IXFN210N30P3 IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.50 EUR |
| 20+ | 47.45 EUR |
| 200+ | 47.18 EUR |
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Technische Details IXFN210N30P3 IXYS
Description: MOSFET N-CH 300V 192A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 192A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.
Weitere Produktangebote IXFN210N30P3 nach Preis ab 58.71 EUR bis 77.63 EUR
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IXFN210N30P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 192A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 14.5mΩ Pulsed drain current: 550A Power dissipation: 1.5kW Technology: HiPerFET™; Polar3™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 268nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN210N30P3 | Hersteller : IXYS |
MOSFET Modules N-Channel: Power MOSFET w/Fast Diode |
auf Bestellung 847 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN210N30P3 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXFN210N30P3 - MOSFET-Transistor, n-Kanal, 192 A, 300 V, 0.0145 ohm, 10 V, 5 V tariffCode: 85412900 Drain-Source-Spannung Vds: 300V rohsCompliant: YES Dauer-Drainstrom Id: 192A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 1.5kW Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 1.5kW productTraceability: No Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0145ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0145ohm SVHC: To Be Advised |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFN210N30P3 | Hersteller : Ixys Semiconductor GmbH |
MOSFET N-Channel: Power MOSFET w/Fast Diode |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN210N30P3 Produktcode: 164550
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IXFN210N30P3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 192A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 192A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V |
Produkt ist nicht verfügbar |