Technische Details IXTY1N80P Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 1A, Case: TO252, On-state resistance: 14Ω, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Power dissipation: 42W, Features of semiconductor devices: standard power mosfet, Gate charge: 9nC, Reverse recovery time: 700ns, Anzahl je Verpackung: 350 Stücke.
Weitere Produktangebote IXTY1N80P
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IXTY1N80P | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Case: TO252 On-state resistance: 14Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 42W Features of semiconductor devices: standard power mosfet Gate charge: 9nC Reverse recovery time: 700ns Anzahl je Verpackung: 350 Stücke |
Produkt ist nicht verfügbar |
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IXTY1N80P | Hersteller : IXYS |
Description: MOSFET N-CH 800V 1A TO252 |
Produkt ist nicht verfügbar |
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IXTY1N80P | Hersteller : IXYS |
MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A |
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IXTY1N80P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Case: TO252 On-state resistance: 14Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Power dissipation: 42W Features of semiconductor devices: standard power mosfet Gate charge: 9nC Reverse recovery time: 700ns |
Produkt ist nicht verfügbar |