IXTH12N70X2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 700V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
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Technische Details IXTH12N70X2 IXYS
Description: MOSFET N-CH 700V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V.
Weitere Produktangebote IXTH12N70X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTH12N70X2 | Hersteller : IXYS |
MOSFETs TO247 700V 12A N-CH X2CLASS |
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IXTH12N70X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 12A; 180W; TO247-3; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 270ns Gate charge: 19nC Power dissipation: 180W Features of semiconductor devices: ultra junction x-class |
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