auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.24 EUR |
| 50+ | 16.72 EUR |
| 100+ | 16.70 EUR |
| 500+ | 16.00 EUR |
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Technische Details IXTA15N50L2 IXYS
Description: MOSFET N-CH 500V 15A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V.
Weitere Produktangebote IXTA15N50L2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTA15N50L2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA15N50L2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA15N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns Drain current: 15A On-state resistance: 0.48Ω Type of transistor: N-MOSFET Drain-source voltage: 500V Power dissipation: 300W Reverse recovery time: 570ns Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 123nC Kind of channel: enhancement Case: TO263 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA15N50L2 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 15A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA15N50L2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns Drain current: 15A On-state resistance: 0.48Ω Type of transistor: N-MOSFET Drain-source voltage: 500V Power dissipation: 300W Reverse recovery time: 570ns Polarisation: unipolar Kind of package: tube Features of semiconductor devices: linear power mosfet Gate charge: 123nC Kind of channel: enhancement Case: TO263 Mounting: SMD |
Produkt ist nicht verfügbar |