auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.37 EUR |
10+ | 25.89 EUR |
25+ | 24.48 EUR |
50+ | 24.11 EUR |
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Technische Details IXXK110N65B4H1 IXYS
Description: IGBT 650V 240A 880W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: TO-264 (IXXK), IGBT Type: PT, Td (on/off) @ 25°C: 38ns/156ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 630 A, Power - Max: 880 W.
Weitere Produktangebote IXXK110N65B4H1 nach Preis ab 22.54 EUR bis 29.59 EUR
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IXXK110N65B4H1 | Hersteller : IXYS |
Description: IGBT 650V 240A 880W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 630 A Power - Max: 880 W |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXK110N65B4H1 | Hersteller : Littelfuse | Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) TO-264AA |
Produkt ist nicht verfügbar |
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IXXK110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXK110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 110A Power dissipation: 880W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 570A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns |
Produkt ist nicht verfügbar |