IXTP60N20T IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 40mΩ
Reverse recovery time: 118ns
Mounting: THT
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.72 EUR |
| 11+ | 8.08 EUR |
| 25+ | 6.58 EUR |
| 50+ | 5.45 EUR |
| 100+ | 5.33 EUR |
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Technische Details IXTP60N20T IXYS
Description: MOSFET N-CH 200V 60A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.
Weitere Produktangebote IXTP60N20T nach Preis ab 6.58 EUR bis 14.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTP60N20T | IXYS |
Description: MOSFET N-CH 200V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP60N20T | IXYS |
MOSFETs Trench POWER MOSFETs 200v, 60A |
auf Bestellung 66 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP60N20T |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Description: MOSFET N-CH 200V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.4 EUR |
| 50+ | 7.19 EUR |
| 100+ | 6.58 EUR |
| IXTP60N20T |
|
Hersteller: IXYS
MOSFETs Trench POWER MOSFETs 200v, 60A
MOSFETs Trench POWER MOSFETs 200v, 60A
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.71 EUR |
| 10+ | 8.07 EUR |
| 100+ | 7.14 EUR |