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Technische Details IXTH11P50 Littelfuse
Description: MOSFET P-CH 500V 11A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXTH11P50 nach Preis ab 11.96 EUR bis 28.63 EUR
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IXTH11P50 | Littelfuse |
 Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247 |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 300W Gate charge: 145nC Polarisation: unipolar Drain current: -11A Kind of channel: enhancement Drain-source voltage: -500V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.75Ω Reverse recovery time: 0.5µs |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | Ixys Corporation |
Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247 |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH11P50 | Littelfuse Inc. |
Description: MOSFET P-CH 500V 11A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH11P50 | IXYS |
MOSFETs -11 Amps -500V 0.75 Rds |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTH11P50 |
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Hersteller: Littelfuse
Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247
Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 12.99 EUR |
| IXTH11P50 |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 145nC
Polarisation: unipolar
Drain current: -11A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Reverse recovery time: 0.5µs
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 300W
Gate charge: 145nC
Polarisation: unipolar
Drain current: -11A
Kind of channel: enhancement
Drain-source voltage: -500V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Reverse recovery time: 0.5µs
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.43 EUR |
| 7+ | 13.49 EUR |
| 10+ | 12.1 EUR |
| 30+ | 11.96 EUR |
| IXTH11P50 |
|
Hersteller: Ixys Corporation
Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247
Trans MOSFET P-CH Si 500V 11A 3-Pin(3+Tab) TO-247
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 23.92 EUR |
| 10+ | 19.86 EUR |
| IXTH11P50 |
|
Hersteller: Littelfuse Inc.
Description: MOSFET P-CH 500V 11A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET P-CH 500V 11A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.03 EUR |
| 30+ | 15.45 EUR |
| IXTH11P50 |
|
Hersteller: IXYS
MOSFETs -11 Amps -500V 0.75 Rds
MOSFETs -11 Amps -500V 0.75 Rds
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.63 EUR |
| 10+ | 20.19 EUR |
| 120+ | 17.34 EUR |
| 510+ | 15.98 EUR |