IXFB100N50Q3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Mounting: THT
Case: PLUS264™
Drain-source voltage: 500V
Drain current: 100A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 255nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFB100N50Q3 IXYS
Description: MOSFET N-CH 500V 100A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V, Power Dissipation (Max): 1560W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: PLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V.
Weitere Produktangebote IXFB100N50Q3
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IXFB100N50Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 100A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Power Dissipation (Max): 1560W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: PLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 25 V |
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IXFB100N50Q3 | Hersteller : IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A |
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IXFB100N50Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Mounting: THT Case: PLUS264™ Drain-source voltage: 500V Drain current: 100A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 1.56kW Polarisation: unipolar Kind of package: tube Gate charge: 255nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |