Technische Details IXYX140N90C3 IXYS
Description: IGBT 900V 310A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 40ns/145ns, Switching Energy: 4.3mJ (on), 4mJ (off), Test Condition: 450V, 100A, 1Ohm, 15V, Gate Charge: 330 nC, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 840 A, Power - Max: 1630 W.
Weitere Produktangebote IXYX140N90C3
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IXYX140N90C3 | Hersteller : IXYS |
 Description: IGBT 900V 310A PLUS247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 40ns/145ns Switching Energy: 4.3mJ (on), 4mJ (off) Test Condition: 450V, 100A, 1Ohm, 15V Gate Charge: 330 nC Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1630 W |
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IXYX140N90C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 140A Power dissipation: 1.63kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 330nC Kind of package: tube Turn-on time: 122ns Turn-off time: 0.3µs |
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