IXTA50N20P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.03 EUR |
| 10+ | 6.74 EUR |
| 100+ | 5.46 EUR |
| 500+ | 4.85 EUR |
| 1000+ | 4.15 EUR |
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Technische Details IXTA50N20P IXYS
Description: MOSFET N-CH 200V 50A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V.
Weitere Produktangebote IXTA50N20P nach Preis ab 5.26 EUR bis 8.08 EUR
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auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA50N20P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA50N20P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |