auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 55.02 EUR |
| 10+ | 45.5 EUR |
| 30+ | 44.18 EUR |
| 60+ | 43.33 EUR |
| 120+ | 41.11 EUR |
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Technische Details IXFR32N80Q3 IXYS
Description: MOSFET N-CH 800V 24A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V.
Weitere Produktangebote IXFR32N80Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXFR32N80Q3 | Hersteller : IXYS |
 IXFR32N80Q3 THT N channel transistors |
Produkt ist nicht verfügbar |
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IXFR32N80Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 800V 24A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 25 V |
Produkt ist nicht verfügbar |