IXTA3N120HV-TRL IXYS

Description: MOSFET N-CH 1200V 3A TO263HV, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263HV, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.