.jpg "IXGX82N120B3")
IXGX82N120B3 IXYS
Hersteller: IXYS
Description: IGBT 1200V 230A 1250W PLUS247
Current - Collector (Ic) (Max): 230 A
Part Status: Active
Gate Charge: 350 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5mJ (on), 3.3mJ (off)
Td (on/off) @ 25°C: 30ns/210ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
Current - Collector Pulsed (Icm): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IXGX82N120B3 IXYS
Description: IGBT 1200V 230A 1250W PLUS247, Current - Collector (Ic) (Max): 230 A, Part Status: Active, Gate Charge: 350 nC, Test Condition: 600V, 80A, 2Ohm, 15V, Switching Energy: 5mJ (on), 3.3mJ (off), Td (on/off) @ 25°C: 30ns/210ns, IGBT Type: PT, Supplier Device Package: PLUS247™-3, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A, Input Type: Standard, Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Power - Max: 1250 W, Current - Collector Pulsed (Icm): 500 A, Voltage - Collector Emitter Breakdown (Max): 1200 V.
Weitere Produktangebote IXGX82N120B3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXGX82N120B3 | IXYS |
 IGBTs GenX3 1200V IGBTs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXGX82N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGX82N120B3 |
|
Hersteller: IXYS
IGBTs GenX3 1200V IGBTs
IGBTs GenX3 1200V IGBTs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXGX82N120B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH