IXYT80N90C3 IXYS
Hersteller: IXYS
Description: IGBT 900V 165A TO-268AA
Current - Collector (Ic) (Max): 165 A
Gate Charge: 145 nC
Test Condition: 450V, 80A, 2Ohm, 15V
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 34ns/90ns
Supplier Device Package: TO-268AA
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 830 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 900 V
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Technische Details IXYT80N90C3 IXYS
Description: IGBT 900V 165A TO-268AA, Current - Collector (Ic) (Max): 165 A, Gate Charge: 145 nC, Test Condition: 450V, 80A, 2Ohm, 15V, Switching Energy: 4.3mJ (on), 1.9mJ (off), Td (on/off) @ 25°C: 34ns/90ns, Supplier Device Package: TO-268AA, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Power - Max: 830 W, Current - Collector Pulsed (Icm): 360 A, Voltage - Collector Emitter Breakdown (Max): 900 V.
Weitere Produktangebote IXYT80N90C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXYT80N90C3 | IXYS |
IGBTs TO268 900V 80A XPT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXYT80N90C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268 Type of transistor: IGBT Collector-emitter voltage: 900V Collector current: 80A Power dissipation: 830W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: SMD Gate charge: 145nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 134ns Turn-off time: 201ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYT80N90C3 |
|
Hersteller: IXYS
IGBTs TO268 900V 80A XPT
IGBTs TO268 900V 80A XPT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYT80N90C3 |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH