Produkte > LITTELFUSE INC. > IXTA06N120P-TRL
IXTA06N120P-TRL

IXTA06N120P-TRL Littelfuse Inc.


littelfuse_discrete_mosfets_n-channel_standard_ixt_06n120p_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTA06N120P-TRL Littelfuse Inc.

Description: MOSFET N-CH 1200V 600MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V.

Weitere Produktangebote IXTA06N120P-TRL

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_06n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : Littelfuse ete_mosfets_n-channel_standard_ixt_06n120p_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P TRL IXTA06N120P TRL Hersteller : Ixys Corporation ete_mosfets_n-channel_standard_ixt_06n120p_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : Littelfuse ete_mosfets_n-channel_standard_ixt_06n120p_datasheet.pdf.pdf Trans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT-1622555.pdf MOSFET IXTA06N120P TRL
Produkt ist nicht verfügbar