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MIXA60W1200TED IXYS MIXA60W1200TED.pdf Description: IGBT MODULE 1200V 60A
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MIXA60WB1200TEH IXYS MIXA60WB1200TEH.pdf Description: IGBT MODULE 1200V 85A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
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MIXA61H1200ED IXYS MIXA61H1200ED.pdf Description: IGBT MODULE 1200V 60A
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MIXA80R1200VA IXYS MIXA80R1200VA.pdf Description: IGBT MOD 1200V 120A 390W V1A-PAK
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MIXA80W1200TED IXYS MIXA80W1200TED.pdf Description: IGBT MODULE 1200V 120A 390W E2
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MIXA80W1200TEH IXYS MIXA80W1200TEH.pdf Description: IGBT MODULE 1200V 120A 390W E3
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MIXA80WB1200TEH IXYS MIXA80WB1200TEH.pdf Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
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MIXA81H1200EH IXYS MIXA81H1200EH.pdf Description: IGBT MODULE 1200V 84A
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MIXA81WB1200TEH IXYS MIXA81WB1200TEH.pdf Description: IGBT MODULE 1200V 84A
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MKE11R600DCGFC IXYS MKE11R600DCGFC.pdf Description: MOSFET N-CH 600V 15A I4PAC
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MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38P600LB-TRR IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB-TRR IXYS MKE38RK600DFELB.pdf Description: MOSFET N-CH 600V 50A SMPD
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MMIX1F132N50P3 MMIX1F132N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
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MMIX1F160N30T MMIX1F160N30T IXYS 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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MMIX1F180N25T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 132A 24SMPD
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MMIX1F230N20T MMIX1F230N20T IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Description: MOSFET N-CH 1100V 24A SMPD
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MMIX1F420N10T MMIX1F420N10T IXYS Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
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MMIX1G120N120A3V1 MMIX1G120N120A3V1 IXYS Description: IGBT PT 1200V 220A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
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MMIX1T600N04T2 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
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MMIX1X200N60B3 MMIX1X200N60B3 IXYS 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf Description: IGBT PT 600V 223A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
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MMIX1Y100N120C3H1 MMIX1Y100N120C3H1 IXYS littelfuse-discrete-igbts-mmix1y100n120c3h1-datasheet?assetguid=6dd043d9-9ee4-49c7-9ba3-98bf8ed32c89 Description: IGBT 1200V 92A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
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VUB116-16NOXT VUB116-16NOXT IXYS VUB116-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VUB120-16NOX VUB120-16NOX IXYS media?resourcetype=datasheets&itemid=3892AF19-0E23-4D1B-AEC7-D71B5510769E&filename=Littelfuse-Power-Semiconductors-VUB120-16NOX-Datasheet Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VUB120-16NOXT VUB120-16NOXT IXYS media?resourcetype=datasheets&itemid=10B91059-4B60-41FD-B516-0003A71D9FC8&filename=Littelfuse-Power-Semiconductors-VUB120-16NOXT-Datasheet Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VUB145-16NOXT VUB145-16NOXT IXYS VUB145-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 150A E2
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VUB160-16NOX VUB160-16NOX IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUB160-16NOXT VUB160-16NOXT IXYS VUB160-16NOX.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUB72-12NOXT VUB72-12NOXT IXYS VUB72-12NOXT.pdf Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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VUB72-16NOXT VUB72-16NOXT IXYS VUB72-16NOXT.pdf Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
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VUI72-16NOXT IXYS VUI72-16NOXT.pdf Description: DIODE BRIDGE 1600V 75A
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VUO120-12NO2T IXYS VUO120-12NO2T.pdf Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
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VUO120-16NO2T IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
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VUO162-16NO7 IXYS VUO120-16NO2T.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
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VUO192-16NO7 IXYS VUO192-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
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VUO52-22NO1 VUO52-22NO1 IXYS media?resourcetype=datasheets&itemid=10EEB412-5AB9-49EA-9FFB-9C193B8DDEAC&filename=Littelfuse-Power-Semiconductors-VUO52-22NO1-Datasheet Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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VUO64-16NO7 IXYS VUO64-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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VUO84-16NO7 VUO84-16NO7 IXYS VUO84-16NO7.pdf Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
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VVZB120-16ioX VVZB120-16ioX IXYS Littelfuse-Power-Semiconductors-VVZB120-16ioX-Datasheet?assetguid=C8784FE9-D1A6-45F6-B1A1-3F2C5BC14C09 Description: SCR MODULE 1.6KV V2-PAK
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
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VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
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VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
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VWM270-0075X2 IXYS VWM270-0075X2.pdf Description: MOSFET 6N-CH 75V 270A V2-PAK
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IXBT20N300HV IXBT20N300HV IXYS littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf Description: IGBT 3000V 50A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXTT1N250HV IXTT1N250HV IXYS littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646 Description: MOSFET N-CH 2500V 1.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
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IXYP15N65C3D1M IXYP15N65C3D1M IXYS littelfuse-discrete-igbts-ixyp15n65c3d1m-datasheet?assetguid=9810358b-0d4f-49a1-a56d-9255a99c4d1e Description: IGBT PT 650V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
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IXYP20N65C3D1M IXYP20N65C3D1M IXYS littelfuse-discrete-igbts-ixyp20n65c3d1m-datasheet?assetguid=0469b551-782a-4664-8cdb-21bd7e1ab323 Description: IGBT PT 650V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
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IXYT30N65C3H1HV IXYT30N65C3H1HV IXYS DS100545A(IXYT-H30N65C3H1_HV).pdf Description: IGBT 650V 60A 270W TO268HV
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IXYH50N65C3 IXYH50N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXyH100N65C3 IXyH100N65C3 IXYS DS100561BIXYH100N65C3.pdf Description: IGBT PT 650V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
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IXYN100N65C3H1 IXYN100N65C3H1 IXYS DS100568BIXYN100N65C3H1.pdf Description: IGBT MOD 650V 166A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
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DSI30-12AS-TRL DSI30-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5 Description: DIODE STANDARD 1200V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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DSI30-16AS-TRL DSI30-16AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f Description: DIODE STANDARD 1600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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800+2.75 EUR
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IXYA50N65C3 IXYA50N65C3 IXYS DS100552C(IXYA-P-H50N65C3).pdf Description: IGBT 650V 130A 600W TO263
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IXYH50N65C3H1 IXYH50N65C3H1 IXYS DS100572BIXYH50N65C3H1.pdf Description: IGBT PT 650V 130A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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IXYP50N65C3 IXYP50N65C3 IXYS littelfuse-discrete-igbts-ixy-50n65c3-datasheet?assetguid=422e985d-19fd-486c-abef-191fb70da45c Description: IGBT PT 650V 130A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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CS1710 IXYS Description: THYRISTOR 2200V
Produkt ist nicht verfügbar
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DNA30E2200PZ-TRL DNA30E2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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800+4 EUR
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DNA30EM2200PZ DNA30EM2200PZ IXYS DNA30EM2200PZ.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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MIXA60W1200TED MIXA60W1200TED.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 60A
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MIXA60WB1200TEH MIXA60WB1200TEH.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 85A 290W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
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MIXA61H1200ED MIXA61H1200ED.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 60A
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MIXA80R1200VA MIXA80R1200VA.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 120A 390W V1A-PAK
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MIXA80W1200TED MIXA80W1200TED.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 120A 390W E2
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MIXA80W1200TEH MIXA80W1200TEH.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
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MIXA80WB1200TEH MIXA80WB1200TEH.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 120A 390W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: PT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Current - Collector Cutoff (Max): 200 µA
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MIXA81H1200EH MIXA81H1200EH.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 84A
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MIXA81WB1200TEH MIXA81WB1200TEH.pdf
Hersteller: IXYS
Description: IGBT MODULE 1200V 84A
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MKE11R600DCGFC MKE11R600DCGFC.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
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MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
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MKE38P600LB-TRR SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB MKE38RK600DFELB.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
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MKE38RK600DFELB-TRR MKE38RK600DFELB.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
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MMIX1F132N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix1f132n50p3_datasheet.pdf.pdf
MMIX1F132N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 63A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
auf Bestellung 860 Stücke:
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Anzahl Preis
300+57.92 EUR
Mindestbestellmenge: 300
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MMIX1F160N30T 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf
MMIX1F160N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 102A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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MMIX1F180N25T littelfuse_discrete_mosfets_smpd_packages_mmix1f180n25t_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 250V 132A 24SMPD
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1+87.24 EUR
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MMIX1F230N20T littelfuse_discrete_mosfets_smpd_packages_mmix1f230n20t_datasheet.pdf.pdf
MMIX1F230N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 168A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
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MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
Hersteller: IXYS
Description: MOSFET N-CH 1100V 24A SMPD
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MMIX1F420N10T
MMIX1F420N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 334A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 670 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 10 V
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1+76.91 EUR
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MMIX1G120N120A3V1
MMIX1G120N120A3V1
Hersteller: IXYS
Description: IGBT PT 1200V 220A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 700 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/490ns
Switching Energy: 10mJ (on), 33mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 400 W
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 600A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Produkt ist nicht verfügbar
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MMIX1X200N60B3 238_SMPD20MOSFET20and20IGBTsProduct20Brief01.pdf
MMIX1X200N60B3
Hersteller: IXYS
Description: IGBT PT 600V 223A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 223 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 625 W
Produkt ist nicht verfügbar
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MMIX1Y100N120C3H1 littelfuse-discrete-igbts-mmix1y100n120c3h1-datasheet?assetguid=6dd043d9-9ee4-49c7-9ba3-98bf8ed32c89
MMIX1Y100N120C3H1
Hersteller: IXYS
Description: IGBT 1200V 92A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 400 W
Produkt ist nicht verfügbar
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VUB116-16NOXT VUB116-16NOXT.pdf
VUB116-16NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 120A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 2.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+149.97 EUR
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VUB120-16NOX media?resourcetype=datasheets&itemid=3892AF19-0E23-4D1B-AEC7-D71B5510769E&filename=Littelfuse-Power-Semiconductors-VUB120-16NOX-Datasheet
VUB120-16NOX
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Produkt ist nicht verfügbar
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VUB120-16NOXT media?resourcetype=datasheets&itemid=10B91059-4B60-41FD-B516-0003A71D9FC8&filename=Littelfuse-Power-Semiconductors-VUB120-16NOXT-Datasheet
VUB120-16NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Through Hole
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 180 A
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Produkt ist nicht verfügbar
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VUB145-16NOXT VUB145-16NOXT.pdf
VUB145-16NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 150A E2
Produkt ist nicht verfügbar
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VUB160-16NOX VUB160-16NOX.pdf
VUB160-16NOX
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
Produkt ist nicht verfügbar
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VUB160-16NOXT VUB160-16NOX.pdf
VUB160-16NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
Produkt ist nicht verfügbar
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VUB72-12NOXT VUB72-12NOXT.pdf
VUB72-12NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.24 EUR
10+67.94 EUR
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VUB72-16NOXT VUB72-16NOXT.pdf
VUB72-16NOXT
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 75A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 75 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1600 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+89.94 EUR
10+83.91 EUR
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VUI72-16NOXT VUI72-16NOXT.pdf
Hersteller: IXYS
Description: DIODE BRIDGE 1600V 75A
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+86.82 EUR
10+80.99 EUR
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VUO120-12NO2T VUO120-12NO2T.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.2KV 180A V2-PAK
Produkt ist nicht verfügbar
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VUO120-16NO2T VUO120-16NO2T.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV 180A V2-PAK
Produkt ist nicht verfügbar
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VUO162-16NO7 VUO120-16NO2T.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
Produkt ist nicht verfügbar
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VUO192-16NO7 VUO192-16NO7.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-E-FLAT
Produkt ist nicht verfügbar
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VUO52-22NO1 media?resourcetype=datasheets&itemid=10EEB412-5AB9-49EA-9FFB-9C193B8DDEAC&filename=Littelfuse-Power-Semiconductors-VUO52-22NO1-Datasheet
VUO52-22NO1
Hersteller: IXYS
Description: BRIDGE RECT 3P 2.2KV 60A V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1A-PAK
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.37 EUR
10+58.22 EUR
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VUO64-16NO7 VUO64-16NO7.pdf
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Produkt ist nicht verfügbar
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VUO84-16NO7 VUO84-16NO7.pdf
VUO84-16NO7
Hersteller: IXYS
Description: BRIDGE RECT 3P 1.6KV PWS-D-FLAT
Packaging: Box
Package / Case: PWS-D Flat
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D-Flat
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+68.92 EUR
10+61.42 EUR
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VVZB120-16ioX Littelfuse-Power-Semiconductors-VVZB120-16ioX-Datasheet?assetguid=C8784FE9-D1A6-45F6-B1A1-3F2C5BC14C09
VVZB120-16ioX
Hersteller: IXYS
Description: SCR MODULE 1.6KV V2-PAK
Packaging: Box
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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VVZB135-16IOXT VVZB135-16IOXT.pdf
Hersteller: IXYS
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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VVZB170-16ioXT VVZB170-16IOXT.pdf
Hersteller: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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VWM270-0075X2 VWM270-0075X2.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 270A V2-PAK
Produkt ist nicht verfügbar
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IXBT20N300HV littelfuse_discrete_igbts_bimosfet_ixbt20n300hv_datasheet.pdf.pdf
IXBT20N300HV
Hersteller: IXYS
Description: IGBT 3000V 50A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-268AA
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXTT1N250HV littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646
IXTT1N250HV
Hersteller: IXYS
Description: MOSFET N-CH 2500V 1.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+66.4 EUR
10+49.59 EUR
100+48.61 EUR
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IXYP15N65C3D1M littelfuse-discrete-igbts-ixyp15n65c3d1m-datasheet?assetguid=9810358b-0d4f-49a1-a56d-9255a99c4d1e
IXYP15N65C3D1M
Hersteller: IXYS
Description: IGBT PT 650V 16A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
Produkt ist nicht verfügbar
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IXYP20N65C3D1M littelfuse-discrete-igbts-ixyp20n65c3d1m-datasheet?assetguid=0469b551-782a-4664-8cdb-21bd7e1ab323
IXYP20N65C3D1M
Hersteller: IXYS
Description: IGBT PT 650V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
Produkt ist nicht verfügbar
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IXYT30N65C3H1HV DS100545A(IXYT-H30N65C3H1_HV).pdf
IXYT30N65C3H1HV
Hersteller: IXYS
Description: IGBT 650V 60A 270W TO268HV
Produkt ist nicht verfügbar
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IXYH50N65C3 littelfuse_discrete_igbts_xpt_ixy_50n65c3_datasheet.pdf.pdf
IXYH50N65C3
Hersteller: IXYS
Description: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXyH100N65C3 DS100561BIXYH100N65C3.pdf
IXyH100N65C3
Hersteller: IXYS
Description: IGBT PT 650V 200A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.79 EUR
30+13.97 EUR
120+12.04 EUR
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IXYN100N65C3H1 DS100568BIXYN100N65C3H1.pdf
IXYN100N65C3H1
Hersteller: IXYS
Description: IGBT MOD 650V 166A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.46 EUR
10+34.13 EUR
100+29.45 EUR
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DSI30-12AS-TRL Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5
DSI30-12AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 1200V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 3983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+3.59 EUR
100+3.26 EUR
Mindestbestellmenge: 4
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DSI30-16AS-TRL Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f
DSI30-16AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 1600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.75 EUR
1600+2.66 EUR
Mindestbestellmenge: 800
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IXYA50N65C3 DS100552C(IXYA-P-H50N65C3).pdf
IXYA50N65C3
Hersteller: IXYS
Description: IGBT 650V 130A 600W TO263
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
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IXYH50N65C3H1 DS100572BIXYH50N65C3H1.pdf
IXYH50N65C3H1
Hersteller: IXYS
Description: IGBT PT 650V 130A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.59 EUR
30+11.86 EUR
120+10.16 EUR
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IXYP50N65C3 littelfuse-discrete-igbts-ixy-50n65c3-datasheet?assetguid=422e985d-19fd-486c-abef-191fb70da45c
IXYP50N65C3
Hersteller: IXYS
Description: IGBT PT 650V 130A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.27 EUR
50+6.66 EUR
100+6.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CS1710
Hersteller: IXYS
Description: THYRISTOR 2200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DNA30E2200PZ-TRL media?resourcetype=datasheets&itemid=15a76a8f-64ce-441e-839f-231a223f6827&filename=Littelfuse-Power-Semiconductors-DNA30E2200PZ-Datasheet
DNA30E2200PZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4 EUR
Mindestbestellmenge: 800
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DNA30EM2200PZ DNA30EM2200PZ.pdf
DNA30EM2200PZ
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
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