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Technische Details IXTY1N80P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns, Type of transistor: N-MOSFET, Power dissipation: 42W, Case: TO252, Mounting: SMD, Gate charge: 9nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: standard power mosfet, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 1A, Reverse recovery time: 700ns, On-state resistance: 14Ω.
Weitere Produktangebote IXTY1N80P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTY1N80P | IXYS |
 MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTY1N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns Type of transistor: N-MOSFET Power dissipation: 42W Case: TO252 Mounting: SMD Gate charge: 9nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Reverse recovery time: 700ns On-state resistance: 14Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTY1N80P |
|
Hersteller: IXYS
MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A
MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTY1N80P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 42W; TO252; 700ns
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO252
Mounting: SMD
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Reverse recovery time: 700ns
On-state resistance: 14Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH