Technische Details IXTA08N100P Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns, Mounting: SMD, Type of transistor: N-MOSFET, Features of semiconductor devices: standard power mosfet, Kind of package: tube, Polarisation: unipolar, Reverse recovery time: 750ns, On-state resistance: 20Ω, Drain current: 0.8A, Power dissipation: 42W, Drain-source voltage: 1kV, Kind of channel: enhancement, Case: TO263, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTA08N100P
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IXTA08N100P | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Reverse recovery time: 750ns On-state resistance: 20Ω Drain current: 0.8A Power dissipation: 42W Drain-source voltage: 1kV Kind of channel: enhancement Case: TO263 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA08N100P | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 0.8A TO-263 |
Produkt ist nicht verfügbar |
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IXTA08N100P | Hersteller : IXYS |
MOSFETs 0.8 Amps 1000V 20 Rds |
Produkt ist nicht verfügbar |
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IXTA08N100P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns Mounting: SMD Type of transistor: N-MOSFET Features of semiconductor devices: standard power mosfet Kind of package: tube Polarisation: unipolar Reverse recovery time: 750ns On-state resistance: 20Ω Drain current: 0.8A Power dissipation: 42W Drain-source voltage: 1kV Kind of channel: enhancement Case: TO263 |
Produkt ist nicht verfügbar |