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| Anzahl | Preis |
|---|---|
| 9+ | 8.11 EUR |
| 13+ | 5.58 EUR |
| 14+ | 5.28 EUR |
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Technische Details IXTH12N70X2 IXYS
Description: MOSFET N-CH 700V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V.
Weitere Produktangebote IXTH12N70X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTH12N70X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 700V 12A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTH12N70X2 | Hersteller : IXYS |
MOSFETs TO247 700V 12A N-CH X2CLASS |
Produkt ist nicht verfügbar |