auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.94 EUR |
| 10+ | 7.52 EUR |
| 50+ | 7.08 EUR |
| 100+ | 5.95 EUR |
| 250+ | 4.84 EUR |
| 500+ | 4.66 EUR |
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Technische Details IXTA50N25T IXYS
Description: MOSFET N-CH 250V 50A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.
Weitere Produktangebote IXTA50N25T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTA50N25T | Hersteller : Littelfuse |
 Trans MOSFET N-CH 250V 50A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA50N25T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA50N25T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 250V 50A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA50N25T | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO263 On-state resistance: 60mΩ Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |