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IXTA3N120HV-TRL

IXTA3N120HV-TRL IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT-1591719.pdf Hersteller: IXYS
MOSFET MSFT N-CH STD-HI VOLTAGE
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Lieferzeit 618-622 Tag (e)
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10+ 11.04 EUR
25+ 10.01 EUR
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250+ 8.66 EUR
500+ 8.11 EUR
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Technische Details IXTA3N120HV-TRL IXYS

Description: MOSFET N-CH 1200V 3A TO263HV, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.

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IXTA3N120HV-TRL IXTA3N120HV-TRL Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HVTRL IXTA3N120HVTRL Hersteller : Ixys Corporation ete_mosfets_n-channel_standard_ixta3n120hv_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HV-TRL IXTA3N120HV-TRL Hersteller : Littelfuse ete_mosfets_n-channel_standard_ixta3n120hv_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HV-TRL IXTA3N120HV-TRL Hersteller : IXYS Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar