IXFK120N25P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A TO264AA
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 700W (Tc)
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFK120N25P IXYS
Description: MOSFET N-CH 250V 120A TO264AA, Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-264AA (IXFK), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 700W (Tc).
Weitere Produktangebote IXFK120N25P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXFK120N25P | Hersteller : IXYS |
MOSFET 120 Amps 250V 0.024 Rds |
Produkt ist nicht verfügbar |
|
 |
IXFK120N25P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 185nC On-state resistance: 24mΩ Drain current: 120A Drain-source voltage: 250V Power dissipation: 700W Case: TO264 Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |