IXTA06N120P-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 800+ | 4.53 EUR |
| 2400+ | 4.3 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
800 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA06N120P-TRL IXYS
Description: MOSFET N-CH 1200V 600MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V.
Weitere Produktangebote IXTA06N120P-TRL nach Preis ab 5.26 EUR bis 12.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IXTA06N120P-TRL | IXYS |
MOSFETs IXTA06N120P TRL |
auf Bestellung 800 Stücke: Lieferzeit 255-259 Tag (e) |
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IXTA06N120P-TRL | IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V |
auf Bestellung 4639 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTA06N120P-TRL |
|
Hersteller: IXYS
MOSFETs IXTA06N120P TRL
MOSFETs IXTA06N120P TRL
auf Bestellung 800 Stücke:
Lieferzeit 255-259 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.71 EUR |
| 10+ | 7.31 EUR |
| 25+ | 6.89 EUR |
| 100+ | 5.93 EUR |
| 250+ | 5.59 EUR |
| 500+ | 5.26 EUR |
| IXTA06N120P-TRL |
|
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 4639 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.42 EUR |
| 10+ | 8.33 EUR |
| 50+ | 6.58 EUR |
| 100+ | 5.68 EUR |