IXFR32N100Q3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 44.46 EUR |
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Technische Details IXFR32N100Q3 IXYS
Description: MOSFET N-CH 1000V 23A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V, Power Dissipation (Max): 570W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V.
Weitere Produktangebote IXFR32N100Q3 nach Preis ab 44.46 EUR bis 44.46 EUR
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IXFR32N100Q3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Power dissipation: 570W Case: ISOPLUS247™ On-state resistance: 0.35Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR32N100Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 23A 3-Pin(3+Tab) ISOPLUS 247 |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR32N100Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 23A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V |
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IXFR32N100Q3 | Hersteller : IXYS |
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A |
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