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IXYX100N120C3 IXYX100N120C3 IXYS DS100404AIXYKX100N120C3.pdf Description: IGBT 1200V 188A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
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MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 550A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
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DSEI8-06AS-TRL DSEI8-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674 Description: DIODE STANDARD 600V 8A TO263AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSEP40-03AS-TRL DSEP40-03AS-TRL IXYS media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet Description: DIODE STANDARD 300V 40A TO263AA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSEP6-06AS-TRL DSEP6-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP6-06AS-Datasheet?assetguid=c72fe95f-12c6-409b-b46f-4a51a0e564e7 Description: DIODE STANDARD 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
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DSI30-08AS-TRL DSI30-08AS-TRL IXYS media?resourcetype=datasheets&itemid=517a38f0-6de7-4d1e-9262-04a5da9f220b&filename=Littelfuse-Power-Semiconductors-DSI30-08AS-Datasheet Description: DIODE GEN PURP 800V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSI30-16AS-TRL DSI30-16AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f Description: DIODE STANDARD 1600V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSP8-08AS-TRL DSP8-08AS-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DSSK28-006BS-TUB DSSK28-006BS-TUB IXYS Description: DIODE ARR SCHOTT 60V 15A TO263AA
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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MMIX1F520N075T2 MMIX1F520N075T2 IXYS MMIX1F520N075T2.pdf Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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MMIX1F44N100Q3 MMIX1F44N100Q3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
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MMIX1X100N60B3H1 MMIX1X100N60B3H1 IXYS littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf Description: IGBT 600V 145A 400W SMPD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
Supplier Device Package: 24-SMPD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
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MMIX1X200N60B3H1 MMIX1X200N60B3H1 IXYS littelfuse-discrete-igbts-mmix1x200n60b3h1-datasheet?assetguid=594a0034-e667-4341-8d0f-6cce662088ba Description: IGBT 600V 175A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
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IXYH40N120B3 IXYH40N120B3 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf Description: IGBT 1200V 96A 577W TO247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 87 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 22ns/177ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 577 W
Current - Collector Pulsed (Icm): 200 A
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS DS100413BIXYH40N120B3D1.pdf Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
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IXYK120N120C3 IXYK120N120C3 IXYS DS100451BIXYKX120N120C3.pdf Description: IGBT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
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IXYR50N120C3D1 IXYR50N120C3D1 IXYS DS100492BIXYR50N120C3D1.pdf Description: IGBT 1200V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
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IXYX120N120C3 IXYX120N120C3 IXYS DS100451BIXYKX120N120C3.pdf Description: IGBT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
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IXYH20N120C3D1 IXYH20N120C3D1 IXYS DS100485BIXYH20N120C3D1.pdf Description: IGBT 1200V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
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IXYJ20N120C3D1 IXYJ20N120C3D1 IXYS IXYJ20N120C3D1.pdf Description: IGBT 1200V 21A ISO247
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: ISO247
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 105 W
Current - Collector Pulsed (Icm): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
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IXYP20N120C3 IXYP20N120C3 IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-220-3
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
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IXYH20N120C3 IXYH20N120C3 IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-247
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
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IXGV25N250S IXYS Description: IGBT NPT 2500V 60A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: PLUS-220SMD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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IXTF02N450 IXTF02N450 IXYS DS100499AIXTF02N450.pdf Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXGF25N250 IXGF25N250 IXYS littelfuse-discrete-igbts-ixgf25n250-datasheet?assetguid=6c4037df-b10b-40b6-8c4b-e3224d5cb52a Description: IGBT NPT 2500V 30A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
Produkt ist nicht verfügbar
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IXTA02N450HV IXTA02N450HV IXYS littelfuse-discrete-mosfets-ixt-02n450hv-datasheet?assetguid=77e78b19-f9d4-4f1c-bb1f-3fed948a23e3 Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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IXGF25N300 IXGF25N300 IXYS littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf Description: IGBT 3000V 27A 114W I4-PAK
Produkt ist nicht verfügbar
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IXGL75N250 IXGL75N250 IXYS DS99861B(IXGL75N250).pdf Description: IGBT 2500V 110A 430W I5-PAK
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IXTF03N400 IXTF03N400 IXYS DS100117A(IXTF03N400).pdf Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Produkt ist nicht verfügbar
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IXGF20N300 IXGF20N300 IXYS littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf Description: IGBT 3000V 22A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGH10N300 IXGH10N300 IXYS IXGH10N300.pdf Description: IGBT 3000V 18A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGK75N250 IXGK75N250 IXYS Description: IGBT NPT 2500V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
auf Bestellung 721 Stücke:
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IXGT2N250 IXGT2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A TO268AA
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Gate Charge: 10.5 nC
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXGH2N250 IXGH2N250 IXYS littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5.5A 32W TO247
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 10.5 nC
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
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IXTA02N250 IXTA02N250 IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Produkt ist nicht verfügbar
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IXGF36N300 IXGF36N300 IXYS littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf Description: IGBT 3000V 36A 160W I4-PAK
Produkt ist nicht verfügbar
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IXGF20N250 IXGF20N250 IXYS littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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MMIX1F360N15T2 MMIX1F360N15T2 IXYS media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Produkt ist nicht verfügbar
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MIXA60WH1200TEH MIXA60WH1200TEH IXYS MIXA60WH1200TEH.pdf Description: IGBT 3PHASE 1200V 85A MODULE
Produkt ist nicht verfügbar
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VUM33-06PH VUM33-06PH IXYS media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet Description: BRIDGE RECT 1PHASE 600V 106A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase (PFC Module)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Packaging: Box
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Average Rectified (Io): 106 A
Produkt ist nicht verfügbar
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IXXH30N65B4 IXXH30N65B4 IXYS littelfuse-discrete-igbts-ixxh30n65b4-datasheet?assetguid=bb76bd16-6a6e-45a4-b34e-7d116578b2b0 Description: IGBT PT 650V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
auf Bestellung 39 Stücke:
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2+15.84 EUR
30+9.21 EUR
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IXXH60N65B4H1 IXXH60N65B4H1 IXYS littelfuse-discrete-igbts-ixxh60n65b4h1-datasheet?assetguid=3de83c42-63bf-4736-b1ff-7b83c15e7a8f Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
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1+28.61 EUR
30+17.49 EUR
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IXXH60N65B4 IXXH60N65B4 IXYS littelfusediscreteigbtsxptixxh60n65b4datashee.pdf Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
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2+16.4 EUR
30+9.56 EUR
120+8.06 EUR
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IXXH60N65C4 IXXH60N65C4 IXYS media?resourcetype=datasheets&itemid=72FD28C3-E1C0-4F85-8E5B-CC977BD3349C&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH60N65C4-Datasheet.PDF Description: IGBT PT 650V 118A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Produkt ist nicht verfügbar
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IXXH40N65B4 IXXH40N65B4 IXYS littelfuse-discrete-igbts-ixxh40n65b4-datasheet?assetguid=cdfdc92b-2f9a-4753-947c-46c7022391f6 Description: IGBT PT 650V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.29 EUR
30+9.51 EUR
120+8.01 EUR
510+6.91 EUR
1020+6.7 EUR
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS littelfuse-discrete-igbts-ixxr110n65b4h1-datasheet?assetguid=39b5b664-4108-4d30-a4e5-551615b43c2b Description: IGBT PT 650V 150A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
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1+59.5 EUR
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120+35.55 EUR
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IXXH80N65B4 IXXH80N65B4 IXYS ds100527b%28ixxh80n65b4%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS ds100528c%28ixxh80n65b4h1%29.pdf Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF Description: IGBT MOD 650V 210A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
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IXXH110N65C4 IXXH110N65C4 IXYS ds100497c%28ixxh110n65c4%29.pdf Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
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30+20.1 EUR
120+17.35 EUR
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IXXN110N65B4H1 IXXN110N65B4H1 IXYS littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae Description: IGBT MOD 650V 215A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
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IXXK110N65B4H1 IXXK110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
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IXXK160N65C4 IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXX160N65C4 IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXK160N65B4 IXXK160N65B4 IXYS littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40 Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
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IXXX160N65B4 IXXX160N65B4 IXYS littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40 Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
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IXXK200N65B4 IXXK200N65B4 IXYS littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf Description: IGBT 650V 370A 1150W TO264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 1000 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 370 A
Part Status: Active
Gate Charge: 553 nC
Test Condition: 400V, 100A, 1Ohm, 15V
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 62ns/245ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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IXXX200N65B4 IXXX200N65B4 IXYS littelfuse-discrete-igbts-ixxx200n65b4-datasheet?assetguid=da9236d0-556d-429e-a7cb-bc5ea6265537 Description: IGBT PT 650V 370A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
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SLFL-M-WHT SLFL-M-WHT IXYS SLFL-M-WHT_Web.pdf Description: FLASHLIGHT LED AAA(1)
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IXYX100N120C3 DS100404AIXYKX100N120C3.pdf
IXYX100N120C3
Hersteller: IXYS
Description: IGBT 1200V 188A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 490 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 188 A
Part Status: Active
Gate Charge: 270 nC
Test Condition: 600V, 100A, 1Ohm, 15V
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C: 32ns/123ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Input Type: Standard
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MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 55V 550A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
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DSEI8-06AS-TRL Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674
DSEI8-06AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 600V 8A TO263AA
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DSEP40-03AS-TRL media?resourcetype=datasheets&itemid=d5c9c212-3e77-4435-b031-6ff61a740ca1&filename=Littelfuse-Power-Semiconductors-DSEP40-03AS-Datasheet
DSEP40-03AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 300V 40A TO263AA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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DSEP6-06AS-TRL Littelfuse-Power-Semiconductors-DSEP6-06AS-Datasheet?assetguid=c72fe95f-12c6-409b-b46f-4a51a0e564e7
DSEP6-06AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
auf Bestellung 5303 Stücke:
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4+5.97 EUR
10+3.87 EUR
50+2.96 EUR
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500+2.17 EUR
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DSI30-08AS-TRL media?resourcetype=datasheets&itemid=517a38f0-6de7-4d1e-9262-04a5da9f220b&filename=Littelfuse-Power-Semiconductors-DSI30-08AS-Datasheet
DSI30-08AS-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 800V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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4+6.89 EUR
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DSI30-16AS-TRL Littelfuse-Power-Semiconductors-DSI30-16AS-Datasheet?assetguid=728e0950-55e7-4c06-8e1a-890a9b55042f
DSI30-16AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 1600V 30A TO263AA
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DSP8-08AS-TRL Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c
DSP8-08AS-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 800V 11A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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100+5.05 EUR
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DSSK28-006BS-TUB
DSSK28-006BS-TUB
Hersteller: IXYS
Description: DIODE ARR SCHOTT 60V 15A TO263AA
Current - Reverse Leakage @ Vr: 10 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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MMIX1F520N075T2 MMIX1F520N075T2.pdf
MMIX1F520N075T2
Hersteller: IXYS
Description: MOSFET N-CH 75V 500A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V
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MMIX1F44N100Q3 littelfuse_discrete_mosfets_smpd_packages_mmix1f44n100q3_datasheet.pdf.pdf
MMIX1F44N100Q3
Hersteller: IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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MMIX1X100N60B3H1 littelfuse_discrete_igbts_smpd_packages_mmix1x100n60b3h1_datasheet.pdf.pdf
MMIX1X100N60B3H1
Hersteller: IXYS
Description: IGBT 600V 145A 400W SMPD
Power - Max: 400 W
Current - Collector Pulsed (Icm): 440 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 143 nC
Test Condition: 360V, 70A, 2Ohm, 15V
Switching Energy: 1.9mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 30ns/120ns
Supplier Device Package: 24-SMPD
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Reverse Recovery Time (trr): 140 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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MMIX1X200N60B3H1 littelfuse-discrete-igbts-mmix1x200n60b3h1-datasheet?assetguid=594a0034-e667-4341-8d0f-6cce662088ba
MMIX1X200N60B3H1
Hersteller: IXYS
Description: IGBT 600V 175A 24-SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: 24-SMPD
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 520 W
auf Bestellung 500 Stücke:
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IXYH40N120B3 littelfuse_discrete_igbts_xpt_ixyh40n120b3_datasheet.pdf.pdf
IXYH40N120B3
Hersteller: IXYS
Description: IGBT 1200V 96A 577W TO247
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Gate Charge: 87 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 22ns/177ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 577 W
Current - Collector Pulsed (Icm): 200 A
Produkt ist nicht verfügbar
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IXYH40N120B3D1 DS100413BIXYH40N120B3D1.pdf
IXYH40N120B3D1
Hersteller: IXYS
Description: IGBT 1200V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
auf Bestellung 1449 Stücke:
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IXYK120N120C3 DS100451BIXYKX120N120C3.pdf
IXYK120N120C3
Hersteller: IXYS
Description: IGBT 1200V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
auf Bestellung 524 Stücke:
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IXYR50N120C3D1 DS100492BIXYR50N120C3D1.pdf
IXYR50N120C3D1
Hersteller: IXYS
Description: IGBT 1200V 56A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
Produkt ist nicht verfügbar
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IXYX120N120C3 DS100451BIXYKX120N120C3.pdf
IXYX120N120C3
Hersteller: IXYS
Description: IGBT 1200V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
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IXYH20N120C3D1 DS100485BIXYH20N120C3D1.pdf
IXYH20N120C3D1
Hersteller: IXYS
Description: IGBT 1200V 36A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
auf Bestellung 314 Stücke:
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IXYJ20N120C3D1 IXYJ20N120C3D1.pdf
IXYJ20N120C3D1
Hersteller: IXYS
Description: IGBT 1200V 21A ISO247
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: ISO247
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 105 W
Current - Collector Pulsed (Icm): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Produkt ist nicht verfügbar
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IXYP20N120C3 littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe
IXYP20N120C3
Hersteller: IXYS
Description: IGBT 1200V 40A TO-220-3
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
auf Bestellung 300 Stücke:
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IXYH20N120C3 littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe
IXYH20N120C3
Hersteller: IXYS
Description: IGBT 1200V 40A TO-247
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
auf Bestellung 475 Stücke:
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2+14.52 EUR
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IXGV25N250S
Hersteller: IXYS
Description: IGBT NPT 2500V 60A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: PLUS-220SMD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXTF02N450 DS100499AIXTF02N450.pdf
IXTF02N450
Hersteller: IXYS
Description: MOSFET N-CH 4500V 200MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
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IXGF25N250 littelfuse-discrete-igbts-ixgf25n250-datasheet?assetguid=6c4037df-b10b-40b6-8c4b-e3224d5cb52a
IXGF25N250
Hersteller: IXYS
Description: IGBT NPT 2500V 30A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Gate Charge: 75 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 114 W
Produkt ist nicht verfügbar
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IXTA02N450HV littelfuse-discrete-mosfets-ixt-02n450hv-datasheet?assetguid=77e78b19-f9d4-4f1c-bb1f-3fed948a23e3
IXTA02N450HV
Hersteller: IXYS
Description: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
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IXGF25N300 littelfuse_discrete_igbts_npt_ixgf25n300_datasheet.pdf.pdf
IXGF25N300
Hersteller: IXYS
Description: IGBT 3000V 27A 114W I4-PAK
Produkt ist nicht verfügbar
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IXGL75N250 DS99861B(IXGL75N250).pdf
IXGL75N250
Hersteller: IXYS
Description: IGBT 2500V 110A 430W I5-PAK
Produkt ist nicht verfügbar
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IXTF03N400 DS100117A(IXTF03N400).pdf
IXTF03N400
Hersteller: IXYS
Description: MOSFET N-CH 4000V 300MA I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4000 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 25 V
Produkt ist nicht verfügbar
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IXGF20N300 littelfuse_discrete_igbts_npt_ixgf20n300_datasheet.pdf.pdf
IXGF20N300
Hersteller: IXYS
Description: IGBT 3000V 22A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 31 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 103 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGH10N300 IXGH10N300.pdf
IXGH10N300
Hersteller: IXYS
Description: IGBT 3000V 18A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
Supplier Device Package: TO-247AD
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IXGK75N250
IXGK75N250
Hersteller: IXYS
Description: IGBT NPT 2500V 170A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: NPT
Gate Charge: 410 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 780 W
auf Bestellung 721 Stücke:
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IXGT2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGT2N250
Hersteller: IXYS
Description: IGBT 2500V 5.5A TO268AA
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Gate Charge: 10.5 nC
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXGH2N250 littelfuse_discrete_igbts_npt_ixg_2n250_datasheet.pdf.pdf
IXGH2N250
Hersteller: IXYS
Description: IGBT 2500V 5.5A 32W TO247
Power - Max: 32 W
Current - Collector Pulsed (Icm): 13.5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 5.5 A
Part Status: Active
Gate Charge: 10.5 nC
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A
Input Type: Standard
auf Bestellung 283 Stücke:
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1+31.44 EUR
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IXTA02N250 IXTx02N250%28S%29.pdf
IXTA02N250
Hersteller: IXYS
Description: MOSFET N-CH 2500V 200MA TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Produkt ist nicht verfügbar
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IXGF36N300 littelfuse_discrete_igbts_npt_ixgf36n300_datasheet.pdf.pdf
IXGF36N300
Hersteller: IXYS
Description: IGBT 3000V 36A 160W I4-PAK
Produkt ist nicht verfügbar
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IXGF20N250 littelfuse_discrete_igbts_npt_ixgf20n250_datasheet.pdf.pdf
IXGF20N250
Hersteller: IXYS
Description: IGBT 2500V 23A ISOPLUSI4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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MMIX1F360N15T2 media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet
MMIX1F360N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 235A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: 24-SMPD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Produkt ist nicht verfügbar
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MIXA60WH1200TEH MIXA60WH1200TEH.pdf
MIXA60WH1200TEH
Hersteller: IXYS
Description: IGBT 3PHASE 1200V 85A MODULE
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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VUM33-06PH media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet
VUM33-06PH
Hersteller: IXYS
Description: BRIDGE RECT 1PHASE 600V 106A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Single Phase (PFC Module)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Packaging: Box
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 50 A
Current - Average Rectified (Io): 106 A
Produkt ist nicht verfügbar
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IXXH30N65B4 littelfuse-discrete-igbts-ixxh30n65b4-datasheet?assetguid=bb76bd16-6a6e-45a4-b34e-7d116578b2b0
IXXH30N65B4
Hersteller: IXYS
Description: IGBT PT 650V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 1.55mJ (on), 480µJ (off)
Test Condition: 400V, 30A, 15Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 146 A
Power - Max: 230 W
auf Bestellung 39 Stücke:
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IXXH60N65B4H1 littelfuse-discrete-igbts-ixxh60n65b4h1-datasheet?assetguid=3de83c42-63bf-4736-b1ff-7b83c15e7a8f
IXXH60N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
auf Bestellung 50 Stücke:
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IXXH60N65B4 littelfusediscreteigbtsxptixxh60n65b4datashee.pdf
IXXH60N65B4
Hersteller: IXYS
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 455 W
auf Bestellung 960 Stücke:
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2+16.4 EUR
30+9.56 EUR
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510+6.96 EUR
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IXXH60N65C4 media?resourcetype=datasheets&itemid=72FD28C3-E1C0-4F85-8E5B-CC977BD3349C&filename=Littelfuse-Discrete-IGBTs-XPT-IXXH60N65C4-Datasheet.PDF
IXXH60N65C4
Hersteller: IXYS
Description: IGBT PT 650V 118A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/133ns
Switching Energy: 3.2mJ (on), 830µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
Produkt ist nicht verfügbar
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IXXH40N65B4 littelfuse-discrete-igbts-ixxh40n65b4-datasheet?assetguid=cdfdc92b-2f9a-4753-947c-46c7022391f6
IXXH40N65B4
Hersteller: IXYS
Description: IGBT PT 650V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
auf Bestellung 1440 Stücke:
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2+16.29 EUR
30+9.51 EUR
120+8.01 EUR
510+6.91 EUR
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IXXR110N65B4H1 littelfuse-discrete-igbts-ixxr110n65b4h1-datasheet?assetguid=39b5b664-4108-4d30-a4e5-551615b43c2b
IXXR110N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 150A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 455 W
auf Bestellung 305 Stücke:
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120+35.55 EUR
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IXXH80N65B4 ds100527b%28ixxh80n65b4%29.pdf
IXXH80N65B4
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 4747 Stücke:
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2+20.73 EUR
30+12.34 EUR
120+10.5 EUR
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IXXH80N65B4H1 ds100528c%28ixxh80n65b4h1%29.pdf
IXXH80N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 1843 Stücke:
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1+28.86 EUR
30+17.67 EUR
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510+14.14 EUR
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IXXN110N65C4H1 Littelfuse-Discrete-IGBTs-XPT-IXXN110N65C4H1-Datasheet.PDF?assetguid=D57B89E1-FC96-4AFA-B6E3-35B07F2CB2AF
IXXN110N65C4H1
Hersteller: IXYS
Description: IGBT MOD 650V 210A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V
auf Bestellung 568 Stücke:
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IXXH110N65C4 ds100497c%28ixxh110n65c4%29.pdf
IXXH110N65C4
Hersteller: IXYS
Description: IGBT PT 650V 234A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/143ns
Switching Energy: 2.3mJ (on), 600µJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 234 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 880 W
auf Bestellung 4471 Stücke:
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AnzahlPrivatkunde
1+32.63 EUR
30+20.1 EUR
120+17.35 EUR
510+16.29 EUR
1020+15.36 EUR
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IXXN110N65B4H1 littelfuse-discrete-igbts-ixxn110n65b4h1-datasheet?assetguid=7ba2f796-a557-41cb-97c1-663bdf80a5ae
IXXN110N65B4H1
Hersteller: IXYS
Description: IGBT MOD 650V 215A 750W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
auf Bestellung 300 Stücke:
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1+61.4 EUR
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IXXK110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXK110N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 240A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
auf Bestellung 278 Stücke:
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1+52.57 EUR
25+34.57 EUR
100+30.4 EUR
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IXXX110N65B4H1 littelfuse-discrete-igbts-ixx-110n65b4h1-datasheet?assetguid=f2444f1a-72a7-4cd6-9d41-c399cd2e0f6d
IXXX110N65B4H1
Hersteller: IXYS
Description: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
auf Bestellung 127 Stücke:
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1+46.24 EUR
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IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
IXXK160N65C4
Hersteller: IXYS
Description: IGBT PT 650V 290A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
IXXX160N65C4
Hersteller: IXYS
Description: IGBT PT 650V 290A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/197ns
Switching Energy: 3.5mJ (on), 1.3mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 422 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 940 W
Produkt ist nicht verfügbar
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IXXK160N65B4 littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40
IXXK160N65B4
Hersteller: IXYS
Description: IGBT PT 650V 310A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: TO-264 (IXXK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+57.99 EUR
25+38.46 EUR
100+34.41 EUR
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IXXX160N65B4 littelfuse-discrete-igbts-ixx-160n65b4-datasheet?assetguid=c438c04a-54c3-4291-8c76-245b042e9f40
IXXX160N65B4
Hersteller: IXYS
Description: IGBT PT 650V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 690 Stücke:
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AnzahlPrivatkunde
1+58.83 EUR
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IXXK200N65B4 littelfuse_discrete_igbts_xpt_ixxx200n65b4_datasheet.pdf.pdf
IXXK200N65B4
Hersteller: IXYS
Description: IGBT 650V 370A 1150W TO264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 1000 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 370 A
Part Status: Active
Gate Charge: 553 nC
Test Condition: 400V, 100A, 1Ohm, 15V
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 62ns/245ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXXK)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IXXX200N65B4 littelfuse-discrete-igbts-ixxx200n65b4-datasheet?assetguid=da9236d0-556d-429e-a7cb-bc5ea6265537
IXXX200N65B4
Hersteller: IXYS
Description: IGBT PT 650V 370A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 62ns/245ns
Switching Energy: 4.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 553 nC
Part Status: Active
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1000 A
Power - Max: 1150 W
auf Bestellung 1421 Stücke:
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AnzahlPrivatkunde
1+84.19 EUR
30+56.62 EUR
120+54.79 EUR
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SLFL-M-WHT SLFL-M-WHT_Web.pdf
SLFL-M-WHT
Hersteller: IXYS
Description: FLASHLIGHT LED AAA(1)
Produkt ist nicht verfügbar
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