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IXGN400N60B3 IXGN400N60B3 IXYS littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323 Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
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IXGN50N120C3H1 IXGN50N120C3H1 IXYS littelfuse_discrete_igbts_pt_ixgn50n120c3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 95A 460W SOT227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXGN82N120B3H1 IXGN82N120B3H1 IXYS littelfuse_discrete_igbts_pt_ixgn82n120b3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 145A 595W SOT227B
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 595 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 145 A
Part Status: Discontinued at Digi-Key
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXGP12N120A3 IXGP12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO220
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
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IXGP24N60C4 IXGP24N60C4 IXYS DS100253B(IXGA-H-P24N60C4).pdf Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 21ns/143ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP24N60C4D1 IXGP24N60C4D1 IXYS DS100257A(IXGP24N60C4D1).pdf Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 350µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 22ns/192ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP30N60B4D1 IXGP30N60B4D1 IXYS Description: IGBT 600V 56A 190W TO220
Packaging: Tube
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
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IXGP50N60C4 IXGP50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO220
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IXGQ50N60B4D1 IXGQ50N60B4D1 IXYS DS100318C(IXGQ-H50N60B4D1).pdf Description: IGBT 600V 100A 300W TO3P
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 110 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 930µJ (on), 1mJ (off)
Td (on/off) @ 25°C: 37ns/330ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXGQ50N60C4D1 IXGQ50N60C4D1 IXYS DS100297D(IXGH-Q50N60C4D1).pdf Description: IGBT 600V 90A 300W TO3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-3P
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IXGR55N120A3H1 IXGR55N120A3H1 IXYS Description: IGBT PT 1200V 70A ISOPLUS247
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
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IXGR6N170A IXGR6N170A IXYS littelfuse-discrete-igbts-ixgr6n170a-datasheet?assetguid=e8bac480-2930-4ec3-906b-91f408d5b342 Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGT20N140C3H1 IXGT20N140C3H1 IXYS DS100251(IXGH-GT20N140C3H1).pdf Description: IGBT 1400V 42A 250W TO268
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IXGT72N60B3 IXGT72N60B3 IXYS Description: IGBT 600V 75A 540W TO268
Td (on/off) @ 25°C: 31ns/150ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 1.05mJ (off)
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IXGX120N120B3 IXGX120N120B3 IXYS media?resourcetype=datasheets&itemid=5366A0CF-0BA0-4D32-972E-C98515FBEF79&filename=Littelfuse-Discrete-IGBTs-PT-IXG-120N120B3-Datasheet.PDF Description: IGBT PT 1200V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
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IXGX28N140B3H1 IXGX28N140B3H1 IXYS Description: IGBT 1400V 60A 300W PLUS247
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IXGX320N60B3 IXGX320N60B3 IXYS littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437 Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
auf Bestellung 223 Stücke:
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf Description: IGBT 1200V 125A 460W PLUS247
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXGX64N60B3D1 IXGX64N60B3D1 IXYS Description: IGBT 600V 460W PLUS247
Part Status: Obsolete
Gate Charge: 168 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 25ns/138ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXGX82N120A3 IXGX82N120A3 IXYS Description: IGBT 1200V 260A 1250W PLUS247
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
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IXGX82N120B3 IXGX82N120B3 IXYS Description: IGBT 1200V 230A 1250W PLUS247
Current - Collector (Ic) (Max): 230 A
Part Status: Active
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IXTA15P15T IXTA15P15T IXYS DS100292A(IXTA-TP-TY15P15T).pdf Description: MOSFET P-CH 150V 15A TO-263
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IXTA26P10T IXTA26P10T IXYS DS100291A(IXTA-TP-TY26P10T).pdf Description: MOSFET P-CH 100V 26A TO-263
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IXTA460P2 IXTA460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO263
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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IXTA48P05T IXTA48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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50+3.67 EUR
100+3.6 EUR
500+3.25 EUR
1000+3.09 EUR
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IXTH140P10T IXTH140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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IXTH300N04T2 IXTH300N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 300A TO247
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH420N04T2 IXTH420N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 420A TO247
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IXTH460P2 IXTH460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH4N150 IXTH4N150 IXYS DS100287BIXTH4N150.pdf Description: MOSFET N-CH 1500V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
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IXTH50N25T IXTH50N25T IXYS littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586 Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
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IXTJ6N150 IXYS DS100448A(IXTJ6N150).pdf Description: MOSFET N-CH 1500V 3A ISOTO-247
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IXTK20N150 IXTK20N150 IXYS 238_DS100424BIXTKTX20N150.pdf Description: MOSFET N-CH 1500V 20A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN120P20T IXTN120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXTP02N120P IXTP02N120P IXYS littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Description: MOSFET N-CH 1200V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
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IXTP05N100P IXTP05N100P IXYS littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807 Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
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IXTP10P15T IXTP10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTP1N80P IXTP1N80P IXYS DS100112(IXTA-TP-TU-TY1N80P).pdf Description: MOSFET N-CH 800V 1A TO-220
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IXTP460P2 IXTP460P2 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXTP48P05T IXTP48P05T IXYS littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84 Description: MOSFET P-CH 50V 48A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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500+3.17 EUR
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IXTP60N20T IXTP60N20T IXYS littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1 Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
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IXTR120P20T IXTR120P20T IXYS littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf Description: MOSFET P-CH 200V 90A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTR140P10T IXTR140P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 110A ISOPLUS247
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IXTR210P10T IXTR210P10T IXYS littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 195A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTT110N10L2 IXTT110N10L2 IXYS PdfFile135152.pdf Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXTT440N055T2 IXTT440N055T2 IXYS littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25 Description: MOSFET N-CH 55V 440A TO268
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT500N04T2 IXTT500N04T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf Description: MOSFET N-CH 40V 500A TO268
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IXTX210P10T IXTX210P10T IXYS DS100397AIXTKTX210P10T.pdf Description: MOSFET P-CH 100V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
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IXTY10P15T IXTY10P15T IXYS DS100290(IXTA-TP-TY10P15T).pdf Description: MOSFET P-CH 150V 10A TO-252
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IXTY26P10T IXTY26P10T IXYS littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 26A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXTY32P05T IXTY32P05T IXYS DS99967C(IXTY-TA-TP32P05T).pdf Description: MOSFET P-CH 50V 32A TO-252
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS DS100334BIXXH30N60B3D1.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 510 Stücke:
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IXXH50N60B3 IXXH50N60B3 IXYS littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170 Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS DS100302BIXXH50N60B3D1.pdf Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXH75N60B3D1 IXXH75N60B3D1 IXYS DS100328BIXXH75N60B3D1.pdf Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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IXXH75N60C3 IXXH75N60C3 IXYS littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4 Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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IXXK200N60B3 IXXK200N60B3 IXYS DS100372AIXXKX200N60B3.pdf Description: IGBT PT 600V 380A TO-264
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 48ns/160ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXXK200N60C3 IXXK200N60C3 IXYS Description: IGBT PT 600V 340A TO-264
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 47ns/125ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Produkt ist nicht verfügbar
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IXXR100N60B3H1 IXXR100N60B3H1 IXYS media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf Description: IGBT 600V 145A 400W ISOPLUS247
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGN400N60B3 littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323
IXGN400N60B3
Hersteller: IXYS
Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
auf Bestellung 134 Stücke:
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Anzahl Preis
1+115.68 EUR
10+89.42 EUR
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IXGN50N120C3H1 littelfuse_discrete_igbts_pt_ixgn50n120c3h1_datasheet.pdf.pdf
IXGN50N120C3H1
Hersteller: IXYS
Description: IGBT MOD 1200V 95A 460W SOT227B
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 460 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXGN82N120B3H1 littelfuse_discrete_igbts_pt_ixgn82n120b3h1_datasheet.pdf.pdf
IXGN82N120B3H1
Hersteller: IXYS
Description: IGBT MOD 1200V 145A 595W SOT227B
Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 595 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 145 A
Part Status: Discontinued at Digi-Key
IGBT Type: PT
Supplier Device Package: SOT-227B
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXGP12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGP12N120A3
Hersteller: IXYS
Description: IGBT 1200V 22A 100W TO220
Power - Max: 100 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 22 A
Part Status: Active
Gate Charge: 20.4 nC
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 1168 Stücke:
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Anzahl Preis
3+7.04 EUR
30+4.19 EUR
120+3.53 EUR
510+3.07 EUR
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IXGP24N60C4 DS100253B(IXGA-H-P24N60C4).pdf
IXGP24N60C4
Hersteller: IXYS
Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 21ns/143ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP24N60C4D1 DS100257A(IXGP24N60C4D1).pdf
IXGP24N60C4D1
Hersteller: IXYS
Description: IGBT 600V 56A 190W TO220
Power - Max: 190 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Part Status: Obsolete
Gate Charge: 64 nC
Test Condition: 360V, 24A, 10Ohm, 15V
Switching Energy: 350µJ (on), 340µJ (off)
Td (on/off) @ 25°C: 22ns/192ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGP30N60B4D1
IXGP30N60B4D1
Hersteller: IXYS
Description: IGBT 600V 56A 190W TO220
Packaging: Tube
Power - Max: 190 W
Current - Collector Pulsed (Icm): 156 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 56 A
Gate Charge: 77 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 440µJ (on), 700µJ (off)
Td (on/off) @ 25°C: 21ns/200ns
IGBT Type: PT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
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IXGP50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGP50N60C4
Hersteller: IXYS
Description: IGBT 600V 90A 300W TO220
Produkt ist nicht verfügbar
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IXGQ50N60B4D1 DS100318C(IXGQ-H50N60B4D1).pdf
IXGQ50N60B4D1
Hersteller: IXYS
Description: IGBT 600V 100A 300W TO3P
Power - Max: 300 W
Current - Collector Pulsed (Icm): 230 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 110 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 930µJ (on), 1mJ (off)
Td (on/off) @ 25°C: 37ns/330ns
IGBT Type: PT
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXGQ50N60C4D1 DS100297D(IXGH-Q50N60C4D1).pdf
IXGQ50N60C4D1
Hersteller: IXYS
Description: IGBT 600V 90A 300W TO3P
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 300 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Gate Charge: 113 nC
Test Condition: 400V, 36A, 10Ohm, 15V
Switching Energy: 950µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/270ns
IGBT Type: PT
Supplier Device Package: TO-3P
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IXGR55N120A3H1
IXGR55N120A3H1
Hersteller: IXYS
Description: IGBT PT 1200V 70A ISOPLUS247
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
Part Status: Active
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IXGR6N170A littelfuse-discrete-igbts-ixgr6n170a-datasheet?assetguid=e8bac480-2930-4ec3-906b-91f408d5b342
IXGR6N170A
Hersteller: IXYS
Description: IGBT 1700V 5.5A ISOPLUS247
Power - Max: 50 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 18.5 nC
Test Condition: 850V, 6A, 33Ohm, 15V
Switching Energy: 590µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 46ns/220ns
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGT20N140C3H1 DS100251(IXGH-GT20N140C3H1).pdf
IXGT20N140C3H1
Hersteller: IXYS
Description: IGBT 1400V 42A 250W TO268
Produkt ist nicht verfügbar
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IXGT72N60B3
IXGT72N60B3
Hersteller: IXYS
Description: IGBT 600V 75A 540W TO268
Td (on/off) @ 25°C: 31ns/150ns
IGBT Type: PT
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 1.05mJ (off)
Produkt ist nicht verfügbar
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IXGX120N120B3 media?resourcetype=datasheets&itemid=5366A0CF-0BA0-4D32-972E-C98515FBEF79&filename=Littelfuse-Discrete-IGBTs-PT-IXG-120N120B3-Datasheet.PDF
IXGX120N120B3
Hersteller: IXYS
Description: IGBT PT 1200V 200A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 36ns/275ns
Switching Energy: 5.5mJ (on), 5.8mJ (off)
Test Condition: 600V, 100A, 2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 830 W
Produkt ist nicht verfügbar
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IXGX28N140B3H1
IXGX28N140B3H1
Hersteller: IXYS
Description: IGBT 1400V 60A 300W PLUS247
Produkt ist nicht verfügbar
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IXGX320N60B3 littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437
IXGX320N60B3
Hersteller: IXYS
Description: IGBT PT 600V 500A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.98 EUR
30+44.22 EUR
120+42.51 EUR
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IXGX55N120A3H1 media?resourcetype=datasheets&itemid=0b246b35-b876-4e29-9349-439823204dc3&filename=littelfuse_discrete_igbts_pt_ixg_55n120a3h1_datasheet.pdf
IXGX55N120A3H1
Hersteller: IXYS
Description: IGBT 1200V 125A 460W PLUS247
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 125 A
Gate Charge: 185 nC
Test Condition: 960V, 55A, 3Ohm, 15V
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Td (on/off) @ 25°C: 23ns/365ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXGX64N60B3D1
IXGX64N60B3D1
Hersteller: IXYS
Description: IGBT 600V 460W PLUS247
Part Status: Obsolete
Gate Charge: 168 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 25ns/138ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 460 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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IXGX82N120A3
IXGX82N120A3
Hersteller: IXYS
Description: IGBT 1200V 260A 1250W PLUS247
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
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IXGX82N120B3
IXGX82N120B3
Hersteller: IXYS
Description: IGBT 1200V 230A 1250W PLUS247
Current - Collector (Ic) (Max): 230 A
Part Status: Active
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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IXTA15P15T DS100292A(IXTA-TP-TY15P15T).pdf
IXTA15P15T
Hersteller: IXYS
Description: MOSFET P-CH 150V 15A TO-263
Produkt ist nicht verfügbar
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IXTA26P10T DS100291A(IXTA-TP-TY26P10T).pdf
IXTA26P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 26A TO-263
Produkt ist nicht verfügbar
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IXTA460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTA460P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO263
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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IXTA48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTA48P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 3795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
50+3.67 EUR
100+3.6 EUR
500+3.25 EUR
1000+3.09 EUR
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IXTH140P10T littelfuse_discrete_mosfets_p-channel_ixt_140p10t_datasheet.pdf.pdf
IXTH140P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 140A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 37 Stücke:
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Anzahl Preis
1+33.42 EUR
10+30.72 EUR
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IXTH300N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth300n04t2_datasheet.pdf.pdf
IXTH300N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 300A TO247
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH420N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixth420n04t2_datasheet.pdf.pdf
IXTH420N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 420A TO247
Produkt ist nicht verfügbar
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IXTH460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTH460P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH4N150 DS100287BIXTH4N150.pdf
IXTH4N150
Hersteller: IXYS
Description: MOSFET N-CH 1500V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH50N25T littelfuse-discrete-mosfets-ixt-50n25t-datasheet?assetguid=d7f19b2b-0219-4b0c-a29d-b093518ee586
IXTH50N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Produkt ist nicht verfügbar
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IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Hersteller: IXYS
Description: MOSFET N-CH 1500V 2.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.11 EUR
30+14.77 EUR
120+12.72 EUR
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IXTJ6N150 DS100448A(IXTJ6N150).pdf
Hersteller: IXYS
Description: MOSFET N-CH 1500V 3A ISOTO-247
Produkt ist nicht verfügbar
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IXTK20N150 238_DS100424BIXTKTX20N150.pdf
IXTK20N150
Hersteller: IXYS
Description: MOSFET N-CH 1500V 20A TO264
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTN120P20T littelfuse_discrete_mosfets_p-channel_ixtn120p20t_datasheet.pdf.pdf
IXTN120P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 106A SOT227B
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 4 Stücke:
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Anzahl Preis
1+84.97 EUR
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IXTP02N120P littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0
IXTP02N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 200MA TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
auf Bestellung 2939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
50+2.63 EUR
100+2.38 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.69 EUR
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IXTP05N100P littelfuse-discrete-mosfets-ixt-05n100p-datasheet?assetguid=96c672c8-2a09-4a39-a0da-772c2b944807
IXTP05N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 500MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 25 V
Produkt ist nicht verfügbar
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IXTP10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTP10P15T
Hersteller: IXYS
Description: MOSFET P-CH 150V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
50+4.62 EUR
100+3.96 EUR
500+3.52 EUR
1000+3.01 EUR
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IXTP1N80P DS100112(IXTA-TP-TU-TY1N80P).pdf
IXTP1N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 1A TO-220
Produkt ist nicht verfügbar
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IXTP460P2 littelfuse_discrete_mosfets_n-channel_standard_ixt_460p2_datasheet.pdf.pdf
IXTP460P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTP48P05T littelfuse-discrete-mosfets-ixt-48p05t-datasheet?assetguid=62c140ac-c7df-4f51-9814-249b142e0b84
IXTP48P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
50+4.07 EUR
100+3.71 EUR
500+3.17 EUR
1000+2.89 EUR
Mindestbestellmenge: 3
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IXTP60N20T littelfuse-discrete-mosfets-ixt-60n20t-datasheet?assetguid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1
IXTP60N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.26 EUR
50+6.04 EUR
100+5.53 EUR
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IXTR120P20T littelfuse_discrete_mosfets_p-channel_ixtr120p20t_datasheet.pdf.pdf
IXTR120P20T
Hersteller: IXYS
Description: MOSFET P-CH 200V 90A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTR140P10T littelfuse_discrete_mosfets_p-channel_ixtr140p10t_datasheet.pdf.pdf
IXTR140P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 110A ISOPLUS247
Produkt ist nicht verfügbar
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IXTR210P10T littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf
IXTR210P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+39.24 EUR
Mindestbestellmenge: 300
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IXTT110N10L2 PdfFile135152.pdf
IXTT110N10L2
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT440N055T2 littelfuse-discrete-mosfets-ixt-440n055t2-datasheet?assetguid=6586e5ca-cda3-411d-bbe5-f50ff4a13d25
IXTT440N055T2
Hersteller: IXYS
Description: MOSFET N-CH 55V 440A TO268
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1000W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 440A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT500N04T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_500n04t2_datasheet.pdf.pdf
IXTT500N04T2
Hersteller: IXYS
Description: MOSFET N-CH 40V 500A TO268
Produkt ist nicht verfügbar
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IXTX210P10T DS100397AIXTKTX210P10T.pdf
IXTX210P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 210A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+49.46 EUR
30+32.26 EUR
120+29.23 EUR
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IXTY10P15T DS100290(IXTA-TP-TY10P15T).pdf
IXTY10P15T
Hersteller: IXYS
Description: MOSFET P-CH 150V 10A TO-252
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IXTY26P10T littelfuse_discrete_mosfets_p-channel_ixt_26p10t_datasheet.pdf.pdf
IXTY26P10T
Hersteller: IXYS
Description: MOSFET P-CH 100V 26A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXTY32P05T DS99967C(IXTY-TA-TP32P05T).pdf
IXTY32P05T
Hersteller: IXYS
Description: MOSFET P-CH 50V 32A TO-252
Produkt ist nicht verfügbar
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IXXH30N60B3D1 DS100334BIXXH30N60B3D1.pdf
IXXH30N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.62 EUR
30+7.32 EUR
120+6.16 EUR
510+5.31 EUR
Mindestbestellmenge: 2
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IXXH50N60B3 littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170
IXXH50N60B3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.6 EUR
30+13.78 EUR
120+11.85 EUR
510+10.91 EUR
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IXXH50N60B3D1 DS100302BIXXH50N60B3D1.pdf
IXXH50N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXXH75N60B3D1 DS100328BIXXH75N60B3D1.pdf
IXXH75N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXH75N60C3 littelfuse-discrete-igbts-ixxh75n60c3-datasheet?assetguid=18b30bab-ce67-4b38-a8fd-bd1143f61ab4
IXXH75N60C3
Hersteller: IXYS
Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXXK200N60B3 DS100372AIXXKX200N60B3.pdf
IXXK200N60B3
Hersteller: IXYS
Description: IGBT PT 600V 380A TO-264
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 380 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 48ns/160ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXXK200N60C3
IXXK200N60C3
Hersteller: IXYS
Description: IGBT PT 600V 340A TO-264
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1630 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 360V, 100A, 1Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 47ns/125ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
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IXXR100N60B3H1 media?resourcetype=datasheets&itemid=613f1ae9-0731-4a6d-b1c2-52f5f0c7f673&filename=littelfuse_discrete_igbts_xpt_ixxr100n60b3h1_datasheet.pdf
IXXR100N60B3H1
Hersteller: IXYS
Description: IGBT 600V 145A 400W ISOPLUS247
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
IGBT Type: PT
Supplier Device Package: ISOPLUS247™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+26.77 EUR
Mindestbestellmenge: 300
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