MCNA120UI2200TED Littelfuse
Hersteller: LittelfuseThree Phase Rectifier Bridge and Half-Controlled (High-Side) with Brake Unit 22-Pin E2-Pack Box
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Technische Details MCNA120UI2200TED Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Case: E2-Pack, Application: Inverter, Power dissipation: 190W, Type of module: IGBT, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Max. off-state voltage: 1.7kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 150A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MCNA120UI2200TED
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MCNA120UI2200TED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E2-Pack Application: Inverter Power dissipation: 190W Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MCNA120UI2200TED | Hersteller : IXYS |
Description: MOD THYRISTOR TRI 22KV TO-240 |
Produkt ist nicht verfügbar |
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MCNA120UI2200TED | Hersteller : IXYS |
Bridge Rectifiers High Voltage Thyristor Module |
Produkt ist nicht verfügbar |
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| MCNA120UI2200TED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; 190W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: E2-Pack Application: Inverter Power dissipation: 190W Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |