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DNA30E2200PZ-TRL DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30E2200PZ-TRL DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
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DLA5P800UC DLA5P800UC IXYS DLA5P800UC.pdf Description: DIODE ARRAY GP 800V 5A TO252
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS media?resourcetype=datasheets&itemid=9F345C5A-5DB2-4D23-A956-51BA9B085188&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3D1-Datasheet.PDF Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYH24N90C3D1 IXYH24N90C3D1 IXYS littelfuse-discrete-igbts-ixyh24n90c3d1-datasheet?assetguid=a4366edb-d41a-4719-b052-c6c82f879f83 Description: IGBT 900V 44A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH60N90C3 IXYH60N90C3 IXYS littelfuse_discrete_igbts_xpt_ixyh60n90c3_datasheet.pdf.pdf Description: IGBT 900V 140A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 30ns/87ns
Switching Energy: 2.7mJ (on), 1.55mJ (off)
Test Condition: 450V, 60A, 3Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 750 W
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IXYN80N90C3H1 IXYN80N90C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyn80n90c3h1_datasheet.pdf.pdf Description: IGBT MOD 900V 115A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V
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IXYY8N90C3 IXYY8N90C3 IXYS littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe Description: IGBT 900V 20A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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70+3.24 EUR
140+2.95 EUR
560+2.51 EUR
1050+2.35 EUR
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MMJX1H40N150 MMJX1H40N150 IXYS Littelfuse-Power-Semiconductors-MMJX1H40N150-Datasheet?assetguid=8177E2BD-744B-41AB-98A1-60D6E9993F18 Description: SCR 1.5KV 40A SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.787", 20.00mm Width), 15 Leads, Isolated Tab
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Voltage - Off State: 1.5 kV
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MMIX1H60N150V1 MMIX1H60N150V1 IXYS media?resourcetype=datasheets&itemid=c2eb9caa-b966-4fbd-a662-234ddc74b761&filename=Littelfuse-Power-Semiconductors-MMIX1H60N150V1-Datasheet Description: SCR 1.5KV 60A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: 24-SMPD
Voltage - Off State: 1.5 kV
auf Bestellung 768 Stücke:
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IXHH40N150HV IXHH40N150HV IXYS Littelfuse-Power-Semiconductors-IXHH40N150HV-Datasheet?assetguid=1d7bcfdb-8431-454b-82bd-963af9b0fa5f Description: SCR 1.5KV 40A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-247HV
Voltage - Off State: 1.5 kV
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IXHX40N150V1HV IXHX40N150V1HV IXYS Littelfuse-Power-Semiconductors-IXHX40N150V1HV-Datasheet?assetguid=6441d34d-64f5-4878-906c-789fb271fd7a Description: SCR 1.5KV TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-247PLUS-HV
Voltage - Off State: 1.5 kV
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IXBF20N360 IXBF20N360 IXYS Description: IGBT 3600V 45A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 230 W
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IXBL60N360 IXBL60N360 IXYS DS100577(IXBL60N360).pdf Description: IGBT 3600V 92A ISOPLUS I5PAK
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IXBF50N360 IXBF50N360 IXYS DS100623(IXBF50N360)_.pdf Description: IGBT 3600V 70A 290W I4-PAK
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IXBX50N360HV IXBX50N360HV IXYS Description: IGBT 3600V 125A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 46ns/205ns
Test Condition: 960V, 50A, 5Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 660 W
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CLA30MT1200NPZ-TRL CLA30MT1200NPZ-TRL IXYS media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet Description: TRIAC 1.2KV 33A TO263HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ-TRL IXYS CLA40MT1200NPZ.pdf Description: TRIAC 1.2KV 44A TO263HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
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CLA30MT1200NPZ-TRL CLA30MT1200NPZ-TRL IXYS media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet Description: TRIAC 1.2KV 33A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ-TRL IXYS CLA40MT1200NPZ.pdf Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
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CLA30MT1200NPB CLA30MT1200NPB IXYS CLA30MT1200NPB.pdf Description: THYRISTOR PHASE TO220
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CLA40MT1200NPB CLA40MT1200NPB IXYS CLA40MT1200NPB.pdf Description: THYRISTOR PHASE TO220
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CLA80MT1200NHB CLA80MT1200NHB IXYS media?resourcetype=datasheets&itemid=8fe23120-809a-4153-9e2c-c17d5b314175&filename=CLA80MT1200NHB Description: TRIAC 1.2KV 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
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30+9.7 EUR
120+8.39 EUR
510+8.37 EUR
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CLA80MT1200NHR CLA80MT1200NHR IXYS CLA80MT1200NHR.pdf Description: THYRISTOR PHASE ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
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DPG30C300PC DPG30C300PC IXYS DPG30C300PC.pdf Description: DIODE ARRAY GP 300V 15A TO263
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IXTH1N200P3 IXTH1N200P3 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n200p3_datasheet.pdf.pdf Description: MOSFET N-CH 2000V 1A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
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2+16.3 EUR
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120+8.14 EUR
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IXYP10N65C3D1 IXYP10N65C3D1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3D1-Datasheet.PDF Description: IGBT PT 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
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IXRFD631 IXRFD631 IXYS IXRFD631_Datasheet_RevA.pdf Description: IC MOSFET DVR RF 30A LOW DCB
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IXBH20N360HV IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Description: IGBT 3600V 70A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 430 W
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IXBT20N360HV IXBT20N360HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n360hv_datasheet.pdf.pdf Description: IGBT 3600V 70A TO-268HV
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SLPN005H10L IXYS SLPN005H10L.pdf Description: SOLARPN HI-EFF 223X143X2MM
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SLMD242H10L IXYS SLMD242H10L.pdf Description: SOLARMD HI-EFF 214.5X131.6X2MM
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SOLARADE SOLARADE IXYS SOLARADE_Brochure.PDF Description: BATT CHARGER SOLAR CHARGER 5V 1A
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IXTP20N65XM IXTP20N65XM IXYS Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65XM IXTP32N65XM IXYS Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2206 pF @ 25 V
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IXTP20N65X IXTP20N65X IXYS littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807 Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTH20N65X IXTH20N65X IXYS littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807 Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA20N65X IXTA20N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65X IXTP32N65X IXYS Description: MOSFET N-CH 650V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ32N65X IXTQ32N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH32N65X IXTH32N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH52N65X IXTH52N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH64N65X IXTH64N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth64n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 64A TO247
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IXTP2N65X2 IXTP2N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_2n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 67 Stücke:
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4+4.47 EUR
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IXTY4N65X2 IXTY4N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 3430 Stücke:
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4+4.59 EUR
70+2.57 EUR
140+2.33 EUR
560+2.05 EUR
1050+1.8 EUR
2030+1.73 EUR
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IXTP8N65X2 IXTP8N65X2 IXYS 650V_X-Class_MOSFETs_Product_Brief.pdf Description: MOSFET N-CH 650V 8A TO220
auf Bestellung 4200 Stücke:
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IXTY8N65X2 IXTY8N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1960 Stücke:
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4+5.44 EUR
70+2.74 EUR
140+2.53 EUR
560+2.28 EUR
1050+2.14 EUR
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IXFA3N120-TRL IXFA3N120-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA3N120-TRL IXFA3N120-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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IXYL60N450 IXYL60N450 IXYS Description: IGBT 4500V 90A ISOPLUSI5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
auf Bestellung 73 Stücke:
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1+187.04 EUR
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DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Description: DIODE RECTIFIER 1.2KV 50A TO247
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Description: DIODE RECT FAST 1.2KV 30A TO247
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DSA320A100NB IXYS Description: DIODE SCHOTTKY 100V 80A TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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DSA600A150NB IXYS Description: DIODE ARRAY SCHOTTKY 150V TO227
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FMM150-0075X2F FMM150-0075X2F IXYS DS100186-(FMM150-0075X2F).pdf Description: MOSFET 2N-CH 75V 120A I4-PAC-5
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IXA220I650NA IXYS IXA220I650NA.pdf Description: IGBT MODULE 650V SOT227
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DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
DNA30E2200PZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 3200 Stücke:
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Anzahl Preis
800+4 EUR
Mindestbestellmenge: 800
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DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
DNA30E2200PZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 3257 Stücke:
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Anzahl Preis
2+10.21 EUR
10+6.84 EUR
100+4.93 EUR
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DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
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DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Hersteller: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
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DLA5P800UC DLA5P800UC.pdf
DLA5P800UC
Hersteller: IXYS
Description: DIODE ARRAY GP 800V 5A TO252
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IXYA8N90C3D1 media?resourcetype=datasheets&itemid=9F345C5A-5DB2-4D23-A956-51BA9B085188&filename=Littelfuse-Discrete-IGBTs-XPT-IXY-8N90C3D1-Datasheet.PDF
IXYA8N90C3D1
Hersteller: IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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IXYH24N90C3D1 littelfuse-discrete-igbts-ixyh24n90c3d1-datasheet?assetguid=a4366edb-d41a-4719-b052-c6c82f879f83
IXYH24N90C3D1
Hersteller: IXYS
Description: IGBT 900V 44A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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IXYH60N90C3 littelfuse_discrete_igbts_xpt_ixyh60n90c3_datasheet.pdf.pdf
IXYH60N90C3
Hersteller: IXYS
Description: IGBT 900V 140A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 30ns/87ns
Switching Energy: 2.7mJ (on), 1.55mJ (off)
Test Condition: 450V, 60A, 3Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 750 W
auf Bestellung 334 Stücke:
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2+16.32 EUR
30+10.26 EUR
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IXYN80N90C3H1 littelfuse_discrete_igbts_xpt_ixyn80n90c3h1_datasheet.pdf.pdf
IXYN80N90C3H1
Hersteller: IXYS
Description: IGBT MOD 900V 115A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V
Produkt ist nicht verfügbar
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IXYY8N90C3 littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe
IXYY8N90C3
Hersteller: IXYS
Description: IGBT 900V 20A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
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3+6.64 EUR
70+3.24 EUR
140+2.95 EUR
560+2.51 EUR
1050+2.35 EUR
2030+2.3 EUR
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MMJX1H40N150 Littelfuse-Power-Semiconductors-MMJX1H40N150-Datasheet?assetguid=8177E2BD-744B-41AB-98A1-60D6E9993F18
MMJX1H40N150
Hersteller: IXYS
Description: SCR 1.5KV 40A SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.787", 20.00mm Width), 15 Leads, Isolated Tab
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Voltage - Off State: 1.5 kV
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MMIX1H60N150V1 media?resourcetype=datasheets&itemid=c2eb9caa-b966-4fbd-a662-234ddc74b761&filename=Littelfuse-Power-Semiconductors-MMIX1H60N150V1-Datasheet
MMIX1H60N150V1
Hersteller: IXYS
Description: SCR 1.5KV 60A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: 24-SMPD
Voltage - Off State: 1.5 kV
auf Bestellung 768 Stücke:
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1+98.38 EUR
20+72.76 EUR
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IXHH40N150HV Littelfuse-Power-Semiconductors-IXHH40N150HV-Datasheet?assetguid=1d7bcfdb-8431-454b-82bd-963af9b0fa5f
IXHH40N150HV
Hersteller: IXYS
Description: SCR 1.5KV 40A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-247HV
Voltage - Off State: 1.5 kV
Produkt ist nicht verfügbar
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IXHX40N150V1HV Littelfuse-Power-Semiconductors-IXHX40N150V1HV-Datasheet?assetguid=6441d34d-64f5-4878-906c-789fb271fd7a
IXHX40N150V1HV
Hersteller: IXYS
Description: SCR 1.5KV TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-247PLUS-HV
Voltage - Off State: 1.5 kV
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1+92.65 EUR
30+68.81 EUR
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IXBF20N360
IXBF20N360
Hersteller: IXYS
Description: IGBT 3600V 45A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 230 W
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IXBL60N360 DS100577(IXBL60N360).pdf
IXBL60N360
Hersteller: IXYS
Description: IGBT 3600V 92A ISOPLUS I5PAK
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IXBF50N360 DS100623(IXBF50N360)_.pdf
IXBF50N360
Hersteller: IXYS
Description: IGBT 3600V 70A 290W I4-PAK
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IXBX50N360HV
IXBX50N360HV
Hersteller: IXYS
Description: IGBT 3600V 125A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 46ns/205ns
Test Condition: 960V, 50A, 5Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 660 W
auf Bestellung 368 Stücke:
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Anzahl Preis
1+107.08 EUR
30+82.09 EUR
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CLA30MT1200NPZ-TRL media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet
CLA30MT1200NPZ-TRL
Hersteller: IXYS
Description: TRIAC 1.2KV 33A TO263HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
auf Bestellung 1062 Stücke:
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Anzahl Preis
2+11.9 EUR
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100+5.85 EUR
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ.pdf
CLA40MT1200NPZ-TRL
Hersteller: IXYS
Description: TRIAC 1.2KV 44A TO263HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CLA30MT1200NPZ-TRL media?resourcetype=datasheets&itemid=636eac5f-86db-4f80-a492-aa2746822f9d&filename=Littelfuse-Power-Semiconductors-CLA30MT1200NPZ-Datasheet
CLA30MT1200NPZ-TRL
Hersteller: IXYS
Description: TRIAC 1.2KV 33A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CLA40MT1200NPZ-TRL CLA40MT1200NPZ.pdf
CLA40MT1200NPZ-TRL
Hersteller: IXYS
Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CLA30MT1200NPB CLA30MT1200NPB.pdf
CLA30MT1200NPB
Hersteller: IXYS
Description: THYRISTOR PHASE TO220
Produkt ist nicht verfügbar
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CLA40MT1200NPB CLA40MT1200NPB.pdf
CLA40MT1200NPB
Hersteller: IXYS
Description: THYRISTOR PHASE TO220
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CLA80MT1200NHB media?resourcetype=datasheets&itemid=8fe23120-809a-4153-9e2c-c17d5b314175&filename=CLA80MT1200NHB
CLA80MT1200NHB
Hersteller: IXYS
Description: TRIAC 1.2KV 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
auf Bestellung 2656 Stücke:
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Anzahl Preis
2+15.47 EUR
30+9.7 EUR
120+8.39 EUR
510+8.37 EUR
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CLA80MT1200NHR CLA80MT1200NHR.pdf
CLA80MT1200NHR
Hersteller: IXYS
Description: THYRISTOR PHASE ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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DPG30C300PC DPG30C300PC.pdf
DPG30C300PC
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 15A TO263
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IXTH1N200P3 littelfuse_discrete_mosfets_n-channel_standard_ixt_1n200p3_datasheet.pdf.pdf
IXTH1N200P3
Hersteller: IXYS
Description: MOSFET N-CH 2000V 1A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
auf Bestellung 415 Stücke:
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Anzahl Preis
2+16.3 EUR
30+9.61 EUR
120+8.14 EUR
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IXYP10N65C3D1 Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3D1-Datasheet.PDF
IXYP10N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXRFD631 IXRFD631_Datasheet_RevA.pdf
IXRFD631
Hersteller: IXYS
Description: IC MOSFET DVR RF 30A LOW DCB
Produkt ist nicht verfügbar
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
IXBH20N360HV
Hersteller: IXYS
Description: IGBT 3600V 70A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 430 W
auf Bestellung 1641 Stücke:
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Anzahl Preis
1+184.92 EUR
30+158.85 EUR
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IXBT20N360HV littelfuse_discrete_igbts_bimosfet_ixb_20n360hv_datasheet.pdf.pdf
IXBT20N360HV
Hersteller: IXYS
Description: IGBT 3600V 70A TO-268HV
Produkt ist nicht verfügbar
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SLPN005H10L SLPN005H10L.pdf
Hersteller: IXYS
Description: SOLARPN HI-EFF 223X143X2MM
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SLMD242H10L SLMD242H10L.pdf
Hersteller: IXYS
Description: SOLARMD HI-EFF 214.5X131.6X2MM
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SOLARADE SOLARADE_Brochure.PDF
SOLARADE
Hersteller: IXYS
Description: BATT CHARGER SOLAR CHARGER 5V 1A
Produkt ist nicht verfügbar
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IXTP20N65XM
IXTP20N65XM
Hersteller: IXYS
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65XM
IXTP32N65XM
Hersteller: IXYS
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2206 pF @ 25 V
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IXTP20N65X littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807
IXTP20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTH20N65X littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807
IXTH20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTA20N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x_datasheet.pdf.pdf
IXTA20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65X
IXTP32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTQ32N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf
IXTQ32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH32N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf
IXTH32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH52N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf
IXTH52N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
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IXTH64N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth64n65x_datasheet.pdf.pdf
IXTH64N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 64A TO247
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IXTP2N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_2n65x2_datasheet.pdf.pdf
IXTP2N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 67 Stücke:
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Anzahl Preis
4+4.47 EUR
50+3.59 EUR
Mindestbestellmenge: 4
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IXTY4N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTY4N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 3430 Stücke:
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Anzahl Preis
4+4.59 EUR
70+2.57 EUR
140+2.33 EUR
560+2.05 EUR
1050+1.8 EUR
2030+1.73 EUR
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IXTP8N65X2 650V_X-Class_MOSFETs_Product_Brief.pdf
IXTP8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO220
auf Bestellung 4200 Stücke:
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IXTY8N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTY8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
70+2.74 EUR
140+2.53 EUR
560+2.28 EUR
1050+2.14 EUR
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IXFA3N120-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf
IXFA3N120-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXFA3N120-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf
IXFA3N120-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXYL60N450
IXYL60N450
Hersteller: IXYS
Description: IGBT 4500V 90A ISOPLUSI5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+187.04 EUR
25+160.32 EUR
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DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Hersteller: IXYS
Description: DIODE RECTIFIER 1.2KV 50A TO247
Produkt ist nicht verfügbar
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Description: DIODE RECT FAST 1.2KV 30A TO247
Produkt ist nicht verfügbar
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DSA320A100NB
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 80A TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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DSA600A150NB
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO227
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FMM150-0075X2F DS100186-(FMM150-0075X2F).pdf
FMM150-0075X2F
Hersteller: IXYS
Description: MOSFET 2N-CH 75V 120A I4-PAC-5
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.24 EUR
10+38.95 EUR
100+33.26 EUR
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IXA220I650NA IXA220I650NA.pdf
Hersteller: IXYS
Description: IGBT MODULE 650V SOT227
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