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IXTH02N250

IXTH02N250 IXYS


Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXTH02N250_Datasheet.PDF
Hersteller: IXYS
MOSFETs High Voltage Power MOSFET; 2500V, 0.2A
auf Bestellung 465 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.16 EUR
10+17.72 EUR
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Technische Details IXTH02N250 IXYS

Description: MOSFET N-CH 2500V 200MA TO247, Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 2500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Weitere Produktangebote IXTH02N250 nach Preis ab 16.13 EUR bis 26.56 EUR

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IXTH02N250 IXTH02N250 Hersteller : Littelfuse Inc. IXTx02N250%28S%29.pdf Description: MOSFET N-CH 2500V 200MA TO247
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 2500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.56 EUR
30+18.16 EUR
120+16.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH