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CLA80MT1200NHR CLA80MT1200NHR IXYS CLA80MT1200NHR.pdf Description: THYRISTOR PHASE ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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DPG30C300PC DPG30C300PC IXYS DPG30C300PC.pdf Description: DIODE ARRAY GP 300V 15A TO263
auf Bestellung 540 Stücke:
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IXTH1N200P3 IXTH1N200P3 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_1n200p3_datasheet.pdf.pdf Description: MOSFET N-CH 2000V 1A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
auf Bestellung 415 Stücke:
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2+16.3 EUR
30+9.61 EUR
120+8.14 EUR
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IXYP10N65C3D1 IXYP10N65C3D1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3D1-Datasheet.PDF Description: IGBT PT 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IXRFD631 IXRFD631 IXYS IXRFD631_Datasheet_RevA.pdf Description: IC MOSFET DVR RF 30A LOW DCB
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IXBH20N360HV IXBH20N360HV IXYS littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7 Description: IGBT 3600V 70A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 430 W
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IXBT20N360HV IXBT20N360HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n360hv_datasheet.pdf.pdf Description: IGBT 3600V 70A TO-268HV
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SLPN005H10L IXYS SLPN005H10L.pdf Description: SOLARPN HI-EFF 223X143X2MM
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SLMD242H10L IXYS SLMD242H10L.pdf Description: SOLARMD HI-EFF 214.5X131.6X2MM
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SOLARADE SOLARADE IXYS SOLARADE_Brochure.PDF Description: BATT CHARGER SOLAR CHARGER 5V 1A
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IXTP20N65XM IXTP20N65XM IXYS Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65XM IXTP32N65XM IXYS Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2206 pF @ 25 V
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IXTP20N65X IXTP20N65X IXYS littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807 Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTH20N65X IXTH20N65X IXYS littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807 Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTA20N65X IXTA20N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65X IXTP32N65X IXYS Description: MOSFET N-CH 650V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTQ32N65X IXTQ32N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH32N65X IXTH32N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
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IXTH52N65X IXTH52N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH64N65X IXTH64N65X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth64n65x_datasheet.pdf.pdf Description: MOSFET N-CH 650V 64A TO247
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IXTP2N65X2 IXTP2N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_2n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 67 Stücke:
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50+3.59 EUR
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IXTA4N65X2 IXTA4N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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IXTY4N65X2 IXTY4N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 3080 Stücke:
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70+2.33 EUR
140+2.14 EUR
560+1.92 EUR
1050+1.76 EUR
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IXTP8N65X2 IXTP8N65X2 IXYS 650V_X-Class_MOSFETs_Product_Brief.pdf Description: MOSFET N-CH 650V 8A TO220
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IXTY8N65X2 IXTY8N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1960 Stücke:
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70+2.42 EUR
140+2.33 EUR
560+2.21 EUR
1050+2.07 EUR
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IXTN102N65X2 IXTN102N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 76A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 595AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 246 Stücke:
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IXTK102N65X2 IXTK102N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
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100+17.62 EUR
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IXFA3N120-TRL IXFA3N120-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXFA3N120-TRL IXFA3N120-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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IXTR102N65X2 IXTR102N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 54A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
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IXTX120N65X2 IXTX120N65X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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IXFX120N65X2 IXFX120N65X2 IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
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IXFK120N65X2 IXFK120N65X2 IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
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IXYL60N450 IXYL60N450 IXYS Description: IGBT 4500V 90A ISOPLUSI5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
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IXFN120N65X2 IXFN120N65X2 IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
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DMA50P1200HR DMA50P1200HR IXYS DMA50P1200HR.pdf Description: DIODE RECTIFIER 1.2KV 50A TO247
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DPF60C200HJ DPF60C200HJ IXYS DPF60C200HB.pdf Description: DIODE RECT FAST 1.2KV 30A TO247
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DSA320A100NB IXYS Description: DIODE SCHOTTKY 100V 80A TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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DSA600A150NB IXYS Description: DIODE ARRAY SCHOTTKY 150V TO227
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FMM150-0075X2F FMM150-0075X2F IXYS DS100186-(FMM150-0075X2F).pdf Description: MOSFET 2N-CH 75V 120A I4-PAC-5
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IXA220I650NA IXYS IXA220I650NA.pdf Description: IGBT MODULE 650V SOT227
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IXA27IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa27if1200hj_datasheet.pdf.pdf Description: IGBT MOD 1200V 43A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 100 µA
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IXB80IF600NA IXB80IF600NA IXYS IXYS_Shortform2013.pdf Description: IGBT MODULE 600V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Supplier Device Package: SOT-227B
IGBT Type: NPT, PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXBF42N300 IXYS DS100325A(IXBF42N300).pdf Description: IGBT 3000V TO247
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IXBH10N300HV IXBH10N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixb_10n300hv_datasheet.pdf.pdf Description: IGBT 3000V 20A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-247HV (IXBH)
Td (on/off) @ 25°C: 36ns/100ns
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 180 W
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IXBL20N300C IXBL20N300C IXYS DS100553(IXBL20N300C).pdf Description: IGBT 3000V
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IXBOD2-04 IXYS IXBOD2.pdf Description: THYRISTOR RADIAL
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 400V
Supplier Device Package: FP-Case
Current - Hold (Ih): 20 mA
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IXBOD2-05 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-06 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-07 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-08 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-09 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-10 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-11 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-12 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-13 IXYS IXBOD2.pdf Description: BREAKOVER DIODE
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IXBOD2-15R IXYS Description: BREAKOVER DIODE
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IXBOD2-50R IXYS Description: BREAKOVER DIODE
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IXBOD2-56R IXYS Description: THYRISTOR RADIAL
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IXBT12N300HV IXBT12N300HV IXYS littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c Description: IGBT 3000V 30A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 64ns/180ns
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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CLA80MT1200NHR CLA80MT1200NHR.pdf
CLA80MT1200NHR
Hersteller: IXYS
Description: THYRISTOR PHASE ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 480A, 520A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.2 kV
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DPG30C300PC DPG30C300PC.pdf
DPG30C300PC
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 15A TO263
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IXTH1N200P3 littelfuse_discrete_mosfets_n-channel_standard_ixt_1n200p3_datasheet.pdf.pdf
IXTH1N200P3
Hersteller: IXYS
Description: MOSFET N-CH 2000V 1A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
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2+16.3 EUR
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IXYP10N65C3D1 Littelfuse-Discrete-IGBTs-XPT-IXYP10N65C3D1-Datasheet.PDF
IXYP10N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
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IXRFD631 IXRFD631_Datasheet_RevA.pdf
IXRFD631
Hersteller: IXYS
Description: IC MOSFET DVR RF 30A LOW DCB
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IXBH20N360HV littelfuse-discrete-igbts-ixb-20n360hv-datasheet?assetguid=1ef20bb4-b0bf-4676-980c-d6f3252647e7
IXBH20N360HV
Hersteller: IXYS
Description: IGBT 3600V 70A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 18ns/238ns
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Test Condition: 1500V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 430 W
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IXBT20N360HV littelfuse_discrete_igbts_bimosfet_ixb_20n360hv_datasheet.pdf.pdf
IXBT20N360HV
Hersteller: IXYS
Description: IGBT 3600V 70A TO-268HV
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SLPN005H10L SLPN005H10L.pdf
Hersteller: IXYS
Description: SOLARPN HI-EFF 223X143X2MM
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SLMD242H10L SLMD242H10L.pdf
Hersteller: IXYS
Description: SOLARMD HI-EFF 214.5X131.6X2MM
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SOLARADE SOLARADE_Brochure.PDF
SOLARADE
Hersteller: IXYS
Description: BATT CHARGER SOLAR CHARGER 5V 1A
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IXTP20N65XM
IXTP20N65XM
Hersteller: IXYS
Description: MOSFET N-CH 650V 9A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
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IXTP32N65XM
IXTP32N65XM
Hersteller: IXYS
Description: MOSFET N-CH 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2206 pF @ 25 V
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IXTP20N65X littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807
IXTP20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH20N65X littelfuse-discrete-mosfets-ixt-20n65x-datasheet?assetguid=cee0c26e-5e98-4819-97b9-2a9c31098807
IXTH20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTA20N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x_datasheet.pdf.pdf
IXTA20N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32N65X
IXTP32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ32N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf
IXTQ32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH32N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_32n65x_datasheet.pdf.pdf
IXTH32N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 16A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2205 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH52N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth52n65x_datasheet.pdf.pdf
IXTH52N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTH64N65X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth64n65x_datasheet.pdf.pdf
IXTH64N65X
Hersteller: IXYS
Description: MOSFET N-CH 650V 64A TO247
Produkt ist nicht verfügbar
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IXTP2N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_2n65x2_datasheet.pdf.pdf
IXTP2N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
50+3.59 EUR
Mindestbestellmenge: 4
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IXTA4N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTA4N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTY4N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTY4N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 3080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
70+2.33 EUR
140+2.14 EUR
560+1.92 EUR
1050+1.76 EUR
2030+1.69 EUR
Mindestbestellmenge: 4
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IXTP8N65X2 650V_X-Class_MOSFETs_Product_Brief.pdf
IXTP8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO220
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
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IXTY8N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTY8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
70+2.42 EUR
140+2.33 EUR
560+2.21 EUR
1050+2.07 EUR
Mindestbestellmenge: 4
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IXTN102N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTN102N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 76A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 595AW (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+51.08 EUR
10+38.11 EUR
100+33.54 EUR
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IXTK102N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTK102N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 102A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 51A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.44 EUR
25+18.41 EUR
100+17.62 EUR
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IXFA3N120-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf
IXFA3N120-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA3N120-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfa3n120_datasheet.pdf.pdf
IXFA3N120-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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IXTR102N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTR102N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 54A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.25 EUR
30+19.86 EUR
120+19.14 EUR
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IXTX120N65X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTX120N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX120N65X2 Smart%20Building%20Application%20Guide.pdf
IXFX120N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.22 EUR
30+24.68 EUR
120+23.6 EUR
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IXFK120N65X2 Smart%20Building%20Application%20Guide.pdf
IXFK120N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.46 EUR
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IXYL60N450
IXYL60N450
Hersteller: IXYS
Description: IGBT 4500V 90A ISOPLUSI5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+187.04 EUR
25+160.32 EUR
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IXFN120N65X2 Smart%20Building%20Application%20Guide.pdf
IXFN120N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.14 EUR
10+57.15 EUR
100+50.66 EUR
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DMA50P1200HR DMA50P1200HR.pdf
DMA50P1200HR
Hersteller: IXYS
Description: DIODE RECTIFIER 1.2KV 50A TO247
Produkt ist nicht verfügbar
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DPF60C200HJ DPF60C200HB.pdf
DPF60C200HJ
Hersteller: IXYS
Description: DIODE RECT FAST 1.2KV 30A TO247
Produkt ist nicht verfügbar
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DSA320A100NB
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 80A TO227
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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DSA600A150NB
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO227
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FMM150-0075X2F DS100186-(FMM150-0075X2F).pdf
FMM150-0075X2F
Hersteller: IXYS
Description: MOSFET 2N-CH 75V 120A I4-PAC-5
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.24 EUR
10+38.95 EUR
100+33.26 EUR
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IXA220I650NA IXA220I650NA.pdf
Hersteller: IXYS
Description: IGBT MODULE 650V SOT227
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IXA27IF1200HJ littelfuse_discrete_igbts_xpt_ixa27if1200hj_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 43A ISOPLUS247
Packaging: Tube
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 100 µA
auf Bestellung 2130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.11 EUR
10+15.95 EUR
100+13.79 EUR
500+12.5 EUR
1000+11.47 EUR
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IXB80IF600NA IXYS_Shortform2013.pdf
IXB80IF600NA
Hersteller: IXYS
Description: IGBT MODULE 600V 80A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Supplier Device Package: SOT-227B
IGBT Type: NPT, PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXBF42N300 DS100325A(IXBF42N300).pdf
Hersteller: IXYS
Description: IGBT 3000V TO247
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IXBH10N300HV littelfuse_discrete_igbts_bimosfet_ixb_10n300hv_datasheet.pdf.pdf
IXBH10N300HV
Hersteller: IXYS
Description: IGBT 3000V 20A 140W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.6 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Supplier Device Package: TO-247HV (IXBH)
Td (on/off) @ 25°C: 36ns/100ns
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 180 W
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IXBL20N300C DS100553(IXBL20N300C).pdf
IXBL20N300C
Hersteller: IXYS
Description: IGBT 3000V
Produkt ist nicht verfügbar
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IXBOD2-04 IXBOD2.pdf
Hersteller: IXYS
Description: THYRISTOR RADIAL
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - Breakover: 400V
Supplier Device Package: FP-Case
Current - Hold (Ih): 20 mA
Produkt ist nicht verfügbar
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IXBOD2-05 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-06 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
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IXBOD2-07 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-08 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
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IXBOD2-09 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
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IXBOD2-10 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
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IXBOD2-11 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-12 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-13 IXBOD2.pdf
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-15R
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-50R
Hersteller: IXYS
Description: BREAKOVER DIODE
Produkt ist nicht verfügbar
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IXBOD2-56R
Hersteller: IXYS
Description: THYRISTOR RADIAL
Produkt ist nicht verfügbar
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IXBT12N300HV littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c
IXBT12N300HV
Hersteller: IXYS
Description: IGBT 3000V 30A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 64ns/180ns
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
auf Bestellung 1115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.04 EUR
30+48.39 EUR
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