Technische Details IXFN55N50 IXYS
Description: MOSFET N-CH 500V 55A SOT-227B, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Part Status: Obsolete, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 8mA, Power Dissipation (Max): 625W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V.
Weitere Produktangebote IXFN55N50
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFN55N50 | Littelfuse Inc. |
  Description: MOSFET N-CH 500V 55A SOT-227BVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Part Status: Obsolete Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4.5V @ 8mA Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN55N50 | IXYS |
MOSFET Modules 55 Amps 500V 0.08 Rds |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IXFN55N50 | IXYS |
Category: Transistor drivers Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 55A Pulsed drain current: 220A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 80mΩ Gate charge: 330nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 250ns Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFN55N50 |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 500V 55A SOT-227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Part Status: Obsolete
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Description: MOSFET N-CH 500V 55A SOT-227B
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Part Status: Obsolete
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN55N50 |
|
Hersteller: IXYS
MOSFET Modules 55 Amps 500V 0.08 Rds
MOSFET Modules 55 Amps 500V 0.08 Rds
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFN55N50 |
|
Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor drivers
Description: Module; single transistor; 500V; 55A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 80mΩ
Gate charge: 330nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH