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DNA30E2200PC DNA30E2200PC IXYS DNA30E2200PC.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30E2200PC-TUB DNA30E2200PC-TUB IXYS DNA30E2200PC.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DNA30EM2200PC DNA30EM2200PC IXYS Rectifier%20diodes%20ad.pdf Description: DIODE GEN PURP 2.2KV 30A TO263
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Description: DIODE GEN PURP 300V 30A TO220AC
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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Description: DIODE ARRAY GP 300V 30A TO247AD
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DPF80C200HB DPF80C200HB IXYS DPF80C200HB.pdf Description: DIODE ARRAY GP 200V 40A TO247AD
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DPG10P400PJ DPG10P400PJ IXYS DPG10P400PJ.pdf Description: DIODE ARRAY 400V 10A ISOPLUS220
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DPG20C400PC DPG20C400PC IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
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DPG30I400HA DPG30I400HA IXYS media?resourcetype=datasheets&itemid=F5BD21A0-B8BC-47F9-9C45-DBE5D3D626C4&filename=Littelfuse-Power-Semiconductors-DPG30I400HA-Datasheet Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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DPG30IM300PC DPG30IM300PC IXYS DPG30IM300PC.pdf Description: DIODE GEN PURP 300V 30A TO263
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DPG30P300PJ DPG30P300PJ IXYS media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet Description: DIODE ARR GP 300V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG80C300HB DPG80C300HB IXYS DPG80C300HB.pdf Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1930 Stücke:
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2+13.06 EUR
10+11.8 EUR
100+9.77 EUR
500+8.51 EUR
1000+7.99 EUR
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DPG80C400HB DPG80C400HB IXYS media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet Description: DIODE ARRAY GP 400V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 290 Stücke:
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2+10.47 EUR
30+8.03 EUR
Mindestbestellmenge: 2
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DSA10C150PB DSA10C150PB IXYS DSA10C150PB.pdf Description: DIODE ARRAY SCHOTTKY 150V TO220
Produkt ist nicht verfügbar
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DSA120X150LB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
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DSA120X150LB-TRR DSA120X150LB-TRR IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
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DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Description: DIODE SCHOTTKY 200V 15A TO252
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DSA240X150NA DSA240X150NA IXYS Littelfuse-Power-Semiconductors-DSA240X150NA-Datasheet?assetguid=34D8D74B-7E13-48DA-859A-692F9F387798 Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
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DSA240X200NA DSA240X200NA IXYS media?resourcetype=datasheets&itemid=CE211326-2290-46CD-AA2E-D3BA6ABAE2CD&filename=Littelfuse-Power-Semiconductors-DSA240X200NA-Datasheet Description: DIODE MOD SCHOTTKY 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
Produkt ist nicht verfügbar
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DSA300I100NA DSA300I100NA IXYS DSA300I100NA.pdf Description: DIODE SCHOTTKY 100V 300A SOT227B
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DSA300I200NA DSA300I200NA IXYS DSA300I200NA.pdf Description: DIODE SCHOTTKY 200V 300A SOT227B
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DSA300I45NA DSA300I45NA IXYS DSA300I45NA.pdf Description: DIODE SCHOTTKY 45V 300A SOT227B
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DSA30C200IB IXYS media?resourcetype=datasheets&itemid=c2875b0d-6334-47c0-b30e-acefc04d73e3&filename=Power-Semiconductor-Discrete-Diode-DSA30C200IB-Datasheet Description: DIODE ARRAY SCHOT 200V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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DSA30C45PC-TRL DSA30C45PC-TRL IXYS DSA30C45PC.pdf Description: DIODE ARRAY SCHOTTKY 45V TO263
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DSA60C150PB DSA60C150PB IXYS media?resourcetype=datasheets&itemid=f0b4e02a-ac2b-46dd-a3c2-38c5bd331e30&filename=Power-Semiconductor-Discrete-Diode-DSA60C150PB-Datasheet Description: DIODE ARR SCHOT 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 150 V
auf Bestellung 40 Stücke:
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4+4.66 EUR
10+3.91 EUR
Mindestbestellmenge: 4
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DSA70C200HB DSA70C200HB IXYS media?resourcetype=datasheets&itemid=2f23a350-9ed9-4968-92ba-b4f6ed072234&filename=Power-Semiconductor-Discrete-Diode-DSA70C200HB-Datasheet Description: DIODE ARR SCHOT 200V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 35 A
Current - Reverse Leakage @ Vr: 640 µA @ 200 V
Produkt ist nicht verfügbar
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DSA90C200HR DSA90C200HR IXYS DSA90C200HR.pdf Description: DIODE ARRAY SCHOTTKY 200V ISO247
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DSB60C30PB DSB60C30PB IXYS DSB60C30PB.pdf Description: DIODE ARRAY SCHOTTKY 30V TO220AB
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DSEC16-12AS DSEC16-12AS IXYS DSEC16-12AS.pdf Description: DIODE ARRAY GP 1200V 10A TO263AB
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DSEC16-12AS-TUB DSEC16-12AS-TUB IXYS DSEC16-12AS.pdf Description: DIODE ARRAY GP 1200V 10A TO263AB
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DSEI19-06AS-TUB DSEI19-06AS-TUB IXYS Littelfuse-Power-Semiconductors-DSEI19-06AS-Datasheet?assetguid=f95dc4da-656a-4d9e-be26-3e2c5c871413 Description: DIODE STANDARD 600V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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DSP8-08AS-TUB DSP8-08AS-TUB IXYS media?resourcetype=datasheets&itemid=0d1887aa-022d-4c13-a29c-7dec3225315c&filename=Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1155 Stücke:
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5+3.85 EUR
50+3.06 EUR
100+2.62 EUR
500+2.56 EUR
Mindestbestellmenge: 5
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DSS10-01AS-TUB DSS10-01AS-TUB IXYS DSS10-01AS_2021.pdf Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DSS16-0045AS-TUB DSS16-0045AS-TUB IXYS Description: DIODE SCHOTTKY 45V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
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DSS16-01AS-TUB DSS16-01AS-TUB IXYS Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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DSSK28-006BS-TRL DSSK28-006BS-TRL IXYS media?resourcetype=datasheets&itemid=cd7e5fd6-48f8-4402-b5a6-9f4f50e2e1f1&filename=Power-Semiconductor-Discrete-Diode-DSSK28-006BS-Datasheet Description: DIODE ARR SCHOTT 60V 15A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Produkt ist nicht verfügbar
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FDM15-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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FDM47-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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FMD15-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.92 EUR
10+26.37 EUR
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FMD47-06KC5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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GMM3X100-01X1-SMD IXYS Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X100-01X1-SMDSAM IXYS Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X120-0075X2-SMDSAM IXYS Description: MOSFET 6N-CH 75V 110A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X160-0055X2-SMD IXYS Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X160-0055X2-SMDSAM IXYS Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X180-004X2-SMD IXYS Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X180-004X2-SMDSAM IXYS GMM3x180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3x60-015X2-SMD IXYS Littelfuse-Power-Semiconductors-GMM3x60-015X2-Datasheet?assetguid=6be8466a-6b8d-456f-b670-6c5529d92fdf Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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GMM3x60-015X2-SMDSAM IXYS Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
Produkt ist nicht verfügbar
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GUO40-08NO1 GUO40-08NO1 IXYS GUO40-08NO1.pdf Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
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GWM180-004X2-SL IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
Produkt ist nicht verfügbar
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GWM180-004X2-SLSAM IXYS Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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GWM180-004X2-SMD IXYS GWM180-004X2.pdf Description: MOSFET 6N-CH 40V 180A 17-SMD
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GWM180-004X2-SMDSAM IXYS Description: MOSFET 6N-CH 40V 180A 17-SMD
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IXA12IF1200HB IXA12IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
auf Bestellung 438 Stücke:
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3+8.27 EUR
30+6.56 EUR
120+5.62 EUR
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IXA12IF1200PB IXA12IF1200PB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
Produkt ist nicht verfügbar
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IXA12IF1200TC-TUB IXA12IF1200TC-TUB IXYS littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
auf Bestellung 1560 Stücke:
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300+7.08 EUR
Mindestbestellmenge: 300
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IXA17IF1200HJ IXA17IF1200HJ IXYS littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
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IXA20I1200PB IXA20I1200PB IXYS littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
auf Bestellung 109 Stücke:
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2+15.26 EUR
50+8.43 EUR
100+7.77 EUR
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IXA20IF1200HB IXA20IF1200HB IXYS littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf Description: IGBT 1200V 38A 165W TO247
Produkt ist nicht verfügbar
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DNA30E2200PC DNA30E2200PC.pdf
DNA30E2200PC
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Produkt ist nicht verfügbar
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DNA30E2200PC-TUB DNA30E2200PC.pdf
DNA30E2200PC-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Produkt ist nicht verfügbar
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DNA30EM2200PC Rectifier%20diodes%20ad.pdf
DNA30EM2200PC
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263
Produkt ist nicht verfügbar
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DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Hersteller: IXYS
Description: DIODE GEN PURP 300V 30A TO220AC
Produkt ist nicht verfügbar
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DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 30A TO247AD
Produkt ist nicht verfügbar
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DPF80C200HB DPF80C200HB.pdf
DPF80C200HB
Hersteller: IXYS
Description: DIODE ARRAY GP 200V 40A TO247AD
Produkt ist nicht verfügbar
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DPG10P400PJ DPG10P400PJ.pdf
DPG10P400PJ
Hersteller: IXYS
Description: DIODE ARRAY 400V 10A ISOPLUS220
Produkt ist nicht verfügbar
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DPG20C400PC DPG20C400PC.pdf
DPG20C400PC
Hersteller: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
Produkt ist nicht verfügbar
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DPG30I400HA media?resourcetype=datasheets&itemid=F5BD21A0-B8BC-47F9-9C45-DBE5D3D626C4&filename=Littelfuse-Power-Semiconductors-DPG30I400HA-Datasheet
DPG30I400HA
Hersteller: IXYS
Description: DIODE GEN PURP 400V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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DPG30IM300PC DPG30IM300PC.pdf
DPG30IM300PC
Hersteller: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Produkt ist nicht verfügbar
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DPG30P300PJ media?resourcetype=datasheets&itemid=4BEC0773-2CA1-4DE0-8566-CFFCAC47A849&filename=Littelfuse-Power-Semiconductors-DPG30P300PJ-Datasheet
DPG30P300PJ
Hersteller: IXYS
Description: DIODE ARR GP 300V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG80C300HB DPG80C300HB.pdf
DPG80C300HB
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.06 EUR
10+11.8 EUR
100+9.77 EUR
500+8.51 EUR
1000+7.99 EUR
Mindestbestellmenge: 2
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DPG80C400HB media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet
DPG80C400HB
Hersteller: IXYS
Description: DIODE ARRAY GP 400V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 40 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 290 Stücke:
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Anzahl Preis
2+10.47 EUR
30+8.03 EUR
Mindestbestellmenge: 2
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DSA10C150PB DSA10C150PB.pdf
DSA10C150PB
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO220
Produkt ist nicht verfügbar
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DSA120X150LB DSA120X150LB.pdf
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Produkt ist nicht verfügbar
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DSA120X150LB-TRR DSA120X150LB.pdf
DSA120X150LB-TRR
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
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DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Hersteller: IXYS
Description: DIODE SCHOTTKY 200V 15A TO252
Produkt ist nicht verfügbar
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DSA240X150NA Littelfuse-Power-Semiconductors-DSA240X150NA-Datasheet?assetguid=34D8D74B-7E13-48DA-859A-692F9F387798
DSA240X150NA
Hersteller: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
Produkt ist nicht verfügbar
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DSA240X200NA media?resourcetype=datasheets&itemid=CE211326-2290-46CD-AA2E-D3BA6ABAE2CD&filename=Littelfuse-Power-Semiconductors-DSA240X200NA-Datasheet
DSA240X200NA
Hersteller: IXYS
Description: DIODE MOD SCHOTTKY 200V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 120 A
Current - Reverse Leakage @ Vr: 4 mA @ 200 V
Produkt ist nicht verfügbar
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DSA300I100NA DSA300I100NA.pdf
DSA300I100NA
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 300A SOT227B
Produkt ist nicht verfügbar
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DSA300I200NA DSA300I200NA.pdf
DSA300I200NA
Hersteller: IXYS
Description: DIODE SCHOTTKY 200V 300A SOT227B
Produkt ist nicht verfügbar
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DSA300I45NA DSA300I45NA.pdf
DSA300I45NA
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 300A SOT227B
Produkt ist nicht verfügbar
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DSA30C200IB media?resourcetype=datasheets&itemid=c2875b0d-6334-47c0-b30e-acefc04d73e3&filename=Power-Semiconductor-Discrete-Diode-DSA30C200IB-Datasheet
Hersteller: IXYS
Description: DIODE ARRAY SCHOT 200V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-262 (I2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
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DSA30C45PC-TRL DSA30C45PC.pdf
DSA30C45PC-TRL
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 45V TO263
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DSA60C150PB media?resourcetype=datasheets&itemid=f0b4e02a-ac2b-46dd-a3c2-38c5bd331e30&filename=Power-Semiconductor-Discrete-Diode-DSA60C150PB-Datasheet
DSA60C150PB
Hersteller: IXYS
Description: DIODE ARR SCHOT 150V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 150 V
auf Bestellung 40 Stücke:
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Anzahl Preis
4+4.66 EUR
10+3.91 EUR
Mindestbestellmenge: 4
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DSA70C200HB media?resourcetype=datasheets&itemid=2f23a350-9ed9-4968-92ba-b4f6ed072234&filename=Power-Semiconductor-Discrete-Diode-DSA70C200HB-Datasheet
DSA70C200HB
Hersteller: IXYS
Description: DIODE ARR SCHOT 200V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 35 A
Current - Reverse Leakage @ Vr: 640 µA @ 200 V
Produkt ist nicht verfügbar
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DSA90C200HR DSA90C200HR.pdf
DSA90C200HR
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 200V ISO247
auf Bestellung 60 Stücke:
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DSB60C30PB DSB60C30PB.pdf
DSB60C30PB
Hersteller: IXYS
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
Produkt ist nicht verfügbar
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DSEC16-12AS DSEC16-12AS.pdf
DSEC16-12AS
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AB
Produkt ist nicht verfügbar
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DSEC16-12AS-TUB DSEC16-12AS.pdf
DSEC16-12AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AB
Produkt ist nicht verfügbar
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DSEI19-06AS-TUB Littelfuse-Power-Semiconductors-DSEI19-06AS-Datasheet?assetguid=f95dc4da-656a-4d9e-be26-3e2c5c871413
DSEI19-06AS-TUB
Hersteller: IXYS
Description: DIODE STANDARD 600V 20A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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DSP8-08AS-TUB media?resourcetype=datasheets&itemid=0d1887aa-022d-4c13-a29c-7dec3225315c&filename=Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet
DSP8-08AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Tube
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 1155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
50+3.06 EUR
100+2.62 EUR
500+2.56 EUR
Mindestbestellmenge: 5
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DSS10-01AS-TUB DSS10-01AS_2021.pdf
DSS10-01AS-TUB
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DSS16-0045AS-TUB
DSS16-0045AS-TUB
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
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DSS16-01AS-TUB
DSS16-01AS-TUB
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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DSSK28-006BS-TRL media?resourcetype=datasheets&itemid=cd7e5fd6-48f8-4402-b5a6-9f4f50e2e1f1&filename=Power-Semiconductor-Discrete-Diode-DSSK28-006BS-Datasheet
DSSK28-006BS-TRL
Hersteller: IXYS
Description: DIODE ARR SCHOTT 60V 15A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Produkt ist nicht verfügbar
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FDM15-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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FDM47-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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FMD15-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__15-06kc5_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.92 EUR
10+26.37 EUR
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FMD47-06KC5 littelfuse_discrete_mosfets_n-channel_super_junction_multi-chip_config_f__47-06kc5_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 47A I4PAC
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS i4-PAC™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Produkt ist nicht verfügbar
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GMM3X100-01X1-SMD
Hersteller: IXYS
Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X100-01X1-SMDSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 100V 90A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X120-0075X2-SMDSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 110A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Part Status: Active
Produkt ist nicht verfügbar
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GMM3X160-0055X2-SMD
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X160-0055X2-SMDSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X180-004X2-SMD
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3X180-004X2-SMDSAM GMM3x180-004X2.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A 24SMD
Packaging: Tube
Package / Case: 24-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 24-SMD
Produkt ist nicht verfügbar
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GMM3x60-015X2-SMD Littelfuse-Power-Semiconductors-GMM3x60-015X2-Datasheet?assetguid=6be8466a-6b8d-456f-b670-6c5529d92fdf
Hersteller: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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GMM3x60-015X2-SMDSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 150V 50A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
Produkt ist nicht verfügbar
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GUO40-08NO1 GUO40-08NO1.pdf
GUO40-08NO1
Hersteller: IXYS
Description: BRIDGE RECT 3PHASE 800V 40A GUFP
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33 EUR
10+29.34 EUR
100+25.66 EUR
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GWM180-004X2-SL GWM180-004X2.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
Produkt ist nicht verfügbar
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GWM180-004X2-SLSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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GWM180-004X2-SMD GWM180-004X2.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
Produkt ist nicht verfügbar
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GWM180-004X2-SMDSAM
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A 17-SMD
Produkt ist nicht verfügbar
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IXA12IF1200HB littelfuse_discrete_igbts_xpt_ixa12if1200hb_datasheet.pdf.pdf
IXA12IF1200HB
Hersteller: IXYS
Description: IGBT 1200V 20A 85W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.27 EUR
30+6.56 EUR
120+5.62 EUR
Mindestbestellmenge: 3
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IXA12IF1200PB littelfuse_discrete_igbts_xpt_ixa12if1200pb_datasheet.pdf.pdf
IXA12IF1200PB
Hersteller: IXYS
Description: IGBT PT 1200V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
Produkt ist nicht verfügbar
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IXA12IF1200TC-TUB littelfuse_discrete_igbts_xpt_ixa12if1200tc_datasheet.pdf.pdf
IXA12IF1200TC-TUB
Hersteller: IXYS
Description: IGBT PT 1200V 20A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-268AA
IGBT Type: PT
Switching Energy: 1.1mJ (on), 1.1mJ (off)
Test Condition: 600V, 10A, 100Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 85 W
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+7.08 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IXA17IF1200HJ littelfuse_discrete_igbts_xpt_ixa17if1200hj_datasheet.pdf.pdf
IXA17IF1200HJ
Hersteller: IXYS
Description: IGBT 1200V 28A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXA20I1200PB littelfuse_discrete_igbts_xpt_ixa20i1200pb_datasheet.pdf.pdf
IXA20I1200PB
Hersteller: IXYS
Description: IGBT PT 1200V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Switching Energy: 1.65mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.26 EUR
50+8.43 EUR
100+7.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXA20IF1200HB littelfuse_discrete_igbts_xpt_ixa20if1200hb_datasheet.pdf.pdf
IXA20IF1200HB
Hersteller: IXYS
Description: IGBT 1200V 38A 165W TO247
Produkt ist nicht verfügbar
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