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IXGH36N60B3C1 IXGH36N60B3C1 IXYS littelfuse_discrete_igbts_pt_ixgh36n60b3c1_datasheet.pdf.pdf Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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IXGH48N60B3C1 IXGH48N60B3C1 IXYS littelfuse_discrete_igbts_pt_ixgh48n60b3c1_datasheet.pdf.pdf Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
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IXGH48N60C3C1 IXGH48N60C3C1 IXYS Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
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IXGK100N170 IXGK100N170 IXYS littelfuse-discrete-igbts-ixg-100n170-datasheet?assetguid=d50514ee-b55f-4642-987d-987526d4ab03 Description: IGBT 1700V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
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IXBH2N250 IXBH2N250 IXYS littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf Description: IGBT 2500V 5A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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IXBT2N250 IXBT2N250 IXYS littelfuse-discrete-igbts-ixb-2n250-datasheet?assetguid=42cb674d-92ab-4b5a-a58c-89fd6d0de934 Description: IGBT 2500V 5A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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IXBX25N250 IXBX25N250 IXYS littelfuse_discrete_igbts_bimosfet_ixbx25n250_datasheet.pdf.pdf Description: IGBT 2500V 55A 300W PLUS247
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IXBF20N300 IXBF20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf Description: IGBT 3000V 34A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 150 W
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IXBH12N300 IXBH12N300 IXYS littelfuse-discrete-igbts-ixb-12n300-datasheet?assetguid=cccdaa0c-6cbc-4898-808c-72a3b4a08e74 Description: IGBT 3000V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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IXBF32N300 IXBF32N300 IXYS DS100119(IXBF32N300).pdf Description: IGBT 3000V 40A 160W ISOPLUSI4
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IXBT12N300 IXBT12N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf Description: IGBT 3000V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268AA
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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IXBF12N300 IXBF12N300 IXYS IXBF12N300.pdf Description: IGBT 3000V 26A 125W ISOPLUSI4
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IXBK55N300 IXBK55N300 IXYS Description: IGBT 3000V 130A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
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IXBT20N300 IXBT20N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf Description: IGBT 3000V 50A 250W TO268
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Description: IGBT 3000V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
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IXBH32N300 IXBH32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXBT32N300 IXBT32N300 IXYS littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf Description: IGBT 3000V 80A 400W TO268
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IXBX55N300 IXBX55N300 IXYS littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf Description: IGBT 3000V 130A 625W PLUS247
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8866002-T2-300 LDS8866002-T2-300 IXYS LDS8866-_Rev-N2_0.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8865002-T2-250 LDS8865002-T2-250 IXYS LDS8865_Rev-N2_1.pdf Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845-002-T2 IXYS LDS8845_Rev-N1_6.pdf Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8160-002-T2 LDS8160-002-T2 IXYS LDS8160_Rev-N1_0.pdf Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8141-002-T2 IXYS LDS8161_LDS8141_Rev-N1.pdf Description: IC LED DRVR LIN DIM 32MA 16TQFN
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IRFP260 IRFP260 IXYS Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IXFB170N30P IXFB170N30P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb170n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
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IXFB52N90P IXFB52N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb52n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN56N90P IXFN56N90P IXYS DS100066BIXFN56N90P.pdf Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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IXFR16N80P IXFR16N80P IXYS Description: MOSFET N-CH ISOPLUS247
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IXFR40N90P IXFR40N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 21A ISOPLUS247
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IXGB200N60B3 IXGB200N60B3 IXYS littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXTC62N15P IXYS 99622.pdf Description: MOSFET N-CH ISOPLUS-220
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IXTP18N60PM IXTP18N60PM IXYS Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTQ28N15P IXTQ28N15P IXYS Reliability2008.pdf Description: MOSFET N-CH TO-3P
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IXTR62N15P IXTR62N15P IXYS 99622.pdf Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU2N80P IXTU2N80P IXYS DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf Description: MOSFET N-CH TO-251
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IXTY4N60P IXTY4N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 4A TO252
Produkt ist nicht verfügbar
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IXTV02N250S IXYS IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN320N17T2 IXFN320N17T2 IXYS DS100189(IXFN320N17T2).pdf Description: MOSFET N-CH 170V 260A SOT227
Produkt ist nicht verfügbar
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IXFN52N90P IXFN52N90P IXYS Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT18N90P IXFT18N90P IXYS Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90P IXFV12N90P IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90P IXFV18N90P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS220
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IXFX240N15T2 IXFX240N15T2 IXYS Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90PS IXYS IXF(H,V)12N90P(S).pdf Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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IXFV18N90PS IXFV18N90PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf Description: MOSFET N-CH 900V 18A PLUS-220SMD
Produkt ist nicht verfügbar
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IXDN509D1T/R IXYS DS99670.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IXGH25N250 IXGH25N250 IXYS media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
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IXGX75N250 IXGX75N250 IXYS DS99826B(IXGK-X75N250).pdf Description: IGBT 2500V 170A 780W PLUS247
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IXTV03N400S IXYS DS100214A-(IXTH_V03N400_S).pdf Description: MOSFET N-CH 4000V .3A PLUS 220
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IXFT42N50P2 IXFT42N50P2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 100 Stücke:
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1+18.5 EUR
10+16.71 EUR
100+13.84 EUR
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IXGH36N60B3C1 littelfuse_discrete_igbts_pt_ixgh36n60b3c1_datasheet.pdf.pdf
IXGH36N60B3C1
Hersteller: IXYS
Description: IGBT 600V 75A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/125ns
Switching Energy: 390µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXGH48N60B3C1 littelfuse_discrete_igbts_pt_ixgh48n60b3c1_datasheet.pdf.pdf
IXGH48N60B3C1
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 450µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGH48N60C3C1
IXGH48N60C3C1
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 330µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXGK100N170 littelfuse-discrete-igbts-ixg-100n170-datasheet?assetguid=d50514ee-b55f-4642-987d-987526d4ab03
IXGK100N170
Hersteller: IXYS
Description: IGBT 1700V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 35ns/285ns
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 425 nC
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 830 W
auf Bestellung 244 Stücke:
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Anzahl Preis
1+96.22 EUR
25+72.45 EUR
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IXBH2N250 littelfuse_discrete_igbts_bimosfet_ixb_2n250_datasheet.pdf.pdf
IXBH2N250
Hersteller: IXYS
Description: IGBT 2500V 5A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-247AD
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
auf Bestellung 417 Stücke:
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Anzahl Preis
1+40.71 EUR
30+28.45 EUR
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IXBT2N250 littelfuse-discrete-igbts-ixb-2n250-datasheet?assetguid=42cb674d-92ab-4b5a-a58c-89fd6d0de934
IXBT2N250
Hersteller: IXYS
Description: IGBT 2500V 5A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268AA
Gate Charge: 10.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
auf Bestellung 173 Stücke:
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Anzahl Preis
1+36.03 EUR
30+22.94 EUR
120+21.21 EUR
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IXBX25N250 littelfuse_discrete_igbts_bimosfet_ixbx25n250_datasheet.pdf.pdf
IXBX25N250
Hersteller: IXYS
Description: IGBT 2500V 55A 300W PLUS247
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1+74.85 EUR
10+69.82 EUR
100+60.63 EUR
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IXBF20N300 littelfuse_discrete_igbts_bimosfet_ixbf20n300_datasheet.pdf.pdf
IXBF20N300
Hersteller: IXYS
Description: IGBT 3000V 34A ISOPLUS I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: ISOPLUS i4-PAC™
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 150 W
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IXBH12N300 littelfuse-discrete-igbts-ixb-12n300-datasheet?assetguid=cccdaa0c-6cbc-4898-808c-72a3b4a08e74
IXBH12N300
Hersteller: IXYS
Description: IGBT 3000V 30A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-247AD
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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Anzahl Preis
1+60.37 EUR
30+40.97 EUR
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IXBF32N300 DS100119(IXBF32N300).pdf
IXBF32N300
Hersteller: IXYS
Description: IGBT 3000V 40A 160W ISOPLUSI4
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IXBT12N300 littelfuse_discrete_igbts_bimosfet_ixb_12n300_datasheet.pdf.pdf
IXBT12N300
Hersteller: IXYS
Description: IGBT 3000V 30A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Supplier Device Package: TO-268AA
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 160 W
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IXBF12N300 IXBF12N300.pdf
IXBF12N300
Hersteller: IXYS
Description: IGBT 3000V 26A 125W ISOPLUSI4
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IXBK55N300
IXBK55N300
Hersteller: IXYS
Description: IGBT 3000V 130A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.9 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Supplier Device Package: TO-264AA
Gate Charge: 335 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 625 W
auf Bestellung 408 Stücke:
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Anzahl Preis
1+169.49 EUR
25+140.4 EUR
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IXBT20N300 littelfuse_discrete_igbts_bimosfet_ixb_20n300_datasheet.pdf.pdf
IXBT20N300
Hersteller: IXYS
Description: IGBT 3000V 50A 250W TO268
Produkt ist nicht verfügbar
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IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Hersteller: IXYS
Description: IGBT 3000V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.35 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Supplier Device Package: TO-247AD
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 250 W
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IXBH32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBH32N300
Hersteller: IXYS
Description: IGBT 3000V 80A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247AD
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXBT32N300 littelfuse_discrete_igbts_bimosfet_ixbh32n300_datasheet.pdf.pdf
IXBT32N300
Hersteller: IXYS
Description: IGBT 3000V 80A 400W TO268
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IXBX55N300 littelfuse_discrete_igbts_bimosfet_ixb_55n300_datasheet.pdf.pdf
IXBX55N300
Hersteller: IXYS
Description: IGBT 3000V 130A 625W PLUS247
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Produkt ist nicht verfügbar
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
auf Bestellung 2000 Stücke:
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8866002-T2-300 LDS8866-_Rev-N2_0.pdf
LDS8866002-T2-300
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8865002-T2-250 LDS8865_Rev-N2_1.pdf
LDS8865002-T2-250
Hersteller: IXYS
Description: IC LED DRIVER RGLTR DIM 16TQFN
Produkt ist nicht verfügbar
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LDS8845-002-T2 LDS8845_Rev-N1_6.pdf
LDS8845-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 30MA 16TQFN
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
Produkt ist nicht verfügbar
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
Produkt ist nicht verfügbar
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8160-002-T2 LDS8160_Rev-N1_0.pdf
LDS8160-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 25MA 16TQFN
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LDS8141-002-T2 LDS8161_LDS8141_Rev-N1.pdf
LDS8141-002-T2
Hersteller: IXYS
Description: IC LED DRVR LIN DIM 32MA 16TQFN
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IRFP260
IRFP260
Hersteller: IXYS
Description: MOSFET N-CH 200V 46A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 28A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IXFB170N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb170n30p_datasheet.pdf.pdf
IXFB170N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 170A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: PLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFB52N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfb52n90p_datasheet.pdf.pdf
IXFB52N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 52A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN56N90P DS100066BIXFN56N90P.pdf
IXFN56N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 56A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 3mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.08 EUR
10+68.81 EUR
100+66.83 EUR
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IXFR16N80P
IXFR16N80P
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Produkt ist nicht verfügbar
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IXFR40N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr40n90p_datasheet.pdf.pdf
IXFR40N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 21A ISOPLUS247
Produkt ist nicht verfügbar
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IXGB200N60B3 littelfuse_discrete_igbts_pt_ixgb200n60b3_datasheet.pdf.pdf
IXGB200N60B3
Hersteller: IXYS
Description: IGBT 600V 75A 1250W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: PLUS264™
IGBT Type: PT
Td (on/off) @ 25°C: 44ns/310ns
Switching Energy: 1.6mJ (on), 2.9mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 1250 W
Produkt ist nicht verfügbar
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IXTC62N15P 99622.pdf
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS-220
Produkt ist nicht verfügbar
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IXTP18N60PM
IXTP18N60PM
Hersteller: IXYS
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ28N15P Reliability2008.pdf
IXTQ28N15P
Hersteller: IXYS
Description: MOSFET N-CH TO-3P
Produkt ist nicht verfügbar
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IXTR62N15P 99622.pdf
IXTR62N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU2N80P DS99595E(IXTA-IXTP-IXTU-IXTY2N80P).pdf
IXTU2N80P
Hersteller: IXYS
Description: MOSFET N-CH TO-251
Produkt ist nicht verfügbar
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IXTY4N60P littelfuse_discrete_mosfets_n-channel_standard_ixtu4n60p_datasheet.pdf.pdf
IXTY4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 4A TO252
Produkt ist nicht verfügbar
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IXTV02N250S IXTx02N250%28S%29.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 200MA PLUS220
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN320N17T2 DS100189(IXFN320N17T2).pdf
IXFN320N17T2
Hersteller: IXYS
Description: MOSFET N-CH 170V 260A SOT227
Produkt ist nicht verfügbar
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IXFN52N90P
IXFN52N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 43A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT18N90P
IXFT18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90P IXF(H,V)12N90P(S).pdf
IXFV12N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90P
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS220
Produkt ist nicht verfügbar
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IXFX240N15T2
IXFX240N15T2
Hersteller: IXYS
Description: MOSFET N-CH 150V 240A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV12N90PS IXF(H,V)12N90P(S).pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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IXFV18N90PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_18n90p_datasheet.pdf.pdf
IXFV18N90PS
Hersteller: IXYS
Description: MOSFET N-CH 900V 18A PLUS-220SMD
Produkt ist nicht verfügbar
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IXDN509D1T/R DS99670.pdf
Hersteller: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 25ns, 23ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IXGH25N250 media?resourcetype=datasheets&amp;itemid=10d8a1ba-2522-4d0a-90e5-4afbb5a37d2c&amp;filename=littelfuse_discrete_igbts_npt_ixg_25n250_datasheet.pdf
IXGH25N250
Hersteller: IXYS
Description: IGBT 2500V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IXGX75N250 DS99826B(IXGK-X75N250).pdf
IXGX75N250
Hersteller: IXYS
Description: IGBT 2500V 170A 780W PLUS247
Produkt ist nicht verfügbar
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IXTV03N400S DS100214A-(IXTH_V03N400_S).pdf
Hersteller: IXYS
Description: MOSFET N-CH 4000V .3A PLUS 220
Produkt ist nicht verfügbar
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IXFT42N50P2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_42n50p2_datasheet.pdf.pdf
IXFT42N50P2
Hersteller: IXYS
Description: MOSFET N-CH 500V 42A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.5 EUR
10+16.71 EUR
100+13.84 EUR
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