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Technische Details IXXH30N65B4D1 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3, Type of transistor: IGBT, Technology: GenX4™; Trench; XPT™, Power dissipation: 230W, Case: TO247-3, Mounting: THT, Gate charge: 52nC, Kind of package: tube, Collector current: 30A, Collector-emitter voltage: 650V, Pulsed collector current: 146A, Turn-on time: 65ns, Turn-off time: 206ns, Gate-emitter voltage: ±20V.
Weitere Produktangebote IXXH30N65B4D1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXXH30N65B4D1 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 52nC Kind of package: tube Collector current: 30A Collector-emitter voltage: 650V Pulsed collector current: 146A Turn-on time: 65ns Turn-off time: 206ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXXH30N65B4D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 146A
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH