of semiconductor devices: ultra junction x-class |
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