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IXTA06N120P-TRL

IXTA06N120P-TRL IXYS


littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.16 EUR
1600+3.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTA06N120P-TRL IXYS

Description: MOSFET N-CH 1200V 600MA TO263, Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 50µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 600mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote IXTA06N120P-TRL nach Preis ab 3.97 EUR bis 8.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT-1622555.pdf MOSFETs IXTA06N120P TRL
auf Bestellung 800 Stücke:
Lieferzeit 255-259 Tag (e)
Anzahl Preis
1+7.32 EUR
10+6.14 EUR
25+5.79 EUR
100+4.98 EUR
250+4.7 EUR
500+4.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA06N120P-TRL IXTA06N120P-TRL Hersteller : IXYS littelfuse-discrete-mosfets-ixt-06n120p-datasheet?assetguid=d5e25852-d52b-43b3-b905-125ecb4aedb7 Description: MOSFET N-CH 1200V 600MA TO263
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 6703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+5.55 EUR
100+3.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH