IXTA06N120P-TRL IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details IXTA06N120P-TRL IXYS
Description: MOSFET N-CH 1200V 600MA TO263, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXTA06N120P-TRL nach Preis ab 3.97 EUR bis 8.24 EUR
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IXTA06N120P-TRL | IXYS |
MOSFETs IXTA06N120P TRL |
auf Bestellung 800 Stücke: Lieferzeit 255-259 Tag (e) |
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IXTA06N120P-TRL | IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V |
auf Bestellung 6703 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA06N120P-TRL |
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Hersteller: IXYS
MOSFETs IXTA06N120P TRL
MOSFETs IXTA06N120P TRL
auf Bestellung 800 Stücke:
Lieferzeit 255-259 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.32 EUR |
| 10+ | 6.14 EUR |
| 25+ | 5.79 EUR |
| 100+ | 4.98 EUR |
| 250+ | 4.7 EUR |
| 500+ | 4.42 EUR |
| IXTA06N120P-TRL |
|
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Description: MOSFET N-CH 1200V 600MA TO263
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 6703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.24 EUR |
| 10+ | 5.55 EUR |
| 100+ | 3.97 EUR |