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Technische Details IXTH200N10T IXYS
Description: MOSFET N-CH 100V 200A TO247, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 550W (Tc).
Weitere Produktangebote IXTH200N10T nach Preis ab 8.16 EUR bis 18.27 EUR
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IXTH200N10T | Hersteller : IXYS |
 Description: MOSFET N-CH 100V 200A TO247Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 550W (Tc) |
auf Bestellung 4289 Stücke: Lieferzeit 10-14 Tag (e) |
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