Produkte > IXT

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXT-1-1N100S1IXYSMOSFET 1.5 Amps 1000V 11 Ohms Rds
Produkt ist nicht verfügbar
IXT-1-1N100S1IXYSDescription: MOSFET N-CH 1000V 1.5A 8-SOIC
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
IXT-1-1N100S1 T/RIxys Corporation- 8-Pin SOIC
Produkt ist nicht verfügbar
IXT-1-1N100S1-TRIXYSMOSFET 1.5 Amps 1000V 11 Ohms Rds
Produkt ist nicht verfügbar
IXT-1-1N100S1-TRIXYSDescription: MOSFET N-CH 1000V 1.5A 8-SOIC
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
IXT-705ATPlanetDescription: INDUSTRIAL 10G/5G/2.5G/1G/100M C
Packaging: Box
Connector Type: RJ45, SFP
Mounting Type: DIN Rail
Voltage - Input: 12 ~ 24VAC, 48VDC
Configuration: Fixed + SFP
Operating Temperature: -40°C ~ 75°C
Ingress Protection: IP30
Fiber Type: SFP
Copper Type: 10/100/1000
Fiber Ports: 1
SFP/XFP Ports: 1 (SFP)
Distance: 300M
Part Status: Active
Copper Ports: 1
auf Bestellung 55 Stücke:
Lieferzeit 21-28 Tag (e)
1+826.8 EUR
IXTA02N250IXYSDescription: MOSFET N-CH 2500V 0.2A TO263
Produkt ist nicht verfügbar
IXTA02N250HVLittelfuseTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
Produkt ist nicht verfügbar
IXTA02N250HVIXYSMOSFET SMD N-CHANNEL POWER MOSFET
auf Bestellung 1129 Stücke:
Lieferzeit 14-28 Tag (e)
2+28.96 EUR
10+ 25.58 EUR
25+ 25.09 EUR
50+ 24.28 EUR
100+ 22.52 EUR
250+ 22.15 EUR
500+ 20.46 EUR
Mindestbestellmenge: 2
IXTA02N250HVLittelfuseTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
7+22.39 EUR
10+ 19.38 EUR
25+ 18.48 EUR
50+ 16.78 EUR
100+ 13.9 EUR
Mindestbestellmenge: 7
IXTA02N250HVLITTELFUSEDescription: LITTELFUSE - IXTA02N250HV - Leistungs-MOSFET, n-Kanal, 2.5 kV, 200 mA, 450 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 2.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 450ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA02N250HVIXYSDescription: MOSFET N-CH 2500V 200MA TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Produkt ist nicht verfügbar
IXTA02N250HVIXYSIXTA02N250HV SMD N channel transistors
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.44 EUR
7+ 10.57 EUR
Mindestbestellmenge: 5
IXTA02N450HVIXYSDescription: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
IXTA02N450HVLittelfuseTrans MOSFET N-CH 4.5KV 0.2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
IXTA05N100LittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA05N100IXYSMOSFET 0.75 Amps 1000V 15 Rds
Produkt ist nicht verfügbar
IXTA05N100LittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100IXYSDescription: MOSFET N-CH 1000V 750MA TO263
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
50+10.59 EUR
Mindestbestellmenge: 50
IXTA05N100-TRLIXYSMOSFET IXTA05N100 TRL
Produkt ist nicht verfügbar
IXTA05N100-TRLIXYSDescription: MOSFET N-CH 1000V 750MA TO263
Produkt ist nicht verfügbar
IXTA05N100-TRLLittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA05N100HVIXYSMOSFET High Voltage Power MOSFET
auf Bestellung 1699 Stücke:
Lieferzeit 605-619 Tag (e)
5+11.54 EUR
10+ 9.7 EUR
50+ 9.15 EUR
100+ 7.83 EUR
250+ 7.41 EUR
500+ 6.97 EUR
1000+ 6.01 EUR
Mindestbestellmenge: 5
IXTA05N100HVIXYSDescription: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar
IXTA05N100HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
IXTA05N100HVLittelfuseTrans MOSFET N-CH Si 1KV 0.75A
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA05N100HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
IXTA05N100HV-TRLLittelfuseHigh Voltage Power MOSFET
Produkt ist nicht verfügbar
IXTA05N100HV-TRLIXYSMOSFET IXTA05N100HV TRL
Produkt ist nicht verfügbar
IXTA05N100HV-TRLIXYSDescription: MOSFET N-CH 1000V 750MA TO263HV
Produkt ist nicht verfügbar
IXTA06N120PLITTELFUSEDescription: LITTELFUSE - IXTA06N120P - MOSFET, N-CH, 1.2KV, 0.6A, TO-263
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 600mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Polar Series
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 27ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
Produkt ist nicht verfügbar
IXTA06N120PIXYSMOSFET 0.6 Amps 1200V 32 Rds
auf Bestellung 59 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.82 EUR
10+ 10.79 EUR
50+ 8.55 EUR
Mindestbestellmenge: 5
IXTA06N120PIXYSDescription: MOSFET N-CH 1200V 600MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 389 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.71 EUR
50+ 8.49 EUR
100+ 7.28 EUR
Mindestbestellmenge: 3
IXTA06N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA06N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA06N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA06N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA06N120P TRLIxys CorporationTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLIXYSDescription: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Produkt ist nicht verfügbar
IXTA06N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLIXYSMOSFET IXTA06N120P TRL
Produkt ist nicht verfügbar
IXTA06N120P-TRLIXYSDescription: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Produkt ist nicht verfügbar
IXTA08N100D2IXYSDescription: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 3690 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.89 EUR
50+ 5.46 EUR
100+ 4.68 EUR
500+ 4.16 EUR
1000+ 3.56 EUR
2000+ 3.35 EUR
Mindestbestellmenge: 4
IXTA08N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 184 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.42 EUR
33+ 2.2 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
IXTA08N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 800MA
auf Bestellung 548 Stücke:
Lieferzeit 385-399 Tag (e)
8+6.94 EUR
10+ 5.82 EUR
50+ 5.49 EUR
Mindestbestellmenge: 8
IXTA08N100D2LITTELFUSEDescription: LITTELFUSE - IXTA08N100D2 - MOSFET, N-CH, 1KV, 0.8A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 21ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N100D2LittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
33+ 2.2 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
IXTA08N100D2-TRLIXYSMOSFET IXTA08N100D2 TRL
Produkt ist nicht verfügbar
IXTA08N100D2-TRLIXYSDescription: IXTA08N100D2 TRL
Produkt ist nicht verfügbar
IXTA08N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA08N100D2HVIXYSDescription: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 21-28 Tag (e)
50+8.19 EUR
Mindestbestellmenge: 50
IXTA08N100D2HVLITTELFUSEDescription: LITTELFUSE - IXTA08N100D2HV - Leistungs-MOSFET, n-Kanal, 1 kV, 800 mA, 21 ohm, TO-263HV, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-263HV
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 21ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA08N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXTA08N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 929 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.43 EUR
10+ 8.76 EUR
50+ 7.7 EUR
100+ 6.89 EUR
250+ 6.66 EUR
Mindestbestellmenge: 5
IXTA08N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 325nC
Kind of channel: depleted
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 21Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N100D2HV TRLIxys CorporationTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLIXYSMOSFET IXTA08N100D2HV TRL
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLIXYSDescription: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
IXTA08N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA08N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXTA08N100PIXYSDescription: MOSFET N-CH 1000V 0.8A TO-263
Produkt ist nicht verfügbar
IXTA08N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N100PLittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N100PIXYSMOSFET 0.8 Amps 1000V 20 Rds
Produkt ist nicht verfügbar
IXTA08N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N120PIXYSDescription: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.57 EUR
50+ 7.58 EUR
100+ 6.5 EUR
500+ 5.78 EUR
1000+ 4.95 EUR
Mindestbestellmenge: 3
IXTA08N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.8A 3-Pin(2+Tab) D2PAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N120PIXYSMOSFET 0.8 Amps 1200V 25 Rds
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.65 EUR
10+ 8.84 EUR
50+ 8.66 EUR
Mindestbestellmenge: 6
IXTA08N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA08N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
IXTA08N50D2IXYSDescription: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 905 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.89 EUR
50+ 5.46 EUR
100+ 4.68 EUR
500+ 4.16 EUR
Mindestbestellmenge: 4
IXTA08N50D2
Produktcode: 118357		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA08N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N50D2LittelfuseTrans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) TO-263AA
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 800MA
auf Bestellung 754 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.94 EUR
10+ 5.82 EUR
50+ 4.86 EUR
100+ 4.34 EUR
250+ 4.16 EUR
500+ 4.08 EUR
1000+ 3.9 EUR
Mindestbestellmenge: 8
IXTA100N04T2IXYSDescription: MOSFET N-CH 40V 100A TO263
Produkt ist nicht verfügbar
IXTA100N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA100N04T2LittelfuseTrans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA100N04T2IXYSMOSFET 100 Amps 40V
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
10+ 5.9 EUR
100+ 4.99 EUR
250+ 4.63 EUR
500+ 4.32 EUR
1000+ 3.85 EUR
2500+ 3.64 EUR
Mindestbestellmenge: 8
IXTA100N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
IXTA100N04T2-TRLIXYSMOSFET IXTA100N04T2 TRL
Produkt ist nicht verfügbar
IXTA100N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 16 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.04 EUR
10+ 21.45 EUR
50+ 19.92 EUR
100+ 17.5 EUR
250+ 16.72 EUR
Mindestbestellmenge: 3
IXTA100N15X4IXYSDescription: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2+24.13 EUR
50+ 19.25 EUR
100+ 17.23 EUR
500+ 15.2 EUR
1000+ 13.68 EUR
Mindestbestellmenge: 2
IXTA102N15TIXYSMOSFET 102 Amps 150V 18 Rds
auf Bestellung 13 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.36 EUR
10+ 9.85 EUR
50+ 9.52 EUR
100+ 8.01 EUR
250+ 7.77 EUR
500+ 7.44 EUR
Mindestbestellmenge: 5
IXTA102N15TIXYSDescription: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.6 EUR
10+ 10.42 EUR
100+ 8.53 EUR
500+ 7.26 EUR
Mindestbestellmenge: 3
IXTA102N15T-TRLLittelfuseTrans MOSFET N-CH 150V 102A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10N60PIXYSDescription: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10N60PLittelfuseTrans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10N60PIXYSMOSFET 10.0 Amps 600 V 0.74 Ohm Rds
Produkt ist nicht verfügbar
IXTA10P15TIXYSMOSFET MSFT P-CH TRENCH GATE
Produkt ist nicht verfügbar
IXTA10P15TIXYSDescription: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P15T-TRLIXYSMOSFET IXTA10P15T TRL
Produkt ist nicht verfügbar
IXTA10P15T-TRLIXYSDescription: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P15T-TRLLittelfuseTrans MOSFET P-CH 150V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.42 EUR
18+ 8.63 EUR
25+ 8.23 EUR
50+ 7.85 EUR
100+ 7.46 EUR
Mindestbestellmenge: 15
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.58 EUR
18+ 8.76 EUR
25+ 8.44 EUR
50+ 7.96 EUR
100+ 7.64 EUR
Mindestbestellmenge: 15
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.67 EUR
19+ 8.01 EUR
25+ 7.71 EUR
50+ 7.27 EUR
100+ 6.98 EUR
Mindestbestellmenge: 17
IXTA10P50PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
14+ 5.18 EUR
Mindestbestellmenge: 9
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
13+12.55 EUR
25+ 11.54 EUR
50+ 10.67 EUR
100+ 9.89 EUR
250+ 9.2 EUR
Mindestbestellmenge: 13
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.42 EUR
18+ 8.63 EUR
25+ 8.23 EUR
50+ 7.85 EUR
100+ 7.46 EUR
Mindestbestellmenge: 15
IXTA10P50PIXYSMOSFET -10.0 Amps -500V 1.000 Rds
auf Bestellung 862 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.35 EUR
10+ 13.99 EUR
50+ 13.73 EUR
Mindestbestellmenge: 4
IXTA10P50PIXYSDescription: MOSFET P-CH 500V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA10P50PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 287 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
14+ 5.18 EUR
Mindestbestellmenge: 9
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA10P50P - Leistungs-MOSFET, p-Kanal, 500 V, 10 A, 1 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50P-TRLIXYSDescription: MOSFET P-CH 500V 10A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 76877 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
10+ 13.62 EUR
100+ 11.35 EUR
Mindestbestellmenge: 2
IXTA10P50P-TRLIXYSMOSFET MSFT P-CH POLAR
auf Bestellung 1304 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.02 EUR
10+ 13.7 EUR
25+ 12.82 EUR
100+ 11.44 EUR
250+ 11.08 EUR
500+ 10.24 EUR
800+ 9.31 EUR
Mindestbestellmenge: 4
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.22 EUR
18+ 8.38 EUR
25+ 7.48 EUR
100+ 6.36 EUR
250+ 5.95 EUR
500+ 4.53 EUR
Mindestbestellmenge: 16
IXTA10P50P-TRLIXYSDescription: MOSFET P-CH 500V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 76000 Stücke:
Lieferzeit 21-28 Tag (e)
800+10.02 EUR
1600+ 9.02 EUR
2400+ 8.45 EUR
Mindestbestellmenge: 800
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+6 EUR
Mindestbestellmenge: 800
IXTA10P50P-TRLLITTELFUSEDescription: LITTELFUSE - IXTA10P50P-TRL - MOSFET, P-CH, 500V, 10A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.47 EUR
Mindestbestellmenge: 800
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.22 EUR
18+ 8.38 EUR
25+ 7.48 EUR
100+ 6.36 EUR
250+ 5.95 EUR
500+ 4.53 EUR
Mindestbestellmenge: 16
IXTA110N055PIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 500mA, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N055TIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
IXTA110N055T2LittelfuseTrans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA110N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA110N055T2IXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.89 EUR
50+ 5.46 EUR
100+ 4.68 EUR
Mindestbestellmenge: 4
IXTA110N055T2IXYSMOSFET 110 Amps 55V 0.0066 Rds
auf Bestellung 11 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.6 EUR
10+ 5.95 EUR
100+ 4.68 EUR
250+ 4.45 EUR
500+ 4.16 EUR
1000+ 3.61 EUR
Mindestbestellmenge: 8
IXTA110N055T2-TRLIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+4.16 EUR
Mindestbestellmenge: 800
IXTA110N055T2-TRLIXYSMOSFET IXTA110N055T2 TRL
Produkt ist nicht verfügbar
IXTA110N055T2-TRLLittelfuseTrans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA110N055T7IXYSMOSFET 110 Amps 55V 6.7 Rds
Produkt ist nicht verfügbar
IXTA110N055T7IXYSDescription: MOSFET N-CH 55V 110A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA110N12T2IXYSDescription: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
Produkt ist nicht verfügbar
IXTA120N04T2IXYSDescription: MOSFET N-CH 40V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
auf Bestellung 1950 Stücke:
Lieferzeit 21-28 Tag (e)
300+4.37 EUR
Mindestbestellmenge: 300
IXTA120N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
IXTA120N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
8+ 8.94 EUR
22+ 3.25 EUR
Mindestbestellmenge: 3
IXTA120N04T2IXYSMOSFET 120 Amps 40V
Produkt ist nicht verfügbar
IXTA120N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.53 EUR
18+ 4.08 EUR
20+ 3.58 EUR
Mindestbestellmenge: 16
IXTA120N075T2IXYSMOSFET 120 Amps 75V
Produkt ist nicht verfügbar
IXTA120N075T2IXYSDescription: MOSFET N-CH 75V 120A TO263
auf Bestellung 2950 Stücke:
Lieferzeit 21-28 Tag (e)
50+9.26 EUR
Mindestbestellmenge: 50
IXTA120N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.53 EUR
18+ 4.08 EUR
20+ 3.58 EUR
Mindestbestellmenge: 16
IXTA120P065TLittelfuseTrans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA120P065TIXYSDescription: MOSFET P-CH 65V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA120P065TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.56 EUR
11+ 6.81 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA120P065TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.56 EUR
11+ 6.81 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA120P065TIXYSMOSFET -120 Amps -65V 0.01 Rds
auf Bestellung 7797 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.44 EUR
10+ 13.99 EUR
100+ 11.57 EUR
250+ 11.23 EUR
500+ 10.19 EUR
Mindestbestellmenge: 4
IXTA120P065T-TRLIXYSMOSFET IXTA120P065T TRL
Produkt ist nicht verfügbar
IXTA120P065T-TRLIXYSDescription: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA120P065TTRLLittelfuseTrans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXTA12N50PIXYSMOSFET 12.0 Amps 500 V 0.5 Ohm Rds
auf Bestellung 544 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.46 EUR
10+ 7.93 EUR
50+ 7.64 EUR
100+ 6.4 EUR
250+ 6.29 EUR
500+ 5.69 EUR
1000+ 4.94 EUR
Mindestbestellmenge: 6
IXTA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA12N50PLittelfuseTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA12N50PIXYSDescription: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 524 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.28 EUR
50+ 7.35 EUR
100+ 6.3 EUR
500+ 5.6 EUR
Mindestbestellmenge: 3
IXTA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA12N65X2LittelfuseTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA12N65X2IXYSDescription: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXTA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
IXTA12N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA12N70X2IXYSMOSFET DiscMSFT NChUltraJnctn X2Class TO-263D2
Produkt ist nicht verfügbar
IXTA130N065T2LittelfuseTrans MOSFET N-CH 65V 130A Automotive 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA130N065T2IXYSDescription: MOSFET N-CH 65V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA130N065T2IXYSMOSFET 130 Amps 65V
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10TLITTELFUSEDescription: LITTELFUSE - IXTA130N10T - MOSFET, N-CH, 100V, 130A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 130
Qualifikation: -
Verlustleistung Pd: 360
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 360
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: TrenchMV Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.0091
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0091
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA130N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10TIXYSDescription: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10TIXYSMOSFET 130 Amps 100V 8.5 Rds
Produkt ist nicht verfügbar
IXTA130N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSMOSFET IXTA130N10T TRL
auf Bestellung 798 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.27 EUR
10+ 10.32 EUR
25+ 9.75 EUR
100+ 8.37 EUR
250+ 7.88 EUR
500+ 7.77 EUR
800+ 6.47 EUR
Mindestbestellmenge: 5
IXTA130N10T-TRLIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSDescription: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSDescription: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXTA130N10T7IXYSDescription: MOSFET N-CH 100V 130A TO263
auf Bestellung 300 Stücke:
Lieferzeit 21-28 Tag (e)
50+10.14 EUR
Mindestbestellmenge: 50
IXTA130N10T7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10T7IXYSMOSFET 130 Amps 100V 8.5 Rds
Produkt ist nicht verfügbar
IXTA130N10T7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10TTRLIxys CorporationTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA130N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 70 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.42 EUR
10+ 29.28 EUR
50+ 27.92 EUR
100+ 24.23 EUR
Mindestbestellmenge: 2
IXTA130N15X4IXYSDescription: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
auf Bestellung 1524 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.22 EUR
50+ 21.75 EUR
100+ 19.46 EUR
500+ 17.17 EUR
1000+ 15.45 EUR
IXTA130N15X4-7IXYSDescription: MOSFET N-CH 150V 130A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.22 EUR
50+ 21.75 EUR
100+ 19.46 EUR
500+ 17.17 EUR
1000+ 15.45 EUR
IXTA130N15X4-7IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 35 Stücke:
Lieferzeit 14-28 Tag (e)
2+28.81 EUR
10+ 26 EUR
50+ 24.8 EUR
100+ 21.5 EUR
Mindestbestellmenge: 2
IXTA140N055T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA140N055T2IXYSDescription: MOSFET N-CH 55V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
300+4.79 EUR
Mindestbestellmenge: 300
IXTA140N12T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA140N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
IXTA140N12T2LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXTA140N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.94 EUR
10+ 7.15 EUR
Mindestbestellmenge: 8
IXTA140N12T2IXYSDescription: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
auf Bestellung 1400 Stücke:
Lieferzeit 21-28 Tag (e)
50+12.5 EUR
Mindestbestellmenge: 50
IXTA140P05TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA140P05TIXYSDescription: MOSFET P-CH 50V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 712 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.41 EUR
10+ 15.78 EUR
100+ 13.15 EUR
500+ 11.6 EUR
Mindestbestellmenge: 2
IXTA140P05TIXYSMOSFET -140 Amps -50V 0.008 Rds
auf Bestellung 207 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.02 EUR
10+ 15.6 EUR
50+ 14.69 EUR
100+ 13.68 EUR
250+ 13.39 EUR
500+ 12.82 EUR
Mindestbestellmenge: 3
IXTA140P05TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
IXTA140P05TLittelfuseTrans MOSFET P-CH 50V 140A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA140P05T-TRLLittelfuseMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXTA140P05T-TRLIXYSDescription: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Produkt ist nicht verfügbar
IXTA14N60PIXYSDescription: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.39 EUR
50+ 9.02 EUR
100+ 7.73 EUR
Mindestbestellmenge: 3
IXTA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA14N60PIXYSMOSFET 14.0 Amps 600 V 0.55 Ohm Rds
Produkt ist nicht verfügbar
IXTA14N60PTRLLittelfuseIXTA14N60PTRL
Produkt ist nicht verfügbar
IXTA150N15X4LittelfuseX4-Class Power MOSFET
Produkt ist nicht verfügbar
IXTA150N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 101 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.06 EUR
10+ 28.63 EUR
50+ 25.87 EUR
Mindestbestellmenge: 2
IXTA150N15X4IXYSDescription: MOSFET N-CH 150V 150A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.82 EUR
50+ 25.78 EUR
100+ 24.26 EUR
IXTA150N15X4-7IXYSDescription: MOSFET N-CH 150V 150A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA150N15X4-7LittelfuseX4-Class Power MOSFET
Produkt ist nicht verfügbar
IXTA150N15X4-7IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXTA152N085TIXYSDescription: MOSFET N-CH 85V 152A TO-263
Produkt ist nicht verfügbar
IXTA152N085T7IXYSDescription: MOSFET N-CH 85V 152A TO-263-7
Produkt ist nicht verfügbar
IXTA15N50L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA15N50L2IXYSDescription: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 350 Stücke:
Lieferzeit 21-28 Tag (e)
1+32.45 EUR
50+ 26.27 EUR
100+ 24.72 EUR
IXTA15N50L2LittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA15N50L2LittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA15N50L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 279 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.68 EUR
10+ 28.81 EUR
25+ 28.03 EUR
50+ 26.42 EUR
100+ 25.45 EUR
Mindestbestellmenge: 2
IXTA15N50L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
IXTA15N50L2-TRLIXYSMOSFET IXTA15N50L2 TRL
Produkt ist nicht verfügbar
IXTA15N50L2-TRLIXYSDescription: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA15N50L2-TRLLittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA15P15TIXYSDescription: MOSFET P-CH 150V 15A TO-263
Produkt ist nicht verfügbar
IXTA15P15TLittelfuseTrans MOSFET P-CH 150V 15A 3-Pin(2+Tab) TO-263
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA15P15TIXYSMOSFET TenchP Power MOSFET
Produkt ist nicht verfügbar
IXTA15P15TIXYSIXTA15P15T SMD P channel transistors
Produkt ist nicht verfügbar
IXTA15P15T-A2IXYSMOSFET -150V -15A
Produkt ist nicht verfügbar
IXTA160N04T2IXYSDescription: MOSFET N-CH 40V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.04 EUR
10+ 8.43 EUR
100+ 6.82 EUR
500+ 6.07 EUR
Mindestbestellmenge: 3
IXTA160N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
24+ 3.09 EUR
25+ 2.92 EUR
Mindestbestellmenge: 17
IXTA160N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
24+ 3.09 EUR
25+ 2.92 EUR
Mindestbestellmenge: 17
IXTA160N04T2IXYSMOSFET 160Amps 40V
auf Bestellung 66 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.14 EUR
10+ 8.89 EUR
50+ 7.54 EUR
100+ 6.86 EUR
250+ 6.06 EUR
500+ 5.85 EUR
1000+ 5.64 EUR
Mindestbestellmenge: 6
IXTA160N075TIXYSMOSFET 160 Amps 75V 5.5 Rds
Produkt ist nicht verfügbar
IXTA160N075TIXYSDescription: MOSFET N-CH 75V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N075T7IXYSMOSFET 160 Amps 75V 5.5 Rds
Produkt ist nicht verfügbar
IXTA160N075T7IXYSDescription: MOSFET N-CH 75V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N085TIXYSDescription: MOSFET N-CH 85V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N10TLittelfuseTrans MOSFET N-CH 100V 160A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA160N10TIXYSDescription: MOSFET N-CH 100V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N10TIXYSMOSFET 160 Amps 100V 6.9 Rds
Produkt ist nicht verfügbar
IXTA160N10T7IXYSMOSFET 160 Amps 100V 6.9 Rds
Produkt ist nicht verfügbar
IXTA160N10T7IXYSDescription: MOSFET N-CH 100V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
IXTA16N50PIXYSDescription: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 21-28 Tag (e)
300+7.24 EUR
Mindestbestellmenge: 300
IXTA16N50PIXYSMOSFET 16.0 Amps 500 V 0.4 Ohm Rds
auf Bestellung 99 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.47 EUR
10+ 9.93 EUR
50+ 8.42 EUR
100+ 7.59 EUR
250+ 7.07 EUR
500+ 6.81 EUR
1000+ 6.47 EUR
Mindestbestellmenge: 5
IXTA16N50P-TRLIXYSDescription: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
IXTA16N50P-TRLIXYSMOSFET IXTA16N50P TRL
Produkt ist nicht verfügbar
IXTA16N50PTRLLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA170N075T2IXYSMOSFET 170 Amps 75V
Produkt ist nicht verfügbar
IXTA170N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA170N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Produkt ist nicht verfügbar
IXTA170N075T2IXYSDescription: MOSFET N-CH 75V 170A TO263
auf Bestellung 2050 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA180N055TIXYSDescription: MOSFET N-CH 55V 180A TO263
Produkt ist nicht verfügbar
IXTA180N085TIXYSDescription: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N085T7IXYSDescription: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10TIXYSDescription: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 6426 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.17 EUR
50+ 11.22 EUR
100+ 9.62 EUR
500+ 8.55 EUR
1000+ 7.32 EUR
2000+ 6.89 EUR
Mindestbestellmenge: 2
IXTA180N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.08 EUR
14+ 5.48 EUR
17+ 4.36 EUR
18+ 4.12 EUR
Mindestbestellmenge: 12
IXTA180N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
14+ 5.48 EUR
17+ 4.36 EUR
18+ 4.12 EUR
Mindestbestellmenge: 12
IXTA180N10TLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA180N10TIXYSMOSFET 180 Amps 100V 6.1 Rds
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.27 EUR
10+ 12.9 EUR
50+ 9.83 EUR
100+ 8.89 EUR
250+ 8.76 EUR
500+ 8.11 EUR
1000+ 8.06 EUR
Mindestbestellmenge: 4
IXTA180N10TLITTELFUSEDescription: LITTELFUSE - IXTA180N10T - MOSFET, N-CH, 100V, 180A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 180
Qualifikation: -
Verlustleistung Pd: 480
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 480
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: Trench Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.0057
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0057
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA180N10T-TRLIXYSMOSFET IXTA180N10T TRL
auf Bestellung 540 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.27 EUR
10+ 11.99 EUR
25+ 11.6 EUR
100+ 9.7 EUR
250+ 9.41 EUR
500+ 8.63 EUR
800+ 7.44 EUR
Mindestbestellmenge: 4
IXTA180N10T-TRLIXYSDescription: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 2383 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.17 EUR
10+ 11.89 EUR
100+ 9.62 EUR
Mindestbestellmenge: 2
IXTA180N10T-TRLIXYSDescription: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+8.55 EUR
Mindestbestellmenge: 800
IXTA180N10T-TRLLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA180N10T7LittelfuseTrans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA180N10T7IXYSMOSFET 180 Amps 100V 6.1 Rds
Produkt ist nicht verfügbar
IXTA180N10T7IXYSDescription: MOSFET N-CH 100V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10T7-TRLIXYSMOSFET IXTA180N10T7 TRL
Produkt ist nicht verfügbar
IXTA180N10T7-TRLIXYSDescription: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10TTRLLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA182N055TIXYSMOSFET 182 Amps 55V 4.4 Rds
Produkt ist nicht verfügbar
IXTA182N055TIXYSDescription: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
IXTA182N055T7IXYSMOSFET 182 Amps 55V 4.4 Rds
Produkt ist nicht verfügbar
IXTA182N055T7IXYSDescription: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
IXTA18P10TIXYSMOSFET 18 Amps 100V 0.12 Rds
Produkt ist nicht verfügbar
IXTA18P10TIXYSDescription: MOSFET P-CH 100V 18A TO-263
Produkt ist nicht verfügbar
IXTA18P10TLittelfuseTrans MOSFET P-CH 100V 18A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA18P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA18P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Produkt ist nicht verfügbar
IXTA1970-TRLLittelfuseLittelfuse IXTA1970 TRL
Produkt ist nicht verfügbar
IXTA1970-TRLIXYSDescription: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IXTA1970TRLIxys CorporationTRENCHT2 POWER MOSFET
Produkt ist nicht verfügbar
IXTA1N100LittelfuseTrans MOSFET N-CH Si 1KV 1.5A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA1N100IXYSDescription: MOSFET N-CH 1000V 1.5A TO-263
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.74 EUR
10+ 9.63 EUR
100+ 7.89 EUR
500+ 6.72 EUR
Mindestbestellmenge: 3
IXTA1N100Ixys CorporationTrans MOSFET N-CH Si 1KV 1.5A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA1N100PIXYSDescription: MOSFET N-CH 1000V 1A TO263
auf Bestellung 52 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.12 EUR
10+ 6.39 EUR
Mindestbestellmenge: 4
IXTA1N100PLittelfuseTrans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IXTA1N100PIXYSMOSFET 1 Amps 1000V 14 Rds
auf Bestellung 300 Stücke:
Lieferzeit 484-498 Tag (e)
8+6.76 EUR
10+ 5.64 EUR
100+ 4.47 EUR
Mindestbestellmenge: 8
IXTA1N100P-TRLLittelfuseTrans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1N120PIXYSMOSFET 1 Amps 1200V 20 Rds
auf Bestellung 648 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.32 EUR
10+ 10.37 EUR
50+ 8.42 EUR
100+ 7.62 EUR
Mindestbestellmenge: 5
IXTA1N120PLittelfuseTrans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1N120PIXYSDescription: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.09 EUR
10+ 10.15 EUR
100+ 8.21 EUR
Mindestbestellmenge: 3
IXTA1N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 63W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 63W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IXTA1N120P-TRLIXYSDescription: MOSFET N-CH 1200V 1A TO263
Produkt ist nicht verfügbar
IXTA1N170DHVLITTELFUSEDescription: LITTELFUSE - IXTA1N170DHV - MOSFET, N-CH, 1.7KV, 1A, TO-263HV
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.7
Dauer-Drainstrom Id: 1
Qualifikation: -
Verlustleistung Pd: 290
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 290
Bauform - Transistor: TO-263HV
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 16
Rds(on)-Prüfspannung: 0
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 16
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 290W
Kind of channel: depleted
Reverse recovery time: 30ns
Drain-source voltage: 1.7kV
Drain current: 1A
On-state resistance: 16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 290W
Kind of channel: depleted
Reverse recovery time: 30ns
Drain-source voltage: 1.7kV
Drain current: 1A
On-state resistance: 16Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSMOSFET MSFT N-CH DEPL MODE-STD
auf Bestellung 2457 Stücke:
Lieferzeit 14-28 Tag (e)
1+52.13 EUR
10+ 46.33 EUR
50+ 39.34 EUR
250+ 38.58 EUR
500+ 37.36 EUR
IXTA1N170DHVIXYSDescription: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 21-28 Tag (e)
1+51.77 EUR
50+ 42.91 EUR
100+ 40.23 EUR
IXTA1N170DHVLittelfuseTrans MOSFET N-CH 1.7KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHVLittelfuseTrans MOSFET N-CH 1.7KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHV-TRLLittelfuseLittelfuse MOSFET DISCRETE TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHVTRLLittelfuseIXTA1N170DHVTRL
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 125W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 2.3µs
Drain-source voltage: 2kV
Drain current: 1A
On-state resistance: 40Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Mounting: SMD
Case: TO263HV
Kind of package: tube
Power dissipation: 125W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 2.3µs
Drain-source voltage: 2kV
Drain current: 1A
On-state resistance: 40Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IXTA1N200P3HVLittelfuseTrans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSDescription: MOSFET N-CH 2000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
auf Bestellung 1152 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.59 EUR
50+ 18.04 EUR
100+ 16.14 EUR
500+ 14.24 EUR
1000+ 12.82 EUR
Mindestbestellmenge: 2
IXTA1N200P3HVIXYSMOSFET 2000V/1A HV Power MOSFET, TO-263HV
auf Bestellung 3722 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.75 EUR
10+ 21.09 EUR
50+ 17.97 EUR
100+ 15.7 EUR
250+ 15.47 EUR
500+ 14.25 EUR
1000+ 12.82 EUR
Mindestbestellmenge: 3
IXTA1N200P3HV-TRLLittelfuseTrans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA1N200P3HV.LITTELFUSEDescription: LITTELFUSE - IXTA1N200P3HV. - MOSFET, N-CH, 2KV, 1A, TO-263HV
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: TO-263HV
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 40ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 27301 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA1N200P3HVTRLIXYSDescription: MOFET N-CH 2000V 1.0A TO-263HV
Produkt ist nicht verfügbar
IXTA1N200P3HVTRLIXYSDescription: MOFET N-CH 2000V 1.0A TO-263HV
auf Bestellung 172 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA1N80IXYSDescription: MOSFET N-CH 800V 750MA TO-263
Produkt ist nicht verfügbar
IXTA1R4N100PLittelfuseTrans MOSFET N-CH 1KV 1.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSMOSFET 1.4 Amps 1000V 11 Rds
auf Bestellung 486 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.72 EUR
10+ 6.47 EUR
50+ 6.08 EUR
100+ 5.23 EUR
250+ 4.94 EUR
Mindestbestellmenge: 7
IXTA1R4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSDescription: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.67 EUR
50+ 6.07 EUR
100+ 5.2 EUR
Mindestbestellmenge: 4
IXTA1R4N100PTRLIXYSMOSFET MSFT N-CH STD-POLAR
Produkt ist nicht verfügbar
IXTA1R4N100PTRLIXYSDescription: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSDescription: MOSFET N-CH 1200V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
auf Bestellung 28 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.6 EUR
10+ 11.42 EUR
Mindestbestellmenge: 2
IXTA1R4N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 86W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 24.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSMOSFET 1.4 Amps 1200V 15 Rds
auf Bestellung 75 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA1R4N120PLittelfuseTrans MOSFET N-CH 1.2KV 1.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R4N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 1.4A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1R4N120P-TRLIXYSDescription: MOSFET N-CH 1200V 1.4A TO263
Produkt ist nicht verfügbar
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
300+5.81 EUR
Mindestbestellmenge: 300
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 800MA
auf Bestellung 575 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.02 EUR
10+ 7.77 EUR
50+ 6.58 EUR
500+ 5.93 EUR
1000+ 4.86 EUR
Mindestbestellmenge: 6
IXTA1R6N100D2IXYSDescription: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.94 EUR
50+ 7.1 EUR
100+ 6.08 EUR
Mindestbestellmenge: 3
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.08 EUR
100+ 3.22 EUR
Mindestbestellmenge: 50
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N100D2IXYSIXTA1R6N100D2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRLIXYSMOSFET IXTA1R6N100D2 TRL
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 110 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.31 EUR
10+ 11.52 EUR
50+ 10.53 EUR
100+ 9.02 EUR
250+ 8.71 EUR
500+ 8.55 EUR
Mindestbestellmenge: 4
IXTA1R6N100D2HVIXYSDescription: MOSFET N-CH 1000V 1.6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
auf Bestellung 239 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.21 EUR
50+ 10.46 EUR
100+ 8.97 EUR
Mindestbestellmenge: 2
IXTA1R6N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Produkt ist nicht verfügbar
IXTA1R6N100D2HV-TRLLittelfuseIXTA1R6N100D2HV-TRL
Produkt ist nicht verfügbar
IXTA1R6N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N50D2IXYSIXTA1R6N50D2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA1R6N50D2LittelfuseTrans MOSFET N-CH 500V 1.6A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA1R6N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 1.6A
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
6+8.79 EUR
10+ 7.9 EUR
50+ 7.46 EUR
100+ 6.47 EUR
Mindestbestellmenge: 6
IXTA1R6N50D2IXYSDescription: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.94 EUR
50+ 7.1 EUR
100+ 6.08 EUR
Mindestbestellmenge: 3
IXTA200N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Produkt ist nicht verfügbar
IXTA200N055T2IXYSMOSFET 200 Amps 55V 0.0042 Rds
Produkt ist nicht verfügbar
IXTA200N055T2IXYSDescription: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.75 EUR
50+ 7.73 EUR
100+ 6.63 EUR
500+ 5.89 EUR
1000+ 5.05 EUR
Mindestbestellmenge: 3
IXTA200N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Case: TO263
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Kind of channel: enhanced
Mounting: SMD
Reverse recovery time: 49ns
Drain-source voltage: 55V
Drain current: 200A
On-state resistance: 4.2mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA200N055T2-7IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA200N055T2-7IXYSDescription: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
IXTA200N055T2-TRLLittelfuseTrans MOSFET N-CH 55V 200A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA200N055T2-TRLIXYSMOSFET IXTA200N055T2 TRL
Produkt ist nicht verfügbar
IXTA200N055T2-TRLIXYSDescription: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
IXTA200N075TIXYSDescription: MOSFET N-CH 75V 200A TO-263
Produkt ist nicht verfügbar
IXTA200N075T7IXYSDescription: MOSFET N-CH 75V 200A TO-263-7
Produkt ist nicht verfügbar
IXTA200N085TIXYSMOSFET 200 Amps 85V 5.0 Rds
Produkt ist nicht verfügbar
IXTA200N085TIXYSDescription: MOSFET N-CH 85V 200A TO263
Produkt ist nicht verfügbar
IXTA200N085T7IXYSDescription: MOSFET N-CH 85V 200A TO263-7
Produkt ist nicht verfügbar
IXTA200N085T7IXYSMOSFET 200 Amps 85V 5.0 Rds
Produkt ist nicht verfügbar
IXTA20N65XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
IXTA20N65XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA20N65XIXYSMOSFET 650V/9A Power MOSFET
Produkt ist nicht verfügbar
IXTA20N65XIXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
IXTA20N65X-TRLIXYSMOSFET IXTA20N65X TRL
Produkt ist nicht verfügbar
IXTA20N65X-TRLIXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
IXTA20N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA20N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+ 5.81 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
IXTA20N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.45 EUR
13+ 5.81 EUR
16+ 4.62 EUR
17+ 4.38 EUR
Mindestbestellmenge: 12
IXTA20N65X2IXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2IXYSMOSFET 220 Amps 40V 0.0035 Rds
Produkt ist nicht verfügbar
IXTA220N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
IXTA220N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA220N04T2IXYSDescription: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2LittelfuseTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA220N04T2LittelfuseTrans MOSFET N-CH 40V 220A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA220N04T2 TRLIxys CorporationTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSDescription: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSMOSFET 220 Amps 40V 0.0035 Rds
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
IXTA220N04T2-7TRLLittelfuseIXTA220N04T2-7TRL
Produkt ist nicht verfügbar
IXTA220N04T2-TRLLittelfuseTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA220N04T2-TRLIXYSMOSFET IXTA220N04T2 TRL
Produkt ist nicht verfügbar
IXTA220N04T2-TRLIXYSDescription: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N055TIXYSDescription: MOSFET N-CH 55V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N055T7IXYSDescription: MOSFET N-CH 55V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N075TIXYSDescription: MOSFET N-CH 75V 220A TO263
Produkt ist nicht verfügbar
IXTA220N075T7IXYSDescription: MOSFET N-CH 75V 220A TO263-7
Produkt ist nicht verfügbar
IXTA230N04T4IXYSMOSFET Disc MSFT NChTrenchGate-Gen4 TO-263D2
Produkt ist nicht verfügbar
IXTA230N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
IXTA230N04T4IXYSDescription: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA230N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA230N075T2LittelfuseTrans MOSFET N-CH 75V 230A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA230N075T2IXYSDescription: MOSFET N-CH 75V 230A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.93 EUR
10+ 15.29 EUR
100+ 12.66 EUR
Mindestbestellmenge: 2
IXTA230N075T2IXYSIXTA230N075T2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA230N075T2IXYSMOSFET 230 Amps 75V
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA230N075T2-7IXYSMOSFET
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA230N075T2-7IXYSDescription: MOSFET N-CH 75V 230A TO-263
Produkt ist nicht verfügbar
IXTA230N075T2-7IXYSIXTA230N075T2-7 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA240N055TIXYSDescription: MOSFET N-CH 55V 240A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA240N055T7IXYSDescription: MOSFET N-CH 55V 240A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA24N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
IXTA24N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA24N65X2IXYSDescription: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Produkt ist nicht verfügbar
IXTA24N65X2LittelfuseTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA24N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA24N65X2TRLLittelfuseIXTA24N65X2TRL
Produkt ist nicht verfügbar
IXTA24P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
23+ 3.1 EUR
Mindestbestellmenge: 22
IXTA24P085TIXYSDescription: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
auf Bestellung 3324 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.5 EUR
50+ 5.16 EUR
100+ 4.42 EUR
500+ 3.93 EUR
1000+ 3.36 EUR
2000+ 3.17 EUR
Mindestbestellmenge: 4
IXTA24P085TIXYSMOSFET 24 Amps 85V 0.065 Rds
auf Bestellung 288 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA24P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
IXTA260N055T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA260N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
IXTA260N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA260N055T2IXYSDescription: MOSFET N-CH 55V 260A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSDescription: MOSFET N-CH 55V 260A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSMOSFET 260 Amps 55V
Produkt ist nicht verfügbar
IXTA260N055T2-7LittelfuseTrans MOSFET N-CH 55V 260A Automotive 7-Pin(6+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
IXTA26P10TIXYSDescription: MOSFET P-CH 100V 26A TO-263
Produkt ist nicht verfügbar
IXTA26P10TIXYSMOSFET TenchP Power MOSFET
Produkt ist nicht verfügbar
IXTA26P10TLittelfuseTrans MOSFET P-CH 100V 26A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA26P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
IXTA26P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA26P20PLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA26P20PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO263
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.32 EUR
12+ 5.96 EUR
13+ 5.65 EUR
Mindestbestellmenge: 9
IXTA26P20P
Produktcode: 162385		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
IXTA26P20PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO263
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.32 EUR
12+ 5.96 EUR
13+ 5.65 EUR
Mindestbestellmenge: 9
IXTA26P20PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA26P20P - Leistungs-MOSFET, p-Kanal, 200 V, 26 A, 0.17 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 26
hazardous: false
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4
euEccn: NLR
Verlustleistung: 300
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3
Produktpalette: PolarP
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.17
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.17
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA26P20PIXYSDescription: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Produkt ist nicht verfügbar
IXTA26P20PLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA26P20PIXYSMOSFET -26.0 Amps -200V 0.170 Rds
auf Bestellung 1359 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.35 EUR
10+ 14.69 EUR
50+ 13.05 EUR
100+ 11.67 EUR
250+ 11.65 EUR
Mindestbestellmenge: 4
IXTA26P20P TRLIxys CorporationIXTA26P20P TRL
Produkt ist nicht verfügbar
IXTA26P20P-TRLIXYSDescription: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+10.02 EUR
Mindestbestellmenge: 800
IXTA26P20P-TRLIXYSMOSFET IXTA26P20P TRL
auf Bestellung 1703 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.02 EUR
10+ 13.73 EUR
25+ 12.45 EUR
100+ 11.44 EUR
250+ 10.79 EUR
500+ 10.11 EUR
800+ 9.31 EUR
Mindestbestellmenge: 4
IXTA26P20P-TRLLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA26P20P-TRLIXYSDescription: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 2034 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
10+ 13.62 EUR
100+ 11.35 EUR
Mindestbestellmenge: 2
IXTA270N04T4IXYSMOSFET 40V/270A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA270N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA270N04T4IXYSDescription: MOSFET N-CH 40V 270A
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA270N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA270N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA270N04T4-7IXYSMOSFET 40V/270A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA270N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA27N20TIXYSMOSFET 27 Amps 200V 100 Rds
Produkt ist nicht verfügbar
IXTA27N20TIXYSDescription: MOSFET N-CH 20V 27A TO-263
Produkt ist nicht verfügbar
IXTA28P065TIXYSIXTA28P065T SMD P channel transistors
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
35+ 2.04 EUR
37+ 1.94 EUR
Mindestbestellmenge: 27
IXTA28P065TIXYSDescription: MOSFET P-CH 65V 28A TO-263
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA28P065TIXYSMOSFET 28 Amps 65V 0.045 Rds
Produkt ist nicht verfügbar
IXTA2N100IXYSDescription: MOSFET N-CH 1000V 2A TO-263
Produkt ist nicht verfügbar
IXTA2N100IXYSMOSFET 2 Amps 1000V 7 Rds
Produkt ist nicht verfügbar
IXTA2N100PIXYSMOSFET 2 Amps 1000V 7.5 Rds
Produkt ist nicht verfügbar
IXTA2N100PLittelfuseTrans MOSFET N-CH 1KV 2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2N100PIXYSDescription: MOSFET N-CH 1000V 2A TO-263
Produkt ist nicht verfügbar
IXTA2N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
18+ 3.98 EUR
50+ 2.46 EUR
Mindestbestellmenge: 10
IXTA2N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA2N100P-TRLIXYSMOSFET IXTA2N100P TRL
Produkt ist nicht verfügbar
IXTA2N80IXYSDescription: MOSFET N-CH 800V 2A TO263
Packaging: Box
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 500mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
IXTA2N80PLittelfuseTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2N80PIXYSDescription: MOSFET N-CH 800V 2A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
IXTA2R4N120PIXYSMOSFET 2.4 Amps 1200V 7.5 Rds
auf Bestellung 259 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA2R4N120PLittelfuseTrans MOSFET N-CH 1.2KV 2.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2R4N120PIXYSDescription: MOSFET N-CH 1200V 2.4A TO263
auf Bestellung 55 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.61 EUR
10+ 15 EUR
Mindestbestellmenge: 2
IXTA2R4N120P-TRLIXYSDescription: MOSFET N-CH 1200V 2.4A TO263
Produkt ist nicht verfügbar
IXTA300N04T2LittelfuseTrans MOSFET N-CH 40V 300A Automotive 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA300N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA300N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
IXTA300N04T2IXYSDescription: MOSFET N-CH 40V 300A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Produkt ist nicht verfügbar
IXTA300N04T2IXYSMOSFET 300 Amps 40V 0.025 Rds
Produkt ist nicht verfügbar
IXTA300N04T2LittelfuseTrans MOSFET N-CH 40V 300A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA300N04T2-7IXYSDescription: MOSFET N-CH 40V 300A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1100 Stücke:
Lieferzeit 21-28 Tag (e)
300+9.15 EUR
Mindestbestellmenge: 300
IXTA300N04T2-7IXYSMOSFET 300 Amps 40V
auf Bestellung 297 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.35 EUR
10+ 12.06 EUR
50+ 11.36 EUR
100+ 9.78 EUR
Mindestbestellmenge: 4
IXTA30N25L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 522 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.88 EUR
10+ 23.69 EUR
25+ 23.04 EUR
50+ 22.2 EUR
250+ 21.14 EUR
Mindestbestellmenge: 2
IXTA30N65X2IXYSMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXTA32N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA32N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
IXTA32N20TIXYSMOSFET 32 Amps 200V 78 Rds
Produkt ist nicht verfügbar
IXTA32N20TIXYSDescription: MOSFET N-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Produkt ist nicht verfügbar
IXTA32P05TIXYSDescription: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.5 EUR
50+ 5.16 EUR
100+ 4.42 EUR
Mindestbestellmenge: 4
IXTA32P05TIXYSIXTA32P05T SMD P channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
36+ 2 EUR
38+ 1.89 EUR
Mindestbestellmenge: 27
IXTA32P05TLittelfuseTrans MOSFET P-CH 50V 32A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA32P05TIXYSMOSFET 32 Amps 50V 0.036 Rds
auf Bestellung 311 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.55 EUR
10+ 5.77 EUR
50+ 4.89 EUR
100+ 4.45 EUR
250+ 4.19 EUR
500+ 3.8 EUR
Mindestbestellmenge: 8
IXTA32P05T-TRLLittelfuseTrans MOSFET P-CH 50V 32A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA32P05T-TRLIXYSMOSFET IXTA32P05T TRL
Produkt ist nicht verfügbar
IXTA32P05TTRLIXYS/LittelfuseP-канальний ПТ; Udss, В = 50; Id = 32 А; Ptot, Вт = 83; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1975 @ 25; Qg, нКл = 46 @ 10 В; Rds = 39 мОм @ 500 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4,5 В @ 250 мкА; TO-220
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
9+0.83 EUR
10+ 0.72 EUR
100+ 0.63 EUR
Mindestbestellmenge: 9
IXTA32P20TIXYSDescription: MOSFET P-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA32P20TLITTELFUSEDescription: LITTELFUSE - IXTA32P20T - Leistungs-MOSFET, p-Kanal, 200 V, 32 A, 0.13 ohm, TO-263AA, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 32
Qualifikation: -
MSL: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 300
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.13
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.13
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA32P20TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
IXTA32P20TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA32P20TLittelfuseTrans MOSFET P-CH 200V 32A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA32P20TIXYSMOSFET TenchP Power MOSFET
auf Bestellung 1439 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.4 EUR
10+ 18.33 EUR
50+ 14.79 EUR
100+ 13.91 EUR
250+ 13.81 EUR
Mindestbestellmenge: 3
IXTA32P20T-TRLLittelfuseTrans MOSFET P-CH 200V 32A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA32P20T-TRLIXYSMOSFET IXTA32P20T TRL
Produkt ist nicht verfügbar
IXTA32P20T-TRLIXYSDescription: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA340N04T4IXYSMOSFET 40V/340A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA340N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
IXTA340N04T4IXYSDescription: MOSFET N-CH 40V 340A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
auf Bestellung 188 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.78 EUR
10+ 11.57 EUR
100+ 9.36 EUR
Mindestbestellmenge: 2
IXTA340N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSMOSFET 40V/340A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSDescription: MOSFET N-CH 40V 340A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA340N04T4-7TRLLittelfuseIXTA340N04T4-7TRL
Produkt ist nicht verfügbar
IXTA340N04T4-TRLIXYSDescription: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IXTA34N65X2IXYSDescription: MOSFET N-CH 650V 34A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA34N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
IXTA34N65X2LittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA34N65X2-TRLIXYSDescription: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA34N65X2-TRLIXYSMOSFET IXTA34N65X2 TRL
Produkt ist nicht verfügbar
IXTA34N65X2TRLLittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N20TIXYSDescription: MOSFET N-CH 200V 36A TO-263
Produkt ist nicht verfügbar
IXTA36N20TIXYSMOSFET 36 Amps 200V 60 Rds
Produkt ist nicht verfügbar
IXTA36N30PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.8 EUR
17+ 4.25 EUR
20+ 3.63 EUR
21+ 3.45 EUR
Mindestbestellmenge: 15
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.65 EUR
2250+ 4.11 EUR
4500+ 3.71 EUR
6750+ 3.38 EUR
Mindestbestellmenge: 50
IXTA36N30PIXYSMOSFET MOSFET N-CH 300V 36A
auf Bestellung 3838 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.93 EUR
10+ 10.04 EUR
50+ 8.71 EUR
100+ 7.62 EUR
250+ 7.44 EUR
500+ 7.02 EUR
1000+ 6.21 EUR
Mindestbestellmenge: 5
IXTA36N30PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.8 EUR
17+ 4.25 EUR
20+ 3.63 EUR
21+ 3.45 EUR
Mindestbestellmenge: 15
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
300+4.84 EUR
500+ 4.4 EUR
1000+ 3.51 EUR
2000+ 3.33 EUR
Mindestbestellmenge: 300
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36N30PIXYSDescription: MOSFET N-CH 300V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 2060 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.86 EUR
50+ 9.4 EUR
100+ 8.06 EUR
500+ 7.16 EUR
1000+ 6.13 EUR
2000+ 5.78 EUR
Mindestbestellmenge: 3
IXTA36N30P
Produktcode: 52904		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXTA36N30P-PDPIXYSDescription: MOSFET N-CH TO263
Packaging: Bulk
Produkt ist nicht verfügbar
IXTA36N30P-TRLIXYSDescription: MOSFET N-CH 300V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+7.09 EUR
Mindestbestellmenge: 800
IXTA36N30P-TRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30P-TRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30P-TRLIXYSMOSFET IXTA36N30P TRL
Produkt ist nicht verfügbar
IXTA36N30PTRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30TIXYSMOSFET 36 Amps 300V 110 Rds
Produkt ist nicht verfügbar
IXTA36N30TIXYSDescription: MOSFET N-CH 300V 36A TO263
Produkt ist nicht verfügbar
IXTA36P15PIXYSDescription: MOSFET P-CH 150V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 2235 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
50+ 12.69 EUR
100+ 11.35 EUR
500+ 10.02 EUR
1000+ 9.02 EUR
2000+ 8.45 EUR
Mindestbestellmenge: 2
IXTA36P15PLittelfuseTrans MOSFET P-CH 150V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36P15PIXYSIXTA36P15P SMD P channel transistors
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.19 EUR
13+ 5.63 EUR
14+ 5.33 EUR
50+ 5.32 EUR
Mindestbestellmenge: 10
IXTA36P15PIXYSMOSFET -36.0 Amps -150V 0.110 Rds
auf Bestellung 296 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA36P15P TRLIXYSMOSFET -36.0 Amps -150V 0.110 Rds
auf Bestellung 745 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.75 EUR
10+ 16.93 EUR
25+ 16.15 EUR
100+ 14.01 EUR
500+ 12.22 EUR
800+ 10.37 EUR
2400+ 10.01 EUR
Mindestbestellmenge: 3
IXTA36P15P-TRLLittelfuseTrans MOSFET P-CH 150V 36A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA36P15P-TRLIXYSDescription: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 1852 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
10+ 13.62 EUR
100+ 11.35 EUR
Mindestbestellmenge: 2
IXTA36P15P-TRLLITTELFUSEDescription: LITTELFUSE - IXTA36P15P-TRL - MOSFET, P-CH, 150V, 36A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36P15P-TRLIXYSDescription: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+10.02 EUR
Mindestbestellmenge: 800
IXTA380N036T4-7IXYSDescription: MOSFET N-CH 36V 380A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSMOSFET Disc MSFT NChTrenchGate-Gen4 TO-263D2
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
Produkt ist nicht verfügbar
IXTA380N036T4-7-TRIXYSDescription: MOSFET N-CH 36V 380A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA380N036T4-7-TRIXYSMOSFET IXTA380N036T4-7 TRL
Produkt ist nicht verfügbar
IXTA38N15TIXYSDescription: MOSFET N-CH 150V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
IXTA3N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 3A
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.81 EUR
10+ 12.38 EUR
50+ 7.7 EUR
Mindestbestellmenge: 4
IXTA3N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100D2IXYSDescription: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2 TRLIxys CorporationTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2-TRLIXYSMOSFET IXTA3N100D2 TRL
Produkt ist nicht verfügbar
IXTA3N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N100D2HVLITTELFUSEDescription: LITTELFUSE - IXTA3N100D2HV - Leistungs-MOSFET, n-Kanal, 1 kV, 3 A, 6 ohm, TO-263HV, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1
rohsCompliant: YES
Dauer-Drainstrom Id: 3
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 125
Gate-Source-Schwellenspannung, max.: 4.5
euEccn: NLR
Verlustleistung: 125
Bauform - Transistor: TO-263HV
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 6
Rds(on)-Prüfspannung: 0
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 6
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 200 Stücke:
Lieferzeit 385-399 Tag (e)
4+15.37 EUR
10+ 12.92 EUR
50+ 12.19 EUR
100+ 10.69 EUR
Mindestbestellmenge: 4
IXTA3N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2HVIXYSDescription: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLIXYSMOSFET IXTA3N100D2HV TRL
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLIXYSDescription: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100PLittelfuseTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N100PIXYSDescription: MOSFET N-CH 1000V 3A TO-263
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA3N100PIxys CorporationTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Produkt ist nicht verfügbar
IXTA3N100PIXYSMOSFET 3 Amps 1000V 4.8 Rds
Produkt ist nicht verfügbar
IXTA3N100PLittelfuseTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.75 EUR
23+ 6.67 EUR
25+ 6.36 EUR
50+ 5.72 EUR
100+ 4.73 EUR
Mindestbestellmenge: 21
IXTA3N100PIxys CorporationTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100P-TRLIXYSMOSFET IXTA3N100P TRL
Produkt ist nicht verfügbar
IXTA3N100P-TRLIXYSDescription: IXTA3N100P TRL
Produkt ist nicht verfügbar
IXTA3N110IXYSDescription: MOSFET N-CH 1100V 3A TO-263
Produkt ist nicht verfügbar
IXTA3N110IXYSMOSFET 3 Amps 1100V 4 Rds
Produkt ist nicht verfügbar
IXTA3N110-TRLIXYSDescription: IXTA3N110 TRL
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120IXYSMOSFET 3 Amps 1200V 4.5 Rds
auf Bestellung 4656 Stücke:
Lieferzeit 563-577 Tag (e)
3+19.66 EUR
10+ 16.85 EUR
50+ 15.29 EUR
Mindestbestellmenge: 3
IXTA3N120
Produktcode: 190833		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA3N120IXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXTA3N120IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA3N120 - Leistungs-MOSFET, n-Kanal, 1.2 kV, 3 A, 4.5 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 200W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.5ohm
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
IXTA3N120-TRLIXYSMOSFET IXTA3N120 TRL
auf Bestellung 1580 Stücke:
Lieferzeit 299-313 Tag (e)
3+20.05 EUR
10+ 17.08 EUR
25+ 16.85 EUR
100+ 14.2 EUR
250+ 14.04 EUR
500+ 12.4 EUR
Mindestbestellmenge: 3
IXTA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N120-TRLLITTELFUSEDescription: LITTELFUSE - IXTA3N120-TRL - MOSFET, N-CH, 1.2KV, 3A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 200W
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 4.5ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.5ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseHigh Voltage Power MOSFET
Produkt ist nicht verfügbar
IXTA3N120-TRRIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120-TRRIXYSMOSFET IXTA3N120 TRR
Produkt ist nicht verfügbar
IXTA3N120HVLITTELFUSEDescription: LITTELFUSE - IXTA3N120HV - Leistungs-MOSFET, n-Kanal, 1.2 kV, 3 A, 4.5 ohm, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 3
hazardous: false
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 200
Gate-Source-Schwellenspannung, max.: 5
euEccn: NLR
Verlustleistung: 200
Bauform - Transistor: TO-263
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 4.5
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 4.5
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120HVIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
Produkt ist nicht verfügbar
IXTA3N120HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N120HVLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N120HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
IXTA3N120HVIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 239 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.69 EUR
50+ 14.94 EUR
100+ 13.37 EUR
Mindestbestellmenge: 2
IXTA3N120HVLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N120HV-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HV-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120HV-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HV-TRLIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
auf Bestellung 800 Stücke:
Lieferzeit 622-636 Tag (e)
3+19.03 EUR
10+ 16.3 EUR
25+ 14.79 EUR
100+ 13.6 EUR
250+ 12.79 EUR
500+ 11.99 EUR
800+ 11.05 EUR
Mindestbestellmenge: 3
IXTA3N120HVTRLIxys CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HVIXYSDescription: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.99 EUR
8+ 9.45 EUR
Mindestbestellmenge: 6
IXTA3N150HVIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
auf Bestellung 336 Stücke:
Lieferzeit 466-480 Tag (e)
2+26 EUR
10+ 25.97 EUR
Mindestbestellmenge: 2
IXTA3N150HVLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.99 EUR
8+ 9.45 EUR
Mindestbestellmenge: 6
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLIXYSDescription: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLIXYSMOSFET IXTA3N150HV TRL
Produkt ist nicht verfügbar
IXTA3N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N50D2IXYSDescription: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.83 EUR
10+ 9.93 EUR
100+ 8.04 EUR
Mindestbestellmenge: 3
IXTA3N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 3A
auf Bestellung 495 Stücke:
Lieferzeit 385-399 Tag (e)
5+12.01 EUR
10+ 10.09 EUR
50+ 9.52 EUR
100+ 8.14 EUR
250+ 7.72 EUR
500+ 7.25 EUR
Mindestbestellmenge: 5
IXTA3N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
IXTA3N50D2-TRLIXYSMOSFET IXTA3N50D2 TRL
Produkt ist nicht verfügbar
IXTA3N50D2-TRLIXYSDescription: MOSFET N-CH 500V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N50P
Produktcode: 131345		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA3N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA3N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA3N50PIXYSDescription: MOSFET N-CH 500V 3.6A D2PAK
Produkt ist nicht verfügbar
IXTA3N50PIXYSMOSFET 3.6 Amps 500 V 2 Ohm Rds
auf Bestellung 107 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA3N60PIXYSDescription: MOSFET N-CH 600V 3A TO263
Produkt ist nicht verfügbar
IXTA3N60PIXYSMOSFET 3 Amps 600V 2.9 Ohms Rds
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA42N15TIXYSMOSFET MSFT N-CH TRENCH GATE -GEN1
auf Bestellung 184 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.72 EUR
10+ 6.79 EUR
50+ 5.75 EUR
100+ 5.23 EUR
250+ 4.94 EUR
500+ 4.65 EUR
1000+ 4.24 EUR
Mindestbestellmenge: 7
IXTA42N25PIXYSMOSFET 42 Amps 250V 0.084 Rds
Produkt ist nicht verfügbar
IXTA42N25PIXYSDescription: MOSFET N-CH 250V 42A TO-263
Produkt ist nicht verfügbar
IXTA42N25PIXYSIXTA42N25P SMD N channel transistors
Produkt ist nicht verfügbar
IXTA42N28PIXYS09+
auf Bestellung 322 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA44N15TIXYSDescription: MOSFET N-CH 150V 44A TO-263
Produkt ist nicht verfügbar
IXTA44N25TIXYSMOSFET 44 Amps 250V 72 Rds
Produkt ist nicht verfügbar
IXTA44N25TIXYSDescription: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
IXTA44N30TIXYSDescription: MOSFET N-CH 300V 44A TO263
Produkt ist nicht verfügbar
IXTA44N30TIXYSMOSFET 44 Amps 300V 85 Rds
Produkt ist nicht verfügbar
IXTA44P15TIXYSDescription: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 2769 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
50+ 12.01 EUR
100+ 10.74 EUR
500+ 9.48 EUR
1000+ 8.53 EUR
2000+ 7.99 EUR
Mindestbestellmenge: 2
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15TIXYSMOSFET -44 Amps -150V 0.065 Rds
Produkt ist nicht verfügbar
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15TIXYSIXTA44P15T SMD P channel transistors
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.81 EUR
14+ 5.19 EUR
15+ 4.9 EUR
Mindestbestellmenge: 11
IXTA44P15T-TRLIXYSDescription: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 22400 Stücke:
Lieferzeit 21-28 Tag (e)
800+9.48 EUR
1600+ 8.53 EUR
2400+ 7.99 EUR
Mindestbestellmenge: 800
IXTA44P15T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL - Leistungs-MOSFET, p-Kanal, 150 V, 44 A, 0.065 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15T-TRLLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15T-TRLIXYSDescription: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 23118 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
10+ 12.89 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
IXTA44P15T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL - Leistungs-MOSFET, p-Kanal, 150 V, 44 A, 0.065 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15T-TRLLittelfuseP-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
IXTA44P15T-TRLIXYSMOSFET MOSFET 150 V
auf Bestellung 3100 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.13 EUR
10+ 13.6 EUR
25+ 12.77 EUR
100+ 11.26 EUR
250+ 11.02 EUR
500+ 9.7 EUR
800+ 8.81 EUR
Mindestbestellmenge: 4
IXTA44P15T-TRL.LITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL. - MOSFET, P-CH, 150V, 44A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 298W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: No
Wandlerpolarität: P Channel
Kanaltyp: P Channel
Betriebswiderstand, Rds(on): 0.065ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15TTRLIXYSDescription: MOSFET P-CH 150V 44A TO-263
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA460P2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Drain-source voltage: 500V
Drain current: 24A
Case: TO263
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.27Ω
Power dissipation: 480W
Kind of channel: enhanced
Gate charge: 48nC
Reverse recovery time: 400ns
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA460P2IXYSMOSFET PolarP2 Power MOSFET
auf Bestellung 36 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.31 EUR
10+ 11.18 EUR
50+ 10.82 EUR
100+ 8.92 EUR
250+ 8.71 EUR
500+ 7.96 EUR
1000+ 6.86 EUR
Mindestbestellmenge: 4
IXTA460P2IXYSDescription: MOSFET N-CH 500V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
auf Bestellung 986 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.87 EUR
10+ 13.35 EUR
100+ 10.94 EUR
500+ 9.31 EUR
Mindestbestellmenge: 2
IXTA460P2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Drain-source voltage: 500V
Drain current: 24A
Case: TO263
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.27Ω
Power dissipation: 480W
Kind of channel: enhanced
Gate charge: 48nC
Reverse recovery time: 400ns
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXTA48N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Case: TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA48N20TIXYSMOSFET 48 Amps 200V 50 Rds
Produkt ist nicht verfügbar
IXTA48N20TIXYSDescription: MOSFET N-CH 200V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.3 EUR
10+ 8.66 EUR
100+ 7.01 EUR
Mindestbestellmenge: 3
IXTA48N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Case: TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
IXTA48P05TLittelfuseTrans MOSFET P-CH 50V 48A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA48P05TIXYSIXTA48P05T SMD P channel transistors
Produkt ist nicht verfügbar
IXTA48P05TIXYSMOSFET TenchP Power MOSFET
auf Bestellung 360 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.58 EUR
10+ 8.92 EUR
50+ 8.4 EUR
100+ 7.07 EUR
250+ 6.84 EUR
Mindestbestellmenge: 5
IXTA48P05TIXYSDescription: MOSFET P-CH 50V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
auf Bestellung 3439 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.5 EUR
50+ 8.34 EUR
100+ 7.15 EUR
500+ 6.35 EUR
1000+ 5.44 EUR
2000+ 5.12 EUR
Mindestbestellmenge: 3
IXTA48P05T-TRLIXYSDescription: MOSFET P-CH 50V 48A TO263
Produkt ist nicht verfügbar
IXTA4N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA4N150HVIXYSDescription: MOSFET N-CH 1500V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA4N150HVIXYSMOSFET DiscMosfet N-CH Std-HiVoltage TO-263D2
auf Bestellung 113 Stücke:
Lieferzeit 14-28 Tag (e)
1+67.29 EUR
50+ 55.8 EUR
100+ 52.31 EUR
250+ 50.39 EUR
500+ 44.02 EUR
IXTA4N150HVLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA4N150HVLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA4N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N150HV-TRLIXYSDescription: MOSFET N-CH 1500V 4A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N150HV-TRLIXYSMOSFET IXTA4N150HV TRL
Produkt ist nicht verfügbar
IXTA4N150HVTRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N60PIXYSDescription: MOSFET N-CH 600V 4A TO263
Produkt ist nicht verfügbar
IXTA4N60PIXYSMOSFET 4.0 Amps 600 V 1.9 Ohm Rds
Produkt ist nicht verfügbar
IXTA4N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA4N65X2LittelfuseTrans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA4N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
IXTA4N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
24+ 2.97 EUR
50+ 1.82 EUR
Mindestbestellmenge: 12
IXTA4N65X2IXYSDescription: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
auf Bestellung 35 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.05 EUR
Mindestbestellmenge: 4
IXTA4N65X2TRLLittelfuseIXTA4N65X2TRL
Produkt ist nicht verfügbar
IXTA4N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+ 3.09 EUR
29+ 2.47 EUR
31+ 2.33 EUR
Mindestbestellmenge: 21
IXTA4N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.42 EUR
24+ 3.09 EUR
29+ 2.47 EUR
31+ 2.33 EUR
Mindestbestellmenge: 21
IXTA4N70X2IXYSDescription: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N70X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA4N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA4N80PIXYSDescription: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N80PIXYSMOSFET 3.5 Amps 800V 3 Rds
Produkt ist nicht verfügbar
IXTA4N80PLittelfuseTrans MOSFET N-CH 800V 3.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA4N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Produkt ist nicht verfügbar
IXTA4N80P-TRLIXYSDescription: MOSFET N-CH 800V 3.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N80P-TRLIXYSMOSFET IXTA4N80P TRL
Produkt ist nicht verfügbar
IXTA50N20PLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA50N20PIXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.86 EUR
10+ 9.96 EUR
100+ 8.06 EUR
500+ 7.16 EUR
1000+ 6.13 EUR
Mindestbestellmenge: 3
IXTA50N20PIXYSMOSFET 50 Amps 200V 0.06 Rds
auf Bestellung 158 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.93 EUR
10+ 10.04 EUR
50+ 9.7 EUR
100+ 8.11 EUR
250+ 7.85 EUR
500+ 7.77 EUR
Mindestbestellmenge: 5
IXTA50N20PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
IXTA50N20PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA50N20P-TRLIXYSMOSFET IXTA50N20P TRL
Produkt ist nicht verfügbar
IXTA50N20P-TRLLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA50N20P-TRLLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA50N20P-TRLIXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Produkt ist nicht verfügbar
IXTA50N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
IXTA50N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA50N25TIXYSDescription: MOSFET N-CH 250V 50A TO263
Produkt ist nicht verfügbar
IXTA50N25TIXYSMOSFET 50 Amps 250V 50 Rds
auf Bestellung 258 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.21 EUR
10+ 11.1 EUR
50+ 10.45 EUR
100+ 9.13 EUR
Mindestbestellmenge: 4
IXTA50N25TLittelfuseTrans MOSFET N-CH 250V 50A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA50N25T-TRLIXYSDescription: MOSFET N-CH 250V 50A TO263
Produkt ist nicht verfügbar
IXTA50N25T-TRLIXYSMOSFET IXTA50N25T TRL
Produkt ist nicht verfügbar
IXTA52P10PLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA52P10PLITTELFUSEDescription: LITTELFUSE - IXTA52P10P - MOSFET, P-CH, 100V, 52A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.05ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA52P10PLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA52P10PIXYSDescription: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1821 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
50+ 12.69 EUR
100+ 11.35 EUR
500+ 10.02 EUR
1000+ 9.02 EUR
Mindestbestellmenge: 2
IXTA52P10PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
13+ 5.53 EUR
14+ 5.23 EUR
Mindestbestellmenge: 9
IXTA52P10PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 308 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
13+ 5.53 EUR
14+ 5.23 EUR
Mindestbestellmenge: 9
IXTA52P10PIXYSMOSFET -52.0 Amps -100V 0.050 Rds
auf Bestellung 245 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.02 EUR
10+ 14.33 EUR
50+ 13.75 EUR
100+ 11.86 EUR
250+ 11.28 EUR
500+ 10.43 EUR
1000+ 10.24 EUR
Mindestbestellmenge: 4
IXTA52P10P-TRLIXYSDescription: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 2171 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.89 EUR
10+ 13.62 EUR
100+ 11.35 EUR
Mindestbestellmenge: 2
IXTA52P10P-TRLIXYSMOSFET IXTA52P10P TRL
auf Bestellung 800 Stücke:
Lieferzeit 315-329 Tag (e)
4+16.02 EUR
10+ 13.7 EUR
25+ 12.43 EUR
100+ 11.41 EUR
250+ 10.76 EUR
500+ 10.09 EUR
800+ 9.31 EUR
Mindestbestellmenge: 4
IXTA52P10P-TRLLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA52P10P-TRLIXYSDescription: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
800+10.02 EUR
1600+ 9.02 EUR
Mindestbestellmenge: 800
IXTA54N30TIXYSMOSFET 54 Amps 300V 72 Rds
Produkt ist nicht verfügbar
IXTA54N30TIXYSDescription: MOSFET N-CH 300V 54A TO-263
Produkt ist nicht verfügbar
IXTA56N15TIXYSDescription: MOSFET N-CH 150V 56A TO263
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
300+6.9 EUR
Mindestbestellmenge: 300
IXTA56N15TLittelfuseTrans MOSFET N-CH 150V 56A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA5N50PIXYSDescription: MOSFET N-CH 500V 4.8A TO263
Produkt ist nicht verfügbar
IXTA5N50PIXYSMOSFET 4.8 Amps 500V 1.4 Ohms Rds
Produkt ist nicht verfügbar
IXTA5N60PIXYSDescription: MOSFET N-CH 600V 5A TO263
Produkt ist nicht verfügbar
IXTA5N60PIXYSMOSFET 5.0 Amps 600 V 1.6 Ohm Rds
Produkt ist nicht verfügbar
IXTA5N60PLittelfuseTrans MOSFET N-CH 600V 5A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Produkt ist nicht verfügbar
IXTA60N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA60N10TLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N10T
Produktcode: 148376		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA60N10TIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.6 EUR
Mindestbestellmenge: 4
IXTA60N10TIXYSMOSFET 60 Amps 100V 18.0 Rds
auf Bestellung 60 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.66 EUR
10+ 5.54 EUR
100+ 4.32 EUR
250+ 3.85 EUR
500+ 3.54 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 8
IXTA60N10T-TRLIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 6399 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.6 EUR
10+ 5.48 EUR
100+ 4.36 EUR
Mindestbestellmenge: 4
IXTA60N10T-TRLLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA60N10T-TRLIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 21-28 Tag (e)
800+3.69 EUR
1600+ 3.13 EUR
2400+ 2.98 EUR
5600+ 2.87 EUR
Mindestbestellmenge: 800
IXTA60N10T-TRLIXYSMOSFET IXTA60N10T TRL
auf Bestellung 780 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.66 EUR
10+ 5.54 EUR
100+ 4.39 EUR
250+ 4.24 EUR
500+ 3.69 EUR
800+ 3.2 EUR
Mindestbestellmenge: 8
IXTA60N10TTRLLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA60N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
IXTA60N20TIXYSMOSFET 60 Amps 200V
Produkt ist nicht verfügbar
IXTA60N20T
Produktcode: 108659		IXYSTransistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA60N20TLittelfuseTrans MOSFET N-CH 200V 60A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N20TIXYSDescription: MOSFET N-CH 200V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
IXTA60N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
IXTA60N20T-TRLIXYSDescription: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
IXTA60N20T-TRLIXYSMOSFET IXTA60N20T TRL
Produkt ist nicht verfügbar
IXTA60N20X4IXYSMOSFET 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET
auf Bestellung 947 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.81 EUR
10+ 23.63 EUR
50+ 20.07 EUR
100+ 19.14 EUR
250+ 18.02 EUR
500+ 16.87 EUR
1000+ 15.18 EUR
Mindestbestellmenge: 2
IXTA60N20X4IXYSDescription: MOSFET ULTRA X4 200V 60A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1667 Stücke:
Lieferzeit 21-28 Tag (e)
1+26.62 EUR
50+ 21.25 EUR
100+ 19.01 EUR
500+ 16.78 EUR
1000+ 15.1 EUR
IXTA62N15PLITTELFUSEDescription: LITTELFUSE - IXTA62N15P - MOSFET, N-CH, 150V, 62A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 62
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 350
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: PolarHT Series
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.033
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5.5
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA62N15PIXYSDescription: MOSFET N-CH 150V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 725 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.19 EUR
10+ 10.94 EUR
100+ 8.97 EUR
500+ 7.63 EUR
Mindestbestellmenge: 3
IXTA62N15PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
IXTA62N15PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA62N15PIXYSMOSFET 62 Amps 150V 0.04 Rds
auf Bestellung 68 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.93 EUR
10+ 10.35 EUR
50+ 9.85 EUR
100+ 8.71 EUR
500+ 8.48 EUR
Mindestbestellmenge: 5
IXTA62N15P-TRLLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA62N15P-TRLIXYSMOSFET IXTA62N15P TRL
Produkt ist nicht verfügbar
IXTA62N15P-TRLIXYSDescription: MOSFET N-CH 150V 62A TO263
Produkt ist nicht verfügbar
IXTA62N25TIXYSMOSFET 62 Amps 250V 50 Rds
Produkt ist nicht verfügbar
IXTA62N25TIXYSDescription: MOSFET N-CH 250V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
IXTA64N10L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
IXTA64N10L2LittelfuseTrans MOSFET N-CH 100V 64A 3-Pin(2+Tab) TO-263
Produkt ist nicht verfügbar
IXTA64N10L2IXYSDescription: MOSFET N-CH 100V 64A TO263AA
Produkt ist nicht verfügbar
IXTA64N10L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA64N10L2LITTELFUSEDescription: LITTELFUSE - IXTA64N10L2 - MOSFET, N-CH, 100V, 64A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 64
Qualifikation: -
Verlustleistung Pd: 357
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 357
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: LinearL2 Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.032
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.032
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA64N10L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 963 Stücke:
Lieferzeit 14-28 Tag (e)
2+31.88 EUR
10+ 28.73 EUR
25+ 27.51 EUR
50+ 26.52 EUR
100+ 24.83 EUR
250+ 24.36 EUR
500+ 22.83 EUR
Mindestbestellmenge: 2
IXTA64N10L2-TRLIXYSMOSFET IXTA64N10L2 TRL
Produkt ist nicht verfügbar
IXTA64N10L2-TRLIXYSDescription: MOSFET N-CH 100V 64A TO263
Produkt ist nicht verfügbar
IXTA6N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N100D2IXYSDescription: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.18 EUR
10+ 19.02 EUR
100+ 15.85 EUR
Mindestbestellmenge: 2
IXTA6N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
IXTA6N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA6N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 6A
auf Bestellung 1050 Stücke:
Lieferzeit 455-469 Tag (e)
3+19.99 EUR
10+ 18.1 EUR
50+ 17.24 EUR
100+ 14.95 EUR
Mindestbestellmenge: 3
IXTA6N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N100D2-TRLIXYSMOSFET IXTA6N100D2 TRL
Produkt ist nicht verfügbar
IXTA6N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar
IXTA6N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 295 Stücke:
Lieferzeit 566-580 Tag (e)
2+36.27 EUR
10+ 27.95 EUR
500+ 27.4 EUR
1000+ 26.78 EUR
Mindestbestellmenge: 2
IXTA6N100D2HVIXYSDescription: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Produkt ist nicht verfügbar
IXTA6N100D2HVLittelfuseHigh Voltage MOSFET
Produkt ist nicht verfügbar
IXTA6N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2IXYSDescription: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1140 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.46 EUR
50+ 17.95 EUR
100+ 16.06 EUR
500+ 14.17 EUR
1000+ 12.75 EUR
Mindestbestellmenge: 2
IXTA6N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.75 EUR
9+ 8.39 EUR
10+ 7.94 EUR
Mindestbestellmenge: 7
IXTA6N50D2LITTELFUSEDescription: LITTELFUSE - IXTA6N50D2 - MOSFET, N-CH, 500V, 6A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.55ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 1217 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA6N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.75 EUR
9+ 8.39 EUR
10+ 7.94 EUR
Mindestbestellmenge: 7
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 6A
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.09 EUR
10+ 22.62 EUR
50+ 18.1 EUR
Mindestbestellmenge: 3
IXTA6N50D2 TRLIxys CorporationTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+4.6 EUR
Mindestbestellmenge: 800
IXTA6N50D2(IXYS Corporation MOSFET N-CH 500V 6A D2PAK )
Produktcode: 84036		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA6N50D2-TRLIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 800 Stücke:
Lieferzeit 453-467 Tag (e)
3+22.62 EUR
10+ 19.42 EUR
25+ 18.41 EUR
100+ 16.17 EUR
250+ 15.65 EUR
500+ 14.3 EUR
800+ 13.68 EUR
Mindestbestellmenge: 3
IXTA6N50D2-TRLLittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N50D2-TRLIXYSDescription: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+14.17 EUR
Mindestbestellmenge: 800
IXTA6N50D2-TRLIXYSDescription: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1144 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.46 EUR
10+ 19.27 EUR
100+ 16.06 EUR
Mindestbestellmenge: 2
IXTA6N50PIXYSMOSFET 6 Amps 500V 1.1 Ohms Rds
auf Bestellung 276 Stücke:
Lieferzeit 14-28 Tag (e)
IXTA6N50PIXYSDescription: MOSFET N-CH 500V 6A D2-PAK
Produkt ist nicht verfügbar
IXTA70N075T2IXYSMOSFET 70 Amps 75V 0.0120 Rds
Produkt ist nicht verfügbar
IXTA70N075T2IXYSDescription: MOSFET N-CH 75V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
IXTA70N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA70N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA70N075T2-TRLIXYSMOSFET IXTA70N075T2 TRL
Produkt ist nicht verfügbar
IXTA70N075T2-TRLIXYSDescription: MOSFET N-CH 75V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
IXTA70N075T2TRLLittelfuseTrans MOSFET N-CH 75V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA70N085TIXYSDescription: MOSFET N-CH 85V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Produkt ist nicht verfügbar
IXTA72N20TIXYSDescription: MOSFET N-CH 200V 72A TO-263
Produkt ist nicht verfügbar
IXTA72N20TIXYSMOSFET 72 Amps 200V 33 Rds
Produkt ist nicht verfügbar
IXTA74N15TIXYSDescription: MOSFET N-CH 150V 74A TO-263
Produkt ist nicht verfügbar
IXTA75N10PIXYSMOSFET 75 Amps 100V 0.025 Rds
auf Bestellung 7 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.13 EUR
10+ 11.8 EUR
50+ 11.15 EUR
100+ 9.65 EUR
500+ 8.24 EUR
Mindestbestellmenge: 4
IXTA75N10PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
IXTA75N10PIXYSDescription: MOSFET N-CH 100V 75A TO263
auf Bestellung 205 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA75N10PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA75N10PLittelfuseTrans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA75N10P-TRLIXYSDescription: MOSFET N-CH 100V 75A TO263
Produkt ist nicht verfügbar
IXTA75N10P-TRLIXYSMOSFET IXTA75N10P TRL
Produkt ist nicht verfügbar
IXTA76N075TIXYSDescription: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
Produkt ist nicht verfügbar
IXTA76N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Produkt ist nicht verfügbar
IXTA76N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA76N25TLittelfuseTrans MOSFET N-CH 250V 76A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA76N25TIXYSDescription: MOSFET N-CH 250V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 3033 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.92 EUR
10+ 12.53 EUR
100+ 10.14 EUR
500+ 9.01 EUR
1000+ 7.72 EUR
2000+ 7.27 EUR
Mindestbestellmenge: 2
IXTA76N25TIXYSMOSFET 76 Amps 250V 39 Rds
Produkt ist nicht verfügbar
IXTA76N25T-TRLIXYSMOSFET IXTA76N25T TRL
Produkt ist nicht verfügbar
IXTA76N25T-TRLIXYSDescription: MOSFET N-CH 250V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+9.01 EUR
Mindestbestellmenge: 800
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.2 EUR
25+ 7.81 EUR
50+ 6.92 EUR
100+ 5.31 EUR
1000+ 4.38 EUR
Mindestbestellmenge: 17
IXTA76P10T
Produktcode: 198462		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
IXTA76P10TIXYSDescription: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 3480 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
50+ 12.01 EUR
100+ 10.74 EUR
500+ 9.48 EUR
1000+ 8.53 EUR
2000+ 7.99 EUR
Mindestbestellmenge: 2
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.2 EUR
25+ 7.81 EUR
50+ 6.92 EUR
100+ 5.31 EUR
1000+ 4.38 EUR
Mindestbestellmenge: 17
IXTA76P10TIXYSMOSFET -76 Amps -100V 0.024 Rds
auf Bestellung 2264 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.13 EUR
10+ 14.09 EUR
50+ 11.78 EUR
100+ 10.82 EUR
250+ 10.35 EUR
500+ 10.14 EUR
Mindestbestellmenge: 4
IXTA76P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA76P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
18+8.7 EUR
Mindestbestellmenge: 18
IXTA76P10TIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA76P10T - Leistungs-MOSFET, p-Kanal, 100 V, 76 A, 0.025 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.025ohm
auf Bestellung 1523 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA76P10T-TRLIXYSDescription: MOSFET P-CH 100V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
800+9.48 EUR
1600+ 8.53 EUR
2400+ 7.99 EUR
Mindestbestellmenge: 800
IXTA76P10T-TRLIXYSMOSFET -76 Amps -100V 0.024 Rds
Produkt ist nicht verfügbar
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.19 EUR
4000+ 4.95 EUR
Mindestbestellmenge: 800
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
20+8.01 EUR
22+ 6.91 EUR
25+ 6.26 EUR
100+ 5.54 EUR
250+ 5.17 EUR
500+ 4.49 EUR
Mindestbestellmenge: 20
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA76P10T-TRLIXYSDescription: MOSFET P-CH 100V 76A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 2925 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
10+ 12.89 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
20+8.01 EUR
22+ 6.91 EUR
25+ 6.26 EUR
100+ 5.54 EUR
250+ 5.17 EUR
500+ 4.49 EUR
Mindestbestellmenge: 20
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.19 EUR
4000+ 4.95 EUR
Mindestbestellmenge: 800
IXTA7N60PIXYSDescription: MOSFET N-CH 600V 7A D2-PAK
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N075L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Mounting: SMD
On-state resistance: 24mΩ
Reverse recovery time: 160ns
Power dissipation: 357W
Gate charge: 103nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.45 EUR
6+ 12.11 EUR
Mindestbestellmenge: 4
IXTA80N075L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Mounting: SMD
On-state resistance: 24mΩ
Reverse recovery time: 160ns
Power dissipation: 357W
Gate charge: 103nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.45 EUR
6+ 12.11 EUR
Mindestbestellmenge: 4
IXTA80N075L2LITTELFUSEDescription: LITTELFUSE - IXTA80N075L2 - MOSFET, N-CH, 75V, 80A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 357W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: LinearL2 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
IXTA80N075L2IXYSMOSFET MOSFET N CHANNEL
auf Bestellung 3777 Stücke:
Lieferzeit 14-28 Tag (e)
2+32.34 EUR
10+ 28.52 EUR
25+ 28.21 EUR
50+ 27.14 EUR
100+ 24.67 EUR
500+ 24.6 EUR
Mindestbestellmenge: 2
IXTA80N075L2IXYSDescription: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 839 Stücke:
Lieferzeit 21-28 Tag (e)
1+31.82 EUR
50+ 25.76 EUR
100+ 24.24 EUR
500+ 21.97 EUR
IXTA80N075L2-TRLIXYSMOSFET IXTA80N075L2 TRL
Produkt ist nicht verfügbar
IXTA80N075L2-TRLIXYSDescription: MOSFET N-CH 75V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA80N075L2-TRLLittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA80N10TIXYSDescription: MOSFET N-CH 100V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 4030 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.92 EUR
50+ 7.05 EUR
100+ 6.04 EUR
500+ 5.37 EUR
1000+ 4.6 EUR
2000+ 4.33 EUR
Mindestbestellmenge: 3
IXTA80N10TIxys CorporationTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TLittelfuseTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TLittelfuseTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TIxys CorporationTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
IXTA80N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA80N10TIXYSMOSFET 80 Amps 100V 13.0 Rds
Produkt ist nicht verfügbar
IXTA80N10T-TRLIXYSMOSFET IXTA80N10T TRL
Produkt ist nicht verfügbar
IXTA80N10T-TRLIXYSDescription: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
IXTA80N10T7IXYSDescription: MOSFET N-CH 100V 80A TO263-7
Produkt ist nicht verfügbar
IXTA80N12T2IXYSMOSFET TrenchT2 MOSFETs Power MOSFETs
Produkt ist nicht verfügbar
IXTA80N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Produkt ist nicht verfügbar
IXTA80N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA80N12T2IXYSDescription: MOSFET N-CH 120V 80A TO263
Produkt ist nicht verfügbar
IXTA86N20TIXYSIXTA86N20T SMD N channel transistors
Produkt ist nicht verfügbar
IXTA86N20TIXYSDescription: MOSFET N-CH 200V 86A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 1048 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.8 EUR
10+ 15.09 EUR
100+ 12.36 EUR
500+ 10.53 EUR
1000+ 8.88 EUR
Mindestbestellmenge: 2
IXTA86N20TIXYSMOSFET 86 Amps 200V 29 Rds
Produkt ist nicht verfügbar
IXTA86N20TLittelfuseTrans MOSFET N-CH 200V 86A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA86N20TLittelfuseTrans MOSFET N-CH 200V 86A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA86N20T-TRLIXYSMOSFET IXTA86N20T TRL
Produkt ist nicht verfügbar
IXTA86N20T-TRLIXYSDescription: MOSFET N-CH 200V 86A TO263
Produkt ist nicht verfügbar
IXTA86N20X4LittelfuseDiscrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA86N20X4IXYSDescription: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 4649 Stücke:
Lieferzeit 21-28 Tag (e)
1+27.3 EUR
50+ 22.1 EUR
100+ 20.8 EUR
500+ 18.85 EUR
1000+ 17.29 EUR
IXTA86N20X4LittelfuseDiscrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA86N20X4IXYSMOSFET MSFT 86A 200V X4
auf Bestellung 2413 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.48 EUR
10+ 24.23 EUR
25+ 23.58 EUR
50+ 22.26 EUR
100+ 21.84 EUR
Mindestbestellmenge: 2
IXTA86N20X4-TRLLittelfuseLittelfuse Discrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA86N20X4-TRLLittelfuseIXTA86N20X4-TRL
Produkt ist nicht verfügbar
IXTA88N085TIXYSDescription: MOSFET N-CH 85V 88A TO-263
Produkt ist nicht verfügbar
IXTA88N085TIxys CorporationTrans MOSFET N-CH 85V 88A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA88N085T7IXYSDescription: MOSFET N-CH 85V 88A TO-263-7
Produkt ist nicht verfügbar
IXTA8N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
IXTA8N50P
Produktcode: 99415		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA8N50PIXYSMOSFET 8 Amps 500V 0.8 Ohm Rds
Produkt ist nicht verfügbar
IXTA8N50PIXYSDescription: MOSFET N-CH 500V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXTA8N50PLittelfuseTrans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA8N65X2LittelfuseTrans MOSFET N-CH 650V 8A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
28+ 2.62 EUR
31+ 2.35 EUR
33+ 2.23 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
IXTA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.95 EUR
28+ 2.62 EUR
31+ 2.35 EUR
33+ 2.23 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
IXTA8N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
auf Bestellung 247 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.72 EUR
10+ 7.05 EUR
50+ 6.08 EUR
100+ 5.36 EUR
250+ 4.89 EUR
500+ 4.47 EUR
1000+ 4.19 EUR
Mindestbestellmenge: 7
IXTA8N65X2IXYSDescription: MOSFET N-CH 650V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 2230 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.67 EUR
50+ 6.07 EUR
100+ 5.2 EUR
500+ 4.62 EUR
1000+ 3.96 EUR
2000+ 3.73 EUR
Mindestbestellmenge: 4
IXTA8N65X2TRLLittelfuseIXTA8N65X2TRL
Produkt ist nicht verfügbar
IXTA8N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
IXTA8N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA8N70X2IXYSMOSFET 700V/8A Ultra Junct X2-Class MOSFET
Produkt ist nicht verfügbar
IXTA8N70X2TRLLittelfuseN-Channel Enhancement Mode Power MOSFET
Produkt ist nicht verfügbar
IXTA8PN50PIXYSDescription: MOSFET N-CH 500V 8A D2-PAK
Produkt ist nicht verfügbar
IXTA90N055TIXYSDescription: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N055T2IXYSDescription: MOSFET N-CH 55V 90A TO-263
Produkt ist nicht verfügbar
IXTA90N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Produkt ist nicht verfügbar
IXTA90N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA90N055T2IXYSMOSFET 90 Amps 55V 0.0084 Rds
auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
10+ 5.9 EUR
100+ 4.65 EUR
250+ 4.5 EUR
500+ 4.21 EUR
1000+ 4.13 EUR
Mindestbestellmenge: 8
IXTA90N055T2LittelfuseTrans MOSFET N-CH 55V 90A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA90N075T2IXYSDescription: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4106 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.88 EUR
10+ 6.6 EUR
100+ 5.34 EUR
500+ 4.75 EUR
1000+ 4.07 EUR
2000+ 3.83 EUR
Mindestbestellmenge: 4
IXTA90N075T2IXYSMOSFET 90 Amps 75V 0.01 Rds
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.01 EUR
10+ 7.36 EUR
50+ 5.43 EUR
100+ 5.25 EUR
500+ 4.78 EUR
1000+ 4.19 EUR
Mindestbestellmenge: 7
IXTA90N075T2-TRLIXYSMOSFET IXTA90N075T2 TRL
Produkt ist nicht verfügbar
IXTA90N075T2-TRLIXYSDescription: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N075T2TRLLittelfuseTrans MOSFET N-CH 75V 90A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA90N15TIXYSDescription: MOSFET N-CH 150V 90A TO-263
Produkt ist nicht verfügbar
IXTA90N20X3IXYSDescription: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N20X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXTA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
IXTA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA90N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXTA90N20X3LittelfuseTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) TO-263 Tube
Produkt ist nicht verfügbar
IXTA94N20X4IXYSMOSFET MSFT 94A 200V X4
auf Bestellung 858 Stücke:
Lieferzeit 14-28 Tag (e)
2+29.8 EUR
10+ 26.23 EUR
100+ 22.67 EUR
500+ 21.37 EUR
Mindestbestellmenge: 2
IXTA94N20X4LittelfuseDiscrete MOSFET 94A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA94N20X4IXYSDescription: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 1152 Stücke:
Lieferzeit 21-28 Tag (e)
2+20.8 EUR
50+ 17.43 EUR
Mindestbestellmenge: 2
IXTA96P085TIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA96P085T - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.56 EUR
11+ 6.52 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 10
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
18+9.15 EUR
20+ 7.59 EUR
25+ 7.26 EUR
50+ 6.53 EUR
100+ 5.42 EUR
Mindestbestellmenge: 18
IXTA96P085TIXYSDescription: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 181 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
50+ 12.01 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.24 EUR
25+ 8.53 EUR
50+ 7.9 EUR
100+ 7.34 EUR
250+ 6.83 EUR
Mindestbestellmenge: 17
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
16+9.87 EUR
19+ 8.19 EUR
25+ 7.83 EUR
50+ 7.04 EUR
100+ 5.85 EUR
Mindestbestellmenge: 16
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.01 EUR
25+ 7.66 EUR
50+ 6.89 EUR
100+ 5.72 EUR
500+ 4.26 EUR
Mindestbestellmenge: 17
IXTA96P085TIXYSMOSFET -96 Amps -85V 0.013 Rds
auf Bestellung 9254 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.16 EUR
10+ 14.69 EUR
50+ 12.48 EUR
100+ 10.82 EUR
500+ 10.17 EUR
Mindestbestellmenge: 4
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.65 EUR
19+ 8.01 EUR
25+ 7.66 EUR
50+ 6.89 EUR
100+ 5.72 EUR
500+ 4.26 EUR
Mindestbestellmenge: 17
IXTA96P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.56 EUR
11+ 6.52 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 10
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.76 EUR
23+ 6.62 EUR
30+ 4.85 EUR
Mindestbestellmenge: 21
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.76 EUR
23+ 6.62 EUR
30+ 4.85 EUR
Mindestbestellmenge: 21
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA96P085T-TRL - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 2039 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
23+7.02 EUR
25+ 5.86 EUR
100+ 5.04 EUR
250+ 4.79 EUR
500+ 4.29 EUR
Mindestbestellmenge: 23
IXTA96P085T-TRLIXYSMOSFET IXTA96P085T TRL
auf Bestellung 3483 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.75 EUR
10+ 11.96 EUR
25+ 11.49 EUR
100+ 10.17 EUR
250+ 9.88 EUR
500+ 9.05 EUR
800+ 8.55 EUR
Mindestbestellmenge: 4
IXTA96P085T-TRLIXYSDescription: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 5609 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.03 EUR
10+ 12.89 EUR
100+ 10.74 EUR
Mindestbestellmenge: 2
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA96P085T-TRL - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 298W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe TrenchP
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.013ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 2039 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
23+7.02 EUR
25+ 5.86 EUR
100+ 5.04 EUR
250+ 4.79 EUR
500+ 4.29 EUR
Mindestbestellmenge: 23
IXTA96P085T-TRLIXYSDescription: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 21-28 Tag (e)
800+9.48 EUR
1600+ 8.53 EUR
2400+ 7.99 EUR
Mindestbestellmenge: 800
IXTA98N075TIXYSDescription: MOSFET N-CH 75V 98A TO-263
Produkt ist nicht verfügbar
IXTA98N075T7IXYSDescription: MOSFET N-CH 75V 98A TO-263-7
Produkt ist nicht verfügbar
IXTB1909IXYSDescription: POWER MOSFET 500V 100AMP
auf Bestellung 19470 Stücke:
Lieferzeit 21-28 Tag (e)
1+60.58 EUR
10+ 55.88 EUR
100+ 47.72 EUR
500+ 43.33 EUR
IXTB30N100LIXYSMOSFET 30 Amps 1000V
Produkt ist nicht verfügbar
IXTB30N100LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
IXTB30N100LLittelfuseTrans MOSFET N-CH 1KV 30A 3-Pin PLUS 264
Produkt ist nicht verfügbar
IXTB30N100LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTB30N100LIXYSDescription: MOSFET N-CH 1000V 30A PLUS264
Produkt ist nicht verfügbar
IXTB62N50LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
2+63.86 EUR
Mindestbestellmenge: 2
IXTB62N50LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
2+63.86 EUR
25+ 62.76 EUR
Mindestbestellmenge: 2
IXTB62N50LIXYSDescription: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
1+144.09 EUR
10+ 135.37 EUR
IXTB62N50LIXYSMOSFET 62 Amps 500V 0.1 Rds
auf Bestellung 48 Stücke:
Lieferzeit 14-28 Tag (e)
1+151.71 EUR
10+ 142.48 EUR
25+ 137.88 EUR
IXTC102N20TIXYSDescription: MOSFET N-CH 200V ISOPLUS220
Produkt ist nicht verfügbar
IXTC102N25TIXYSDescription: MOSFET N-CH 250V ISOPLUS220
Produkt ist nicht verfügbar
IXTC1088
auf Bestellung 2928 Stücke:
Lieferzeit 21-28 Tag (e)
IXTC1088/6E/2C
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)
IXTC110N25TIXYSDescription: MOSFET N-CH 250V 50A ISOPLUS220
Produkt ist nicht verfügbar
IXTC130N15TIXYSDescription: MOSFET N-CH 150V ISOPLUS220
Produkt ist nicht verfügbar
IXTC13N50IXYSDescription: MOSFET N-CH 500V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXTC160N085TIXYSDescription: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 85 V
Produkt ist nicht verfügbar
IXTC160N10TIXYSDescription: MOSFET N-CH 100V 83A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
IXTC180N055TIXYSDescription: MOSFET N-CH 55V ISOPLUS220
Produkt ist nicht verfügbar
IXTC180N085TIXYSDescription: MOSFET N-CH 85V 110A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Produkt ist nicht verfügbar