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LDS8720 LDS8720 IXYS LDS8720-Datasheet-_Rev-N1_1.pdf Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
LDS8711 LDS8711 IXYS LDS8711-Datasheet-_Rev-N1_0.pdf Description: IC LED DRIVER RGLTR DIM 8TDFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
LDS8724 LDS8724 IXYS LDS8724-Datasheet-_Rev-N1_0.pdf Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
LDS8711 LDS8711 IXYS LDS8711-Datasheet-_Rev-N1_0.pdf Description: IC LED DRIVER RGLTR DIM 8TDFN
auf Bestellung 1947 Stücke:
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LDS8711 LDS8711 IXYS LDS8711-Datasheet-_Rev-N1_0.pdf Description: IC LED DRIVER RGLTR DIM 8TDFN
Produkt ist nicht verfügbar
LDS8724 LDS8724 IXYS LDS8724-Datasheet-_Rev-N1_0.pdf Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
IXTF1N400 IXTF1N400 IXYS DS100159D(IXTF1N400).pdf Description: MOSFET N-CH 4000V 1A ISOPLUS I4
Produkt ist nicht verfügbar
IXTH16N10D2 IXTH16N10D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 75 Stücke:
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IXTH16N20D2 IXTH16N20D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 85 Stücke:
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IXTT16N10D2 IXTT16N10D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 493 Stücke:
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IXTT16N20D2 IXTT16N20D2 IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
IXGF30N400 IXGF30N400 IXYS littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf Description: IGBT 4000V 30A 160W I4-PAK
Produkt ist nicht verfügbar
IXXK100N60B3H1 IXXK100N60B3H1 IXYS IXXK%2CX100N60B3H1.pdf Description: IGBT PT 600V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
auf Bestellung 100 Stücke:
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1+41.5 EUR
25+ 34.41 EUR
100+ 32.26 EUR
IXXH100N60B3 IXXH100N60B3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf Description: IGBT 600V 220A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 830 W
auf Bestellung 16 Stücke:
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1+25.19 EUR
IXXH50N60C3 IXXH50N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh50n60c3_datasheet.pdf.pdf Description: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH50N60C3D1 IXXH50N60C3D1 IXYS littelfuse_discrete_igbts_xpt_ixxh50n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH100N60C3 IXXH100N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf Description: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
auf Bestellung 19 Stücke:
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1+28.81 EUR
IXXK100N60C3H1 IXXK100N60C3H1 IXYS littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf.pdf Description: IGBT PT 600V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
auf Bestellung 270 Stücke:
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IXTA130N10T-TRL IXTA130N10T-TRL IXYS DS99649B(IXTA-TP130N10T).pdf Description: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXFA4N100Q-TRL IXFA4N100Q-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
DEIC421 IXYS deic421.pdf Description: IC GATE DRVR LOW-SIDE DE275
Packaging: Bulk
Package / Case: 7-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 30V
Input Type: Inverting
Supplier Device Package: 7-SMD
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 20A, 20A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IXFQ60N50P3 IXFQ60N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_60n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 11 Stücke:
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2+16.09 EUR
10+ 13.78 EUR
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IXFT60N50P3 IXFT60N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_60n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.2 EUR
IXFK78N50P3 IXFK78N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_78n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Produkt ist nicht verfügbar
IXFX78N50P3 IXFX78N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_78n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 78A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 810 Stücke:
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1+22.16 EUR
30+ 17.93 EUR
120+ 16.88 EUR
510+ 15.29 EUR
IXFQ28N60P3 IXFQ28N60P3 IXYS IXFx28N60P3.pdf Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
Produkt ist nicht verfügbar
IXFH22N60P3 IXFH22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
IXFP22N60P3 IXFP22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1151 Stücke:
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2+8.8 EUR
50+ 6.98 EUR
100+ 5.98 EUR
500+ 5.32 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 2
IXFQ22N60P3 IXFQ22N60P3 IXYS IXFx22N60P3.pdf Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
IXFH42N60P3 IXFH42N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh42n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Produkt ist nicht verfügbar
IXYH82N120C3 IXYH82N120C3 IXYS littelfuse_discrete_igbts_xpt_ixyh82n120c3_datasheet.pdf.pdf Description: IGBT 1200V 200A 1250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXYN82N120C3H1 IXYN82N120C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyn82n120c3h1_datasheet.pdf.pdf Description: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
Produkt ist nicht verfügbar
IXYB82N120C3H1 IXYB82N120C3H1 IXYS littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf Description: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
Produkt ist nicht verfügbar
SLMD121H4 SLMD121H4 IXYS 20110107-SLMD121H04-DATA-SHEET.pdf Description: MONO SOLAR CELL 43MM X 14MM
Produkt ist nicht verfügbar
SLMD121H8L SLMD121H8L IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
auf Bestellung 167 Stücke:
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SLMD600H10 SLMD600H10 IXYS 20110107-SLMD600H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 22MM X 35MM
Produkt ist nicht verfügbar
SLMD960H12 SLMD960H12 IXYS 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
auf Bestellung 652 Stücke:
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SLMD121H10 SLMD121H10 IXYS 20110107-SLMD121H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 42MM X 35MM
Produkt ist nicht verfügbar
SLMD481H08 SLMD481H08 IXYS 20110107-SLMD121H08-DATA-SHEET.pdf Description: MONO SOLAR CELL 86MM X 14MM
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
SLMD481H10 SLMD481H10 IXYS 20111214-SLMD481H10-DATA-SHEET.pdf Description: MONO SOLAR CELL 89MM X 67MM
auf Bestellung 28 Stücke:
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SLMD481H12 SLMD481H12 IXYS 20111214-SLMD481H12-DATA-SHEET.pdf Description: MONO SOLAR CELL 90MM X 79MM
Produkt ist nicht verfügbar
IXFH70N20Q3 IXFH70N20Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n20q3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Produkt ist nicht verfügbar
IXFT70N20Q3 IXFT70N20Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n20q3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Produkt ist nicht verfügbar
IXFH50N30Q3 IXFH50N30Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_50n30q3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
auf Bestellung 2742 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.51 EUR
30+ 17.41 EUR
120+ 16.39 EUR
510+ 14.85 EUR
1020+ 13.62 EUR
IXFT50N30Q3 IXFT50N30Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_50n30q3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
Produkt ist nicht verfügbar
IXFT70N30Q3 IXFT70N30Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n30q3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
Produkt ist nicht verfügbar
IXFB100N50Q3 IXFB100N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb100n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.64 EUR
10+ 64.98 EUR
IXFR44N50Q3 IXFR44N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr44n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFT30N50Q3 IXFT30N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 450 Stücke:
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1+24.29 EUR
10+ 21.39 EUR
100+ 18.5 EUR
IXFH44N50Q3 IXFH44N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 204 Stücke:
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1+33.72 EUR
30+ 27.3 EUR
120+ 25.69 EUR
IXFT44N50Q3 IXFT44N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 44A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFR64N50Q3 IXFR64N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 45A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFR80N50Q3 IXFR80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 50A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 374 Stücke:
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1+65.14 EUR
10+ 60.08 EUR
100+ 51.3 EUR
IXFN80N50Q3 IXFN80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
IXFK64N50Q3 IXFK64N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_64n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFX64N50Q3 IXFX64N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_64n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFK80N50Q3 IXFK80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.65 EUR
10+ 55.02 EUR
IXFX80N50Q3 IXFX80N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.13 EUR
10+ 46.33 EUR
100+ 40.52 EUR
IXFN100N50Q3 IXFN100N50Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn100n50q3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+93.14 EUR
IXFR64N60Q3 IXFR64N60Q3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n60q3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 42A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 32A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
Produkt ist nicht verfügbar
LDS8720 LDS8720-Datasheet-_Rev-N1_1.pdf
LDS8720
Hersteller: IXYS
Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
LDS8711 LDS8711-Datasheet-_Rev-N1_0.pdf
LDS8711
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 8TDFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
LDS8724 LDS8724-Datasheet-_Rev-N1_0.pdf
LDS8724
Hersteller: IXYS
Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
LDS8711 LDS8711-Datasheet-_Rev-N1_0.pdf
LDS8711
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 8TDFN
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
LDS8711 LDS8711-Datasheet-_Rev-N1_0.pdf
LDS8711
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 8TDFN
Produkt ist nicht verfügbar
LDS8724 LDS8724-Datasheet-_Rev-N1_0.pdf
LDS8724
Hersteller: IXYS
Description: IC LED DRVR RGLTR DIM 1.9A 8TDFN
Produkt ist nicht verfügbar
IXTF1N400 DS100159D(IXTF1N400).pdf
IXTF1N400
Hersteller: IXYS
Description: MOSFET N-CH 4000V 1A ISOPLUS I4
Produkt ist nicht verfügbar
IXTH16N10D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n10_datasheet.pdf.pdf
IXTH16N10D2
Hersteller: IXYS
Description: MOSFET N-CH 100V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.16 EUR
10+ 25.87 EUR
25+ 24.79 EUR
IXTH16N20D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n20_datasheet.pdf.pdf
IXTH16N20D2
Hersteller: IXYS
Description: MOSFET N-CH 200V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.61 EUR
30+ 26.4 EUR
IXTT16N10D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n10_datasheet.pdf.pdf
IXTT16N10D2
Hersteller: IXYS
Description: MOSFET N-CH 100V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 830W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+23.09 EUR
10+ 21.21 EUR
25+ 20.34 EUR
100+ 17.92 EUR
250+ 17.04 EUR
IXTT16N20D2 littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_16n20_datasheet.pdf.pdf
IXTT16N20D2
Hersteller: IXYS
Description: MOSFET N-CH 200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Supplier Device Package: TO-268AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
IXGF30N400 littelfuse_discrete_igbts_npt_ixgf30n400_datasheet.pdf.pdf
IXGF30N400
Hersteller: IXYS
Description: IGBT 4000V 30A 160W I4-PAK
Produkt ist nicht verfügbar
IXXK100N60B3H1 IXXK%2CX100N60B3H1.pdf
IXXK100N60B3H1
Hersteller: IXYS
Description: IGBT PT 600V 200A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+41.5 EUR
25+ 34.41 EUR
100+ 32.26 EUR
IXXH100N60B3 littelfuse_discrete_igbts_xpt_ixxh100n60b3_datasheet.pdf.pdf
IXXH100N60B3
Hersteller: IXYS
Description: IGBT 600V 220A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 830 W
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+25.19 EUR
IXXH50N60C3 littelfuse_discrete_igbts_xpt_ixxh50n60c3_datasheet.pdf.pdf
IXXH50N60C3
Hersteller: IXYS
Description: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH50N60C3D1 littelfuse_discrete_igbts_xpt_ixxh50n60c3d1_datasheet.pdf.pdf
IXXH50N60C3D1
Hersteller: IXYS
Description: IGBT 600V 100A 600W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
Produkt ist nicht verfügbar
IXXH100N60C3 littelfuse_discrete_igbts_xpt_ixxh100n60c3_datasheet.pdf.pdf
IXXH100N60C3
Hersteller: IXYS
Description: IGBT 600V 190A 830W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 830 W
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.81 EUR
IXXK100N60C3H1 littelfuse_discrete_igbts_xpt_ixx_100n60c3h1_datasheet.pdf.pdf
IXXK100N60C3H1
Hersteller: IXYS
Description: IGBT PT 600V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 340 A
Power - Max: 695 W
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+41.5 EUR
25+ 34.41 EUR
100+ 32.26 EUR
IXTA130N10T-TRL DS99649B(IXTA-TP130N10T).pdf
IXTA130N10T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXFA4N100Q-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp4n100q_datasheet.pdf.pdf
IXFA4N100Q-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
DEIC421 deic421.pdf
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE DE275
Packaging: Bulk
Package / Case: 7-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 30V
Input Type: Inverting
Supplier Device Package: 7-SMD
Rise / Fall Time (Typ): 3ns, 3ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 20A, 20A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IXFQ60N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_60n50p3_datasheet.pdf.pdf
IXFQ60N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.09 EUR
10+ 13.78 EUR
Mindestbestellmenge: 2
IXFT60N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_60n50p3_datasheet.pdf.pdf
IXFT60N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 60A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.2 EUR
IXFK78N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_78n50p3_datasheet.pdf.pdf
IXFK78N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Produkt ist nicht verfügbar
IXFX78N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_78n50p3_datasheet.pdf.pdf
IXFX78N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 78A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+22.16 EUR
30+ 17.93 EUR
120+ 16.88 EUR
510+ 15.29 EUR
IXFQ28N60P3 IXFx28N60P3.pdf
IXFQ28N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 28A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V
Produkt ist nicht verfügbar
IXFH22N60P3 IXFx22N60P3.pdf
IXFH22N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 22A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
IXFP22N60P3 IXFx22N60P3.pdf
IXFP22N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.8 EUR
50+ 6.98 EUR
100+ 5.98 EUR
500+ 5.32 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 2
IXFQ22N60P3 IXFx22N60P3.pdf
IXFQ22N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
IXFH42N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh42n60p3_datasheet.pdf.pdf
IXFH42N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 42A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
Produkt ist nicht verfügbar
IXYH82N120C3 littelfuse_discrete_igbts_xpt_ixyh82n120c3_datasheet.pdf.pdf
IXYH82N120C3
Hersteller: IXYS
Description: IGBT 1200V 200A 1250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
IXYN82N120C3H1 littelfuse_discrete_igbts_xpt_ixyn82n120c3h1_datasheet.pdf.pdf
IXYN82N120C3H1
Hersteller: IXYS
Description: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
Produkt ist nicht verfügbar
IXYB82N120C3H1 littelfuse_discrete_igbts_xpt_ixyb82n120c3h1_datasheet.pdf.pdf
IXYB82N120C3H1
Hersteller: IXYS
Description: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
Produkt ist nicht verfügbar
SLMD121H4 20110107-SLMD121H04-DATA-SHEET.pdf
SLMD121H4
Hersteller: IXYS
Description: MONO SOLAR CELL 43MM X 14MM
Produkt ist nicht verfügbar
SLMD121H8L 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD121H8L
Hersteller: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
SLMD600H10 20110107-SLMD600H10-DATA-SHEET.pdf
SLMD600H10
Hersteller: IXYS
Description: MONO SOLAR CELL 22MM X 35MM
Produkt ist nicht verfügbar
SLMD960H12 20110107-SLMD960H12-SLMD4235-DATA-SHEET.pdf
SLMD960H12
Hersteller: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
auf Bestellung 652 Stücke:
Lieferzeit 10-14 Tag (e)
SLMD121H10 20110107-SLMD121H10-DATA-SHEET.pdf
SLMD121H10
Hersteller: IXYS
Description: MONO SOLAR CELL 42MM X 35MM
Produkt ist nicht verfügbar
SLMD481H08 20110107-SLMD121H08-DATA-SHEET.pdf
SLMD481H08
Hersteller: IXYS
Description: MONO SOLAR CELL 86MM X 14MM
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
SLMD481H10 20111214-SLMD481H10-DATA-SHEET.pdf
SLMD481H10
Hersteller: IXYS
Description: MONO SOLAR CELL 89MM X 67MM
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
SLMD481H12 20111214-SLMD481H12-DATA-SHEET.pdf
SLMD481H12
Hersteller: IXYS
Description: MONO SOLAR CELL 90MM X 79MM
Produkt ist nicht verfügbar
IXFH70N20Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n20q3_datasheet.pdf.pdf
IXFH70N20Q3
Hersteller: IXYS
Description: MOSFET N-CH 200V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Produkt ist nicht verfügbar
IXFT70N20Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n20q3_datasheet.pdf.pdf
IXFT70N20Q3
Hersteller: IXYS
Description: MOSFET N-CH 200V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 35A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Produkt ist nicht verfügbar
IXFH50N30Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_50n30q3_datasheet.pdf.pdf
IXFH50N30Q3
Hersteller: IXYS
Description: MOSFET N-CH 300V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
auf Bestellung 2742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.51 EUR
30+ 17.41 EUR
120+ 16.39 EUR
510+ 14.85 EUR
1020+ 13.62 EUR
IXFT50N30Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_50n30q3_datasheet.pdf.pdf
IXFT50N30Q3
Hersteller: IXYS
Description: MOSFET N-CH 300V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 25 V
Produkt ist nicht verfügbar
IXFT70N30Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_70n30q3_datasheet.pdf.pdf
IXFT70N30Q3
Hersteller: IXYS
Description: MOSFET N-CH 300V 70A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 35A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 25 V
Produkt ist nicht verfügbar
IXFB100N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb100n50q3_datasheet.pdf.pdf
IXFB100N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 100A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 1560W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.64 EUR
10+ 64.98 EUR
IXFR44N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr44n50q3_datasheet.pdf.pdf
IXFR44N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 22A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFT30N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50q3_datasheet.pdf.pdf
IXFT30N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.29 EUR
10+ 21.39 EUR
100+ 18.5 EUR
IXFH44N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n50q3_datasheet.pdf.pdf
IXFH44N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.72 EUR
30+ 27.3 EUR
120+ 25.69 EUR
IXFT44N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_44n50q3_datasheet.pdf.pdf
IXFT44N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXFR64N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n50q3_datasheet.pdf.pdf
IXFR64N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 45A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFR80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr80n50q3_datasheet.pdf.pdf
IXFR80N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+65.14 EUR
10+ 60.08 EUR
100+ 51.3 EUR
IXFN80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q3_datasheet.pdf.pdf
IXFN80N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 63A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
IXFK64N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_64n50q3_datasheet.pdf.pdf
IXFK64N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFX64N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_64n50q3_datasheet.pdf.pdf
IXFX64N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 25 V
Produkt ist nicht verfügbar
IXFK80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf
IXFK80N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+59.65 EUR
10+ 55.02 EUR
IXFX80N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n50q3_datasheet.pdf.pdf
IXFX80N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+52.13 EUR
10+ 46.33 EUR
100+ 40.52 EUR
IXFN100N50Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn100n50q3_datasheet.pdf.pdf
IXFN100N50Q3
Hersteller: IXYS
Description: MOSFET N-CH 500V 82A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+93.14 EUR
IXFR64N60Q3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr64n60q3_datasheet.pdf.pdf
IXFR64N60Q3
Hersteller: IXYS
Description: MOSFET N-CH 600V 42A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 32A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9930 pF @ 25 V
Produkt ist nicht verfügbar
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