IXFK120N20P Ixys Corporation
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 17.91 EUR |
| 150+ | 16.09 EUR |
| 300+ | 14.64 EUR |
| 450+ | 13.43 EUR |
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Technische Details IXFK120N20P Ixys Corporation
Description: MOSFET N-CH 200V 120A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V, Power Dissipation (Max): 714W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXFK120N20P nach Preis ab 15.68 EUR bis 18.76 EUR
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IXFK120N20P | Hersteller : IXYS |
 MOSFETs 120 Amps 200V 0.022 Rds |
auf Bestellung 1758 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK120N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK120N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK120N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns Case: TO264 Mounting: THT Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Reverse recovery time: 100ns Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK120N20P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 120A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK120N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns Case: TO264 Mounting: THT Drain-source voltage: 200V Drain current: 120A On-state resistance: 22mΩ Type of transistor: N-MOSFET Reverse recovery time: 100ns Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |