
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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14+ | 10.36 EUR |
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Technische Details IXTH11P50 Littelfuse
Description: MOSFET P-CH 500V 11A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Weitere Produktangebote IXTH11P50 nach Preis ab 10.05 EUR bis 20.46 EUR
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IXTH11P50 | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTH11P50 | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -11A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | Hersteller : Ixys Corporation |
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auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | Hersteller : IXYS |
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auf Bestellung 273 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH11P50 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH11P50 | Hersteller : Littelfuse |
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auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTH11P50 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |