
IXXN200N60C3H1 IXYS

Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Technology: GenX3™; XPT™
Type of semiconductor module: IGBT
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Max. off-state voltage: 0.6kV
Power dissipation: 780W
Anzahl je Verpackung: 1 Stücke
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Technische Details IXXN200N60C3H1 IXYS
Description: IGBT MOD 600V 200A 780W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 780 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V.
Weitere Produktangebote IXXN200N60C3H1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXXN200N60C3H1 | Hersteller : Littelfuse |
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IXXN200N60C3H1 | Hersteller : IXYS |
Description: IGBT MOD 600V 200A 780W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 780 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V |
Produkt ist nicht verfügbar |
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IXXN200N60C3H1 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXXN200N60C3H1 | Hersteller : IXYS |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Technology: GenX3™; XPT™ Type of semiconductor module: IGBT Case: SOT227B Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Max. off-state voltage: 0.6kV Power dissipation: 780W |
Produkt ist nicht verfügbar |