IXTA180N10T7-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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Technische Details IXTA180N10T7-TRL IXYS
Description: MOSFET N-CH 100V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263-7 (IXTA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTA180N10T7-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTA180N10T7-TRL | IXYS |
MOSFETs IXTA180N10T7 TRL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA180N10T7-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO263-7 Gate-source voltage: 30V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 151nC Kind of channel: enhancement Reverse recovery time: 100ns Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA180N10T7-TRL |
|
Hersteller: IXYS
MOSFETs IXTA180N10T7 TRL
MOSFETs IXTA180N10T7 TRL
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXTA180N10T7-TRL |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH