
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 33.81 EUR |
10+ | 27.77 EUR |
30+ | 26.75 EUR |
60+ | 26.58 EUR |
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Technische Details IXFX150N30P3 IXYS
Description: MOSFET N-CH 300V 150A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V, Power Dissipation (Max): 1300W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V.
Weitere Produktangebote IXFX150N30P3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFX150N30P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX150N30P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFX150N30P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX150N30P3 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 150A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 75A, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX150N30P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 1.3kW Case: PLUS247™ On-state resistance: 19mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |