IXTP1N80P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: TO220AB
On-state resistance: 14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 42W
Features of semiconductor devices: standard power mosfet
Gate charge: 9nC
Reverse recovery time: 700ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTP1N80P IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 1A, Case: TO220AB, On-state resistance: 14Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Power dissipation: 42W, Features of semiconductor devices: standard power mosfet, Gate charge: 9nC, Reverse recovery time: 700ns, Anzahl je Verpackung: 1 Stücke.
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IXTP1N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO220AB; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Case: TO220AB On-state resistance: 14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 42W Features of semiconductor devices: standard power mosfet Gate charge: 9nC Reverse recovery time: 700ns |
Produkt ist nicht verfügbar |