
MCNA120UI2200TED Littelfuse

Three Phase Rectifier Bridge and Half-Controlled (High-Side) with Brake Unit 22-Pin E2-Pack Box
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Technische Details MCNA120UI2200TED Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 150A, Power dissipation: 190W, Max. off-state voltage: 1.7kV, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Semiconductor structure: diode/transistor, Case: E2-Pack, Application: Inverter, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MCNA120UI2200TED
Foto | Bezeichnung | Hersteller | Beschreibung |
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MCNA120UI2200TED | Hersteller : IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A Power dissipation: 190W Max. off-state voltage: 1.7kV Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Semiconductor structure: diode/transistor Case: E2-Pack Application: Inverter Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MCNA120UI2200TED | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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MCNA120UI2200TED | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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MCNA120UI2200TED | Hersteller : IXYS |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A Power dissipation: 190W Max. off-state voltage: 1.7kV Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Semiconductor structure: diode/transistor Case: E2-Pack Application: Inverter Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |