auf Bestellung 800 Stücke:
Lieferzeit 708-712 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.88 EUR |
| 10+ | 11.04 EUR |
| 25+ | 10.01 EUR |
| 100+ | 9.2 EUR |
| 250+ | 8.66 EUR |
| 500+ | 8.11 EUR |
| 800+ | 7.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA3N120HV-TRL IXYS
Description: MOSFET N-CH 1200V 3A TO263HV, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IXTA3N120HV-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTA3N120HV-TRL | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R |
Produkt ist nicht verfügbar |
|
 |
IXTA3N120HVTRL | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R |
Produkt ist nicht verfügbar |
|
|
|
IXTA3N120HV-TRL | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R |
Produkt ist nicht verfügbar |
|
 |
IXTA3N120HV-TRL | Hersteller : IXYS |
Description: MOSFET N-CH 1200V 3A TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |