IXTT16N10D2

Description: MOSFET N-CH 100V 16A TO268, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-268AA, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V.