| Anzahl | Preis |
|---|---|
| 1+ | 13.75 EUR |
| 10+ | 10.23 EUR |
| 100+ | 8.52 EUR |
| 500+ | 7.6 EUR |
| 800+ | 7.48 EUR |
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Technische Details IXTA3N120HV-TRL IXYS
Description: MOSFET N-CH 1200V 3A TO263HV, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263HV, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IXTA3N120HV-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA3N120HV-TRL | Hersteller : IXYS |
 Description: MOSFET N-CH 1200V 3A TO263HVPackaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263HV Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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