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IXXN100N60B3H1 IXXN100N60B3H1 IXYS DS100421BIXXN100N60B3H1.pdf Description: IGBT MOD 600V 170A 500W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V
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IXBL64N250 IXBL64N250 IXYS littelfuse_discrete_igbts_bimosfet_ixbl64n250_datasheet.pdf.pdf Description: IGBT 2500V 116A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: ISOPLUSi5-Pak™
Gate Charge: 400 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 500 W
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SLMD121H04L SLMD121H04L IXYS SLMD121H04L_Nov16.pdf Description: MONOCRYSTL SOLAR CELL 89MW 2.52V
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SLMD121H08L SLMD121H08L IXYS SLMD121H08L_Nov16.pdf Description: MONOCRYST SOLAR CELL 178MW 5.04V
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SLMD481H08L SLMD481H08L IXYS SLMD481H08L_nov16.pdf Description: MONOCRYST SOLAR CELL 714MW 5.04V
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IXGT4N250C IXGT4N250C IXYS DS100320(IXGH-GT4N250C).pdf Description: IGBT 2500V 13A 150W TO268
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IXBT24N170 IXBT24N170 IXYS DS100190A(IXBH-BT24N170).pdf Description: IGBT 1700V 60A 250W TO268
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IXFA14N60P3 IXFA14N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA20N50P3 IXFA20N50P3 IXYS 171448803littelfusediscretemosfetsnchannelhiperfetsix.pdf Description: MOSFET N-CH 500V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IXFA230N075T2 IXFA230N075T2 IXYS DS100074A(IXFA-FP230N075T2).pdf Description: MOSFET N-CH 75V 230A TO-263AA
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IXFA4N60P3 IXFA4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO263
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IXFA5N100P IXFA5N100P IXYS littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811 Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH120N25T IXFH120N25T IXYS media?resourcetype=datasheets&itemid=FCE667A0-AE55-40BC-BAC0-EAB7DA190E7D&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-120N25T-Datasheet.PDF Description: MOSFET N-CH 250V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH14N60P3 IXFH14N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH150N20T IXFH150N20T IXYS DS100426IXFTH150N20T.pdf Description: MOSFET N-CH 200V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
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IXFH160N15T2 IXFH160N15T2 IXYS DS100228AIXFH160N15T2.pdf Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
auf Bestellung 1041 Stücke:
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30+8.84 EUR
120+7.49 EUR
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IXFH20N50P3 IXFH20N50P3 IXYS littelfuse-discrete-mosfets-ixf-20n50p3-datasheet?assetguid=17d5b834-f5fe-4724-bef9-f55d728d93a8 Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 277 Stücke:
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30+6.52 EUR
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IXFH86N30T IXFH86N30T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf Description: MOSFET N-CH 300V 86A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 43A, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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IXFH94N30T IXFH94N30T IXYS DS100383A(IXFH-T94N30T).pdf Description: MOSFET N-CH 300V 94A TO247AD
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IXFK32N90P IXYS DS100387(IXFK-FX32N90P).pdf Description: MOSFET N-CH 900V 32A TO-264
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IXFL132N50P3 IXFL132N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl132n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 63A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN140N25T IXFN140N25T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn140n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 120A SOT227B
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IXFN80N60P3 IXFN80N60P3 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN80N60P3-Datasheet.PDF?assetguid=9434A8A1-B967-4231-AB2B-1058CFA96F61 Description: MOSFET N-CH 600V 66A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 124 Stücke:
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1+54.6 EUR
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IXFP110N15T2 IXFP110N15T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf Description: MOSFET N-CH 150V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP130N10T2 IXFP130N10T2 IXYS littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3 Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFP14N60P3 IXFP14N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP20N50P3M IXFP20N50P3M IXYS DS100415AIXFP20N50P3M.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP26N50P3 IXFP26N50P3 IXYS littelfuse-discrete-mosfets-ixf-26n50p3-datasheet?assetguid=a8b0d040-1523-4949-9cf7-d162b9eed257 Description: MOSFET N-CH 500V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
auf Bestellung 150 Stücke:
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2+15.19 EUR
50+8.43 EUR
100+7.78 EUR
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IXFP4N60P3 IXFP4N60P3 IXYS Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ20N50P3 IXFQ20N50P3 IXYS littelfuse-discrete-mosfets-ixf-20n50p3-datasheet?assetguid=17d5b834-f5fe-4724-bef9-f55d728d93a8 Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IXFR230N20T IXFR230N20T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfr230n20t_datasheet.pdf.pdf Description: MOSFET N-CH 200V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR58N20 IXFR58N20 IXYS 98591.pdf Description: MOSFET N-CH 200V 50A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR80N60P3 IXFR80N60P3 IXYS media?resourcetype=datasheets&itemid=009C6FF2-024A-4E5F-BFDB-8F99ACAA6258&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR80N60P3-Datasheet.PDF Description: MOSFET N-CH 600V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 40A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT150N20T IXFT150N20T IXYS Description: MOSFET N-CH 200V 150A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT320N10T2 IXFT320N10T2 IXYS littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT94N30T IXFT94N30T IXYS DS100383A(IXFH-T94N30T).pdf Description: MOSFET N-CH 300V 94A TO268
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IXFX250N10P IXFX250N10P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_250n10p_datasheet.pdf.pdf Description: MOSFET N-CH 100V 250A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFY4N60P3 IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO252
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IXFZ520N075T2 IXFZ520N075T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixfz520n075t2_datasheet.pdf.pdf Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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IXGA12N120A3 IXGA12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXGA20N120B3 IXGA20N120B3 IXYS littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff Description: IGBT PT 1200V 36A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
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IXGA50N60C4 IXGA50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO263
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IXGH12N120A3 IXGH12N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf Description: IGBT 1200V 22A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXGH20N140C3H1 IXGH20N140C3H1 IXYS littelfuse_discrete_igbts_pt_ixg_20n140c3h1_datasheet.pdf.pdf Description: IGBT 1400V 42A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/110ns
Switching Energy: 1.35mJ (on), 440µJ (off)
Test Condition: 700V, 20A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 250 W
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IXGH24N60C4 IXGH24N60C4 IXYS Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH24N60C4D1 IXGH24N60C4D1 IXYS Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
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IXGH28N140B3H1 IXGH28N140B3H1 IXYS littelfuse_discrete_igbts_pt_ixg_28n140b3h1_datasheet.pdf.pdf Description: IGBT 1400V 60A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
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IXGH30N60B4 IXGH30N60B4 IXYS Description: IGBT PT 600V 66A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 440µJ (on), 700µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXGH36N60A3 IXGH36N60A3 IXYS littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
Produkt ist nicht verfügbar
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IXGH36N60B3 IXGH36N60B3 IXYS littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8 Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 110 Stücke:
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2+8.96 EUR
30+5.07 EUR
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IXGH50N60C4 IXGH50N60C4 IXYS DS100298C(IXGA-P-H50N60C4).pdf Description: IGBT 600V 90A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/270ns
Switching Energy: 950µJ (on), 840µJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 113 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGH56N60A3 IXGH56N60A3 IXYS littelfuse-discrete-igbts-ixgh56n60a3-datasheet?assetguid=36f75a5a-a641-4d71-802a-ec49621c881d Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
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IXGH56N60B3D1 IXGH56N60B3D1 IXYS littelfuse_discrete_igbts_pt_ixgh56n60b3d1_datasheet.pdf.pdf Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/155ns
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 138 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 330 W
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IXGH64N60A3 IXGH64N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_64n60a3_datasheet.pdf.pdf Description: IGBT 600V 460W TO247
Produkt ist nicht verfügbar
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IXGH64N60B3 IXGH64N60B3 IXYS littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf.pdf Description: IGBT 600V 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGK320N60B3 IXGK320N60B3 IXYS littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437 Description: IGBT PT 600V 500A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
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IXGK55N120A3H1 IXGK55N120A3H1 IXYS Description: IGBT PT 1200V 125A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
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IXGK82N120A3 IXGK82N120A3 IXYS littelfuse_discrete_igbts_pt_ixg_82n120a3_datasheet.pdf.pdf Description: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
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IXGK82N120B3 IXGK82N120B3 IXYS littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf Description: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXGN400N60B3 IXGN400N60B3 IXYS littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323 Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
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IXXN100N60B3H1 DS100421BIXXN100N60B3H1.pdf
IXXN100N60B3H1
Hersteller: IXYS
Description: IGBT MOD 600V 170A 500W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V
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1+47.2 EUR
10+34.69 EUR
100+29.99 EUR
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IXBL64N250 littelfuse_discrete_igbts_bimosfet_ixbl64n250_datasheet.pdf.pdf
IXBL64N250
Hersteller: IXYS
Description: IGBT 2500V 116A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
Supplier Device Package: ISOPLUSi5-Pak™
Gate Charge: 400 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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SLMD121H04L SLMD121H04L_Nov16.pdf
SLMD121H04L
Hersteller: IXYS
Description: MONOCRYSTL SOLAR CELL 89MW 2.52V
auf Bestellung 1863 Stücke:
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SLMD121H08L SLMD121H08L_Nov16.pdf
SLMD121H08L
Hersteller: IXYS
Description: MONOCRYST SOLAR CELL 178MW 5.04V
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SLMD481H08L SLMD481H08L_nov16.pdf
SLMD481H08L
Hersteller: IXYS
Description: MONOCRYST SOLAR CELL 714MW 5.04V
auf Bestellung 975 Stücke:
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IXGT4N250C DS100320(IXGH-GT4N250C).pdf
IXGT4N250C
Hersteller: IXYS
Description: IGBT 2500V 13A 150W TO268
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IXBT24N170 DS100190A(IXBH-BT24N170).pdf
IXBT24N170
Hersteller: IXYS
Description: IGBT 1700V 60A 250W TO268
Produkt ist nicht verfügbar
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IXFA14N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf
IXFA14N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA20N50P3 171448803littelfusediscretemosfetsnchannelhiperfetsix.pdf
IXFA20N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IXFA230N075T2 DS100074A(IXFA-FP230N075T2).pdf
IXFA230N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 230A TO-263AA
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IXFA4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
IXFA4N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO263
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IXFA5N100P littelfuse-discrete-mosfets-ixf-5n100p-datasheet?assetguid=5a8f0a96-ceb5-415e-bda2-4c69b9726811
IXFA5N100P
Hersteller: IXYS
Description: MOSFET N-CH 1000V 5A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH120N25T media?resourcetype=datasheets&itemid=FCE667A0-AE55-40BC-BAC0-EAB7DA190E7D&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXF-120N25T-Datasheet.PDF
IXFH120N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 60A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH14N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf
IXFH14N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH150N20T DS100426IXFTH150N20T.pdf
IXFH150N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 150A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFH160N15T2 DS100228AIXFH160N15T2.pdf
IXFH160N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
auf Bestellung 1041 Stücke:
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Anzahl Preis
2+14.96 EUR
30+8.84 EUR
120+7.49 EUR
510+6.85 EUR
Mindestbestellmenge: 2
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IXFH20N50P3 littelfuse-discrete-mosfets-ixf-20n50p3-datasheet?assetguid=17d5b834-f5fe-4724-bef9-f55d728d93a8
IXFH20N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 277 Stücke:
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Anzahl Preis
2+11.32 EUR
30+6.52 EUR
120+5.47 EUR
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IXFH86N30T littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_86n30t_datasheet.pdf.pdf
IXFH86N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 86A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 43A, 10V
Power Dissipation (Max): 860W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 27 Stücke:
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Anzahl Preis
1+19.17 EUR
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IXFH94N30T DS100383A(IXFH-T94N30T).pdf
IXFH94N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO247AD
auf Bestellung 2340 Stücke:
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IXFK32N90P DS100387(IXFK-FX32N90P).pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 32A TO-264
Produkt ist nicht verfügbar
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IXFL132N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl132n50p3_datasheet.pdf.pdf
IXFL132N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 63A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN140N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfn140n25t_datasheet.pdf.pdf
IXFN140N25T
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A SOT227B
Produkt ist nicht verfügbar
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IXFN80N60P3 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN80N60P3-Datasheet.PDF?assetguid=9434A8A1-B967-4231-AB2B-1058CFA96F61
IXFN80N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 66A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 124 Stücke:
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Anzahl Preis
1+54.6 EUR
10+40.49 EUR
100+35.99 EUR
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IXFP110N15T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_110n15t2_datasheet.pdf.pdf
IXFP110N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP130N10T2 littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3
IXFP130N10T2
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP14N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_14n60p3_datasheet.pdf.pdf
IXFP14N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 7A, 10V
Power Dissipation (Max): 327W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP20N50P3M DS100415AIXFP20N50P3M.pdf
IXFP20N50P3M
Hersteller: IXYS
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP26N50P3 littelfuse-discrete-mosfets-ixf-26n50p3-datasheet?assetguid=a8b0d040-1523-4949-9cf7-d162b9eed257
IXFP26N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.19 EUR
50+8.43 EUR
100+7.78 EUR
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IXFP4N60P3
IXFP4N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ20N50P3 littelfuse-discrete-mosfets-ixf-20n50p3-datasheet?assetguid=17d5b834-f5fe-4724-bef9-f55d728d93a8
IXFQ20N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.4 EUR
30+5.96 EUR
120+4.98 EUR
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IXFR230N20T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfr230n20t_datasheet.pdf.pdf
IXFR230N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 156A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR58N20 98591.pdf
IXFR58N20
Hersteller: IXYS
Description: MOSFET N-CH 200V 50A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR80N60P3 media?resourcetype=datasheets&itemid=009C6FF2-024A-4E5F-BFDB-8F99ACAA6258&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR80N60P3-Datasheet.PDF
IXFR80N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 48A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 40A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT150N20T
IXFT150N20T
Hersteller: IXYS
Description: MOSFET N-CH 200V 150A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT320N10T2 littelfuse-discrete-mosfets-ixf-320n10t2-datasheet?assetguid=99cd63b2-fc21-4394-81cf-ea2bb2be118d
IXFT320N10T2
Hersteller: IXYS
Description: MOSFET N-CH 100V 320A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT94N30T DS100383A(IXFH-T94N30T).pdf
IXFT94N30T
Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO268
auf Bestellung 3690 Stücke:
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IXFX250N10P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_250n10p_datasheet.pdf.pdf
IXFX250N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 250A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
IXFY4N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO252
Produkt ist nicht verfügbar
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IXFZ520N075T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixfz520n075t2_datasheet.pdf.pdf
IXFZ520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+67.04 EUR
20+51.43 EUR
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IXGA12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGA12N120A3
Hersteller: IXYS
Description: IGBT 1200V 22A 100W TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263AA
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGA20N120B3 littelfuse-discrete-igbts-ixg-20n120b3-datasheet?assetguid=def4a3cc-20a8-4c45-8af2-ba8dcd0c72ff
IXGA20N120B3
Hersteller: IXYS
Description: IGBT PT 1200V 36A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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IXGA50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGA50N60C4
Hersteller: IXYS
Description: IGBT 600V 90A 300W TO263
Produkt ist nicht verfügbar
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IXGH12N120A3 littelfuse_discrete_igbts_pt_ixg_12n120a3_datasheet.pdf.pdf
IXGH12N120A3
Hersteller: IXYS
Description: IGBT 1200V 22A 100W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+4.31 EUR
Mindestbestellmenge: 300
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IXGH20N140C3H1 littelfuse_discrete_igbts_pt_ixg_20n140c3h1_datasheet.pdf.pdf
IXGH20N140C3H1
Hersteller: IXYS
Description: IGBT 1400V 42A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/110ns
Switching Energy: 1.35mJ (on), 440µJ (off)
Test Condition: 700V, 20A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXGH24N60C4
IXGH24N60C4
Hersteller: IXYS
Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXGH24N60C4D1
IXGH24N60C4D1
Hersteller: IXYS
Description: IGBT PT 600V 56A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/143ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 360V, 24A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXGH28N140B3H1 littelfuse_discrete_igbts_pt_ixg_28n140b3h1_datasheet.pdf.pdf
IXGH28N140B3H1
Hersteller: IXYS
Description: IGBT 1400V 60A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/190ns
Switching Energy: 3.6mJ (on), 3.9mJ (off)
Test Condition: 960V, 28A, 5Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGH30N60B4
IXGH30N60B4
Hersteller: IXYS
Description: IGBT PT 600V 66A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 440µJ (on), 700µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 156 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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IXGH36N60A3 littelfuse-discrete-igbts-ixg-36n60a3-datasheet?assetguid=c23e0bfa-71be-4fc5-95ce-1a86be9b836e
IXGH36N60A3
Hersteller: IXYS
Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/330ns
Switching Energy: 740µJ (on), 3mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 220 W
Produkt ist nicht verfügbar
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IXGH36N60B3 littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8
IXGH36N60B3
Hersteller: IXYS
Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.96 EUR
30+5.07 EUR
Mindestbestellmenge: 2
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IXGH50N60C4 DS100298C(IXGA-P-H50N60C4).pdf
IXGH50N60C4
Hersteller: IXYS
Description: IGBT 600V 90A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/270ns
Switching Energy: 950µJ (on), 840µJ (off)
Test Condition: 400V, 36A, 10Ohm, 15V
Gate Charge: 113 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGH56N60A3 littelfuse-discrete-igbts-ixgh56n60a3-datasheet?assetguid=36f75a5a-a641-4d71-802a-ec49621c881d
IXGH56N60A3
Hersteller: IXYS
Description: IGBT PT 600V 150A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/310ns
Switching Energy: 1mJ (on), 3.75mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 370 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IXGH56N60B3D1 littelfuse_discrete_igbts_pt_ixgh56n60b3d1_datasheet.pdf.pdf
IXGH56N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/155ns
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Test Condition: 480V, 44A, 5Ohm, 15V
Gate Charge: 138 nC
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 330 W
Produkt ist nicht verfügbar
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IXGH64N60A3 littelfuse_discrete_igbts_pt_ixg_64n60a3_datasheet.pdf.pdf
IXGH64N60A3
Hersteller: IXYS
Description: IGBT 600V 460W TO247
Produkt ist nicht verfügbar
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IXGH64N60B3 littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf.pdf
IXGH64N60B3
Hersteller: IXYS
Description: IGBT 600V 460W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGK320N60B3 littelfuse-discrete-igbts-ixg-320n60b3-datasheet?assetguid=448e088e-56ea-48d2-b291-c14c7820b437
IXGK320N60B3
Hersteller: IXYS
Description: IGBT PT 600V 500A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/250ns
Switching Energy: 2.7mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 1Ohm, 15V
Gate Charge: 585 nC
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1700 W
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IXGK55N120A3H1
IXGK55N120A3H1
Hersteller: IXYS
Description: IGBT PT 1200V 125A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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IXGK82N120A3 littelfuse_discrete_igbts_pt_ixg_82n120a3_datasheet.pdf.pdf
IXGK82N120A3
Hersteller: IXYS
Description: IGBT 1200V 260A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
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IXGK82N120B3 littelfuse_discrete_igbts_pt_ixg_82n120b3_datasheet.pdf.pdf
IXGK82N120B3
Hersteller: IXYS
Description: IGBT 1200V 230A 1250W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/210ns
Switching Energy: 5mJ (on), 3.3mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 500 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXGN400N60B3 littelfuse-discrete-igbts-ixgn400n60b3-datasheet?assetguid=6c880e02-cb87-465f-a3ab-914a55cd1323
IXGN400N60B3
Hersteller: IXYS
Description: IGBT MODULE 600V 430A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 430 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 31 nF @ 25 V
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+98.86 EUR
10+75.9 EUR
100+74.77 EUR
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