auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 29.29 EUR |
| 10+ | 27.91 EUR |
| 30+ | 22.44 EUR |
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Technische Details IXFT15N100Q3 IXYS
Description: MOSFET N-CH 1000V 15A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V.
Weitere Produktangebote IXFT15N100Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXFT15N100Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 15A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT15N100Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO268 On-state resistance: 1.05Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT15N100Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 15A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT15N100Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 690W Case: TO268 On-state resistance: 1.05Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |