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IXA90IF650NA IXYS Description: IGBT 650V 90A SOT-227B
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IXFA16N50P3 IXFA16N50P3 IXYS media?resourcetype=datasheets&itemid=C099D5AD-4C9C-4F25-857B-CB83C46942EB&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P3-Datasheet.PDF Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
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IXFA16N60P3 IXFA16N60P3 IXYS media?resourcetype=datasheets&itemid=CF4AB893-9810-4DEC-B1F0-79C39F033EC6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N60P3-Datasheet.PDF Description: MOSFET N-CH 600V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA26N50P3 IXFA26N50P3 IXYS media?resourcetype=datasheets&itemid=A8B0D040-1523-4949-9CF7-D162B9EED257&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-26N50P3-Datasheet.PDF Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
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IXFA5N50P3 IXFA5N50P3 IXYS DS100454B(IXFY-FA-FP5N50P3).pdf Description: MOSFET N-CH 500V 5A TO263
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IXFA7N60P3 IXFA7N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 7A TO263
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IXFA8N50P3 IXFA8N50P3 IXYS DS100455A(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-263AA
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IXFH150N17T2 IXFH150N17T2 IXYS DS100229IXFHT150N17T2.pdf Description: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
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IXFH16N50P3 IXFH16N50P3 IXYS littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
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120+8.2 EUR
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IXFH34N50P3 IXFH34N50P3 IXYS DS100411CIXFQFH34N50P3.pdf Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
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IXFK120N30P3 IXFK120N30P3 IXYS littelfuse-discrete-mosfets-ixf-120n30p3-datasheet?assetguid=2c3cbe34-d269-4b27-ab84-6ad8c5b0800e Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
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IXFL210N30P3 IXFL210N30P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFN210N30P3 IXFN210N30P3 IXYS littelfuse-discrete-mosfets-ixfn210n30p3-datasheet?assetguid=ea95238f-f12e-4f01-a0cb-121dd942c6bc Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
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IXFP16N50P3 IXFP16N50P3 IXYS littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
auf Bestellung 950 Stücke:
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50+7.32 EUR
100+6.7 EUR
500+5.63 EUR
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IXFP5N50P3 IXFP5N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IXFP8N50P3 IXFP8N50P3 IXYS DS100455B(IXFA-FP8N50P3).pdf Description: MOSFET N-CH 500V 8A TO-220
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IXFQ26N50P3 IXFQ26N50P3 IXYS 171448825littelfusediscretemosfetsnchannelhiperfetsix.pdf Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ34N50P3 IXFQ34N50P3 IXYS Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
auf Bestellung 272 Stücke:
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IXFQ50N50P3 IXFQ50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFQ94N30P3 IXFQ94N30P3 IXYS littelfuse-discrete-mosfets-ixf-94n30p3-datasheet?assetguid=1c2cbca8-18e8-479e-a630-47553c9a3855 Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IXFT50N50P3 IXFT50N50P3 IXYS littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd Description: MOSFET N-CH 500V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
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IXFX150N30P3 IXFX150N30P3 IXYS Description: MOSFET N-CH 300V 150A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V
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IXFY5N50P3 IXFY5N50P3 IXYS DS100454B(IXFY-FA-FP5N50P3).pdf Description: MOSFET N-CH 500V 5A TO252
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IXFZ140N25T IXYS Description: MOSFET N-CH 250V 100A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 445W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA30N60C3D4 IXGA30N60C3D4 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d4_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO263
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IXTA15N50L2 IXTA15N50L2 IXYS littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1 Description: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 647 Stücke:
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50+15.9 EUR
100+14.79 EUR
500+14.36 EUR
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IXTT10N100D2 IXTT10N100D2 IXYS littelfuse-discrete-mosfets-n-channel-depletion-mode-ixt-10n100-datasheet?assetguid=5e358144-35f5-4d3b-b405-1eaa211abc28 Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
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IXTT12N140 IXTT12N140 IXYS IXTH_TT12N140.pdf Description: MOSFET N-CH 1400V 12A TO268
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS DS100333CIXXH30N60C3D1.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXXK300N60B3 IXXK300N60B3 IXYS DS100503IXXKX300N60B3.pdf Description: IGBT PT 600V 550A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
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IXXK300N60C3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf Description: IGBT 600V 510A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
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IXXN200N60B3 IXXN200N60B3 IXYS DS100453AIXXN200N60B3.pdf Description: IGBT MOD 600V 280A 940W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
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IXXN200N60B3H1 IXXN200N60B3H1 IXYS DS100471AIXXN200N60B3H1.pdf Description: IGBT MOD 600V 200A 780W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
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IXXN200N60C3H1 IXXN200N60C3H1 IXYS media?resourcetype=datasheets&itemid=9601C093-7BCF-4C4D-AD74-711D68A77E29&filename=Littelfuse-Discrete-IGBTs-XPT-IXXN200N60C3H1-Datasheet.PDF Description: IGBT MOD 600V 200A 780W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
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IXXX100N60B3H1 IXXX100N60B3H1 IXYS littelfuse_discrete_igbts_xpt_ixx_100n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
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IXXX300N60B3 IXXX300N60B3 IXYS DS100503IXXKX300N60B3.pdf Description: IGBT PT 600V 550A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Part Status: Active
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
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IXXX300N60C3 IXXX300N60C3 IXYS littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf Description: IGBT 600V 510A 2300W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
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IXYH40N90C3 IXYH40N90C3 IXYS littelfuse-discrete-igbts-ixyh40n90c3-datasheet?assetguid=fe48ad26-bbbf-4043-a308-25a997ad2b39 Description: IGBT 900V 105A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXYT80N90C3 IXYT80N90C3 IXYS 238_DS100446BIXYTYH80N90C3.pdf Description: IGBT 900V 165A TO-268AA
Current - Collector (Ic) (Max): 165 A
Gate Charge: 145 nC
Test Condition: 450V, 80A, 2Ohm, 15V
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 34ns/90ns
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 830 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 900 V
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IXYX140N90C3 IXYX140N90C3 IXYS DS100450BIXYKX140N90C3.pdf Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
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MCC224-24io1 IXYS MCC224-24io1.pdf Description: MOD THYRISTOR DUAL 24KV
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MCC501-12IO2 IXYS m501-12io2-18io2.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.2 kV
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MCC501-14IO2 IXYS m501-12io2-18io2.pdf Description: MOD THYRISTOR DUAL 14KV
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MCC94-24io1B MCC94-24io1B IXYS Littelfuse-Power-Semiconductors-MCC94-24io1B-Datasheet?assetguid=0fc6f237-c12f-4dca-a18d-d8f26a6e59f3 Description: SCR MODULE 2.4KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 2.4 kV
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MCD501-16IO2 IXYS m501-12io2-18io2.pdf Description: MOD THYRISTOR DUAL 1.6KV
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1.6 kV
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MCD501-18IO2 IXYS m501-12io2-18io2.pdf Description: MOD THYRISTOR DUAL 18KV
Voltage - Off State: 1.8 kV
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
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MCK200-18io1 IXYS Description: MOD THYRISTOR DUAL 18KV
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MCMA110P1200TA MCMA110P1200TA IXYS Littelfuse-Power-Semiconductors-MCMA110P1200TA-Datasheet?assetguid=003BFC6D-6267-42FB-9FA2-7D09D9026911 Description: SCR MODULE 1.2KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.2 kV
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MCMA110P1600TA MCMA110P1600TA IXYS Littelfuse-Power-Semiconductors-MCMA110P1600TA-Datasheet?assetguid=A7FB5F81-CFF4-4B3A-91D3-8ABE12551D67 Description: SCR MODULE 1.6KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
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MCMA110PD1200TB MCMA110PD1200TB IXYS Littelfuse-Power-Semiconductors-MCMA110PD1200TB-Datasheet?assetguid=CAD61003-52EC-41C5-B7F8-30ECB8AE2B7D Description: SCR MODULE 1.2KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.2 kV
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MCMA110PD1600TB MCMA110PD1600TB IXYS Littelfuse-Power-Semiconductors-MCMA110PD1600TB-Datasheet?assetguid=EB12B8EB-C536-407D-8A29-44D15DB298CD Description: SCR MODULE 1.6KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCMA120UJ1800ED IXYS MCMA120UJ1800ED.pdf Description: MOD THYRISTOR DUAL 16KV E2-PACK
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MCMA140P1200TA MCMA140P1200TA IXYS Littelfuse-Power-Semiconductors-MCMA140P1200TA-Datasheet?assetguid=45D2C86C-27FB-4B2A-B75B-F9EC81FECBCF Description: SCR MODULE 1.2KV 220A TO-240AA
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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1+93.72 EUR
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MCMA140P1400TA MCMA140P1400TA IXYS Littelfuse-Power-Semiconductors-MCMA140P1400TA-Datasheet?assetguid=4CF182FE-980D-4408-A3D8-11858F29D6A3 Description: SCR MODULE 1.4KV 220A TO-240AA
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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MCMA140P1600TA MCMA140P1600TA IXYS Littelfuse-Power-Semiconductors-MCMA140P1600TA-Datasheet?assetguid=AA9E9258-C000-404A-B846-DEDA7C30E4F3 Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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1+98.69 EUR
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MCMA140P1800TA MCMA140P1800TA IXYS Littelfuse-Power-Semiconductors-MCMA140P1800TA-Datasheet?assetguid=AEAB0514-AB1F-433A-9619-9C062DA05F8E Description: SCR MODULE 1.8KV 220A TO-240AA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
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MCMA140PD1200TB MCMA140PD1200TB IXYS Littelfuse-Power-Semiconductors-MCMA140PD1200TB-Datasheet?assetguid=5EFC2DEE-5598-4B2A-99E5-F5A3494A5D06 Description: SCR MODULE 1.2KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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MCMA140PD1600TB MCMA140PD1600TB IXYS Littelfuse-Power-Semiconductors-MCMA140PD1600TB-Datasheet?assetguid=249D1984-7EAF-4D69-9FD2-55929BC0AF7E Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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1+75.9 EUR
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MCMA200P1600SA IXYS MCMA200P1600SA.pdf Description: MOD THYRISTOR DUAL 16KV
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MCMA200PD1600SA IXYS MCMA200PD1600SA.pdf Description: MOD THYRISTOR DUAL 16KV
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IXA90IF650NA
Hersteller: IXYS
Description: IGBT 650V 90A SOT-227B
Produkt ist nicht verfügbar
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IXFA16N50P3 media?resourcetype=datasheets&itemid=C099D5AD-4C9C-4F25-857B-CB83C46942EB&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P3-Datasheet.PDF
IXFA16N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA16N60P3 media?resourcetype=datasheets&itemid=CF4AB893-9810-4DEC-B1F0-79C39F033EC6&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N60P3-Datasheet.PDF
IXFA16N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 8A, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA26N50P3 media?resourcetype=datasheets&itemid=A8B0D040-1523-4949-9CF7-D162B9EED257&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-26N50P3-Datasheet.PDF
IXFA26N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA5N50P3 DS100454B(IXFY-FA-FP5N50P3).pdf
IXFA5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO263
Produkt ist nicht verfügbar
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IXFA7N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_7n60p3_datasheet.pdf.pdf
IXFA7N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 7A TO263
Produkt ist nicht verfügbar
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IXFA8N50P3 DS100455A(IXFA-FP8N50P3).pdf
IXFA8N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-263AA
Produkt ist nicht verfügbar
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IXFH150N17T2 DS100229IXFHT150N17T2.pdf
IXFH150N17T2
Hersteller: IXYS
Description: MOSFET N-CH 175V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 175 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
auf Bestellung 17 Stücke:
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AnzahlPrivatkunde
2+19.75 EUR
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IXFH16N50P3 littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb
IXFH16N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
auf Bestellung 723 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.65 EUR
30+9.72 EUR
120+8.2 EUR
510+7.08 EUR
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IXFH34N50P3 DS100411CIXFQFH34N50P3.pdf
IXFH34N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 34A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
Produkt ist nicht verfügbar
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IXFK120N30P3 littelfuse-discrete-mosfets-ixf-120n30p3-datasheet?assetguid=2c3cbe34-d269-4b27-ab84-6ad8c5b0800e
IXFK120N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8630 pF @ 25 V
Produkt ist nicht verfügbar
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IXFL210N30P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl210n30p3_datasheet.pdf.pdf
IXFL210N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 108A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN210N30P3 littelfuse-discrete-mosfets-ixfn210n30p3-datasheet?assetguid=ea95238f-f12e-4f01-a0cb-121dd942c6bc
IXFN210N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 192A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
Power Dissipation (Max): 1500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP16N50P3 littelfuse-discrete-mosfets-ixf-16n50p3-datasheet?assetguid=c099d5ad-4c9c-4f25-857b-cb83c46942eb
IXFP16N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 8A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.66 EUR
50+7.32 EUR
100+6.7 EUR
500+5.63 EUR
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IXFP5N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_5n50p3_datasheet.pdf.pdf
IXFP5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP8N50P3 DS100455B(IXFA-FP8N50P3).pdf
IXFP8N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO-220
Produkt ist nicht verfügbar
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IXFQ26N50P3 171448825littelfusediscretemosfetsnchannelhiperfetsix.pdf
IXFQ26N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ34N50P3
IXFQ34N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.45 EUR
30+10.26 EUR
120+8.69 EUR
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IXFQ50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFQ50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ94N30P3 littelfuse-discrete-mosfets-ixf-94n30p3-datasheet?assetguid=1c2cbca8-18e8-479e-a630-47553c9a3855
IXFQ94N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.86 EUR
30+17.65 EUR
120+15.2 EUR
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IXFT50N50P3 littelfuse-discrete-mosfets-ixf-50n50p3-datasheet?assetguid=9f18c4f6-a40a-4871-ba8b-9eaf25daedcd
IXFT50N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 25A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 4335 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX150N30P3
IXFX150N30P3
Hersteller: IXYS
Description: MOSFET N-CH 300V 150A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFY5N50P3 DS100454B(IXFY-FA-FP5N50P3).pdf
IXFY5N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 5A TO252
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IXFZ140N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 100A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 445W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA30N60C3D4 littelfuse_discrete_igbts_pt_ixg_30n60c3d4_datasheet.pdf.pdf
IXGA30N60C3D4
Hersteller: IXYS
Description: IGBT 600V 60A 220W TO263
Produkt ist nicht verfügbar
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IXTA15N50L2 littelfuse-discrete-mosfets-ixt-15n50-datasheet?assetguid=e0766732-683f-41fb-b1d7-3cf72c201de1
IXTA15N50L2
Hersteller: IXYS
Description: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 647 Stücke:
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1+27.48 EUR
50+15.9 EUR
100+14.79 EUR
500+14.36 EUR
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IXTT10N100D2 littelfuse-discrete-mosfets-n-channel-depletion-mode-ixt-10n100-datasheet?assetguid=5e358144-35f5-4d3b-b405-1eaa211abc28
IXTT10N100D2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT12N140 IXTH_TT12N140.pdf
IXTT12N140
Hersteller: IXYS
Description: MOSFET N-CH 1400V 12A TO268
Produkt ist nicht verfügbar
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IXXH30N60C3D1 DS100333CIXXH30N60C3D1.pdf
IXXH30N60C3D1
Hersteller: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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2+15.54 EUR
30+9.01 EUR
120+7.58 EUR
510+6.53 EUR
1020+6.27 EUR
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IXXK300N60B3 DS100503IXXKX300N60B3.pdf
IXXK300N60B3
Hersteller: IXYS
Description: IGBT PT 600V 550A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
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IXXK300N60C3 littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 600V 510A 2300W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXXN200N60B3 DS100453AIXXN200N60B3.pdf
IXXN200N60B3
Hersteller: IXYS
Description: IGBT MOD 600V 280A 940W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
auf Bestellung 143 Stücke:
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1+61.65 EUR
10+45.46 EUR
100+37.44 EUR
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IXXN200N60B3H1 DS100471AIXXN200N60B3H1.pdf
IXXN200N60B3H1
Hersteller: IXYS
Description: IGBT MOD 600V 200A 780W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
Produkt ist nicht verfügbar
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IXXN200N60C3H1 media?resourcetype=datasheets&itemid=9601C093-7BCF-4C4D-AD74-711D68A77E29&filename=Littelfuse-Discrete-IGBTs-XPT-IXXN200N60C3H1-Datasheet.PDF
IXXN200N60C3H1
Hersteller: IXYS
Description: IGBT MOD 600V 200A 780W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V
Produkt ist nicht verfügbar
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IXXX100N60B3H1 littelfuse_discrete_igbts_xpt_ixx_100n60b3h1_datasheet.pdf.pdf
IXXX100N60B3H1
Hersteller: IXYS
Description: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
Produkt ist nicht verfügbar
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IXXX300N60B3 DS100503IXXKX300N60B3.pdf
IXXX300N60B3
Hersteller: IXYS
Description: IGBT PT 600V 550A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 3.45mJ (on), 2.86mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 460 nC
Part Status: Active
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1140 A
Power - Max: 2300 W
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IXXX300N60C3 littelfuse_discrete_igbts_xpt_ixx_300n60c3_datasheet.pdf.pdf
IXXX300N60C3
Hersteller: IXYS
Description: IGBT 600V 510A 2300W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 3.35mJ (on), 1.9mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 438 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1075 A
Power - Max: 2300 W
Produkt ist nicht verfügbar
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IXYH40N90C3 littelfuse-discrete-igbts-ixyh40n90c3-datasheet?assetguid=fe48ad26-bbbf-4043-a308-25a997ad2b39
IXYH40N90C3
Hersteller: IXYS
Description: IGBT 900V 105A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXYT80N90C3 238_DS100446BIXYTYH80N90C3.pdf
IXYT80N90C3
Hersteller: IXYS
Description: IGBT 900V 165A TO-268AA
Current - Collector (Ic) (Max): 165 A
Gate Charge: 145 nC
Test Condition: 450V, 80A, 2Ohm, 15V
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 34ns/90ns
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 830 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Produkt ist nicht verfügbar
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IXYX140N90C3 DS100450BIXYKX140N90C3.pdf
IXYX140N90C3
Hersteller: IXYS
Description: IGBT 900V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
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MCC224-24io1 MCC224-24io1.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 24KV
Produkt ist nicht verfügbar
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MCC501-12IO2 m501-12io2-18io2.pdf
Hersteller: IXYS
Description: SCR MODULE 1.2KV MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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MCC501-14IO2 m501-12io2-18io2.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 14KV
Produkt ist nicht verfügbar
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MCC94-24io1B Littelfuse-Power-Semiconductors-MCC94-24io1B-Datasheet?assetguid=0fc6f237-c12f-4dca-a18d-d8f26a6e59f3
MCC94-24io1B
Hersteller: IXYS
Description: SCR MODULE 2.4KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 2.4 kV
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MCD501-16IO2 m501-12io2-18io2.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1.6KV
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1.6 kV
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MCD501-18IO2 m501-12io2-18io2.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 18KV
Voltage - Off State: 1.8 kV
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
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MCK200-18io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 18KV
Produkt ist nicht verfügbar
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MCMA110P1200TA Littelfuse-Power-Semiconductors-MCMA110P1200TA-Datasheet?assetguid=003BFC6D-6267-42FB-9FA2-7D09D9026911
MCMA110P1200TA
Hersteller: IXYS
Description: SCR MODULE 1.2KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.2 kV
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1+84.72 EUR
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MCMA110P1600TA Littelfuse-Power-Semiconductors-MCMA110P1600TA-Datasheet?assetguid=A7FB5F81-CFF4-4B3A-91D3-8ABE12551D67
MCMA110P1600TA
Hersteller: IXYS
Description: SCR MODULE 1.6KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
auf Bestellung 78 Stücke:
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AnzahlPrivatkunde
1+72.2 EUR
36+49.1 EUR
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MCMA110PD1200TB Littelfuse-Power-Semiconductors-MCMA110PD1200TB-Datasheet?assetguid=CAD61003-52EC-41C5-B7F8-30ECB8AE2B7D
MCMA110PD1200TB
Hersteller: IXYS
Description: SCR MODULE 1.2KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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MCMA110PD1600TB Littelfuse-Power-Semiconductors-MCMA110PD1600TB-Datasheet?assetguid=EB12B8EB-C536-407D-8A29-44D15DB298CD
MCMA110PD1600TB
Hersteller: IXYS
Description: SCR MODULE 1.6KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCMA120UJ1800ED MCMA120UJ1800ED.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 16KV E2-PACK
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MCMA140P1200TA Littelfuse-Power-Semiconductors-MCMA140P1200TA-Datasheet?assetguid=45D2C86C-27FB-4B2A-B75B-F9EC81FECBCF
MCMA140P1200TA
Hersteller: IXYS
Description: SCR MODULE 1.2KV 220A TO-240AA
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+93.72 EUR
36+63.26 EUR
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MCMA140P1400TA Littelfuse-Power-Semiconductors-MCMA140P1400TA-Datasheet?assetguid=4CF182FE-980D-4408-A3D8-11858F29D6A3
MCMA140P1400TA
Hersteller: IXYS
Description: SCR MODULE 1.4KV 220A TO-240AA
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Produkt ist nicht verfügbar
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MCMA140P1600TA Littelfuse-Power-Semiconductors-MCMA140P1600TA-Datasheet?assetguid=AA9E9258-C000-404A-B846-DEDA7C30E4F3
MCMA140P1600TA
Hersteller: IXYS
Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+98.69 EUR
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MCMA140P1800TA Littelfuse-Power-Semiconductors-MCMA140P1800TA-Datasheet?assetguid=AEAB0514-AB1F-433A-9619-9C062DA05F8E
MCMA140P1800TA
Hersteller: IXYS
Description: SCR MODULE 1.8KV 220A TO-240AA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 220 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 140 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Produkt ist nicht verfügbar
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MCMA140PD1200TB Littelfuse-Power-Semiconductors-MCMA140PD1200TB-Datasheet?assetguid=5EFC2DEE-5598-4B2A-99E5-F5A3494A5D06
MCMA140PD1200TB
Hersteller: IXYS
Description: SCR MODULE 1.2KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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MCMA140PD1600TB Littelfuse-Power-Semiconductors-MCMA140PD1600TB-Datasheet?assetguid=249D1984-7EAF-4D69-9FD2-55929BC0AF7E
MCMA140PD1600TB
Hersteller: IXYS
Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+75.9 EUR
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MCMA200P1600SA MCMA200P1600SA.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 16KV
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
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MCMA200PD1600SA MCMA200PD1600SA.pdf
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 16KV
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
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