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Technische Details IXTY1N80P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns, Type of transistor: N-MOSFET, Power dissipation: 42W, Case: TO252, Mounting: SMD, Gate charge: 9nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: standard power mosfet, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 1A, Reverse recovery time: 700ns, On-state resistance: 14Ω.
Weitere Produktangebote IXTY1N80P
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IXTY1N80P | Hersteller : IXYS |
 MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A |
Produkt ist nicht verfügbar |
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IXTY1N80P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Power dissipation: 42W Case: TO252 Mounting: SMD Gate charge: 9nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Reverse recovery time: 700ns On-state resistance: 14Ω |
Produkt ist nicht verfügbar |