| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MDD950-22N1W | IXYS |
 Description: DIODE MODULE 2.2KV 950APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 950A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A Current - Reverse Leakage @ Vr: 50 mA @ 2200 V |
Produkt ist nicht verfügbar |
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| MDK600-12N1 | IXYS |
Description: DIODE MODULE 1.2KV 883A |
Produkt ist nicht verfügbar |
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| MDK600-14N1 | IXYS |
Description: DIODE MODULE 1.4KV 883A |
Produkt ist nicht verfügbar |
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| MDK600-16N1 | IXYS |
Description: DIODE MODULE 1.6KV 883A |
Produkt ist nicht verfügbar |
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| MDK600-18N1 | IXYS |
Description: DIODE MODULE 1.8KV 883A |
Produkt ist nicht verfügbar |
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| MDK600-20N1 | IXYS |
Description: DIODE MODULE 2KV 883A |
Produkt ist nicht verfügbar |
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| MDK600-22N1 | IXYS |
Description: DIODE MODULE 2.2KV 883A |
Produkt ist nicht verfügbar |
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| MDK950-12N1W | IXYS |
Description: DIODE MODULE 1.2KV 950A |
Produkt ist nicht verfügbar |
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| MDK950-14N1W | IXYS |
Description: DIODE MODULE 1.4KV 950A |
Produkt ist nicht verfügbar |
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| MDK950-16N1W | IXYS |
Description: DIODE MODULE 1.6KV 950A |
Produkt ist nicht verfügbar |
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| MDK950-18N1W | IXYS |
Description: DIODE MODULE 1.8KV 950A |
Produkt ist nicht verfügbar |
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| MDK950-20N1W | IXYS |
Description: DIODE MODULE 2KV 950A |
Produkt ist nicht verfügbar |
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| MDK950-22N1W | IXYS |
Description: DIODE MODULE 2.2KV 950A |
Produkt ist nicht verfügbar |
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| MDO1200-14N1 | IXYS | Description: DIODE MODULE 1.4KV Y1-CU |
Produkt ist nicht verfügbar |
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| MDO1200-16N1 | IXYS | Description: DIODE MODULE 1.6KV Y1-CU |
Produkt ist nicht verfügbar |
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| MDO1200-18N1 | IXYS | Description: DIODE MODULE 1.8KV Y1-CU |
Produkt ist nicht verfügbar |
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| MDO1200-20N1 | IXYS | Description: DIODE MODULE 2KV Y1-CU |
Produkt ist nicht verfügbar |
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| MDO1200-22N1 | IXYS | Description: DIODE MODULE 2.2KV Y1-CU |
Produkt ist nicht verfügbar |
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| MIO1200-33E11 | IXYS |
Description: IGBT MODULE SGL 1200A E11 |
Produkt ist nicht verfügbar |
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| MIO600-65E11 | IXYS |
Description: IGBT MODULE 6500V 600A E11 Packaging: Tray Package / Case: E11 Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A NTC Thermistor: No Supplier Device Package: E11 IGBT Type: NPT Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 6500 V Current - Collector Cutoff (Max): 120 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MITA30WB600TMH | IXYS |
Description: IGBT MODULE CBI MINIPACK2 |
Produkt ist nicht verfügbar |
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| MKI50-06A7T | IXYS |
Description: IGBT MODULE 600V 72A 225W E2 |
Produkt ist nicht verfügbar |
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| MKI65-06A7T | IXYS | Description: IGBT H-BRIDGE 600V E2PACK |
Produkt ist nicht verfügbar |
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| MKI75-06A7T | IXYS |
Description: IGBT H-BRIDGE 600V E2PACK |
Produkt ist nicht verfügbar |
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MPK95-06DA | IXYS |
Description: DIODE MODULE 600V 95A TO240AA |
Produkt ist nicht verfügbar |
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| MWI100-06A8T | IXYS |
Description: IGBT MODULE 600V 130A 410W E3 Packaging: Tube Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: E3 IGBT Type: NPT Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 410 W Current - Collector Cutoff (Max): 1.2 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MWI100-12A8T | IXYS | Description: IGBT SIXPACK 160A 1200V E3PACK |
Produkt ist nicht verfügbar |
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| MWI150-06A8T | IXYS | Description: IGBT SIXPACK 170A 600V E3PACK |
Produkt ist nicht verfügbar |
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| MWI200-06A8T | IXYS |
Description: IGBT MODULE 600V 225A 675W E3 Packaging: Tube Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A NTC Thermistor: No Supplier Device Package: E3 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 675 W Current - Collector Cutoff (Max): 1.8 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MWI451-17E9 | IXYS |
Description: IGBT E9PACK |
Produkt ist nicht verfügbar |
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| MWI75-12A8T | IXYS | Description: IGBT MODULE 1200V 125A 500W |
Produkt ist nicht verfügbar |
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MX879RTR | IXYS |
Description: IC PWR DRIVER 1:1 28QFN Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI, Parallel Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Rds On (Typ): 7Ohm Voltage - Load: 6V ~ 60V Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-QFN (5x5) |
Produkt ist nicht verfügbar |
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VMO1200-01F | IXYS |
Description: MOSFET N-CH 100V 1220A Y3-LI |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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VMO1600-02P | IXYS |
Description: MOSFET N-CH 200V 1900A Y3-LI |
Produkt ist nicht verfügbar |
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| XOB17-04X3 | IXYS |
Description: SENSOR MONOCRYSTALLINE MODULE |
Produkt ist nicht verfügbar |
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| XOB17-04X3-TR | IXYS |
Description: SENSOR MONOCRYSTALLINE MODULE |
Produkt ist nicht verfügbar |
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| XOB17-12X1 | IXYS |
Description: SENSOR MONOCRYSTALLINE MODULE |
Produkt ist nicht verfügbar |
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| XOB17-12X1-TR | IXYS |
Description: SENSOR MONOCRYSTALLINE MODULE |
Produkt ist nicht verfügbar |
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| XOD17-04B | IXYS |
Description: SENSOR MONOCRYSTALLINE MOD 6X6 |
Produkt ist nicht verfügbar |
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| XOD17-04B-TS | IXYS |
Description: SENSOR MONOCRYSTALLINE MOD 6X6 |
Produkt ist nicht verfügbar |
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| XOD17-12B | IXYS |
Description: SENSOR MONOCRYSTALLINE MOD 6X20 |
Produkt ist nicht verfügbar |
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| XOD17-12B-TS | IXYS |
Description: SENSOR MONOCRYSTALLINE MOD 6X20 |
Produkt ist nicht verfügbar |
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| XOD17-34B | IXYS |
Description: SENS MONOCRYSTALLINE MOD 18.5SQ |
Produkt ist nicht verfügbar |
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| XOD17-34B-TS | IXYS |
Description: SENS MONOCRYSTALLINE MOD 18.5SQ |
Produkt ist nicht verfügbar |
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| XOD17-68B | IXYS |
Description: MONOCRYST SOLAR CELL 112MW 630MV |
Produkt ist nicht verfügbar |
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IXTQ30N50L2 | IXYS |
Description: MOSFET N-CH 500V 30A TO3P |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK210N17T | IXYS |
Description: MOSFET N-CH 170V 210A TO264AA |
Produkt ist nicht verfügbar |
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.jpg "IXFX210N17T") |
IXFX210N17T | IXYS |
Description: MOSFET N-CH 170V 210A PLUS247-3 |
Produkt ist nicht verfügbar |
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IXFN260N17T | IXYS |
Description: MOSFET N-CH 170V 245A SOT-227 |
Produkt ist nicht verfügbar |
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IXFK260N17T | IXYS |
Description: MOSFET N-CH 170V 260A TO-264 |
Produkt ist nicht verfügbar |
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IXFX260N17T | IXYS |
Description: MOSFET N-CH 170V 260A PLUS247 |
Produkt ist nicht verfügbar |
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IXFX170N20T | IXYS |
Description: MOSFET N-CH 200V 170A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 1150W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX230N20T | IXYS |
Description: MOSFET N-CH 200V 230A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN230N20T | IXYS |
Description: MOSFET N-CH 200V 220A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Power Dissipation (Max): 1090W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN180N25T | IXYS |
Description: MOSFET N-CH 250V 168A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 900W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK180N25T | IXYS |
Description: MOSFET N-CH 250V 180A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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.jpg "IXFX180N25T") |
IXFX180N25T | IXYS |
Description: MOSFET N-CH 250V 180A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Power Dissipation (Max): 1390W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
auf Bestellung 574 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX140N25T | IXYS |
Description: MOSFET N-CH 250V 140A PLUS247-3 |
Produkt ist nicht verfügbar |
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IXFK120N30T | IXYS |
Description: MOSFET N-CH 300V 120A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX120N30T | IXYS |
Description: MOSFET N-CH 300V 120A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V |
Produkt ist nicht verfügbar |
| MDD950-22N1W |
|
Hersteller: IXYS
Description: DIODE MODULE 2.2KV 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2200 V
Description: DIODE MODULE 2.2KV 950A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2200 V
Produkt ist nicht verfügbar
| MIO600-65E11 |
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Hersteller: IXYS
Description: IGBT MODULE 6500V 600A E11
Packaging: Tray
Package / Case: E11
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: E11
IGBT Type: NPT
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector Cutoff (Max): 120 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Description: IGBT MODULE 6500V 600A E11
Packaging: Tray
Package / Case: E11
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: E11
IGBT Type: NPT
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Current - Collector Cutoff (Max): 120 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Produkt ist nicht verfügbar
| MWI100-06A8T |
Hersteller: IXYS
Description: IGBT MODULE 600V 130A 410W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 410 W
Current - Collector Cutoff (Max): 1.2 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: IGBT MODULE 600V 130A 410W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 410 W
Current - Collector Cutoff (Max): 1.2 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
| MWI100-12A8T |
Hersteller: IXYS
Description: IGBT SIXPACK 160A 1200V E3PACK
Description: IGBT SIXPACK 160A 1200V E3PACK
Produkt ist nicht verfügbar
| MWI200-06A8T |
Hersteller: IXYS
Description: IGBT MODULE 600V 225A 675W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 600V 225A 675W E3
Packaging: Tube
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 675 W
Current - Collector Cutoff (Max): 1.8 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
| MX879RTR |
|
Hersteller: IXYS
Description: IC PWR DRIVER 1:1 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Rds On (Typ): 7Ohm
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-QFN (5x5)
Description: IC PWR DRIVER 1:1 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI, Parallel
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Rds On (Typ): 7Ohm
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-QFN (5x5)
Produkt ist nicht verfügbar
| VMO1200-01F |
|
Hersteller: IXYS
Description: MOSFET N-CH 100V 1220A Y3-LI
Description: MOSFET N-CH 100V 1220A Y3-LI
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 303.6 EUR |
| 10+ | 302.55 EUR |
| XOB17-04X3-TR |
|
Hersteller: IXYS
Description: SENSOR MONOCRYSTALLINE MODULE
Description: SENSOR MONOCRYSTALLINE MODULE
Produkt ist nicht verfügbar
| XOB17-12X1-TR |
|
Hersteller: IXYS
Description: SENSOR MONOCRYSTALLINE MODULE
Description: SENSOR MONOCRYSTALLINE MODULE
Produkt ist nicht verfügbar
| XOD17-04B-TS |
|
Hersteller: IXYS
Description: SENSOR MONOCRYSTALLINE MOD 6X6
Description: SENSOR MONOCRYSTALLINE MOD 6X6
Produkt ist nicht verfügbar
| XOD17-12B-TS |
|
Hersteller: IXYS
Description: SENSOR MONOCRYSTALLINE MOD 6X20
Description: SENSOR MONOCRYSTALLINE MOD 6X20
Produkt ist nicht verfügbar
| XOD17-34B-TS |
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Hersteller: IXYS
Description: SENS MONOCRYSTALLINE MOD 18.5SQ
Description: SENS MONOCRYSTALLINE MOD 18.5SQ
Produkt ist nicht verfügbar
| IXTQ30N50L2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A TO3P
Description: MOSFET N-CH 500V 30A TO3P
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)| IXFX210N17T |
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Hersteller: IXYS
Description: MOSFET N-CH 170V 210A PLUS247-3
Description: MOSFET N-CH 170V 210A PLUS247-3
Produkt ist nicht verfügbar
| IXFX170N20T |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
Description: MOSFET N-CH 200V 170A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 1150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
Produkt ist nicht verfügbar
| IXFX230N20T |
|
Hersteller: IXYS
Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 230A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1670W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
| IXFN230N20T |
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Hersteller: IXYS
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
Power Dissipation (Max): 1090W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
| IXFN180N25T |
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Hersteller: IXYS
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 168A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 900W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
| IXFK180N25T |
|
Hersteller: IXYS
Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.5 EUR |
| 25+ | 25.51 EUR |
| 100+ | 24.01 EUR |
| IXFX180N25T |
|
Hersteller: IXYS
Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Description: MOSFET N-CH 250V 180A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 574 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 30.91 EUR |
| 10+ | 27.23 EUR |
| 100+ | 23.55 EUR |
| 500+ | 21.35 EUR |
| IXFX140N25T |
|
Hersteller: IXYS
Description: MOSFET N-CH 250V 140A PLUS247-3
Description: MOSFET N-CH 250V 140A PLUS247-3
Produkt ist nicht verfügbar
| IXFK120N30T |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 120A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar
| IXFX120N30T |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Description: MOSFET N-CH 300V 120A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
Produkt ist nicht verfügbar