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IXA20PG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20PG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20RG1200DHGLB IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHGLB-TRR IXYS IXA20RG1200DHGLB.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA30PG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Bulk
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30PG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30RG1200DHGLB IXYS IXA30RG1200DHGLB.pdf Description: IGBT PHASELEG 1200V 30A SMPD
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IXA30RG1200DHGLB-TRR IXYS IXA30RG1200DHGLB.pdf Description: IGBT PHASELEG 1200V 43A SMPD
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IXA33IF1200HB IXA33IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa33if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 58A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 2.5mJ (on), 3mJ (off)
Test Condition: 600V, 25A, 39Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
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IXA37IF1200HJ IXA37IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa37if1200hj_datasheet.pdf.pdf Description: IGBT 1200V 58A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 195 W
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IXA40PF1200TDHGLB IXYS Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PF1200TDHGLB-TRR IXYS Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PG1200DHG-TUB IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40PG1200DHG-TRR IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TUB IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TRR IXYS IXA40PG1200DHGLB.pdf Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA45IF1200HB IXA45IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa45if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 78A 325W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 325 W
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IXA4I1200UC IXA4I1200UC IXYS IXA4I1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
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IXA4IF1200TC-TUB IXA4IF1200TC-TUB IXYS littelfuse_discrete_igbts_xpt_ixa4if1200tc_datasheet.pdf.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC IXA4IF1200UC IXYS IXA4IF1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
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IXA55I1200HJ IXA55I1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa55i1200hj_datasheet.pdf.pdf Description: IGBT PT 1200V 84A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
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IXA60IF1200NA IXA60IF1200NA IXYS littelfuse_discrete_igbts_xpt_ixa60if1200na_datasheet.pdf.pdf Description: IGBT MOD 1200V 88A 290W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 100 µA
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IXA70I1200NA IXA70I1200NA IXYS IXA70I1200NA.pdf Description: IGBT MOD 1200V 100A 350W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
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IXA90IF650NA IXYS Description: IGBT 650V 90A SOT-227B
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IXFA16N50P3 IXFA16N50P3 IXYS DS100456B(IXFA-FP-FH16N50P3).pdf Description: MOSFET N-CH 500V 16A TO-263AA
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IXFA5N50P3 IXFA5N50P3 IXYS DS100454B(IXFY-FA-FP5N50P3).pdf Description: MOSFET N-CH 500V 5A TO263
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IXFA7N60P3 IXFA7N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 7A TO263
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IXFA8N50P3 IXFA8N50P3 IXYS DS100455A(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-263AA
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IXFH34N50P3 IXFH34N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
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IXFH50N50P3 IXFH50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFL210N30P3 IXFL210N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFN210N30P3 IXFN210N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn210n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFP16N50P3 IXFP16N50P3 IXYS Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
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IXFP5N50P3 IXFP5N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IXFP8N50P3 IXFP8N50P3 IXYS DS100455B(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-220
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IXFQ34N50P3 IXFQ34N50P3 IXYS Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
auf Bestellung 272 Stücke:
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120+7.3 EUR
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IXFQ50N50P3 IXFQ50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFQ94N30P3 IXFQ94N30P3 IXYS Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
auf Bestellung 750 Stücke:
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1+19.47 EUR
30+12.56 EUR
120+11.3 EUR
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IXFT50N50P3 IXFT50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFX150N30P3 IXFX150N30P3 IXYS Description: MOSFET N-CH 300V 150A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFY5N50P3 IXFY5N50P3 IXYS DS100454B(IXFY-FA-FP5N50P3).pdf Description: MOSFET N-CH 500V 5A TO252
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IXFZ140N25T IXFZ140N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfz140n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 100A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 445W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA30N60C3D4 IXGA30N60C3D4 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d4_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO263
Produkt ist nicht verfügbar
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IXTA15N50L2 IXTA15N50L2 IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 800 Stücke:
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1+22.77 EUR
50+15.11 EUR
100+15.09 EUR
500+12.28 EUR
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IXTT10N100D2 IXTT10N100D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
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IXTT12N140 IXTT12N140 IXYS IXTH_TT12N140.pdf Description: MOSFET N-CH 1400V 12A TO268
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS DS100333CIXXH30N60C3D1.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
auf Bestellung 170 Stücke:
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2+13.27 EUR
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IXXK300N60B3 IXXK300N60B3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60b3_datasheet.pdf.pdf Description: IGBT 600V 550A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
auf Bestellung 12 Stücke:
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1+50.09 EUR
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IXXK300N60C3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf Description: IGBT 600V 510A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXXN200N60B3 IXXN200N60B3 IXYS DS100453AIXXN200N60B3.pdf Description: IGBT MOD 600V 280A 940W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
auf Bestellung 151 Stücke:
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IXXN200N60B3H1 IXXN200N60B3H1 IXYS Description: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
Produkt ist nicht verfügbar
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IXXN200N60C3H1 IXXN200N60C3H1 IXYS Description: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
Produkt ist nicht verfügbar
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IXXX100N60B3H1 IXXX100N60B3H1 IXYS littelfuse_discrete_igbts_xpt_ixx_100n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
Produkt ist nicht verfügbar
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IXXX300N60B3 IXXX300N60B3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60b3_datasheet.pdf.pdf Description: IGBT PT 600V 550A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Part Status: Active
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.03 EUR
30+44.79 EUR
120+42 EUR
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IXXX300N60C3 IXXX300N60C3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf Description: IGBT 600V 510A 2300W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXYH40N90C3 IXYH40N90C3 IXYS littelfuse-discrete-igbts-ixyh40n90c3-datasheet?assetguid=fe48ad26-bbbf-4043-a308-25a997ad2b39 Description: IGBT 900V 105A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXYT80N90C3 IXYT80N90C3 IXYS littelfuse_discrete_igbts_xpt_ixy_80n90c3_datasheet.pdf.pdf Description: IGBT 900V 165A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
Produkt ist nicht verfügbar
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IXYX140N90C3 IXYX140N90C3 IXYS littelfuse_discrete_igbts_xpt_ixy_140n90c3_datasheet.pdf.pdf Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
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MCC224-24io1 IXYS MCC224-24io1.pdf Description: MOD THYRISTOR DUAL 24KV
Produkt ist nicht verfügbar
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MCC501-12IO2 IXYS m501-12io2-18io2.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXA20PG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
Produkt ist nicht verfügbar
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IXA20PG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20pg1200dhglb_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 32A SMPD
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IXA20RG1200DHGLB IXA20RG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHGLB-TRR IXA20RG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA30PG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Bulk
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
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IXA30PG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa30pg1200dhglb_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 43A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS-SMPD™.B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 2.1 mA
Produkt ist nicht verfügbar
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IXA30RG1200DHGLB IXA30RG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT PHASELEG 1200V 30A SMPD
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IXA30RG1200DHGLB-TRR IXA30RG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT PHASELEG 1200V 43A SMPD
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IXA33IF1200HB littelfuse_discrete_igbts_xpt_ixa33if1200hb_datasheet.pdf.pdf
IXA33IF1200HB
Hersteller: IXYS
Description: IGBT 1200V 58A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 2.5mJ (on), 3mJ (off)
Test Condition: 600V, 25A, 39Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.29 EUR
30+11.98 EUR
Mindestbestellmenge: 2
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IXA37IF1200HJ littelfuse_discrete_igbts_xpt_ixa37if1200hj_datasheet.pdf.pdf
IXA37IF1200HJ
Hersteller: IXYS
Description: IGBT 1200V 58A 195W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 195 W
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IXA40PF1200TDHGLB
Hersteller: IXYS
Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PF1200TDHGLB-TRR
Hersteller: IXYS
Description: IGBT PHASELEG 1200V 40A SMPD
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IXA40PG1200DHG-TUB IXA40PG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40PG1200DHG-TRR IXA40PG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TUB IXA40PG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA40RG1200DHG-TRR IXA40PG1200DHGLB.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1200V 63A SMPD
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IXA45IF1200HB littelfuse_discrete_igbts_xpt_ixa45if1200hb_datasheet.pdf.pdf
IXA45IF1200HB
Hersteller: IXYS
Description: IGBT 1200V 78A 325W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Test Condition: 600V, 35A, 27Ohm, 15V
Gate Charge: 106 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 325 W
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.96 EUR
10+17.11 EUR
100+14.26 EUR
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IXA4I1200UC IXA4I1200UC.pdf
IXA4I1200UC
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Produkt ist nicht verfügbar
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IXA4IF1200TC-TUB littelfuse_discrete_igbts_xpt_ixa4if1200tc_datasheet.pdf.pdf
IXA4IF1200TC-TUB
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC IXA4IF1200UC.pdf
IXA4IF1200UC
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Produkt ist nicht verfügbar
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IXA55I1200HJ littelfuse_discrete_igbts_xpt_ixa55i1200hj_datasheet.pdf.pdf
IXA55I1200HJ
Hersteller: IXYS
Description: IGBT PT 1200V 84A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Part Status: Active
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.78 EUR
30+22.6 EUR
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IXA60IF1200NA littelfuse_discrete_igbts_xpt_ixa60if1200na_datasheet.pdf.pdf
IXA60IF1200NA
Hersteller: IXYS
Description: IGBT MOD 1200V 88A 290W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 25 Stücke:
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Anzahl Preis
1+72.72 EUR
10+54.52 EUR
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IXA70I1200NA IXA70I1200NA.pdf
IXA70I1200NA
Hersteller: IXYS
Description: IGBT MOD 1200V 100A 350W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Produkt ist nicht verfügbar
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IXA90IF650NA
Hersteller: IXYS
Description: IGBT 650V 90A SOT-227B
Produkt ist nicht verfügbar
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IXFA16N50P3 DS100456B(IXFA-FP-FH16N50P3).pdf
IXFA16N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO-263AA
Produkt ist nicht verfügbar
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IXFA5N50P3 DS100454B(IXFY-FA-FP5N50P3).pdf
IXFA5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO263
Produkt ist nicht verfügbar
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IXFA7N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf
IXFA7N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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IXFA8N50P3 DS100455A(IXFA-FP8N50P3).pdf
IXFA8N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-263AA
Produkt ist nicht verfügbar
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IXFH34N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n50p3_datasheet.pdf.pdf
IXFH34N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFH50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFL210N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf
IXFL210N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN210N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn210n30p3_datasheet.pdf.pdf
IXFN210N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP16N50P3
IXFP16N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP5N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf
IXFP5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP8N50P3 DS100455B(IXFA-FP8N50P3).pdf
IXFP8N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-220
Produkt ist nicht verfügbar
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IXFQ34N50P3
IXFQ34N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.66 EUR
30+8.62 EUR
120+7.3 EUR
Mindestbestellmenge: 2
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IXFQ50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFQ50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ94N30P3
IXFQ94N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.47 EUR
30+12.56 EUR
120+11.3 EUR
510+11.09 EUR
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IXFT50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFT50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX150N30P3
IXFX150N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 150A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFY5N50P3 DS100454B(IXFY-FA-FP5N50P3).pdf
IXFY5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO252
Produkt ist nicht verfügbar
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IXFZ140N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfz140n25t_datasheet.pdf.pdf
IXFZ140N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 100A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 445W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA30N60C3D4 littelfuse_discrete_igbts_pt_ixg_30n60c3d4_datasheet.pdf.pdf
IXGA30N60C3D4
Hersteller: IXYS
Description: IGBT 600V 60A 220W TO263
Produkt ist nicht verfügbar
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IXTA15N50L2 littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.77 EUR
50+15.11 EUR
100+15.09 EUR
500+12.28 EUR
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IXTT10N100D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100_datasheet.pdf.pdf
IXTT10N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT12N140 IXTH_TT12N140.pdf
IXTT12N140
Hersteller: IXYS
Description: MOSFET N-CH 1400V 12A TO268
Produkt ist nicht verfügbar
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IXXH30N60C3D1 DS100333CIXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.27 EUR
30+7.77 EUR
120+6.56 EUR
Mindestbestellmenge: 2
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IXXK300N60B3 littelfuse_discrete_igbts_xpt_ixx_300n60b3_datasheet.pdf.pdf
IXXK300N60B3
Hersteller: IXYS
Description: IGBT 600V 550A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.09 EUR
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IXXK300N60C3 littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 600V 510A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXXN200N60B3 DS100453AIXXN200N60B3.pdf
IXXN200N60B3
Hersteller: IXYS
Description: IGBT MOD 600V 280A 940W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.56 EUR
10+31.9 EUR
100+27.24 EUR
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IXXN200N60B3H1
IXXN200N60B3H1
Hersteller: IXYS
Description: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
Produkt ist nicht verfügbar
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IXXN200N60C3H1
IXXN200N60C3H1
Hersteller: IXYS
Description: IGBT MOD 600V 200A 780W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
Produkt ist nicht verfügbar
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IXXX100N60B3H1 littelfuse_discrete_igbts_xpt_ixx_100n60b3h1_datasheet.pdf.pdf
IXXX100N60B3H1
Hersteller: IXYS
Description: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
Produkt ist nicht verfügbar
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IXXX300N60B3 littelfuse_discrete_igbts_xpt_ixx_300n60b3_datasheet.pdf.pdf
IXXX300N60B3
Hersteller: IXYS
Description: IGBT PT 600V 550A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Part Status: Active
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.03 EUR
30+44.79 EUR
120+42 EUR
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IXXX300N60C3 littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf
IXXX300N60C3
Hersteller: IXYS
Description: IGBT 600V 510A 2300W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXYH40N90C3 littelfuse-discrete-igbts-ixyh40n90c3-datasheet?assetguid=fe48ad26-bbbf-4043-a308-25a997ad2b39
IXYH40N90C3
Hersteller: IXYS
Description: IGBT 900V 105A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXYT80N90C3 littelfuse_discrete_igbts_xpt_ixy_80n90c3_datasheet.pdf.pdf
IXYT80N90C3
Hersteller: IXYS
Description: IGBT 900V 165A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
Produkt ist nicht verfügbar
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IXYX140N90C3 littelfuse_discrete_igbts_xpt_ixy_140n90c3_datasheet.pdf.pdf
IXYX140N90C3
Hersteller: IXYS
Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
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MCC224-24io1 MCC224-24io1.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 24KV
Produkt ist nicht verfügbar
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MCC501-12IO2 m501-12io2-18io2.pdf
Hersteller: IXYS
Description: SCR MODULE 1.2KV MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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