Technische Details MG12100S-BN2MM Littelfuse
Description: IGBT MODULE 1200V 140A 450W S3, Packaging: Bulk, Package / Case: S-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A (Typ), NTC Thermistor: No, Supplier Device Package: S3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 450 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V.
Weitere Produktangebote MG12100S-BN2MM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MG12100S-BN2MM | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 140A 450000mW 7-Pin Bulk |
Produkt ist nicht verfügbar |
|
| MG12100S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: package S Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
MG12100S-BN2MM | Hersteller : Littelfuse Inc. |
Description: IGBT MODULE 1200V 140A 450W S3 Packaging: Bulk Package / Case: S-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A (Typ) NTC Thermistor: No Supplier Device Package: S3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 450 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V |
Produkt ist nicht verfügbar |
|
| MG12100S-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: package S |
Produkt ist nicht verfügbar |